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1. 发明授权

US5817954A Automated analyzing apparatus for measuring water quality with a cylinder-shaped syringe unit 失效
标题翻译：用圆筒形注射器单元测量水质的自动分析仪器
公开(公告)号：US5817954A
公开(公告)日：1998-10-06
申请号：US750701
申请日：1996-12-16
申请人： Sung Hyun Kahng , Sung Rok Cho , Soo Hyung Lee , Eun Soo Kim , Kun Young Lee , Jae Ryoung Oh
发明人： Sung Hyun Kahng , Sung Rok Cho , Soo Hyung Lee , Eun Soo Kim , Kun Young Lee , Jae Ryoung Oh
IPC分类号： G01N1/00 , G01N33/18 , G01N35/00 , G01N35/10
CPC分类号： G01N35/00 , G01N33/1886 , G01N2035/1062
摘要： The present invention provides an automated analyzing apparatus which comprises: a syringe unit for inhaling or transfering liquid such as sample, reagents and washing solution by moving the piston (12) by a certain distance; a built-in stirring bar (31) located within the syringe barrel (11); a driving unit for rotating the stirring bar (31); a driving means (13) for moving the piston (12) up and down; several connection paths (15a-15f) located in the lower part of the syringe barrel (11) or in the piston (12) where the sample, the reagents, the washing solution, and air can be provided or discharged; 2-way on/off valves (16a-16f) connected to each connection path (15a-15f); detecting means (3) positioned in the outer wall of the syringe barrel (11) perpendicular to the piston shaft (14); additional heating and cooling unit (4) for temperature control or sample digestion; control unit (6) for controlling the driving means (13), the detector (2) and valves (16a-16f) described above.
摘要翻译： PCT No.PCT / KR96 / 00172 Sec。 371日期1996年12月16日第 102（e）日期1996年12月16日PCT提交1996年10月8日PCT公布。公开号WO97 / 14039 日期1997年04月17日本发明提供了一种自动分析装置，其包括：通过将活塞（12）移动一定距离来吸入或转移样品，试剂和洗涤液等液体的注射器单元; 位于注射器筒（11）内的内置搅拌棒（31）; 用于旋转搅拌棒（31）的驱动单元; 用于上下移动活塞（12）的驱动装置（13）; 几个连接路径（15a-15f）位于注射器筒体（11）的下部或活塞（12）中，其中可以提供或排出样品，试剂，洗涤溶液和空气; 连接到每个连接路径（15a-15f）的2通开/关阀（16a-16f）; 检测装置（3），其定位在与所述活塞轴（14）垂直的所述注射器筒（11）的外壁中; 附加的加热和冷却单元（4）用于温度控制或样品消化; 控制单元（6），用于控制上述驱动装置（13），检测器（2）和阀（16a-16f）。

2. 发明授权

US08292020B2 Automatic moving apparatus for pre-crash headrest 有权
标题翻译：自动移动装置，用于预碰撞头枕
公开(公告)号：US08292020B2
公开(公告)日：2012-10-23
申请号：US12956747
申请日：2010-11-30
申请人： Su Hwan Hwang , Bong Joon Lee , Eun Soo Kim , Gil Ju Kim , Jun Yeol Heo , Jong Kweon Pyun , In Ho Lee , Seung Jai Kim , Do Hyoung Kim , Sang Nam Park , Dong Gi Kim , Jin Young Nam
发明人： Su Hwan Hwang , Bong Joon Lee , Eun Soo Kim , Gil Ju Kim , Jun Yeol Heo , Jong Kweon Pyun , In Ho Lee , Seung Jai Kim , Do Hyoung Kim , Sang Nam Park , Dong Gi Kim , Jin Young Nam
IPC分类号： B60K28/14
CPC分类号： B60N2/002 , B60N2/829 , B60N2/888
摘要： An automatic moving apparatus may include a collision prediction sensor, a control unit comparing a value measured by the collision prediction sensor, with a reference value stored in the control unit, and outputting a control signal when it may be determined that the value measured by the collision prediction sensor is higher than the reference value, and a headrest moving unit moving a headrest unit toward a passenger's head before the headrest unit comes into contact with the passenger's head, and including a stay rod connected to the headrest unit, both sides of the stay rod being placed in a vertical direction, tilting device tilting the stay rod forwards or backwards relative to a seatback in response to the control signal of the control unit, and vertical moving device moving the stay rod in a vertical direction in response to the control signal of the control unit.
摘要翻译：自动移动装置可以包括碰撞预测传感器，控制单元，将由碰撞预测传感器测量的值与存储在控制单元中的参考值进行比较，并且当可以确定由碰撞预测传感器高于参考值，头枕移动单元在头枕单元与乘客头部接触之前将头枕单元移动到乘客头部，并且包括连接到头枕单元的撑杆，延伸杆被放置在垂直方向上，倾斜装置响应于控制单元的控制信号相对于座椅靠背向前或向后倾斜拉杆，并且垂直移动装置响应于控制而沿垂直方向移动拉杆控制单元的信号。

