专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10312390B2 Light receiving device and method of producing light receiving device 有权
公开(公告)号：US10312390B2
公开(公告)日：2019-06-04
申请号：US15935848
申请日：2018-03-26
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Sundararajan Balasekaran , Daisuke Kimura
IPC分类号： H01L31/0352 , H01L27/146 , H01L31/0304 , H01L31/18 , H01L31/109 , H01L31/0224
摘要： A light receiving device includes a substrate having a principal surface and a back surface including a light receiving surface; a metal wire disposed on the principal surface, the metal wire including a bonding portion having an opening; and photodiodes that is arranged in an array on the substrate, each of the photodiodes including an electrode connected to the bonding portion of the metal wire and a semiconductor mesa including a stacked semiconductor layer, the stacked semiconductor layer including a first semiconductor layer disposed on the substrate, an optical absorption layer including a type-II superlattice structure, and a second semiconductor layer. Each of the electrodes of the photodiodes is disposed on a side surface of the semiconductor mesa in contact with the first semiconductor layer. The first semiconductor layer faces to the light receiving surface through the opening of the bonding portion.

2. 发明授权

US09523871B2 Semiconductor optical modulator and method for manufacturing semiconductor optical modulator 有权
标题翻译：半导体光调制器及制造半导体光调制器的方法
公开(公告)号：US09523871B2
公开(公告)日：2016-12-20
申请号：US14796770
申请日：2015-07-10
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Takamitsu Kitamura , Hideki Yagi , Daisuke Kimura , Hirohiko Kobayashi , Masataka Watanabe
IPC分类号： G02F1/025 , G02F1/21 , G02F1/225
CPC分类号： G02F1/025 , G02F1/218 , G02F1/2255
摘要： A semiconductor optical modulator includes a substrate having a principal surface; a waveguide disposed on the principal surface of the substrate, the waveguide extending in a first direction; a first electrode disposed on the waveguide, the first electrode being in contact with an upper surface of the waveguide; a first wiring connected to the first electrode, the first wiring extending in a second direction intersecting the first direction; a build-up portion connected to the first wiring; a second wiring connected to the build-up portion, the second wiring extending in a plane parallel to the principal surface of the substrate; and a resin layer disposed on the substrate, the resin layer embedding the first wiring and the build-up portion. The build-up portion extends along a third direction, the third direction intersecting perpendicularly to the principal surface of the substrate. The second wiring is disposed on the resin layer.
摘要翻译：半导体光调制器包括具有主表面的基板; 布置在所述基板的主表面上的波导，所述波导沿第一方向延伸; 设置在所述波导上的第一电极，所述第一电极与所述波导的上表面接触; 连接到所述第一电极的第一布线，所述第一布线沿与所述第一方向相交的第二方向延伸; 连接到第一布线的积聚部分; 连接到所述积聚部分的第二布线，所述第二布线在平行于所述基板的主表面的平面中延伸; 以及设置在基板上的树脂层，树脂层嵌入第一布线和积层部。堆积部分沿着第三方向延伸，第三方向垂直于衬底的主表面相交。第二布线设置在树脂层上。

3. 发明授权

US10665736B2 Infrared light receiving device, method for fabricating infrared light receiving device 有权
公开(公告)号：US10665736B2
公开(公告)日：2020-05-26
申请号：US16276402
申请日：2019-02-14
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Daisuke Kimura , Sundararajan Balasekaran
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/0304 , H01L31/042 , H01L31/109
摘要： An infrared light receiving device includes: a structure having a supporting base and a laminate body, the laminate body including a first superlattice layer, a second superlattice layer and a semiconductor region, the first superlattice layer, the second superlattice layer and the semiconductor region being arranged sequentially on the supporting base, and the laminate body having an array of semiconductor mesas for photodiodes and a recess defining the array of semiconductor mesas; and a first electrode connected to the first superlattice layer. The first superlattice layer has an n-type conductivity. The semiconductor region has a p-type conductivity. The first superlattice layer has a type-II superlattice structure and forming a heterojunction with the supporting base. The recess has first and second recess portions. The second recess portion has a bottom in the first superlattice layer. The first recess portion has a depth larger than that of the second recess portion.

