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1. 发明授权

US07830720B2 Methods of programming non-volatile semiconductor memory devices using different program verification operations and related devices 有权
标题翻译：使用不同程序验证操作和相关设备编程非易失性半导体存储器件的方法
公开(公告)号：US07830720B2
公开(公告)日：2010-11-09
申请号：US12119829
申请日：2008-05-13
申请人： Sung-Soo Lee , Jin-Sung Park
发明人： Sung-Soo Lee , Jin-Sung Park
IPC分类号： G11C11/34
CPC分类号： G11C16/3436
摘要： A method of programming a non-volatile memory device includes receiving data to be programmed into memory cells of the memory device, programming the memory cells with the data, and selectively performing one of a plurality of program verify operations based on a current program loop number to determine whether the memory cells have been successfully programmed. For example, one of a wired-OR pass/fail check operation and a Y-scan pass/fail check operation may be performed according to the current program loop number. Related methods and devices are also discussed.
摘要翻译：一种编程非易失性存储器件的方法包括接收要编程到存储器件的存储器单元中的数据，使用数据对存储器单元进行编程，以及基于当前程序循环数选择性地执行多个程序校验操作之一以确定存储器单元是否已被成功编程。例如，可以根据当前程序循环编号进行有线或通过/失败检查操作和Y扫描通过/失败检查操作之一。还讨论了相关的方法和设备。

2. 发明申请

US20080291739A1 METHODS OF PROGRAMMING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICES USING DIFFERENT PROGRAM VERIFICATION OPERATIONS AND RELATED DEVICES 有权
标题翻译：使用不同的程序验证操作和相关设备编程非易失性半导体存储器件的方法
公开(公告)号：US20080291739A1
公开(公告)日：2008-11-27
申请号：US12119829
申请日：2008-05-13
申请人： Sung-Soo Lee , Jin-Sung Park
发明人： Sung-Soo Lee , Jin-Sung Park
IPC分类号： G11C16/06
CPC分类号： G11C16/3436
摘要： A method of programming a non-volatile memory device includes receiving data to be programmed into memory cells of the memory device, programming the memory cells with the data, and selectively performing one of a plurality of program verify operations based on a current program loop number to determine whether the memory cells have been successfully programmed. For example, one of a wired-OR pass/fail check operation and a Y-scan pass/fail check operation may be performed according to the current program loop number. Related methods and devices are also discussed.
摘要翻译：一种编程非易失性存储器件的方法包括接收要编程到存储器件的存储器单元中的数据，使用数据对存储器单元进行编程，以及基于当前程序循环数选择性地执行多个程序校验操作之一以确定存储器单元是否已被成功编程。例如，可以根据当前程序循环编号进行有线或通过/失败检查操作和Y扫描通过/失败检查操作之一。还讨论了相关的方法和设备。

3. 发明授权

US08516846B2 Ice maker and refrigerator having the same 失效
标题翻译：制冰机和冰箱有相同的
公开(公告)号：US08516846B2
公开(公告)日：2013-08-27
申请号：US12062827
申请日：2008-04-04
申请人： Tae-Hee Lee , Hong-Hee Park , Joon-Hwan Oh , Young-Jin Kim , Kwang-Ha Suh , Jin-Sung Park
发明人： Tae-Hee Lee , Hong-Hee Park , Joon-Hwan Oh , Young-Jin Kim , Kwang-Ha Suh , Jin-Sung Park
IPC分类号： F25C5/08 , F25C1/00 , F25C1/04
CPC分类号： F25C1/18 , F25C1/08 , F25C5/08 , F25C2400/10
摘要： An ice maker and a refrigerator having the same include an ice making container which is maintained at a temperature higher than a freezing point of water. Ace core rods having the temperature lower than the freezing point are inserted into the ice making container to cause water in the container to freeze. Accordingly, water at the periphery of the ice making container remains liquid which the water surrounding the ice core rods freezes. As a result, air bubbles generated when the ice is made can be discharged from the liquid portions of the water at the outer edges of the container. This results in ice without trapped air bubbles, which allows excellent transparent ice pieces to be formed. In some embodiments, the exterior surfaces of the ice making container are maintained at a temperature lower than the freezing point of water, and thawing rods maintained at the temperature higher than the freezing point of water are inserted into the center portions of the ice making container. In this embodiment, water at the edges of the ice making container are frozen first, while the water surrounding the thawing rods remains liquid. This also allows air bubbles to escape during formation of the ice, which results in transparent ice pieces.
摘要翻译：制冰机和具有该制冰机的冰箱包括保持在比水的冰点高的温度的制冰容器。将具有低于凝固点温度的Ace芯棒插入制冰容器中，使容器内的水冻结。因此，制冰容器周围的水保持液体，冰芯棒周围的水冻结。结果，当制冰时产生的气泡可以从容器的外边缘处的水的液体部分排出。这导致没有被捕获的气泡的冰，这允许形成优异的透明冰块。在一些实施例中，制冰容器的外表面保持在低于水的凝固点的温度，并且保持在高于水的凝固点的温度的解冻杆被插入制冰容器的中心部分。在该实施例中，首先冻结制冰容器边缘处的水，同时围绕解冻杆的水保持液体。这也允许在形成冰期间气泡逸出，这导致透明的冰块。

