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    • 4. 发明申请
    • ORGANIC HYBRID PLANAR-NANOCRYSTALLINE BULK HETEROJUNCTIONS
    • 有机混合平面 - 纳米晶体块体异常
    • US20080116536A1
    • 2008-05-22
    • US11561448
    • 2006-11-20
    • Stephen R. ForrestFan Yang
    • Stephen R. ForrestFan Yang
    • H01L31/00H01L27/14
    • H01L27/302B82Y10/00H01L51/0046H01L51/0078H01L51/0086H01L51/4246H01L51/4253Y02E10/549Y02P70/521
    • A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.
    • 具有改进的混合平面体异质结的光敏光电子器件包括设置在阳极和阴极之间的多个光导材料。 光电导材料包括供体材料的第一连续层和受主材料的第二连续层。 供体材料或材料的第一网络从第一连续层延伸到第二连续层,提供用于将孔传导到第一连续层的连续路径。 受主材料或材料的第二网络从第二连续层向第一连续层延伸,提供用于将电子传导到第二连续层的连续路径。 第一网络和第二网络彼此交错。 至少另一种光电导材料分散在隔行网络之间。 这种其他光电导材料或材料具有不同于供体和受体材料的吸收光谱。
    • 5. 发明申请
    • Controlled growth of larger heterojunction interface area for organic photosensitive devices
    • 用于有机光敏器件的较大异质结界面的受控生长
    • US20080012005A1
    • 2008-01-17
    • US11483641
    • 2006-07-11
    • Fan YangStephen R. Forrest
    • Fan YangStephen R. Forrest
    • H01L51/00H01L21/00
    • H01L51/4246H01L51/0008H01L51/4253Y02E10/549Y02P70/521
    • An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.
    • 光电子器件和制造光敏光电子器件的方法包括在第一电极上沉积第一有机半导体材料以形成具有突起的连续的第一层,与第一电极相对的第一层的一侧的表面积至少为三倍 大于下面的横截面积; 将第二有机半导体材料直接沉积在第一层上以形成不连续的第二层,第一层的部分保持暴露; 将第三有机半导体材料直接沉积在第二层上以形成不连续的第三层,至少第二层的部分保持暴露; 在第三层上沉积第四有机半导体材料以形成连续的第四层,填充第一层,第二层和第三层中任何露出的间隙和凹陷; 以及在所述第四层上沉积第二电极,其中所述第一电极和所述第二电极中的至少一个是透明的,并且所述第一和第三有机半导体材料相对于第二和第四电极都是供体型或受体型 有机半导体材料,其它材料类型。
    • 6. 发明授权
    • Organic hybrid planar-nanocrystalline bulk heterojunctions
    • 有机混合平面 - 纳米晶体体异质结
    • US08415757B2
    • 2013-04-09
    • US13011255
    • 2011-01-21
    • Stephen R. ForrestFan Yang
    • Stephen R. ForrestFan Yang
    • H01L27/14
    • H01L27/302B82Y10/00H01L51/0046H01L51/0078H01L51/0086H01L51/4246H01L51/4253Y02E10/549Y02P70/521
    • A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.
    • 具有改进的混合平面体异质结的光敏光电子器件包括设置在阳极和阴极之间的多个光导材料。 光电导材料包括供体材料的第一连续层和受主材料的第二连续层。 供体材料或材料的第一网络从第一连续层延伸到第二连续层,提供用于将孔传导到第一连续层的连续路径。 受主材料或材料的第二网络从第二连续层向第一连续层延伸,提供用于将电子传导到第二连续层的连续路径。 第一网络和第二网络彼此交错。 至少另一种光电导材料分散在隔行网络之间。 这种其他光电导材料或材料具有不同于供体和受体材料的吸收光谱。
    • 7. 发明申请
    • CONTROLLED GROWTH OF LARGER HETEROJUNCTION INTERFACE AREA FOR ORGANIC PHOTOSENSITIVE DEVICES
    • 用于有机感光装置的大型异步接口界面的控制生长
    • US20100041177A1
    • 2010-02-18
    • US12581037
    • 2009-10-16
    • Fan YangStephen R. Forrest
    • Fan YangStephen R. Forrest
    • H01L51/48
    • H01L51/4246H01L51/0008H01L51/4253Y02E10/549Y02P70/521
    • An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.
