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1. 发明申请

US20100052016A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE OF SAME 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20100052016A1
公开(公告)日：2010-03-04
申请号：US12200188
申请日：2008-08-28
申请人： Stewart Edward HOOPER , Jonathan Heffernan
发明人： Stewart Edward HOOPER , Jonathan Heffernan
IPC分类号： H01L29/205 , H01L21/205
CPC分类号： H01L21/02461 , C30B23/02 , C30B25/02 , C30B29/40 , C30B29/403 , C30B33/02 , H01L21/02381 , H01L21/02458 , H01L21/02463 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L29/2003
摘要： A method of manufacturing a nitride semiconductor structure includes disposing a semiconductor substrate in a molecular beam epitaxy reactor; growing a wetting layer comprising AlxInyGa(1−(x/y))As(0≦x+y≦1) or AlxInyGa(1−(x/y))P(0≦x+y≦1) on the substrate; in-situ annealing the wetting layer; growing a first AlGaInN layer on the wetting layer using plasma activated nitrogen as the source of nitrogen with an additional flux of phosphorous or arsenic; and growing a second AlGaInN layer on the first AlGaInN layer using ammonia as a source of nitrogen.
摘要翻译：制造氮化物半导体结构的方法包括将半导体衬底设置在分子束外延反应器中; 在衬底上生长包含Al x In y Ga（1-（x / y））As（0＆amp; nE; x + y＆nlE; 1）或Al x In y Ga（1-（x / y））P（0和nlE; x + y和nlE; 1）原位退火润湿层; 使用等离子体活化氮作为氮源，再加入磷或砷的助熔剂，在润湿层上生长第一AlGaInN层; 以及使用氨作为氮源在所述第一AlGaInN层上生长第二AlGaInN层。

2. 发明申请

US20120025139A1 II-III-V COMPOUND SEMICONDUCTOR 审中-公开
标题翻译： II-III-V化合物半导体
公开(公告)号：US20120025139A1
公开(公告)日：2012-02-02
申请号：US13187644
申请日：2011-07-21
申请人： Peter Neil TAYLOR , Jonathan HEFFERNAN , Stewart Edward HOOPER , Tim Michael SMEETON
发明人： Peter Neil TAYLOR , Jonathan HEFFERNAN , Stewart Edward HOOPER , Tim Michael SMEETON
IPC分类号： C09K11/54 , C01B21/00
CPC分类号： C09K11/623 , C09K11/625 , C09K11/642 , H01L31/032
摘要： The present application provides a new composition of matter in the form of a new compound semiconductor family of the type group Zn-(II)-III-N, where III denotes one or more elements in Group III of the periodic table and (II) denotes one or more optional further elements in Group II of the periodic table. Members of this family include for example, ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN or ZnAlGaInN. This type of compound semiconductor material is not previously known in the prior art.The composition of the new Zn-(II)-III-N compound semiconductor material can be controlled in order to tailor its band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
摘要翻译：本申请提供了新型的Zn-（II）-III-N型化合物半导体族的物质组成，其中III表示周期表第III族中的一种或多种元素，（II）表示周期表第II族中的一个或多个任选的另外的元素。该族的成员包括例如ZnGaN，ZnInN，ZnInGaN，ZnAlN，ZnAlGaN，ZnAlInN或ZnAlGaInN。这种类型的化合物半导体材料在现有技术中不是先前已知的。可以控制新的Zn-（II）-III-N化合物半导体材料的组成以便调整其带隙和发光性能。证明了紫外 - 可见红外波长范围内的高效发光。本发明的产品可用作诸如太阳能电池，发光二极管，激光二极管以及用作LED和发光EL显示器的发光磷光体材料的光电器件的组成。

3. 发明申请

US20100065811A1 SINGLE PHOTON SOURCE WITH AllnN CURRENT INJECTION LAYER 审中-公开
标题翻译：单光子源与全电流注入层
公开(公告)号：US20100065811A1
公开(公告)日：2010-03-18
申请号：US12212729
申请日：2008-09-18
申请人： Mathieu Xavier SENES , Katherine Louise SMITH , Victoria Broadley , Stewart Edward HOOPER
发明人： Mathieu Xavier SENES , Katherine Louise SMITH , Victoria Broadley , Stewart Edward HOOPER
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/221 , H01S5/3412
摘要： A photon source includes a substrate, an active region formed above the substrate, and a pair of electrodes configured to provide an injection current which passes through the active region. The active region includes a quantum dot layer including one or more AlyGaxIn1-x-yN quantum dots, where 0≦x≦1 and 0≦y≦
摘要翻译：光子源包括衬底，形成在衬底上方的有源区和配置成提供穿过有源区的注入电流的一对电极。有源区包括一个包含一个或多个AlyGaxIn1-x-yN量子点的量子点层，其中0和nlE; x和nlE; 1和0＆nlE; y＆nlE; <1，以及与量子点层相邻的AlInN电流限制层。电流限制层具有限定用于注入电流流过该对电极之间的有源区域的低电阻路径的孔径。量子点层在投影到量子点层上时在孔内包括少于50个量子点。