3. 发明授权

US07682900B2 Method of fabricating flash memory device 失效
标题翻译：制造闪存设备的方法
公开(公告)号：US07682900B2
公开(公告)日：2010-03-23
申请号：US11964298
申请日：2007-12-26
申请人： Eun Soo Kim , Whee Won Cho , Seung Hee Hong
发明人： Eun Soo Kim , Whee Won Cho , Seung Hee Hong
IPC分类号： H01L21/336
CPC分类号： H01L27/11524 , H01L27/11521
摘要： The invention relates to a method of fabricating a flash memory device. According to the method, select transistors and memory cells are formed on, and junctions are formed in a semiconductor substrate. The semiconductor substrate between a select transistor and an adjacent memory cell are over etched using a hard mask pattern. Accordingly, migration of electrons can be prohibited and program disturbance characteristics can be improved. Further, a void is formed between the memory cells. Accordingly, an interference phenomenon between the memory cells can be reduced and, therefore, the reliability of a flash memory device can be improved.
摘要翻译：本发明涉及一种制造闪速存储器件的方法。根据该方法，在半导体衬底中形成选择晶体管和存储单元，并且形成结。选择晶体管和相邻存储单元之间的半导体衬底使用硬掩模图案过蚀刻。因此，可以禁止电子的迁移，并且可以提高程序干扰特性。此外，在存储单元之间形成空隙。因此，可以减少存储单元之间的干扰现象，因此可以提高闪存器件的可靠性。

4. 发明授权

US07019242B2 Electroluminescent metal dome keypad 失效
标题翻译：电致发光金属圆顶键盘
公开(公告)号：US07019242B2
公开(公告)日：2006-03-28
申请号：US10962780
申请日：2004-10-12
申请人： Eun Soo Kim
发明人： Eun Soo Kim
IPC分类号： H01H13/02
CPC分类号： H01H13/7006 , H01H2205/026 , H01H2205/03 , H01H2219/018 , H01H2219/04 , H01H2229/028 , H01H2229/03 , H01H2239/004 , H01H2239/008
摘要： The present invention relates to an EL metal dome keypad which comprises a plurality of domes which are disposed at positions corresponding to fixed contact terminals of a printed circuit board and are brought into contact with or separated from the fixed contact terminals by means of elastic deformation; a base tape which is laminated on the printed circuit board, has a plurality of holes formed at positions corresponding to the domes, and is used to mount the domes to the printed circuit board by inserting and holding the domes into the formed holes; double-sided adhesive tape which is laminated in the base tape and the domes inserted into and held to the holes formed in the base tape, and used to attach and hold the base tape and the dome thereon; and an EL sheet which is attached and laminated on the double-sided adhesive tape.
摘要翻译：本发明涉及一种EL金属穹顶键盘，其包括多个穹顶，其设置在与印刷电路板的固定接触端子对应的位置处，并且通过弹性变形与固定接触端子接触或分离; 层叠在印刷电路板上的基带具有形成在与圆顶对应的位置处的多个孔，并且用于通过将圆顶插入并保持在形成的孔中而将圆顶安装到印刷电路板; 叠层在基带中的双面胶带和插入并保持在形成在基带中的孔的圆顶，并用于将基带和穹顶固定并保持在其上; 以及附着并层叠在双面胶带上的EL片。

