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1. 发明授权

US09462199B2 Image sensors, image processing systems including same, and methods of operating the same 有权
标题翻译：图像传感器，包括其的图像处理系统及其操作方法
公开(公告)号：US09462199B2
公开(公告)日：2016-10-04
申请号：US14051999
申请日：2013-10-11
申请人： Sun Jung Kim , Kwang Hyun Lee , Seung Hoon Lee , Ju Hwan Jung , Young Gu Jin
发明人： Sun Jung Kim , Kwang Hyun Lee , Seung Hoon Lee , Ju Hwan Jung , Young Gu Jin
IPC分类号： H04N5/335 , H04N5/357 , H04N5/378
CPC分类号： H04N5/335 , H04N5/357 , H04N5/378
摘要： A method of operating an image sensor includes: generating a pixel signal according to intensity of incident light; and generating a digital pixel signal based on a comparison between the pixel signal and at least one reference current. Accordingly, a current output from a 1T pixel in the image sensor is sensed such that the influence of noise is reduced and a pixel signal is sensed more precisely.
摘要翻译：操作图像传感器的方法包括：根据入射光的强度产生像素信号; 以及基于像素信号和至少一个参考电流之间的比较产生数字像素信号。因此，感测图像传感器中的1T像素的电流输出，使得噪声的影响减小，并且更精确地感测像素信号。

2. 发明申请

US20160028977A1 CMOS IMAGE SENSORS WITH PHOTOGATE STRUCTURES AND SENSING TRANSISTORS, OPERATION METHODS THEREOF, AND IMAGE PROCESSING SYSTEMS INCLUDING THE SAME 有权
标题翻译：具有光学结构和感测晶体管的CMOS图像传感器，其操作方法和包括其的图像处理系统
公开(公告)号：US20160028977A1
公开(公告)日：2016-01-28
申请号：US14877539
申请日：2015-10-07
申请人： Young Gu JIN , Min Ho Kim , Tae Chan Kim , Dong Ki Min , Sang Chul Sul , Tae Seok Oh , Kwang Hyun Lee , Tae Yon Lee , Ju Hwan Jung
发明人： Young Gu JIN , Min Ho Kim , Tae Chan Kim , Dong Ki Min , Sang Chul Sul , Tae Seok Oh , Kwang Hyun Lee , Tae Yon Lee , Ju Hwan Jung
IPC分类号： H04N5/363 , H04N5/378 , H04N5/374 , H01L27/146
CPC分类号： H04N5/363 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14643 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/378
摘要： ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.
摘要翻译： ACMOS图像传感器包括具有多个像素的像素阵列。所述多个像素中的每一个包括：被配置为基于第一栅极电压来控制的光栅结构; 以及感测晶体管，其包括形成在衬底区域中的电荷袋区域，所述感测晶体管被配置为基于第二栅极电压来控制。基于第一栅极电压，光栅结构被配置为集成响应于入射在衬底区域上的光而产生的电荷。感测晶体管被配置为根据第一栅极电压和第二栅极电压之间的差异，根据从光栅结构传输到电荷袋区域的电荷来调节感测晶体管的阈值电压和感测晶体管中的电流的至少一个第二栅极电压。

3. 发明授权

US09894301B2 CMOS image sensors with photogate structures and sensing transistors, operation methods thereof, and image processing systems including the same 有权
公开(公告)号：US09894301B2
公开(公告)日：2018-02-13
申请号：US14877539
申请日：2015-10-07
申请人： Young Gu Jin , Min Ho Kim , Tae Chan Kim , Dong Ki Min , Sang Chul Sul , Tae Seok Oh , Kwang Hyun Lee , Tae Yon Lee , Ju Hwan Jung
发明人： Young Gu Jin , Min Ho Kim , Tae Chan Kim , Dong Ki Min , Sang Chul Sul , Tae Seok Oh , Kwang Hyun Lee , Tae Yon Lee , Ju Hwan Jung
IPC分类号： H01L27/00 , H04N5/363 , H01L27/146 , H04N5/3745 , H04N5/374 , H04N5/378
CPC分类号： H04N5/363 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14643 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/378
摘要： ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

4. 发明授权

US09106858B2 Image sensor, method of operating the same, and image processing system including the same 有权
标题翻译：图像传感器，其操作方法以及包括其的图像处理系统
公开(公告)号：US09106858B2
公开(公告)日：2015-08-11
申请号：US14043169
申请日：2013-10-01
申请人： Young Gu Jin , Ju Hwan Jung , Yoon Dong Park
发明人： Young Gu Jin , Ju Hwan Jung , Yoon Dong Park
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146 , H04N5/3745 , H04N5/374
CPC分类号： H04N5/37457 , G06T5/20 , G06T2207/10024 , G06T2207/10028 , H01L27/14605 , H01L27/14614 , H01L27/14616 , H01L27/1463 , H01L27/14643 , H04N5/374 , H04N5/3745 , H04N5/37455 , H04N5/3765 , H04N5/378 , H04N5/63
摘要： The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.
摘要翻译：图像传感器包括像素阵列，其包括多个单位像素，每个像素包括单个晶体管和连接到该单个晶体管的主体的光电二极管，行驱动器块被配置为使像素阵列中的多个行中的一个能够进入读出模式和读出块，被配置为感测和放大从已经进入读出模式的行中包括的多个单位像素中的每一个输出的像素信号。

