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1. 发明申请

US20120279864A1 PROCESS FOR ELECTROPLATING METALS INTO MICROSCOPIC RECESSED FEATURES 审中-公开
标题翻译：将金属电镀到微观结构特征的工艺
公开(公告)号：US20120279864A1
公开(公告)日：2012-11-08
申请号：US13286103
申请日：2011-10-31
申请人： Steven T. Mayer , Vijay Bhaskaran , Evan E. Patton , Robert L. Jackson , Jonathan Reid
发明人： Steven T. Mayer , Vijay Bhaskaran , Evan E. Patton , Robert L. Jackson , Jonathan Reid
IPC分类号： C25D5/18 , C25B15/02
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译：描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。

2. 发明授权

US06946065B1 Process for electroplating metal into microscopic recessed features 有权
标题翻译：将金属电镀成微观凹陷特征的工艺
公开(公告)号：US06946065B1
公开(公告)日：2005-09-20
申请号：US09716016
申请日：2000-11-16
申请人： Steven T. Mayer , Vijay Bhaskaran , Evan E. Patton , Robert L. Jackson , Jonathan Reid
发明人： Steven T. Mayer , Vijay Bhaskaran , Evan E. Patton , Robert L. Jackson , Jonathan Reid
IPC分类号： C25D3/38 , C25D5/18 , H05K3/42 , H01L21/768
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译：描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。

3. 发明授权

US08048280B2 Process for electroplating metals into microscopic recessed features 有权
标题翻译：将金属电镀成微观凹陷特征的工艺
公开(公告)号：US08048280B2
公开(公告)日：2011-11-01
申请号：US11228712
申请日：2005-09-16
申请人： Steven T. Mayer , Vijay Bhaskaran , Evan E. Patton , Robert L. Jackson , Jonathan Reid
发明人： Steven T. Mayer , Vijay Bhaskaran , Evan E. Patton , Robert L. Jackson , Jonathan Reid
IPC分类号： C25D5/18 , C25D7/12 , H01L21/768
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译：描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。

4. 发明申请

US20060011483A1 Process for electroplating metals into microscopic recessed features 有权
标题翻译：将金属电镀成微观凹陷特征的工艺
公开(公告)号：US20060011483A1
公开(公告)日：2006-01-19
申请号：US11228712
申请日：2005-09-16
申请人： Steven Mayer , Vijay Bhaskaran , Evan Patton , Robert Jackson , Jonathan Reid
发明人： Steven Mayer , Vijay Bhaskaran , Evan Patton , Robert Jackson , Jonathan Reid
IPC分类号： C25D5/02
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译：描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。

5. 发明授权

US06551483B1 Method for potential controlled electroplating of fine patterns on semiconductor wafers 有权
标题翻译：在半导体晶片上精细图案的电位控制电镀方法
公开(公告)号：US06551483B1
公开(公告)日：2003-04-22
申请号：US09853959
申请日：2001-05-10
申请人： Steven T. Mayer , Jonathan Reid , Robert Contolini
发明人： Steven T. Mayer , Jonathan Reid , Robert Contolini
IPC分类号： C25D2112
CPC分类号： H01L21/2885 , C25D5/18 , C25D7/123
摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.
摘要翻译：控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。

6. 发明授权

US09045841B1 Control of electrolyte composition in a copper electroplating apparatus 有权
标题翻译：铜电镀设备中电解质组成的控制
公开(公告)号：US09045841B1
公开(公告)日：2015-06-02
申请号：US13359343
申请日：2012-01-26
申请人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
发明人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
IPC分类号： C25D3/02 , C25D21/14
CPC分类号： C25D21/14 , C25D17/001 , C25D17/002
摘要： In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.
摘要翻译：在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。因此，沉淀诱导的阳极钝化可以最小化。

7. 发明授权

US07211175B1 Method and apparatus for potential controlled electroplating of fine patterns on semiconductor wafers 有权
标题翻译：用于在半导体晶片上精细图案的电位控制电镀的方法和装置
公开(公告)号：US07211175B1
公开(公告)日：2007-05-01
申请号：US10365577
申请日：2003-02-11
申请人： Steven T. Mayer , Jonathan Reid , Robert Contolini
发明人： Steven T. Mayer , Jonathan Reid , Robert Contolini
IPC分类号： C25B15/02 , C25D17/00
CPC分类号： C25D17/001 , C25D17/005 , C25D21/12 , H01L21/2885 , H01L21/76877
摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.
摘要翻译：控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。

8. 发明授权

US08128791B1 Control of electrolyte composition in a copper electroplating apparatus 有权
标题翻译：铜电镀设备中电解质组成的控制
公开(公告)号：US08128791B1
公开(公告)日：2012-03-06
申请号：US11590413
申请日：2006-10-30
申请人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
发明人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
IPC分类号： C25D21/14 , C25D3/38
CPC分类号： C25D21/14 , C25D17/001 , C25D17/002
摘要： In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.
摘要翻译：在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。因此，沉淀诱导的阳极钝化可以最小化。

9. 发明授权

US06562204B1 Apparatus for potential controlled electroplating of fine patterns on semiconductor wafers 有权
标题翻译：用于在半导体晶片上进行精细图案的电位控制电镀的装置
公开(公告)号：US06562204B1
公开(公告)日：2003-05-13
申请号：US09854230
申请日：2001-05-10
申请人： Steven T. Mayer , Jonathan Reid , Robert Contolini
发明人： Steven T. Mayer , Jonathan Reid , Robert Contolini
IPC分类号： B23H302
CPC分类号： H01L21/2885 , C25D5/18 , C25D7/123
摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.
摘要翻译：控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。

10. 发明授权

US08475644B2 Method and apparatus for electroplating 有权
公开(公告)号：US08475644B2
公开(公告)日：2013-07-02
申请号：US12606030
申请日：2009-10-26
申请人： Steven Mayer , Jingbin Feng , Zhian He , Jonathan Reid , Seshasayee Varadarajan
发明人： Steven Mayer , Jingbin Feng , Zhian He , Jonathan Reid , Seshasayee Varadarajan
IPC分类号： C25D21/12 , C25D7/12 , C25D3/38
CPC分类号： C25D17/12 , C23C18/1601 , C25D5/02 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/008 , C25D21/12 , C25D21/14 , C25F3/30 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/6715 , H01L21/76873
摘要： An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

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