5. 发明授权

US07611964B2 Method of forming isolation layer of semiconductor memory device 失效
标题翻译：形成半导体存储器件隔离层的方法
公开(公告)号：US07611964B2
公开(公告)日：2009-11-03
申请号：US12163584
申请日：2008-06-27
申请人： Jong Hye Cho , Whee Won Cho , Eun Soo Kim
发明人： Jong Hye Cho , Whee Won Cho , Eun Soo Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/76232 , H01L27/11521
摘要： The present invention relates to a method of forming an isolation layer of a semiconductor memory device. According to a method of fabricating a semiconductor memory device in accordance with an aspect of the present invention, a tunnel insulating layer and a charge trap layer are formed over a semiconductor substrate. An isolation trench is formed by etching the charge trap layer and the tunnel insulating layer. A passivation layer is formed on the entire surface including the isolation trench. A first insulating layer is formed at a bottom of the isolation trench. Portions of the passivation layer, which are oxidized in the formation process of the first insulating layer, are removed. A second insulating layer is formed on the entire surface including the first insulating layer.
摘要翻译：本发明涉及形成半导体存储器件的隔离层的方法。根据本发明的半导体存储器件的制造方法，在半导体衬底上形成隧道绝缘层和电荷俘获层。通过蚀刻电荷陷阱层和隧道绝缘层形成隔离沟槽。在包括隔离沟槽的整个表面上形成钝化层。第一绝缘层形成在隔离沟槽的底部。去除在第一绝缘层的形成过程中被氧化的钝化层的部分。在包括第一绝缘层的整个表面上形成第二绝缘层。

6. 发明申请

US20090098732A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING CONTACT PLUG OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的形成接触片的半导体器件和方法
公开(公告)号：US20090098732A1
公开(公告)日：2009-04-16
申请号：US11965368
申请日：2007-12-27
申请人： Whee Won CHO , Jung Geun Kim , Eun Soo Kim
发明人： Whee Won CHO , Jung Geun Kim , Eun Soo Kim
IPC分类号： H01L21/768
CPC分类号： H01L21/76804 , H01L21/76831
摘要： The present invention relates to a semiconductor device and a method of forming a contact plug of a semiconductor device. According to the method, a first dielectric layer is formed on a semiconductor substrate in which junction regions are formed. A hard mask is formed on the first dielectric layer. The hard mask and the first dielectric layer corresponding to the junction regions are etched to form trenches. Spacers are formed on sidewalls of the trenches. Contact holes are formed in the first dielectric layer using an etch process employing the spacers and the hard mask so that the junction regions are exposed. The contact holes are gap filled with a conductive material, thus forming contact plugs. Accordingly, bit lines can be easily formed on the contact plugs formed at narrow spaces with a high density.
摘要翻译：本发明涉及半导体器件和形成半导体器件的接触插塞的方法。根据该方法，在形成有接合区域的半导体基板上形成第一电介质层。在第一电介质层上形成硬掩模。对应于接合区域的硬掩模和第一介电层被蚀刻以形成沟槽。间隙形成在沟槽的侧壁上。使用使用间隔物和硬掩模的蚀刻工艺在第一介电层中形成接触孔，使得接合区域露出。接触孔用导电材料间隙填充，从而形成接触塞。因此，可以容易地在高密度的狭窄空间形成的接触塞上形成位线。

7. 发明申请

US20090023279A1 METHOD OF FABRICATING FLASH MEMORY DEVICE 失效
标题翻译：制造闪存存储器件的方法
公开(公告)号：US20090023279A1
公开(公告)日：2009-01-22
申请号：US12131626
申请日：2008-06-02
申请人： Eun Soo Kim , Jung Geun Kim , Suk Joong Kim
发明人： Eun Soo Kim , Jung Geun Kim , Suk Joong Kim
IPC分类号： H01L21/311 , H01L21/28
CPC分类号： H01L21/764 , H01L27/115 , H01L27/11521
摘要： The present invention relates to a method of fabricating a flash memory device and includes forming an air-gap having a low dielectric constant between word lines and floating gates. Further, a tungsten nitride (WN) layer is formed on sidewalls of a tungsten (W) layer for a control gate. Hence, the cross section of the control gate that is finally formed can be increased while preventing abnormal oxidization of the tungsten layer in a subsequent annealing process. The method of the present invention can improve interference between neighboring word lines and, thus improve the reliability of a device. Accordingly, a robust high-speed device can be implemented.
摘要翻译：本发明涉及一种制造闪速存储器件的方法，包括在字线和浮栅之间形成具有低介电常数的气隙。此外，在用于控制栅极的钨（W）层的侧壁上形成氮化钨（WN）层。因此，可以提高最终形成的控制栅极的横截面，同时防止随后的退火工艺中钨层的异常氧化。本发明的方法可以改善相邻字线之间的干扰，从而提高设备的可靠性。因此，可以实现鲁棒的高速设备。

