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1. 发明申请

US20130119528A1 STACKED SEMICONDUCTOR DIE ASSEMBLIES WITH MULTIPLE THERMAL PATHS AND ASSOCIATED SYSTEMS AND METHODS 有权
公开(公告)号：US20130119528A1
公开(公告)日：2013-05-16
申请号：US13613540
申请日：2012-09-13
申请人： Steven K. Groothuis , Jian Li , Haojun Zhang , Paul A. Silvestri , Xiao Li , Shijian Luo , Luke G. England , Brent Keeth , Jaspreet Gandhi
发明人： Steven K. Groothuis , Jian Li , Haojun Zhang , Paul A. Silvestri , Xiao Li , Shijian Luo , Luke G. England , Brent Keeth , Jaspreet Gandhi
IPC分类号： H01L23/48 , H01L21/50
CPC分类号： H01L23/36 , H01L23/3675 , H01L23/3677 , H01L23/3736 , H01L23/42 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2224/16145 , H01L2224/16227 , H01L2224/17181 , H01L2224/73204 , H01L2225/06513 , H01L2225/06544 , H01L2225/06589 , H01L2924/15311
摘要： Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.

2. 发明授权

US09153520B2 Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods 有权
标题翻译：具有多个热路径和相关系统和方法的堆叠式半导体管芯组件
公开(公告)号：US09153520B2
公开(公告)日：2015-10-06
申请号：US13613540
申请日：2012-09-13
申请人： Steven K. Groothuis , Jian Li , Haojun Zhang , Paul A. Silvestri , Xiao Li , Shijian Luo , Luke G. England , Brent Keeth , Jaspreet Gandhi
发明人： Steven K. Groothuis , Jian Li , Haojun Zhang , Paul A. Silvestri , Xiao Li , Shijian Luo , Luke G. England , Brent Keeth , Jaspreet Gandhi
IPC分类号： H01L23/36 , H01L23/367 , H01L23/373 , H01L23/42 , H01L25/065 , H01L25/18
CPC分类号： H01L23/36 , H01L23/3675 , H01L23/3677 , H01L23/3736 , H01L23/42 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2224/16145 , H01L2224/16227 , H01L2224/17181 , H01L2224/73204 , H01L2225/06513 , H01L2225/06544 , H01L2225/06589 , H01L2924/15311
摘要： Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.
摘要翻译：本文公开了具有多个热路径和相关系统和方法的堆叠的半导体管芯组件。在一个实施例中，半导体管芯组件可以包括布置在堆叠中的多个第一半导体管芯和承载第一半导体管芯的第二半导体管芯。第二半导体管芯可以包括横向向外延伸超过第一半导体管芯的至少一侧的周边部分。半导体管芯组件还可以包括在第二半导体管芯的周边部分处的热传递特征。第一半导体管芯可以限定第一热路径，并且热转移特征可以限定与第一半导体管芯分离的第二热路径。

3. 发明授权

US08492242B2 Dry flux bonding device and method 有权
标题翻译：干焊剂结合装置及方法
公开(公告)号：US08492242B2
公开(公告)日：2013-07-23
申请号：US12787187
申请日：2010-05-25
申请人： Owen Fay , Xiao Li , Josh Woodland , Shijian Luo , Jaspreet Gandhi , Te-Sung Wu
发明人： Owen Fay , Xiao Li , Josh Woodland , Shijian Luo , Jaspreet Gandhi , Te-Sung Wu
IPC分类号： H01L33/48 , H01L23/12 , B23K1/20
CPC分类号： H01L33/62 , H01L24/29 , H01L24/83 , H01L24/94 , H01L33/0079 , H01L33/0095 , H01L2224/83193 , H01L2224/8381 , H01L2224/83825 , H01L2224/94 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/14 , H01L2224/83 , H01L2924/00
摘要： Methods of forming devices, including LED devices, are described. The devices may include fluorinated compound layers. The methods described may utilize a plasma treatment to form the fluorinated compound layers. The methods described may operate to produce an intermetallic layer that bonds two substrates such as semiconductor wafers together in a relatively efficient and inexpensive manner.
摘要翻译：描述了包括LED器件在内的器件形成方法。装置可以包括氟化化合物层。所述的方法可以利用等离子体处理来形成氟化化合物层。所描述的方法可以操作以产生金属间化合物层，其以相对有效和廉价的方式将诸如半导体晶片的两个基板结合在一起。

