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    • 4. 发明授权
    • Passive component integrated circuit chip
    • 无源元件集成电路芯片
    • US5923077A
    • 1999-07-13
    • US22102
    • 1998-02-11
    • John R. ChaseBruce Leon Jeppesen
    • John R. ChaseBruce Leon Jeppesen
    • H01G4/40H01L27/06H03H1/02H03H7/06H01L29/00H01L23/48H01L23/52
    • H01G4/40H01L27/0688
    • A passive component integrated circuit chip formed on an insulative substrate includes a first conductive metallic layer on a major surface of the substrate; a layer of dielectric material on top of the first conductive metallic layer; a second conductive metallic layer on top of the formation of dielectric material; a layer of insulative material on top of the layer of dielectric material and on and around the second conductive metallic layer, but not completely covering the second conductive metallic layer; a conductive via in contact with a portion of the second conductive metallic layer left uncovered by the layer of insulative material; a resistive layer on top of the layer of insulative material and in contact with the conductive via; a conductive contact in contact with the resistive layer; and a passivation layer on top of the resistive layer so as to provide a seal between the resistive layer and the conductive contact. Conductive end terminations are advantageously formed on the ends of the substrate to terminate selected conductive contacts and/or conductive metallic layers.
    • 形成在绝缘基板上的无源部件集成电路芯片包括在基板的主表面上的第一导电金属层; 在所述第一导电金属层的顶部上的介电材料层; 在介电材料形成的顶部上的第二导电金属层; 绝缘材料层,位于第二导电金属层上并且在第二导电金属层周围,但不完全覆盖第二导电金属层; 与由绝缘材料层未覆盖的第二导电金属层的一部分接触的导电通孔; 在绝缘材料层顶部并与导电通孔接触的电阻层; 与电阻层接触的导电触点; 以及在电阻层的顶部上的钝化层,以便在电阻层和导电触点之间提供密封。 有利地,在基底的端部上形成导电末端以终止所选择的导电接触和/或导电金属层。