4. 发明授权

US10361335B2 Light receiving element and method of manufacturing the same 有权
公开(公告)号：US10361335B2
公开(公告)日：2019-07-23
申请号：US15968266
申请日：2018-05-01
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Daisuke Kimura , Sundararajan Balasekaran
IPC分类号： H01L27/146 , H01L31/18 , H01L31/0352 , H01L31/109 , H01L31/0304
摘要： A method includes: forming a first mask having a first opening and a second opening; performing etching by using the first mask, to allow the etching to progress at a higher rate in the second opening than in the first opening; forming a second mask having a third opening and a fourth opening; performing etching by using the second mask, to form a mesa in a region interposed by the third opening, and an n-type contact region in the fourth opening; and forming a first electrode on the mesa and a second electrode on the n-type contact region, the first electrode being electrically connected to the third layer, the second electrode being electrically connected to the first layer, wherein a region covered with the first mask and exposed through the fourth opening of the second mask turns into the n-type contact region after the etching using the second mask.

5. 发明申请

US20190259891A1 INFRARED LIGHT RECEIVING DEVICE, METHOD FOR FABRICATING INFRARED LIGHT RECEIVING DEVICE 审中-公开
公开(公告)号：US20190259891A1
公开(公告)日：2019-08-22
申请号：US16276402
申请日：2019-02-14
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Daisuke Kimura , Sundararajan BALASEKARAN
IPC分类号： H01L31/0352 , H01L31/0304 , H01L31/18
摘要： An infrared light receiving device includes: a structure having a supporting base and a laminate body, the laminate body including a first superlattice layer, a second superlattice layer and a semiconductor region, the first superlattice layer, the second superlattice layer and the semiconductor region being arranged sequentially on the supporting base, and the laminate body having an array of semiconductor mesas for photodiodes and a recess defining the array of semiconductor mesas; and a first electrode connected to the first superlattice layer. The first superlattice layer has an n-type conductivity. The semiconductor region has a p-type conductivity. The first superlattice layer has a type-II superlattice structure and forming a heterojunction with the supporting base. The recess has first and second recess portions. The second recess portion has a bottom in the first superlattice layer. The first recess portion has a depth larger than that of the second recess portion.

6. 发明申请

US20180342545A1 LIGHT RECEIVING ELEMENT AND LIGHT RECEIVING DEVICE 审中-公开
公开(公告)号：US20180342545A1
公开(公告)日：2018-11-29
申请号：US15961064
申请日：2018-04-24
申请人： Sumitomo Electric Industries, Ltd.
发明人： Daisuke Kimura , Hiroshi Inada
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/0224 , H01L31/02 , H01L23/00 , H01L31/0216 , H01L31/0304 , H01L31/18
CPC分类号： H01L27/1465 , H01L24/11 , H01L24/13 , H01L24/16 , H01L27/14636 , H01L27/14694 , H01L31/02005 , H01L31/02161 , H01L31/022408 , H01L31/0304 , H01L31/035236 , H01L31/035281 , H01L31/184 , H01L2224/13014 , H01L2224/13016 , H01L2224/13109 , H01L2224/1403 , H01L2224/14131 , H01L2224/14179 , H01L2224/16145 , H01L2924/3511
摘要： A light receiving element includes: a semiconductor layer including a first layer, a light absorbing layer, a second layer, and a third layer, the semiconductor layer having a plurality of mesas, a terrace, and a groove; a first electrode provided on the mesas and electrically connected to the third layer; a first bump provided on the first electrode and electrically connected to the first electrode; a second electrode provided on a portion extending from the terrace to an inner side of the groove and electrically connected to the first layer; and a second bump larger than the first bump, is provided on the terrace, and is electrically connected to the second electrode, wherein the mesas and the terrace include the semiconductor layer, the groove extends to the first layer, and the second electrode is in contact with the first layer on an inner side of the groove.

7. 发明授权

US10950744B2 Light receiving element and method of manufacturing the same 有权
公开(公告)号：US10950744B2
公开(公告)日：2021-03-16
申请号：US16432708
申请日：2019-06-05
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Daisuke Kimura , Sundararajan Balasekaran
IPC分类号： H01L27/146 , H01L31/18 , H01L31/0352 , H01L31/109 , H01L31/0304 , H01L31/0216 , H01L31/0224
摘要： A light receiving element is obtained by: forming a first mask having a first opening and a second opening; performing etching by using the first mask, to allow the etching to progress at a higher rate in the second opening than in the first opening; forming a second mask having a third opening and a fourth opening; performing etching by using the second mask, to form a mesa in a region interposed by the third opening, and an n-type contact region in the fourth opening; and forming a first electrode on the mesa and a second electrode on the n-type contact region, the first electrode being electrically connected to the third layer, the second electrode being electrically connected to the first layer, wherein a region covered with the first mask and exposed through the fourth opening of the second mask turns into the n-type contact region after the etching using the second mask.

