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1. 发明授权

US06492716B1 Seal ring structure for IC containing integrated digital/RF/analog circuits and functions 有权
标题翻译： IC封装环结构，内含集成数字/射频/模拟电路及功能
公开(公告)号：US06492716B1
公开(公告)日：2002-12-10
申请号：US09846335
申请日：2001-04-30
申请人： Subhas Bothra , Thomas G. McKay , Ravi Jhota
发明人： Subhas Bothra , Thomas G. McKay , Ravi Jhota
IPC分类号： H01L2302
CPC分类号： H01L23/564 , H01L23/552 , H01L23/585 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Embodiments of the present invention provide a seal ring which includes a plurality of cuts separating the seal ring into seal ring portions which are disposed adjacent to different circuits in the integrated circuit die. The cuts reduce the noise coupling among the different circuits through the seal ring. To further isolate the sensitive RF/analog circuits from the noise generated by the digital circuit, the seal ring may be electrically (for dc noise) isolated from the substrate. This is accomplished, for instance, by inserting a polysilicon layer and gate oxide between the seal ring and the substrate. In addition, an n-well/p-well capacitor may be formed in series with the gate oxide, for instance, by implanting an n-well below the polysilicon layer in a p-type substrate. In this way, the seal ring provides substantially reduced noise coupling among the circuits but still maintains an effective wall around the periphery of the die to protect the circuits against moisture and ionic contamination penetration.
摘要翻译：本发明的实施例提供了一种密封环，其包括将密封环分隔成密封环部分的多个切口，所述密封环部分邻近集成电路管芯中的不同电路设置。切割可以通过密封环减少不同电路之间的噪声耦合。为了进一步将敏感的RF /模拟电路与数字电路产生的噪声隔离开，密封环可能是与基板隔离的电气（用于直流噪声）。这通过例如在密封环和衬底之间插入多晶硅层和栅极氧化物来实现。此外，n阱/ p阱电容器可以与栅极氧化物串联形成，例如通过在p型衬底中注入多晶硅层下面的n阱。以这种方式，密封环在电路之间提供显着降低的噪声耦合，但仍然保持围绕芯片周边的有效壁，以保护电路免受潮湿和离子污染的渗透。

2. 发明授权

US06570450B2 Efficient AC coupled CMOS RF amplifier 失效
公开(公告)号：US06570450B2
公开(公告)日：2003-05-27
申请号：US09825252
申请日：2001-04-02
申请人： Christopher D. Nilson , Thomas G. McKay
发明人： Christopher D. Nilson , Thomas G. McKay
IPC分类号： H03F318
CPC分类号： H03F1/308
摘要： Disclosed is a CMOS transistor amplifier for small RF signals which operates in a Class AB mode. The serially connected P channel and N channel transistors of the CMOS transistor pair have DC bias voltages applied to the control gates, and the small input signal is capacitively coupled to the gates of the CMOS transistor pair. In a preferred embodiment, the DC voltage bias for the P channel transistor is derived from a second P channel transistor which is approximately identical to the first P channel transistor in structure with the second P channel transistor serially connected with the current source and the voltage at the gate/drain of the transistor resistively coupled to the gate of the first P channel transistor. Similarly, the second bias circuit comprises a second N channel transistor which is approximately identical in structure to the first N channel transistor with the second N channel transistor serially connected with a current source and the bias voltage taken at the gate/drain of the second N channel transistor. The bias voltage is then applied through resistive means to the gate of the first N channel transistor.

3. 发明授权

US07015545B2 Split source RF MOSFET device 失效
公开(公告)号：US07015545B2
公开(公告)日：2006-03-21
申请号：US10101405
申请日：2002-03-18
申请人： Thomas G. McKay , Stephen Allott
发明人： Thomas G. McKay , Stephen Allott
IPC分类号： H01L29/76
CPC分类号： H01L29/1087 , H01L29/0692 , H01L29/41758 , H01L29/78
摘要： An RF MOS transistor having improved AC output conductance and AC output capacitance includes parallel interdigitated source and drain regions separated by channel regions and overlying gates. Grounded tap regions contacting an underlying well are placed contiguous to source regions and reduce distributed backgate resistance, lower backgate channel modulation, and lower output conductance.

