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1. 发明申请

US20120080081A1 THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR SOLAR CELL PRECURSOR LAYER STACK, AND SOLAR CELL PRECURSOR LAYER STACK 审中-公开
标题翻译：薄膜太阳能制造工艺，太阳能电池前层堆叠沉积方法和太阳能电池前层堆叠
公开(公告)号：US20120080081A1
公开(公告)日：2012-04-05
申请号：US12903132
申请日：2010-10-12
申请人： Stefan KLEIN , Tobias STOLLEY , Susanne Buschbaum , Martin Rohde , Konrad Schwanitz , Christian Stoemmer
发明人： Stefan KLEIN , Tobias STOLLEY , Susanne Buschbaum , Martin Rohde , Konrad Schwanitz , Christian Stoemmer
IPC分类号： H01L31/105 , H01L31/18
CPC分类号： H01L31/076 , C23C16/401 , C23C16/402 , Y02E10/548
摘要： A method of manufacturing a layer stack adapted for a thin-film solar cell is and a precursor for a solar cell are described. The method includes depositing a TCO layer over a transparent substrate, depositing a first conductive-type layer a first p-i-n junction configured for the solar cell, depositing a first intrinsic-type layer of a first p-i-n junction configured for the solar cell and depositing a further conductive-layer with a conductivity opposite to the first conductive-type layer first p-i-n junction configured for the solar cell. The method further includes providing for a SiOx-containing intermediate layer by chemical vapor deposition and depositing a second p-i-n junction configured for the solar cell, wherein the SiOx-containing intermediate layer is provided within the a further conductive-type layer, and wherein the SiOx-containing layer has a thickness of 17 nm or less.
摘要翻译：描述适用于薄膜太阳能电池的层叠体的制造方法和太阳能电池的前体。该方法包括在透明衬底上沉积TCO层，为第二导电类型层沉积构造用于太阳能电池的第一引脚结，沉积针对太阳能电池构造的第一引脚结的第一本征型层，并进一步沉积导电层，其具有与为太阳能电池构造的第一导电类型第一引脚连接点相反的导电性。该方法还包括通过化学气相沉积提供含SiO x的中间层，并沉积为太阳能电池构成的第二pin结，其中所述含SiOx的中间层设置在另一导电型层内，并且其中SiO x 包含层的厚度为17nm以下。

2. 发明申请

US20120285522A1 THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR TCO LAYER, AND SOLAR CELL PRECURSOR LAYER STACK 审中-公开
标题翻译：薄膜太阳能制造工艺，TCO层沉积方法和太阳能电池前层堆叠
公开(公告)号：US20120285522A1
公开(公告)日：2012-11-15
申请号：US13468915
申请日：2012-05-10
申请人： Elisabeth Sommer , Philipp Obermeyer , Thomas Zilbauer , Inge Vermeir , Daniel Severin , Niels Kuhr , Markus Kress , Christof Kurthen , Ursula Ingeborg Schmidt , Stefan Klein , Susanne Buschbaum , Konrad Schwanitz , Christian Stoemmer , Tobias Stolley , Martin Rohde , Andreas Rembeck
发明人： Elisabeth Sommer , Philipp Obermeyer , Thomas Zilbauer , Inge Vermeir , Daniel Severin , Niels Kuhr , Markus Kress , Christof Kurthen , Ursula Ingeborg Schmidt , Stefan Klein , Susanne Buschbaum , Konrad Schwanitz , Christian Stoemmer , Tobias Stolley , Martin Rohde , Andreas Rembeck
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/0224 , H01L31/076 , C23C14/34 , C23C14/08
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/076 , Y02E10/548
摘要： Method of depositing a TCO layer on a substrate, of depositing precursors of a solar cell and precursors of a solar cell are described. The methods includes DC sputtering a ZnO-containing transparent conductive oxide layer over the substrate, the substrate having a size of 1.4 m2 or above and texturing the ZnO-containing transparent conductive oxide layer, wherein the textured ZnO-containing transparent conductive oxide layer has a root means square roughness of 60 nm or below.
摘要翻译：描述了在衬底上沉积TCO层，沉积太阳能电池的前体和太阳能电池的前体的方法。所述方法包括在衬底上溅射含ZnO的透明导电氧化物层，所述衬底具有1.4m 2或更大的尺寸，并对含ZnO的透明导电氧化物层进行纹理化，其中织构化的含ZnO透明导电氧化物层具有根是指60nm以下的平方粗糙度。

