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    • 1. 发明申请
    • PHASE CHANGE MEMORY SYNAPTRONIC CIRCUIT FOR SPIKING COMPUTATION, ASSOCIATION AND RECALL
    • 相位改变记忆同步电路,用于SPIKING计算,协调和调用
    • US20120084240A1
    • 2012-04-05
    • US12895710
    • 2010-09-30
    • Steven K. EsserDharmendra S. ModhaAnthony NdirangoBipin Rajendran
    • Steven K. EsserDharmendra S. ModhaAnthony NdirangoBipin Rajendran
    • G06N3/04
    • G06N3/063
    • Embodiments of the invention are directed to producing spike-timing dependent plasticity using electronic neurons for computation, and pattern matching tasks such as association and recall. In response to an electronic neuron spiking, a spiking signal is sent from the electronic neuron to each axon driver and each dendrite driver connected to the spiking electronic neuron. Each axon driver receiving the spiking signal sends an axonal signal from the axon driver to a variable state resistor. Each dendrite driver receiving the spiking signal sends a dendritic signal from the dendrite driver to the variable state resistor, wherein the variable state resistor couples the axon driver and the dendrite driver. The combination of the axonal and dendritic signals is capable of increasing or decreasing conductance of the variable state resistor.
    • 本发明的实施例涉及使用用于计算的电子神经元和诸如关联和召回的模式匹配任务来产生尖峰时序相关的可塑性。 响应于电子神经元峰值,从电子神经元发送尖峰信号到每个轴突驱动器,并且每个枝晶驱动器连接到尖峰电子神经元。 接收尖峰信号的每个轴突驱动器将轴突信号从轴突驱动器发送到可变状态电阻器。 接收尖峰信号的每个枝晶驱动器将枝晶信号从枝晶驱动器发送到可变状态电阻器,其中可变状态电阻器耦合轴突驱动器和枝晶驱动器。 轴突和树突状信号的组合能够增加或降低可变状态电阻的电导。