5. 发明授权

US09800814B2 Image sensor, method of operating the same, and image processing system including the same 有权
公开(公告)号：US09800814B2
公开(公告)日：2017-10-24
申请号：US14816486
申请日：2015-08-03
申请人： Young Gu Jin , Ju Hwan Jung , Yoon Dong Park
发明人： Young Gu Jin , Ju Hwan Jung , Yoon Dong Park
IPC分类号： H04N3/14 , H04N5/335 , H04N5/3745 , H04N5/378 , H04N5/63 , G06T5/20 , H04N5/376 , H01L27/146 , H04N5/374
CPC分类号： H04N5/37457 , G06T5/20 , G06T2207/10024 , G06T2207/10028 , H01L27/14605 , H01L27/14614 , H01L27/14616 , H01L27/1463 , H01L27/14643 , H04N5/374 , H04N5/3745 , H04N5/37455 , H04N5/3765 , H04N5/378 , H04N5/63
摘要： The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.

6. 发明申请

US20150341585A1 IMAGE SENSOR, METHOD OF OPERATING THE SAME, AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME 审中-公开
标题翻译：图像传感器，其操作方法和包括其的图像处理系统
公开(公告)号：US20150341585A1
公开(公告)日：2015-11-26
申请号：US14816486
申请日：2015-08-03
申请人： Young Gu JIN , Ju Hwan Jung , Yoon Dong Park
发明人： Young Gu JIN , Ju Hwan Jung , Yoon Dong Park
IPC分类号： H04N5/3745 , H01L27/146 , G06T5/20 , H04N5/376 , H04N5/378 , H04N5/63
CPC分类号： H04N5/37457 , G06T5/20 , G06T2207/10024 , G06T2207/10028 , H01L27/14605 , H01L27/14614 , H01L27/14616 , H01L27/1463 , H01L27/14643 , H04N5/374 , H04N5/3745 , H04N5/37455 , H04N5/3765 , H04N5/378 , H04N5/63
摘要： The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.
摘要翻译：图像传感器包括像素阵列，其包括多个单位像素，每个像素包括单个晶体管和连接到该单个晶体管的主体的光电二极管，行驱动器块被配置为使像素阵列中的多个行中的一个能够进入读出模式和读出块，被配置为感测和放大从已经进入读出模式的行中包括的多个单位像素中的每一个输出的像素信号。

7. 发明授权

US09029785B2 Method of fabricating microlens, and depth sensor including microlens 有权
标题翻译：微透镜的制造方法，以及微透镜的深度传感器
公开(公告)号：US09029785B2
公开(公告)日：2015-05-12
申请号：US13407879
申请日：2012-02-29
申请人： Doo Cheol Park , Seung Hyuk Chang , Myung-Sun Kim , Won Joo Kim , Ju Hwan Jung , Seung Hoon Lee , Kwang-Min Lee , Hyoung Soo Ko
发明人： Doo Cheol Park , Seung Hyuk Chang , Myung-Sun Kim , Won Joo Kim , Ju Hwan Jung , Seung Hoon Lee , Kwang-Min Lee , Hyoung Soo Ko
IPC分类号： G02B13/00 , G02B3/00 , G02B13/14 , G03F7/40 , G02B23/14
CPC分类号： G02B3/0018 , G02B3/0056 , G02B13/14 , G02B23/14 , G03F7/40
摘要： A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.
摘要翻译：制造微透镜的方法包括在衬底上形成光致抗蚀剂层，图案化光致抗蚀剂层，然后回流光致抗蚀剂图案。通过用粘度为150至250cp的液体光致抗蚀剂涂覆基底来形成光致抗蚀剂层。深度传感器包括基板和在基板的上部的光电转换元件，设置在基板上的金属布线部分，用于将入射光聚焦到光电转换元件上的微透镜阵列，并且这些光束避免了布线金属配线部。深度传感器还包括呈现其上形成有微透镜的平坦上表面的层。该层可以是介于微透镜和金属布线部之间的专用平坦化层或IR滤光器。

