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    • 6. 发明申请
    • Stack gate structure of flash memory device and fabrication method for the same
    • 闪存器件的堆栈栅结构及其制作方法
    • US20060281257A1
    • 2006-12-14
    • US11320613
    • 2005-12-30
    • Jae Moon
    • Jae Moon
    • H01L21/336
    • H01L29/7881H01L29/40114H01L29/66825
    • A nonvolatile memory device has a floating gate with its top and side surfaces covered by ONO film to improve the data retention of the floating gate. The ONO film has upper and lower silicon dioxide layers interposed by silicon nitride layer thinner than the oxide layers. A method includes the steps of forming a tunnel oxide layer on a silicon substrate, depositing a first polysilicon film on the tunnel oxide layer, patterning the first polysilicon film to form a floating gate, depositing oxide-nitride-oxide (ONO) film on the substrate surface to cover top and side surfaces of the floating gate, depositing a second polysilicon film on the ONO film, patterning the second polysilicon film to form a control gate, and selectively etching the ONO film to form an interlayer dielectric layer interposing between the floating and control gates and a sidewall spacer dielectric layer on sidewalls of the floating gate.
    • 非易失性存储器件具有浮动栅极,其顶表面和侧表面被ONO膜覆盖以改善浮栅的数据保持。 ONO膜具有比氧化物层薄的氮化硅层插入的上下二氧化硅层。 一种方法包括以下步骤:在硅衬底上形成隧道氧化物层,在隧道氧化物层上沉积第一多晶硅膜,图案化第一多晶硅膜以形成浮置栅极,在氧化物 - 氧化物(ONO)膜上沉积氧化物 - 氧化物 衬底表面以覆盖浮栅的顶表面和侧表面,在ONO膜上沉积第二多晶硅膜,图案化第二多晶硅膜以形成控制栅极,并且选择性地蚀刻ONO膜以形成插入在浮置栅极之间的层间电介质层 以及在浮动栅极的侧壁上的控制栅极和侧壁间隔物介电层。