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1. 发明申请

US20100127295A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100127295A1
公开(公告)日：2010-05-27
申请号：US12622271
申请日：2009-11-19
申请人： Sun Kyung Kim , Jin Wook Lee , Hyun Kyong Cho
发明人： Sun Kyung Kim , Jin Wook Lee , Hyun Kyong Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L2933/0083
摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n，第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

2. 发明授权

US08823029B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08823029B2
公开(公告)日：2014-09-02
申请号：US13240927
申请日：2011-09-22
申请人： Sun Kyung Kim , Jin Wook Lee , Hyun Kyong Cho
发明人： Sun Kyung Kim , Jin Wook Lee , Hyun Kyong Cho
IPC分类号： H01L33/22 , H01L33/20
CPC分类号： H01L33/20 , H01L33/22 , H01L2933/0083
摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n，第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

3. 发明申请

US20120012859A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120012859A1
公开(公告)日：2012-01-19
申请号：US13240927
申请日：2011-09-22
申请人： Sun Kyung KIM , Jin Wook Lee , Hyun Kyong Cho
发明人： Sun Kyung KIM , Jin Wook Lee , Hyun Kyong Cho
IPC分类号： H01L33/20 , H01L33/32
CPC分类号： H01L33/20 , H01L33/22 , H01L2933/0083
摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n，第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

4. 发明授权

US08049239B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08049239B2
公开(公告)日：2011-11-01
申请号：US12622271
申请日：2009-11-19
申请人： Sun Kyung Kim , Jin Wook Lee , Hyun Kyong Cho
发明人： Sun Kyung Kim , Jin Wook Lee , Hyun Kyong Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L2933/0083
摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n，第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

5. 发明授权

US08592848B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08592848B2
公开(公告)日：2013-11-26
申请号：US13423747
申请日：2012-03-19
申请人： Hyun Kyong Cho , Sun Kyung Kim , Gyeong Geun Park
发明人： Hyun Kyong Cho , Sun Kyung Kim , Gyeong Geun Park
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L2933/0083
摘要： The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.
摘要翻译：发光器件和相应的制造方法，所述发光器件包括第二电极层; 形成在所述第二电极层上的第二导电类型半导体层; 形成在所述第二导电类型半导体层上的有源层; 形成有第一光子晶体的第一导电型半导体层，其包括形成在所述有源层上的掩模层和气隙; 以及形成在所述第一导电类型半导体层上的第一电极层。

6. 发明授权

US07652295B2 Light emitting device having light extraction structure and method for manufacturing the same 有权
标题翻译：具有光提取结构的发光器件及其制造方法
公开(公告)号：US07652295B2
公开(公告)日：2010-01-26
申请号：US11797727
申请日：2007-05-07
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22 , H01L29/227 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译：公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。

7. 发明授权

US08648376B2 Light emitting device having light extraction structure and method for manufacturing the same 有权
标题翻译：具有光提取结构的发光器件及其制造方法
公开(公告)号：US08648376B2
公开(公告)日：2014-02-11
申请号：US13612343
申请日：2012-09-12
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
IPC分类号： H01L33/02 , H01L33/10
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译：公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。

8. 发明授权

US08283690B2 Light emitting device having light extraction structure and method for manufacturing the same 有权
标题翻译：具有光提取结构的发光器件及其制造方法
公开(公告)号：US08283690B2
公开(公告)日：2012-10-09
申请号：US13214871
申请日：2011-08-22
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
IPC分类号： H01L33/02 , H01L33/10
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译：公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。

9. 发明授权

US08164107B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08164107B2
公开(公告)日：2012-04-24
申请号：US12628950
申请日：2009-12-01
申请人： Hyun Kyong Cho , Sun Kyung Kim , Gyeong Geun Park
发明人： Hyun Kyong Cho , Sun Kyung Kim , Gyeong Geun Park
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L2933/0083
摘要： The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.
摘要翻译：发光器件和相应的制造方法，所述发光器件包括第二电极层; 形成在所述第二电极层上的第二导电类型半导体层; 形成在所述第二导电类型半导体层上的有源层; 形成有第一光子晶体的第一导电型半导体层，其包括形成在所述有源层上的掩模层和气隙; 以及形成在所述第一导电类型半导体层上的第一电极层。

10. 发明申请

US20100140643A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100140643A1
公开(公告)日：2010-06-10
申请号：US12628950
申请日：2009-12-01
申请人： Hyun Kyong Cho , Sun Kyung KIM , Gyeong Geun Park
发明人： Hyun Kyong Cho , Sun Kyung KIM , Gyeong Geun Park
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L2933/0083
摘要： The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.
摘要翻译：发光器件和相应的制造方法，所述发光器件包括第二电极层; 形成在所述第二电极层上的第二导电类型半导体层; 形成在所述第二导电类型半导体层上的有源层; 形成有第一光子晶体的第一导电型半导体层，其包括形成在所述有源层上的掩模层和气隙; 以及形成在所述第一导电类型半导体层上的第一电极层。

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