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1. 发明申请

US20050124146A1 Method of fabricating strained Si SOI wafers 失效
公开(公告)号：US20050124146A1
公开(公告)日：2005-06-09
申请号：US10728519
申请日：2003-12-05
申请人： Steven Bedell , Guy Cohen , Huajie Chen
发明人： Steven Bedell , Guy Cohen , Huajie Chen
IPC分类号： H01L21/20 , H01L21/324 , H01L21/762 , H01L21/425
CPC分类号： H01L21/324
摘要： A method of fabricating a strained semiconductor-on-insulator (SSOI) substrate in which the strained semiconductor is a thin semiconductor layer having a thickness of less than 50 nm that is located directly atop an insulator layer of a preformed silicon-on-insulator substrate is provided. Wafer bonding is not employed in forming the SSOI substrate of the present invention.

2. 发明授权

US09363271B1 Method and system of reserving and using an access channel 有权
标题翻译：保留和使用接入信道的方法和系统
公开(公告)号：US09363271B1
公开(公告)日：2016-06-07
申请号：US13458727
申请日：2012-04-27
申请人： Dante Puliatti , Samuel Schanker , Steven Bedell , Michael Kovalcik
发明人： Dante Puliatti , Samuel Schanker , Steven Bedell , Michael Kovalcik
IPC分类号： H04W36/00 , H04L29/06
CPC分类号： H04L63/105 , H04W12/08 , H04W28/0226 , H04W28/0284 , H04W48/06 , H04W48/08
摘要： A radio access network (RAN) may be providing, in a coverage area, at least two access channels that are available for use by any wireless communication devices (WCD). Thereafter, the RAN may detect that a threshold load exists in the coverage area and responsively reserve one of the access channels for use only by authorized WCDs. In turn, authorized WCDs in the coverage area may be configured to use the reserved access channel to transmit access probes to the RAN, while unauthorized WCDs in the coverage area may be configured to use only a generally-available access channel to transmit access probes to the RAN. In this way, the disclosed methods and corresponding devices may limit the occupancy on the reserved access channel and thereby increase the likelihood that authorized WCDs can successfully access the RAN over the reserved access channel when the coverage area becomes congested.
摘要翻译：无线电接入网络（RAN）可以在覆盖区域中提供可由任何无线通信设备（WCD）使用的至少两个接入信道。此后，RAN可以检测到覆盖区域中存在阈值负载，并且响应地预留一个接入信道，以供授权的WCD使用。反过来，覆盖区域中的授权WCD可以被配置为使用保留的接入信道来将接入探测发送到RAN，而覆盖区域中的未经授权的WCD可以被配置为仅使用通常可用的接入信道来发射接入探测到 RAN。以这种方式，所公开的方法和相应的设备可以限制预留接入信道上的占用，从而增加当覆盖区域变得拥塞时，授权的WCD可以在保留的接入信道上成功地接入RAN的可能性。

3. 发明申请

US20050145954A1 STRUCTURES AND METHODS FOR MAKING STRAINED MOSFETS 有权
标题翻译：制造应变MOSFET的结构和方法
公开(公告)号：US20050145954A1
公开(公告)日：2005-07-07
申请号：US10707690
申请日：2004-01-05
申请人： Huilong Zhu , Steven Bedell , Bruce Doris , Ying Zhang
发明人： Huilong Zhu , Steven Bedell , Bruce Doris , Ying Zhang
IPC分类号： H01L21/20 , H01L21/336 , H01L29/76 , H01L29/78 , H01L29/786 , H01L29/94 , H01L31/062
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/7842 , H01L29/78687
摘要： A method and device providing a strained Si film with reduced defects is provided, where the strained Si film forms a fin vertically oriented on a surface of a non-conductive substrate. The strained Si film or fin may form a semiconductor channel having relatively small dimensions while also having few defects. The strained Si fin is formed by growing Si on the side of a relaxed SiGe block. A dielectric gate, such as, for example, an oxide, a high “k” material, or a combination of the two, may be formed on a surface of the strained Si film. Additionally, without substantially affecting the stress in the strained Si film, the relaxed SiGe block may be removed to allow a second gate oxide to be formed on the surface previously occupied by the relaxed SiGe block. Accordingly, a semiconductor device having a strained Si fin vertically oriented on a non-conductive substrate may be formed where the strained Si film is oriented such that it may form a channel of small dimensions allowing access to both sides and top in order to from single gate, double gate, or more gate MOSFETs and finFETs with a channel having a reduced number of defects and/or reduced dimensions.
摘要翻译：提供了提供具有减小的缺陷的应变Si膜的方法和装置，其中应变Si膜在非导电基板的表面上形成垂直取向的翅片。应变Si膜或翅片可以形成具有相对较小尺寸的半导体通道，同时也具有很少的缺陷。应变Si翅片通过在弛豫的SiGe块的一侧生长Si而形成。可以在应变Si膜的表面上形成诸如氧化物，高“k”材料或两者的组合的电介质栅极。另外，在基本上不影响应变Si膜中的应力的情况下，可以去除弛豫的SiGe块，以允许在松弛的SiGe块先前占据的表面上形成第二栅极氧化物。因此，可以形成具有垂直取向在非导电衬底上的应变Si鳍片的半导体器件，其中应变Si膜被定向成使得其可以形成允许接近两侧和顶部的小尺寸的通道，以便从单个栅极，双栅极或更多栅极MOSFET和finFET，沟道具有减少的缺陷数量和/或减小的尺寸。

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