4. 发明申请

US20110291146A1 DRY FLUX BONDING DEVICE AND METHOD 有权
标题翻译：干流焊接装置和方法
公开(公告)号：US20110291146A1
公开(公告)日：2011-12-01
申请号：US12787187
申请日：2010-05-25
申请人： Owen Fay , Xiao Li , Josh Woodland , Shijian Luo , Jaspreet Gandhi , Te-Sung Wu
发明人： Owen Fay , Xiao Li , Josh Woodland , Shijian Luo , Jaspreet Gandhi , Te-Sung Wu
IPC分类号： H01L33/62 , H01L33/48 , B23K31/02
CPC分类号： H01L33/62 , H01L24/29 , H01L24/83 , H01L24/94 , H01L33/0079 , H01L33/0095 , H01L2224/83193 , H01L2224/8381 , H01L2224/83825 , H01L2224/94 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/14 , H01L2224/83 , H01L2924/00
摘要： Methods of forming devices, including LED devices, are described. The devices may include fluorinated compound layers. The methods described may utilize a plasma treatment to form the fluorinated compound layers. The methods described may operate to produce an intermetallic layer that bonds two substrates such as semiconductor wafers together in a relatively efficient and inexpensive manner.
摘要翻译：描述了包括LED器件在内的器件形成方法。装置可以包括氟化化合物层。所述的方法可以利用等离子体处理来形成氟化化合物层。所描述的方法可以操作以产生金属间化合物层，其以相对有效和廉价的方式将诸如半导体晶片的两个基板结合在一起。

5. 发明授权

US08436386B2 Solid state lighting devices having side reflectivity and associated methods of manufacture 有权
标题翻译：具有侧反射率和相关制造方法的固态照明装置
公开(公告)号：US08436386B2
公开(公告)日：2013-05-07
申请号：US13152572
申请日：2011-06-03
申请人： Jaspreet Gandhi , Tongbi Jiang
发明人： Jaspreet Gandhi , Tongbi Jiang
IPC分类号： H01L33/60 , H01L33/48
CPC分类号： H01L33/10 , H01L33/0079 , H01L33/0095 , H01L33/46
摘要： Solid state lighting devices having side reflectivity and associated methods of manufacturing are disclosed herein. In one embodiment, a method of forming a solid state lighting device includes attaching a solid state emitter to a support substrate, mounting the solid state emitter and support substrate to a temporary carrier, and cutting kerfs through the solid state emitter and the substrate to separate individual dies. The solid state emitter can have a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The individual dies can have sidewalls that expose the first semiconductor material, active region and second semiconductor material. The method can further include applying a reflective material into the kerfs and along the sidewalls of the individual dies.
摘要翻译：本文公开了具有侧反射率和相关制造方法的固态照明装置。在一个实施例中，形成固态照明装置的方法包括将固态发射器附接到支撑衬底，将固态发射器和支撑衬底安装到临时载体上，以及通过固态发射器和衬底切割缝隙以分离个人死亡固态发射器可以具有第一半导体材料，第二半导体材料和第一和第二半导体材料之间的有源区。各个管芯可以具有露出第一半导体材料，有源区和第二半导体材料的侧壁。该方法还可以包括将反射材料施加到切口中并且沿着各个模具的侧壁。

