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    • 7. 发明授权
    • On-the-fly beam path error correction for memory link processing
    • 用于存储器链接处理的动态光束路径误差校正
    • US06816294B2
    • 2004-11-09
    • US10077691
    • 2002-02-15
    • Mark UnrathKelly BrulandHo Wai LoStephen Swaringen
    • Mark UnrathKelly BrulandHo Wai LoStephen Swaringen
    • G02B2608
    • G02B26/101B23K26/042B23K26/082G02B26/0816H01L23/5258H01L2924/0002H01L2924/00
    • Laser beam positioners (300, 340) employ a steering mirror (236, 306) that performs small-angle deflection of a laser beam (270) to compensate for cross-axis (110) settling errors of a positioner stage (302). A two-axis mirror is preferred because either axis of the positioner stages may be used for performing work. In one embodiment, the steering mirror is used for error correction only without necessarily requiring coordination with the positioner stage position commands. A fast steering mirror employing a flexure mechanism and piezoelectric actuators to tip and tilt the mirror is preferred in semiconductor link processing (“SLP”) applications. This invention compensates for cross-axis settling time, resulting in increased SLP system throughput and accuracy while simplifying complexity of the positioner stages because the steering mirror corrections relax the positioner stage servo driving requirements.
    • 激光束定位器(300,340)使用执行激光束(270)的小角度偏转以补偿定位器台(302)的横轴(110)沉降误差的转向镜(236,306)。 优选两轴镜,因为定位器台的任一轴可用于执行作业。 在一个实施例中,导向镜仅用于纠错,而不需要与定位器台位置命令协调。 在半导体连接处理(“SLP”)应用中,优选采用挠曲机构的快速转向镜和压电致动器来使倾斜反射镜。 本发明补偿横轴建立时间,从而提高了SLP系统的吞吐量和精度,同时简化了定位器台的复杂性,因为导向镜校正放松了定位器级的伺服驱动要求。
    • 8. 发明申请
    • Systems and methods for alignment of laser beam(s) for semiconductor link processing
    • 用于半导体连接处理的激光束对准的系统和方法
    • US20070020785A1
    • 2007-01-25
    • US11481562
    • 2006-07-05
    • Kelly BrulandStephen Swaringen
    • Kelly BrulandStephen Swaringen
    • H01L21/66
    • H01L23/5258B23K26/043G11C17/14G11C17/143H01L2924/0002H01L2924/00
    • A method makes a discrete adjustment to static alignment of a laser beam in a machine for selectively irradiating conductive links on or within a semiconductor substrate using the laser beam. The laser beam propagates along a beam path having an axis extending from a laser to a laser beam spot at a location on or within the semiconductor substrate. The method generates, based on at least one measured characteristic of the laser beam, at least one signal to control an adjustable optical element of the machine effecting the laser beam path. The method also sends said at least one signal to the adjustable optical element. The method then adjusts the adjustable optical element in response to said at least one signal so as to improve static alignment of the laser beam path axis.
    • 一种方法对机器中的激光束的静态对准进行离散调整,用于使用激光束选择性地照射半导体衬底上或内部的导电连接。 激光束沿着具有从激光器延伸到半导体衬底上或内部的位置的激光束点的光束路径传播。 该方法基于激光束的至少一个测量特性产生至少一个信号,以控制影响激光束路径的机器的可调节光学元件。 该方法还将所述至少一个信号发送到可调光学元件。 该方法然后响应于所述至少一个信号调整可调光学元件,以改善激光束路径轴线的静态对准。
    • 9. 发明申请
    • Semiconductor structure processing using multiple laterally spaced laser beam spots with on-axis offset
    • 使用具有轴上偏移的多个横向间隔开的激光束点的半导体结构处理
    • US20050281101A1
    • 2005-12-22
    • US11051265
    • 2005-02-04
    • Kelly BrulandBrian BairdHo LoStephen Swaringen
    • Kelly BrulandBrian BairdHo LoStephen Swaringen
    • G11C17/14G11C29/00H01L23/525
    • H01L23/5258B23K26/0613B23K26/0622B23K26/0624B23K26/082G11C17/14G11C17/143H01L2924/0002H01L2924/00
    • Methods and systems selectively irradiate electrically conductive structures on or within a semiconductor substrate using multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates a first laser beam along a first propagation path having a first axis incident at a first location on or within the semiconductor substrate at a given time. The first location is either on a structure in a first row of structures or between two adjacent structures in the first row. The method also propagates a second laser beam along a second propagation path having a second axis incident at a second location on or within the semiconductor substrate at the given time. The second location is either on a structure in a second row of structures or between two adjacent structures in the second row. The second row is distinct from the first row, and the second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the first and second laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the first and second rows with the first and second laser beams respectively.
    • 方法和系统使用多个激光束选择性地照射半导体衬底上或内部的导电结构。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 一种方法在给定时间沿着第一传播路径传播第一激光束,该第一传播路径具有入射在半导体衬底上或半导体衬底上的第一位置的第一轴。 第一个位置是在第一行结构中的结构上,或者在第一行的两个相邻结构之间。 该方法还在给定时间沿第二传播路径传播第二激光束,该第二传播路径具有入射在半导体衬底上或第二位置的第二轴。 第二位置在第二行结构中的结构上,或者位于第二行中的两个相邻结构之间。 第二行与第一行不同,第二位置在行的长度方向上偏离第一位置一定量。 该方法使第一和第二激光束轴相对于半导体衬底在行的长度方向基本一致地移动,以便分别用第一和第二激光束选择性地照射第一和第二行中的结构。