8. 发明申请

US20090004819A1 Method of Fabricating Flash Memory Device 审中-公开
标题翻译：制造闪存设备的方法
公开(公告)号：US20090004819A1
公开(公告)日：2009-01-01
申请号：US11963906
申请日：2007-12-24
申请人： Whee Won Cho , Eun Soo Kim , Suk Joong Kim
发明人： Whee Won Cho , Eun Soo Kim , Suk Joong Kim
IPC分类号： H01L21/76
CPC分类号： H01L27/115 , H01L27/11521
摘要： In one aspect of the inventive method, a tunnel insulating film, a first conductive layer, and an isolation mask pattern are formed over a semiconductor substrate. The first conductive layer and the tunnel insulating film are patterned along the isolation mask pattern. A trench is formed in the semiconductor substrate. The trench is gap filled with a first insulating film. A polishing process is performed in order to expose the first conductive layer. A height of the first insulating film is lowered. The first conductive layer on the first insulating film is gap-filled with a second insulating film.
摘要翻译：在本发明方法的一个方面中，在半导体衬底上形成隧道绝缘膜，第一导电层和隔离掩模图案。第一导电层和隧道绝缘膜沿着隔离掩模图案被图案化。在半导体衬底中形成沟槽。沟槽填充有第一绝缘膜。进行抛光处理以露出第一导电层。第一绝缘膜的高度降低。第一绝缘膜上的第一导电层用第二绝缘膜间隙填充。

9. 发明申请

US20090004818A1 Method of Fabricating Flash Memory Device 审中-公开
标题翻译：制造闪存设备的方法
公开(公告)号：US20090004818A1
公开(公告)日：2009-01-01
申请号：US11956865
申请日：2007-12-14
申请人： Seung Woo Shin , Eun Soo Kim , Suk Joong Kim , Jong Hye Cho
发明人： Seung Woo Shin , Eun Soo Kim , Suk Joong Kim , Jong Hye Cho
IPC分类号： H01L21/762
CPC分类号： H01L21/76232 , H01L27/11521
摘要： Disclosed herein is a method of fabricating a semiconductor flash memory device, which method avoids and prevents damage to the conductive layer of a floating gate. The disclosed method can prevent a reduction in the charge trap density characteristics and improve the yield of the device.
摘要翻译：本文公开了一种制造半导体闪速存储器件的方法，该方法避免并防止对浮动栅极的导电层的损坏。所公开的方法可以防止电荷陷阱密度特性的降低并且提高器件的产量。

10. 发明授权

US09000874B2 Planar transformer 有权
标题翻译：平面变压器
公开(公告)号：US09000874B2
公开(公告)日：2015-04-07
申请号：US13702038
申请日：2011-06-03
申请人： Eun Soo Kim , Bong Geun Chung
发明人： Eun Soo Kim , Bong Geun Chung
IPC分类号： H01F27/28 , H01F3/14 , H01F27/24 , H01F38/08
CPC分类号： H01F27/24 , H01F3/14 , H01F5/00 , H01F27/263 , H01F27/2804 , H01F27/306 , H01F38/08
摘要： Disclosed is a planar transformer including a first planar core which is formed of a magnetic substance, a lower secondary winding which is disposed to enclose a first left sill of the first planar core between a first rear sill and a first front sill of the first planar core; a primary winding which is disposed on the lower secondary winding so as to enclose first left and right sills of the first planar core; an upper secondary winding which is disposed on the primary winding to enclose the first left sill of the first planar core; and a second planar core disposed on the upper secondary winding.
摘要翻译：公开了一种平面变压器，其包括由磁性物质形成的第一平面磁芯，下部次级绕组被设置为将第一平面磁芯的第一左边框围绕在第一平台的第一后梁和第一平面的第一前梁之间核心; 初级绕组，其设置在所述下次级绕组上，以封闭所述第一平面芯的第一左，右门槛; 上部次级绕组，其设置在所述初级绕组上以包围所述第一平面芯的所述第一左槛; 以及设置在上次级绕组上的第二平面磁芯。

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