6. 发明申请

US20120305957A1 SOLID STATE LIGHTING DEVICES HAVING SIDE REFLECTIVITY AND ASSOCIATED METHODS OF MANUFACTURE 有权
标题翻译：具有侧面反射性的固态照明装置及相关的制造方法
公开(公告)号：US20120305957A1
公开(公告)日：2012-12-06
申请号：US13152572
申请日：2011-06-03
申请人： Jaspreet Gandhi , Tongbi Jiang
发明人： Jaspreet Gandhi , Tongbi Jiang
IPC分类号： H01L33/60 , H01L33/48
CPC分类号： H01L33/10 , H01L33/0079 , H01L33/0095 , H01L33/46
摘要： Solid state lighting devices having side reflectivity and associated methods of manufacturing are disclosed herein. In one embodiment, a method of forming a solid state lighting device includes attaching a solid state emitter to a support substrate, mounting the solid state emitter and support substrate to a temporary carrier, and cutting kerfs through the solid state emitter and the substrate to separate individual dies. The solid state emitter can have a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The individual dies can have sidewalls that expose the first semiconductor material, active region and second semiconductor material. The method can further include applying a reflective material into the kerfs and along the sidewalls of the individual dies.
摘要翻译：本文公开了具有侧反射率和相关制造方法的固态照明装置。在一个实施例中，形成固态照明装置的方法包括将固态发射器附接到支撑衬底，将固态发射器和支撑衬底安装到临时载体上，以及通过固态发射器和衬底切割缝隙以分离个人死亡固态发射器可以具有第一半导体材料，第二半导体材料和第一和第二半导体材料之间的有源区。各个管芯可以具有露出第一半导体材料，有源区和第二半导体材料的侧壁。该方法还可以包括将反射材料施加到切口中并且沿着各个模具的侧壁。

7. 发明申请

US20070056469A1 Silane coating compositions and methods of use thereof 有权
标题翻译：硅烷涂料组合物及其使用方法
公开(公告)号：US20070056469A1
公开(公告)日：2007-03-15
申请号：US11366284
申请日：2006-03-02
申请人： William van Ooij , Karthik Suryanarayanan , Jaspreet Gandhi , Naveen Simhadri , Chetan Shivane , Matthew Stacy , Danqing Zhu
发明人： William van Ooij , Karthik Suryanarayanan , Jaspreet Gandhi , Naveen Simhadri , Chetan Shivane , Matthew Stacy , Danqing Zhu
IPC分类号： B60C1/00 , C07D295/18
CPC分类号： C09D4/00 , C09D5/086 , C09D183/04 , C09D183/08 , C23C2222/20 , C08G77/04 , C08G77/28 , C08G77/26 , C08L2666/02
摘要： A method of treating a substrate, such as a metal surface, by application of a silane coating composition containing at least one water-soluble or dispersible silane and a polymeric resin, which may be provided as a water-based dispersion of polymeric resin, the polymeric resin being present in an amount less than 10% by weight of the composition to slow the rate of corrosion of the metal surface and/or to promote adhesion of rubber thereto. The at least one silane can include a bis-amino silane, a vinyl silane, a bis-sulfur silane, or mixtures thereof and the polymeric resin may include an epoxy resin, acrylate resin, polyurethane resin, novolac resin, or mixtures thereof. The silane coating compositions may be either water or solvent based.
摘要翻译：通过应用含有至少一种水溶性或可分散的硅烷和聚合物树脂的硅烷涂料组合物来处理基材例如金属表面的方法，其可以作为聚合物树脂的水基分散体提供，聚合物树脂的存在量小于组合物的10重量％，以减缓金属表面的腐蚀速率和/或促进橡胶与其粘合。所述至少一种硅烷可包括双氨基硅烷，乙烯基硅烷，双硫硅烷或其混合物，聚合物树脂可包括环氧树脂，丙烯酸酯树脂，聚氨酯树脂，酚醛清漆树脂或其混合物。硅烷涂料组合物可以是水或溶剂型。

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