8. 发明授权

US10319778B2 Light receiving element and light receiving device 有权
公开(公告)号：US10319778B2
公开(公告)日：2019-06-11
申请号：US15961064
申请日：2018-04-24
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Daisuke Kimura , Hiroshi Inada
IPC分类号： H01L31/00 , H01L27/146 , H01L31/0224 , H01L31/02 , H01L23/00 , H01L31/0216 , H01L31/0304 , H01L31/0352 , H01L31/18
摘要： A light receiving element includes: a semiconductor layer including a first layer, a light absorbing layer, a second layer, and a third layer, the semiconductor layer having a plurality of mesas, a terrace, and a groove; a first electrode provided on the mesas and electrically connected to the third layer; a first bump provided on the first electrode and electrically connected to the first electrode; a second electrode provided on a portion extending from the terrace to an inner side of the groove and electrically connected to the first layer; and a second bump larger than the first bump, is provided on the terrace, and is electrically connected to the second electrode, wherein the mesas and the terrace include the semiconductor layer, the groove extends to the first layer, and the second electrode is in contact with the first layer on an inner side of the groove.

9. 发明申请

US20180342635A1 LIGHT RECEIVING DEVICE AND METHOD OF PRODUCING LIGHT RECEIVING DEVICE 审中-公开
公开(公告)号：US20180342635A1
公开(公告)日：2018-11-29
申请号：US15935848
申请日：2018-03-26
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Sundararajan BALASEKARAN , Daisuke Kimura
IPC分类号： H01L31/0352 , H01L27/146 , H01L31/0304 , H01L31/0224 , H01L31/18 , H01L31/109
CPC分类号： H01L31/035236 , H01L27/14636 , H01L27/14649 , H01L27/14694 , H01L31/022408 , H01L31/0304 , H01L31/03046 , H01L31/035281 , H01L31/109 , H01L31/184 , H01L31/1844 , H01L31/1892
摘要： A light receiving device includes a substrate having a principal surface and a back surface including a light receiving surface; a metal wire disposed on the principal surface, the metal wire including a bonding portion having an opening; and photodiodes that is arranged in an array on the substrate, each of the photodiodes including an electrode connected to the bonding portion of the metal wire and a semiconductor mesa including a stacked semiconductor layer, the stacked semiconductor layer including a first semiconductor layer disposed on the substrate, an optical absorption layer including a type-II superlattice structure, and a second semiconductor layer. Each of the electrodes of the photodiodes is disposed on a side surface of the semiconductor mesa in contact with the first semiconductor layer. The first semiconductor layer faces to the light receiving surface through the opening of the bonding portion.

10. 发明授权

US09563100B2 Optical semiconductor device and method of producing the same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US09563100B2
公开(公告)日：2017-02-07
申请号：US14807501
申请日：2015-07-23
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Ryuji Masuyama , Naoya Kono , Daisuke Kimura , Hirohiko Kobayashi , Takamitsu Kitamura , Hideki Yagi
IPC分类号： G02F1/025 , G02F1/225 , G02B6/132 , G02F1/21 , G02B6/136
CPC分类号： G02F1/2257 , G02B6/132 , G02B6/136 , G02F1/025 , G02F1/2255 , G02F2001/212 , G02F2201/12
摘要： An optical semiconductor device including: a substrate having a principal surface; first and second optical waveguides disposed on the principal surface of the substrate, the first and second optical waveguides extending in a first direction, the second optical waveguide being arranged adjacent to the first optical waveguide in a second direction intersecting with the first direction; first and second signal electrodes disposed on the first and second optical waveguides; a resistor disposed on the principal surface, the resistor being arranged between the first optical waveguide and the second optical waveguide, the resistor being electrically connected to the first signal electrode and the second signal electrode; a resin layer disposed on the principal surface, top surfaces of the first and second signal electrodes, and the resistor; and a capacitor disposed on the resin layer, the capacitor being electrically connected to the resistor through an opening of the resin layer.
摘要翻译： 1.一种光学半导体装置，包括：具有主面的基板; 第一和第二光波导设置在基板的主表面上，第一和第二光波导沿第一方向延伸，第二光波导在与第一方向交叉的第二方向上与第一光波导相邻布置; 布置在第一和第二光波导上的第一和第二信号电极; 电阻器，设置在所述主表面上，所述电阻器布置在所述第一光波导和所述第二光波导之间，所述电阻器电连接到所述第一信号电极和所述第二信号电极; 设置在主表面上的树脂层，第一和第二信号电极的顶表面和电阻器; 以及设置在树脂层上的电容器，电容器通过树脂层的开口与电阻器电连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式