4. 发明授权

US06782247B2 CMOS frequency conversion using dual mixers for sideband suppression 失效
标题翻译： CMOS频率转换使用双重混频器进行边带抑制
公开(公告)号：US06782247B2
公开(公告)日：2004-08-24
申请号：US09825250
申请日：2001-04-02
申请人： Christopher D. Nilson , Thomas G. McKay
发明人： Christopher D. Nilson , Thomas G. McKay
IPC分类号： H04B126
CPC分类号： H03D7/1441 , H03C3/40 , H03D7/1458 , H03D7/1466 , H03D7/1483 , H03D7/165 , H03D2200/0084
摘要： Disclosed is a frequency conversion circuit with sideband suppression in which a first mixer receives an in-phase signal (IFi) and is driven by a local oscillator having an in-phase (0°) oscillator signal (LOi), and produces two sideband signals (LO+IF, LO−IF). A second mixer receives a quadrature phase frequency signal (IFq+) and is driven by a local oscillator having a quadrature (180°) oscillator signal (LOq), and produces two sideband signals (LO+IFq, LO−IFq). One of the sidebands from the second mixer is 180° out of phase with respect to the same sideband from the first mixer. A signal combiner then receives and combines the two sidebands from the first mixer and the two sidebands from the second mixer, the signal combiner suppressing one sideband and enhancing the other sideband. In preferred embodiments, the mixers comprise MOSFET transistors and the signal combiner comprises capacitive elements.
摘要翻译：公开了一种具有边带抑制的频率转换电路，其中第一混频器接收同相信号（IFi）并且由具有同相（0°）振荡器信号（LOi）的本地振荡器驱动，并且产生两个边带信号（LO + IF，LO-IF）。第二混频器接收正交相位频率信号（IFq +）并且由具有正交（180°）振荡器信号（LOq）的本地振荡器驱动，并产生两个边带信号（LO + IFq，LO-IFq）。来自第二混合器的边带中的一个相对于来自第一混合器的相同边带为180°异相。然后，信号组合器接收并组合来自第一混频器的两个边带和来自第二混频器的两个边带，信号组合器抑制一个边带并增强另一个边带。在优选实施例中，混频器包括MOSFET晶体管，信号组合器包括电容元件。

5. 发明授权

US6051856A Voltage-controlled resistor utilizing bootstrap gate FET 失效
标题翻译：采用自举门FET的压控电阻
公开(公告)号：US6051856A
公开(公告)日：2000-04-18
申请号：US940339
申请日：1997-09-30
申请人： Thomas G. McKay , Joseph Barrera
发明人： Thomas G. McKay , Joseph Barrera
IPC分类号： H01L27/04 , H01L21/337 , H01L21/822 , H01L29/808 , H01C29/76
CPC分类号： H01L29/808
摘要： An improved FET for use as a voltage-controlled resistor includes a p-type control gate and a high-resistance connection to receive a control signal. The bootstrap frequency for the device is much lower than the signal frequency so that the signal frequency is decoupled from the control voltage to reduce distortion.
摘要翻译：用作压控电阻器的改进的FET包括p型控制栅极和用于接收控制信号的高电阻连接。器件的自举频率远低于信号频率，使信号频率与控制电压分离，以减少失真。

6. 发明授权

US07696572B2 Split source RF MOSFET device 失效
标题翻译：分离源RF MOSFET器件
公开(公告)号：US07696572B2
公开(公告)日：2010-04-13
申请号：US11210725
申请日：2005-08-25
申请人： Thomas G. McKay , Stephen Allott
发明人： Thomas G. McKay , Stephen Allott
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L29/1087 , H01L29/0692 , H01L29/41758 , H01L29/78
摘要： An RF MOS transistor having improved AC output conductance and AC output capacitance includes parallel interdigitated source and drain regions separated by channel regions and overlying gates. Grounded tap regions contacting an underlying well are placed contiguous to source regions and reduce distributed backgate resistance, lower backgate channel modulation, and lower output conductance.
摘要翻译：具有改善的AC输出电导和AC输出电容的RF MOS晶体管包括由沟道区域和上覆栅极隔开的并行交错的源极和漏极区域。接触下层阱的接地抽头区域邻近源极区域放置，并减少分布式背栅电阻，较低的后栅沟道调制和较低的输出电导。

7. 发明授权

US5945734A Wire-bond free input/output interface for GaAs ICs with means of determining known good die 失效
标题翻译：用于GaAs IC的无引线自由输入/输出接口，具有确定已知的良好裸片的方法
公开(公告)号：US5945734A
公开(公告)日：1999-08-31
申请号：US934391
申请日：1997-09-19
申请人： Thomas G. McKay
发明人： Thomas G. McKay
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/338 , H01L21/60 , H01L23/28 , H01L23/48 , H01L23/66 , H01L29/812 , H01L23/22 , H01L23/24
CPC分类号： H01L23/66 , H01L23/481 , H01L2224/16 , H01L2924/01078 , H01L2924/3011
摘要： An MMIC includes I/O pads on the back side coupled to active circuit structures on the front side by standard through-the-substrate vias. The front side is covered by a passivation layer and the back side I/O pads facilitate testing utilizing standard wafer probing equipment. The back side I/O pads are formed utilizing standard MMIC process technology.
摘要翻译： MMIC包括背面的I / O焊盘，其通过标准通孔通孔耦合到正面的有源电路结构。前侧被钝化层覆盖，背面I / O焊盘便于使用标准晶圆探测设备进行测试。使用标准MMIC工艺技术形成背面I / O焊盘。

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