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    • 2. 发明申请
    • II-III-V COMPOUND SEMICONDUCTOR
    • II-III-V化合物半导体
    • US20120025139A1
    • 2012-02-02
    • US13187644
    • 2011-07-21
    • Peter Neil TAYLORJonathan HEFFERNANStewart Edward HOOPERTim Michael SMEETON
    • Peter Neil TAYLORJonathan HEFFERNANStewart Edward HOOPERTim Michael SMEETON
    • C09K11/54C01B21/00
    • C09K11/623C09K11/625C09K11/642H01L31/032
    • The present application provides a new composition of matter in the form of a new compound semiconductor family of the type group Zn-(II)-III-N, where III denotes one or more elements in Group III of the periodic table and (II) denotes one or more optional further elements in Group II of the periodic table. Members of this family include for example, ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN or ZnAlGaInN. This type of compound semiconductor material is not previously known in the prior art.The composition of the new Zn-(II)-III-N compound semiconductor material can be controlled in order to tailor its band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
    • 本申请提供了新型的Zn-(II)-III-N型化合物半导体族的物质组成,其中III表示周期表第III族中的一种或多种元素,(II) 表示周期表第II族中的一个或多个任选的另外的元素。 该族的成员包括例如ZnGaN,ZnInN,ZnInGaN,ZnAlN,ZnAlGaN,ZnAlInN或ZnAlGaInN。 这种类型的化合物半导体材料在现有技术中不是先前已知的。 可以控制新的Zn-(II)-III-N化合物半导体材料的组成以便调整其带隙和发光性能。 证明了紫外 - 可见红外波长范围内的高效发光。 本发明的产品可用作诸如太阳能电池,发光二极管,激光二极管以及用作LED和发光EL显示器的发光磷光体材料的光电器件的组成。