4. 发明授权

US08164954B2 Flash memory device and program method thereof 有权
标题翻译：闪存装置及其编程方法
公开(公告)号：US08164954B2
公开(公告)日：2012-04-24
申请号：US13224101
申请日：2011-09-01
申请人： Jin-Sung Park
发明人： Jin-Sung Park
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C16/3427 , G11C16/3454 , G11C2211/5621
摘要： A nonvolatile memory device that includes first and second storage areas, and a control logic configured to control the first and second storage areas, wherein when a program operation of the first storage area is passed before a program operation of the second storage area is passed, the control logic completes the program operation of the first storage area and continues the program operation of the second storage area is provided.
摘要翻译：一种包括第一和第二存储区域的非易失性存储器件，以及被配置为控制第一和第二存储区域的控制逻辑，其中当在第二存储区域的程序操作通过之前第一存储区域的程序操作被通过时，控制逻辑完成第一存储区域的编程操作并且继续提供第二存储区域的编程操作。

5. 发明申请

US20100026169A1 Thin film transistor, method of manufacturing the same and flat panel display device having the same 失效
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示装置
公开(公告)号：US20100026169A1
公开(公告)日：2010-02-04
申请号：US12382743
申请日：2009-03-23
申请人： Jong-Han Jeong , Tae-Kyung Ahn , Jae-Kyeong Jeong , Jin-Sung Park , Hun-Jung Lee , Hyun-Soo Shin , Yeon-Gon Mo
发明人： Jong-Han Jeong , Tae-Kyung Ahn , Jae-Kyeong Jeong , Jin-Sung Park , Hun-Jung Lee , Hyun-Soo Shin , Yeon-Gon Mo
IPC分类号： H01J1/62 , H01L29/10 , H01L21/16 , H01L29/08
CPC分类号： H01L29/78696 , H01L27/1225 , H01L29/7869
摘要： Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.
摘要翻译：公开了具有氧化物半导体作为活化层的薄膜晶体管，其制造方法和具有该活性层的平板显示装置。薄膜晶体管包括形成在基板上的氧化物半导体层，其包括沟道区域，源极区域和漏极区域，通过栅极绝缘膜与氧化物半导体层绝缘的栅极电极以及源极电极和漏极电极耦合到源区和漏区。氧化物半导体层包括第一层部分和第二层部分。第一层部分具有第一厚度和第一载流子浓度，并且第二层部分具有第二厚度和第二载流子浓度。第二载流子浓度低于第一载流子浓度。

6. 发明授权

US07286411B2 Row decoder circuit for use in non-volatile memory device 有权
标题翻译：行解码器电路用于非易失性存储器件
公开(公告)号：US07286411B2
公开(公告)日：2007-10-23
申请号：US11167984
申请日：2005-06-27
申请人： Jin-Sung Park , Myong-Jae Kim , Seung-Keun Lee
发明人： Jin-Sung Park , Myong-Jae Kim , Seung-Keun Lee
IPC分类号： G11C16/06 , G11C8/00 , G11C5/06
CPC分类号： G11C8/08 , G11C16/08
摘要： The invention disclosed herein is a non-volatile memory device. The non-volatile memory device comprises: a first transistor connected between a first voltage and a control node, and controlled by a second voltage; a second transistor connected between the first voltage and the control node, and controlled by a third voltage, and a word line driver for driving a word line in responsive to a voltage of the control node. The second voltage is set to a ground voltage during an erase operation. The third voltage is set to a power voltage during the erase operation.
摘要翻译：本文公开的发明是非易失性存储器件。非易失性存储器件包括：连接在第一电压和控制节点之间并由第二电压控制的第一晶体管; 连接在第一电压和控制节点之间并由第三电压控制的第二晶体管，以及用于响应于控制节点的电压驱动字线的字线驱动器。在擦除操作期间将第二电压设置为接地电压。在擦除操作期间将第三电压设置为电源电压。

7. 发明申请

US20060133145A1 Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats 有权
公开(公告)号：US20060133145A1
公开(公告)日：2006-06-22
申请号：US11283646
申请日：2005-11-21
申请人： Jin-Sung Park , Dae-Seok Byeon
发明人： Jin-Sung Park , Dae-Seok Byeon
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C2216/14
摘要： A flash memory device is programmed by loading first data into a page buffer of a first mat. Second data is loaded into a page buffer of a second mat while programming the first data in a first memory block of the first mat.