    • 光电子器件和制造光敏光电子器件的方法包括在第一电极上沉积第一有机半导体材料以形成具有突起的连续的第一层,与第一电极相对的第一层的一侧的表面积至少为三倍 大于下面的横截面积; 将第二有机半导体材料直接沉积在第一层上以形成不连续的第二层,第一层的部分保持暴露; 将第三有机半导体材料直接沉积在第二层上以形成不连续的第三层,至少第二层的部分保持暴露; 在第三层上沉积第四有机半导体材料以形成连续的第四层,填充第一层,第二层和第三层中任何露出的间隙和凹陷; 以及在所述第四层上沉积第二电极,其中所述第一电极和所述第二电极中的至少一个是透明的,并且所述第一和第三有机半导体材料相对于第二和第四电极都是供体型或受体型 有机半导体材料,其它材料类型。
    • 8. 发明申请
    • ORGANIC HYBRID PLANAR-NANOCRYSTALLINE BULK HETEROJUNCTIONS
    • 有机混合平面 - 纳米晶体块体异常
    • US20110204416A1
    • 2011-08-25
    • US13011255
    • 2011-01-21
    • Stephen R. ForrestFan Yang
    • Stephen R. ForrestFan Yang
    • H01L51/44
    • H01L27/302B82Y10/00H01L51/0046H01L51/0078H01L51/0086H01L51/4246H01L51/4253Y02E10/549Y02P70/521
    • A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.
    • 具有改进的混合平面体异质结的光敏光电子器件包括设置在阳极和阴极之间的多个光导材料。 光电导材料包括供体材料的第一连续层和受主材料的第二连续层。 供体材料或材料的第一网络从第一连续层延伸到第二连续层,提供用于将孔传导到第一连续层的连续路径。 受主材料或材料的第二网络从第二连续层向第一连续层延伸,提供用于将电子传导到第二连续层的连续路径。 第一网络和第二网络彼此交错。 至少另一种光电导材料分散在隔行网络之间。 这种其他光电导材料或材料具有不同于供体和受体材料的吸收光谱。
    • 9. 发明授权
    • Method of fabricating an optoelectronic device having a bulk heterojunction
    • 制造具有体异质结的光电器件的方法
    • US07435617B2
    • 2008-10-14
    • US10999716
    • 2004-11-30
    • Max ShteinFan YangStephen R. Forrest
    • Max ShteinFan YangStephen R. Forrest
    • H01L51/40H01L35/24
    • B82Y30/00H01L51/0008H01L51/0053H01L51/0078H01L51/4213H01L51/4246H01L51/4253H01L2251/308Y02E10/549Y02P70/521
    • A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.
    • 制造光电器件的方法包括:在第一电极上沉积具有突起的第一层,其中第一层包含第一有机小分子材料; 在所述第一层上沉积第二层,使得所述第二层与所述第一层物理接触; 其中突起的最小横向尺寸为第一有机小分子材料的激子扩散长度的1至5倍; 以及在所述第二层上沉积第二电极以形成所述光电器件。 还提供了制造具有体异质结的有机光电子器件的方法,其包括:通过有机气相沉积在电极上沉积具有突起的第一层; 在第一层上沉积第二层,其中第一和第二层的界面形成体异质结; 并在第二层上沉积另一电极。
    • 10. 发明授权
    • Method of fabricating an optoelectronic device having a bulk heterojunction
    • 制造具有体异质结的光电器件的方法
    • US07419846B2
    • 2008-09-02
    • US10824288
    • 2004-04-13
    • Max ShteinFan YangStephen R. Forrest
    • Max ShteinFan YangStephen R. Forrest
    • H01L51/48H01L51/42
    • B82Y30/00H01L51/0008H01L51/0053H01L51/0078H01L51/4213H01L51/4246H01L51/4253H01L2251/308Y02E10/549Y02P70/521
    • A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.
    • 制造具有本体异质结的有机光电子器件的方法包括以下步骤:通过有机气相沉积在第一电极上沉积第一层,其中第一层包含第一有机小分子材料; 在所述第一层上沉积第二层使得所述第二层与所述第一层物理接触,其中所述第一层上的所述第二层的界面形成体异质结; 以及在所述第二层上沉积第二电极以形成所述光电器件。 在另一个实施例中,具有突起的第一层沉积在第一电极上,其中第一层包括第一有机小分子材料。 例如,当第一层是电子供体层时,第一电极是阳极,第二层是电子受体层,第二电极是阴极。 作为另一个例子,当第一层是电子受体层时,第一电极是阴极,第二层是电子供体层,第二电极是阳极。