8. 发明授权

US07911928B2 High density data storage device and data recording or reproduction method using the same 失效
标题翻译：高密度数据存储设备和使用其的数据记录或再现方法
公开(公告)号：US07911928B2
公开(公告)日：2011-03-22
申请号：US11710430
申请日：2007-02-26
申请人： Seung Bum Hong , Ju Hwan Jung , Hyoung Soo Ko
发明人： Seung Bum Hong , Ju Hwan Jung , Hyoung Soo Ko
IPC分类号： G11B9/00
CPC分类号： G11B9/04 , B82Y10/00 , G11B9/1409 , G11B9/149
摘要： A high density data storage device and a data recording or reproduction method using the same, which can record or reproduce high density data without contact, thereby preventing data errors due to contact are provided. The high density data storage device uses a recording medium and a probe. The recording medium is a thin film made from phase change material or oxide resistance change material, and the probe has a tip formed in a lower portion thereof, which moves with a spacing from the top of the recording medium. Further, recording or reproduction of data is performed through electric field or heat emission, which is generated in the tip of the probe, without direct contact between the recording medium and the probe, so that it is possible to remove instability caused by contact between the recording medium and the probe and to stably record or reproduce data in or from the recording medium without errors.
摘要翻译：提供一种高密度数据存储装置和使用该高密度数据存储装置的数据记录或再现方法，其可以不接触地记录或再现高密度数据，从而防止由于接触而引起的数据错误。高密度数据存储装置使用记录介质和探针。记录介质是由相变材料或氧化物电阻改变材料制成的薄膜，并且探针具有形成在其下部的尖端，其与记录介质的顶部间隔地移动。此外，通过在探针的尖端中产生的电场或发热进行数据的记录或再现，而不会在记录介质和探针之间直接接触，从而可以消除由于接触引起的不稳定性记录介质和探头，并且在没有错误的情况下稳定地在记录介质中记录或再现数据。

9. 发明申请

US20080049589A1 High density data storage device and data recording or reproduction method using the same 失效
标题翻译：高密度数据存储设备和使用其的数据记录或再现方法
公开(公告)号：US20080049589A1
公开(公告)日：2008-02-28
申请号：US11710430
申请日：2007-02-26
申请人： Seung Bum Hong , Ju Hwan Jung , Hyoung Soo Ko
发明人： Seung Bum Hong , Ju Hwan Jung , Hyoung Soo Ko
IPC分类号： G11B9/04
CPC分类号： G11B9/04 , B82Y10/00 , G11B9/1409 , G11B9/149
摘要： A high density data storage device and a data recording or reproduction method using the same, which can record or reproduce high density data without contact, thereby preventing data errors due to contact are provided. The high density data storage device uses a recording medium and a probe. The recording medium is a thin film made from phase change material or oxide resistance change material, and the probe has a tip formed in a lower portion thereof, which moves with a spacing from the top of the recording medium. Further, recording or reproduction of data is performed through electric field or heat emission, which is generated in the tip of the probe, without direct contact between the recording medium and the probe, so that it is possible to remove instability caused by contact between the recording medium and the probe and to stably record or reproduce data in or from the recording medium without errors.
摘要翻译：提供一种高密度数据存储装置和使用该高密度数据存储装置的数据记录或再现方法，其可以不接触地记录或再现高密度数据，从而防止由于接触而引起的数据错误。高密度数据存储装置使用记录介质和探针。记录介质是由相变材料或氧化物电阻改变材料制成的薄膜，并且探针具有形成在其下部的尖端，其与记录介质的顶部间隔地移动。此外，通过在探针的尖端中产生的电场或发热进行数据的记录或再现，而不会在记录介质和探针之间直接接触，从而可以消除由于接触引起的不稳定性记录介质和探头，并且在没有错误的情况下稳定地在记录介质中记录或再现数据。

10. 发明授权

US09118856B2 Sensor, data processing system, and operating method 有权
标题翻译：传感器，数据处理系统和操作方法
公开(公告)号：US09118856B2
公开(公告)日：2015-08-25
申请号：US13541973
申请日：2012-07-05
申请人： Won Joo Kim , Hyoung Soo Ko , Doo Cheol Park , Hee Woo Park , Kwang-Min Lee , Ju Hwan Jung
发明人： Won Joo Kim , Hyoung Soo Ko , Doo Cheol Park , Hee Woo Park , Kwang-Min Lee , Ju Hwan Jung
IPC分类号： H04N15/00 , H01L27/146 , H04N5/369 , H04N13/02
CPC分类号： H04N5/3696 , H01L27/14609
摘要： An image sensor includes a unit pixel including a plurality of color pixels with a depth pixel. A first signal line group of first signal lines is used to supply first control signals that control operation of the plurality of color pixels, and a separate second signal line group of second signal lines is used to supply second control signals that control operation of the depth pixel.
摘要翻译：图像传感器包括具有深度像素的多个彩色像素的单位像素。使用第一信号线的第一信号线组来提供控制多个彩色像素的操作的第一控制信号，并且使用第二信号线的单独的第二信号线组来提供控制深度的操作的第二控制信号像素。

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