8. 发明申请

US20060082411A1 Voltage regulator for semiconductor memory device 有权
标题翻译：半导体存储器件的稳压器
公开(公告)号：US20060082411A1
公开(公告)日：2006-04-20
申请号：US11167983
申请日：2005-06-27
申请人： Jin-Sung Park , Dae-Seok Byeon
发明人： Jin-Sung Park , Dae-Seok Byeon
IPC分类号： G05F1/10
CPC分类号： G05F1/575
摘要： Disclosed is a voltage regulator capable of reducing a set-up time. A driver is connected between a power supply terminal and the output terminal, and supplies a power supply voltage to the output terminal in response to a signal of a control node. A first signal generator provides a first signal to the control node when a voltage of the output terminal is lower than the target voltage. A second signal generator provides a second signal to the control node for a predetermined period of time when the voltage of the output terminal becomes higher than a detection voltage while the first signal generator is providing the first signal to the control node.
摘要翻译：公开了一种能够减少设置时间的电压调节器。驱动器连接在电源端子和输出端子之间，并且响应于控制节点的信号将电源电压提供给输出端子。当输出端子的电压低于目标电压时，第一信号发生器向控制节点提供第一信号。当第一信号发生器向控制节点提供第一信号时，第二信号发生器在输出端的电压变得高于检测电压的预定时间段内向控制节点提供第二信号。

9. 发明申请

US20060078452A1 Oil discharge reducing device for scroll compressor 审中-公开
标题翻译：用于涡旋压缩机的排油减压装置
公开(公告)号：US20060078452A1
公开(公告)日：2006-04-13
申请号：US11034821
申请日：2005-01-14
申请人： Jin-Sung Park , Dong-Koo Shin , Cheol-Hwan Kim , Hyo-Keun Park , Yang-Hee Cho , In-Hwe Koo , Nam-Kyu Cho
发明人： Jin-Sung Park , Dong-Koo Shin , Cheol-Hwan Kim , Hyo-Keun Park , Yang-Hee Cho , In-Hwe Koo , Nam-Kyu Cho
IPC分类号： F04C2/00 , F01C1/02 , F04C18/00
CPC分类号： F04C23/008 , F04C29/026
摘要： An oil discharge reducing device for a scroll compressor comprises: a refrigerant guiding mechanism for guiding a refrigerant gas of high pressure discharged through a discharge opening of the fixed scroll to a rotor of the driving motor; and an oil separating mechanism penetrated through the rotor and for separating oil contained in the refrigerant gas by a centrifugal force caused by the rotation of the rotor while the refrigerant gas guided by the refrigerant guiding mechanism cools the driving motor as it flows though the driving motor. According to this, an amount of oil leaked to outside of the compressor is minimized, and the driving motor constituting the compressor can be effectively cooled.
摘要翻译：一种用于涡旋压缩机的排油装置，包括：制冷剂引导机构，用于将通过固定涡旋盘的排放口排出的高压制冷剂气体引导到驱动电动机的转子; 以及分离机构，其穿过转子并且通过由转子旋转引起的离心力分离制冷剂气体中所含的油，同时由制冷剂引导机构引导的制冷剂气体在驱动电动机通过驱动电动机时冷却驱动电机。因此，泄漏到压缩机外部的油量被最小化，能够有效地冷却构成压缩机的驱动马达。

10. 发明申请

US20060062682A1 Scroll compressor having refrigerant gas guide structure 审中-公开
标题翻译：具有制冷剂气体引导结构的涡旋压缩机
公开(公告)号：US20060062682A1
公开(公告)日：2006-03-23
申请号：US11211431
申请日：2005-08-26
申请人： Nam-Kyu Cho , Dong-Koo Shin , In-Hwe Koo , Jin-Sung Park
发明人： Nam-Kyu Cho , Dong-Koo Shin , In-Hwe Koo , Jin-Sung Park
IPC分类号： F01C1/02 , F04C2/00 , F03C4/00 , F01C1/063 , F04C18/00
CPC分类号： F01C21/10 , F04C18/0215 , F04C23/008 , F04C29/026 , F04C2240/30
摘要： A scroll compressor having a refrigerant gas guide structure includes: a casing forming a hermetic receiving space therein, and having a suction pipe for sucking a refrigerant gas and a discharge pipe for discharging a refrigerant gas; a fixed scroll having a wrap of an involute shape and a discharge hole for discharging a compressed refrigerant gas, and disposed in the casing; an orbiting scroll having a wrap of an involute shape, coupled with the fixed scroll and orbiting relative to the fixed scroll; and a gas guide member installed in the casing, for guiding the refrigerant gas discharged through the discharge hole.
摘要翻译：具有制冷剂气体引导结构的涡旋压缩机包括：壳体，其形成有密封容纳空间，并具有用于吸入制冷剂气体的吸入管和用于排出制冷剂气体的排出管; 固定涡旋盘，其具有渐开线形状的卷边和用于排出压缩的制冷剂气体的排出孔，并且设置在壳体中; 一种具有渐开线形状的包裹物的绕动涡旋盘，其与固定涡旋盘相耦合并相对于固定涡旋件运动; 以及气体引导构件，其安装在壳体中，用于引导通过排出孔排出的制冷剂气体。

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