4. 发明申请

US20090179191A1 AlInGaN LIGHT-EMITTING DEVICE 有权
标题翻译： AlInGaN发光器件
公开(公告)号：US20090179191A1
公开(公告)日：2009-07-16
申请号：US12354317
申请日：2009-01-15
申请人： Katherine Louise SMITH , Mathieu Xavier SENES , Tim Michael SMEETON , Stewart Edward HOOPER
发明人： Katherine Louise SMITH , Mathieu Xavier SENES , Tim Michael SMEETON , Stewart Edward HOOPER
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/08 , H01L33/32 , H01S5/0213 , H01S5/341 , H01S5/3412
摘要： A semiconductor light-emitting device fabricated in the (Al,Ga,In)N materials system has an active region for light emission (3) comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer (6) is provided on a substrate side of the active region. This increases the optical output of the light-emitting device. This increased optical output is believed to result from the AlxGa1-xN layer serving, in use, to promote the injection of carriers into the active region.
摘要翻译：在（Al，Ga，In）N材料体系中制造的半导体发光器件具有包含InGaN量子点或InGaN量子线的用于发光的有源区（3）。在有源区的基板侧设置AlGaN层（6）。这增加了发光装置的光输出。这种增加的光输出被认为是由AlxGa1-xN层在使用中产生的，以促进载流子注入有源区。

5. 发明申请

US20130015362A1 FLUID PURIFICATION AND SENSOR SYSTEM 审中-公开
标题翻译：流体净化和传感器系统
公开(公告)号：US20130015362A1
公开(公告)日：2013-01-17
申请号：US13180971
申请日：2011-07-12
申请人： Stewart Edward HOOPER , Tim Michael SMEETON , Allan EVANS
发明人： Stewart Edward HOOPER , Tim Michael SMEETON , Allan EVANS
IPC分类号： G01J1/42 , G01J1/58
CPC分类号： C02F1/32 , C02F1/30 , C02F2201/3222 , C02F2201/3226 , C02F2201/326 , G01N15/1434 , G01N15/147 , G01N2015/1438
摘要： A system and method are disclosed for the simultaneous optical disinfection and detection of biological particles in a flowing fluid, such as air or water, medium. A light source for irradiating the flowing medium is a dual wavelength laser element simultaneously emitting a visible laser beam and an ultraviolet laser beam. In particular, a laser diode may generate a first visible laser light beam, and a second ultraviolet laser light beam may be generated by passing the first laser light beam through a frequency doubling crystal. Optical detectors measure scattering, fluorescence and/or transmission of the laser light beams from the air or water medium to determine the presence of biological particles in real-time.
摘要翻译：公开了用于同时光学消毒和检测流动流体（例如空气或水，介质）中的生物颗粒的系统和方法。用于照射流动介质的光源是同时发射可见激光束和紫外激光束的双波长激光元件。特别地，激光二极管可以产生第一可见激光束，并且可以通过使第一激光束通过倍频晶体来产生第二紫外激光束。光学检测器测量来自空气或水介质的激光束的散射，荧光和/或透射，以实时确定生物颗粒的存在。

6. 发明申请

US20120187540A1 METAMORPHIC SUBSTRATE SYSTEM, METHOD OF MANUFACTURE OF SAME, AND III-NITRIDES SEMICONDUCTOR DEVICE 审中-公开
标题翻译：元素基板系统，其制造方法和III型氮化物半导体器件
公开(公告)号：US20120187540A1
公开(公告)日：2012-07-26
申请号：US13348724
申请日：2012-01-12
申请人： Stewart Edward HOOPER , Valerie BERRYMAN-BOUSQUET
发明人： Stewart Edward HOOPER , Valerie BERRYMAN-BOUSQUET
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/0254 , H01L33/0066
摘要： A laminated substrate system containing a metamorphic transition region (2) made from multiple and alternating layers of AlxGa1-xN (5) and the supporting substrate material (4) (or a material having the same general chemical composition thereto). A III-Nitrides semiconductor device (2) with a low dislocation density is formed on top of the laminated substrate system. The multiple layers (4,5) of the metamorphic transition region form a superlattice structure whose lattice constant and structure changes along its growth direction from that of the supporting substrate (1) (in the vicinity of the supporting substrate) to that of the device (3) (in the vicinity of the device).
摘要翻译：包含由Al x Ga 1-x N（5）和支撑基材（4）的多层交替层（或与其相同的一般化学组成的材料）制成的变质过渡区（2）的层压基板系统。在层叠基板系统的顶部形成具有低位错密度的III-氮化物半导体器件（2）。变质过渡区的多层（4,5）形成超晶格结构，其晶格常数和结构沿其生长方向从支撑衬底（1）（在支撑衬底附近）的方向改变为器件的（3）（在设备附近）。

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