3. 发明申请

US20080217543A1 Energy Dispersive X-Ray I-FET SDD Detector Appliance and a Method for Pulsed Reset Neutralization of Accumulated Charges Within an Energy Dispersive X-Ray I-FET SDD Detector Appliance 有权
标题翻译：能量分散型X射线I-FET SDD检测器装置和一种能量分散X射线I-FET SDD检测器装置内脉冲重复中和累积电荷的方法
公开(公告)号：US20080217543A1
公开(公告)日：2008-09-11
申请号：US12015702
申请日：2008-01-17
申请人： Martin Rohde
发明人： Martin Rohde
IPC分类号： G01T1/24
CPC分类号： G01T1/24
摘要： The present invention is directed to an energy dispersive X-ray detector appliance and a method for pulsed reset of said appliance. The present invention provides a ramp-and-neutralize cycled I-FET SDD in which the voltage dependency and nonlinearity due to the integrated FET is reduced via a compensation circuit to a level that can be handled by a correction circuit. The correction circuit does not substantially add noise or other kinds of erroneous signals. Accordingly, the appliance comprises a silicon drift detector with internal field effect transistor I-FET SDD, a compensation circuit for compensating nonlinearities in the I-FET SDD; and a neutralizing circuit adapted to neutralize accumulated charges in I-FET SDD comprising means for pulsed reset of the detector.
摘要翻译：本发明涉及一种能量色散X射线检测器装置和用于所述器具的脉冲复位的方法。本发明提供了一种斜坡和中和循环I-FET SDD，其中通过补偿电路将由集成FET产生的电压依赖性和非线性度降低到可被校正电路处理的水平。校正电路基本上不增加噪声或其他类型的错误信号。因此，该器具包括具有内部场效应晶体管I-FET SDD的硅漂移检测器，用于补偿I-FET SDD中的非线性的补偿电路; 以及适于中和I-FET SDD中的累积电荷的中和电路，包括用于检测器的脉冲复位的装置。

4. 发明申请

US20080192889A1 HANDHELD X-RAY FLUORESCENCE SPECTROMETER 审中-公开
标题翻译：手持X射线荧光光谱仪
公开(公告)号：US20080192889A1
公开(公告)日：2008-08-14
申请号：US12031077
申请日：2008-02-14
申请人： Martin Rohde , Larry Stephen Price , Vassili Kobyitchak
发明人： Martin Rohde , Larry Stephen Price , Vassili Kobyitchak
IPC分类号： G01N23/223
CPC分类号： G01N23/223 , G01N2223/076
摘要： A handheld X-ray fluorescence (XRF) spectrometer is described. The handheld XRF spectrometer comprises a radiation source, a silicon drift detector (SDD), a cooling device configured to regulate the temperature of the SDD, at least one signal processing and power control module coupled to at least one of the radiation source, the SDD, and the cooling device, and a housing substantially encasing the radiation source, the SDD, the cooling device, and the at least one signal processing and power control module. The at least one signal processing and power control module includes at least one input/output connector.
摘要翻译：描述了手持式X射线荧光（XRF）光谱仪。手持XRF光谱仪包括辐射源，硅漂移检测器（SDD），被配置为调节SDD的温度的冷却装置，耦合到辐射源，SDD中的至少一个的至少一个信号处理和功率控制模块和冷却装置，以及基本上包围辐射源，SDD，冷却装置和至少一个信号处理和功率控制模块的壳体。所述至少一个信号处理和功率控制模块包括至少一个输入/输出连接器。

5. 发明授权

US07858946B2 Energy dispersive X-ray I-FET SDD detector appliance and a method for pulsed reset neutralization of accumulated charges within an energy dispersive X-ray I-FET SDD detector appliance 有权
标题翻译：能量色散X射线I-FET SDD检测器装置和用于脉冲复位中和能量色散X射线I-FET SDD检测器装置内的累积电荷的方法
公开(公告)号：US07858946B2
公开(公告)日：2010-12-28
申请号：US12015702
申请日：2008-01-17
申请人： Martin Rohde
发明人： Martin Rohde
IPC分类号： H01L27/144
CPC分类号： G01T1/24
摘要： The present invention is directed to an energy dispersive X-ray detector appliance and a method for pulsed reset of said appliance. The present invention provides a ramp-and-neutralize cycled I-FET SDD in which the voltage dependency and nonlinearity due to the integrated FET is reduced via a compensation circuit to a level that can be handled by a correction circuit. The correction circuit does not substantially add noise or other kinds of erroneous signals. Accordingly, the appliance comprises a silicon drift detector with internal field effect transistor I-FET SDD, a compensation circuit for compensating nonlinearities in the I-FET SDD; and a neutralizing circuit adapted to neutralize accumulated charges in I-FET SDD comprising means for pulsed reset of the detector.
摘要翻译：本发明涉及一种能量色散X射线检测器装置和用于所述器具的脉冲复位的方法。本发明提供了一种斜坡和中和循环I-FET SDD，其中通过补偿电路将由集成FET产生的电压依赖性和非线性度降低到可被校正电路处理的水平。校正电路基本上不增加噪声或其他类型的错误信号。因此，该器具包括具有内部场效应晶体管I-FET SDD的硅漂移检测器，用于补偿I-FET SDD中的非线性的补偿电路; 以及适于中和I-FET SDD中的累积电荷的中和电路，包括用于检测器的脉冲复位的装置。

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