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1. 发明授权

US08293553B2 Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element 有权
标题翻译：用于制造半导体层内的导电性降低的区域和光电子半导体元件的方法
公开(公告)号：US08293553B2
公开(公告)日：2012-10-23
申请号：US11597928
申请日：2005-04-25
申请人： Stefan Illek , Wilhelm Stein , Robert Walter , Ralph Wirth
发明人： Stefan Illek , Wilhelm Stein , Robert Walter , Ralph Wirth
IPC分类号： H01L21/00 , H01L23/58
CPC分类号： H01L21/02461 , H01L21/02463 , H01L21/02554 , H01L21/02573 , H01L21/02631 , H01L21/7605 , H01L33/0062 , H01L33/42
摘要： In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).
摘要翻译：在用于在导电III-V半导体层（3）内制造具有降低的导电性的至少一个区域（8）的方法中，将ZnO层（1）施加到半导体层的区域（8） 3），然后在优选300℃至500℃的温度下退火。优选在低于150℃的温度下将ZnO层（1）沉积在III-V半导体层（3）上，优选在大于或等于25℃且小于或等于120℃的温度下，具有降低的导电性的区域（8）优选位于激活区域（4）和连接触点（7），以便减少电流注入位于与连接触点（7）相对的有源区域（4）的区域中。

2. 发明申请

US20090008751A1 Method for Producing an Area having Reduced Electrical Conductivity Within a Semiconductor Layer and Optoelectronic Semiconductor Element 有权
标题翻译：在半导体层和光电子半导体元件内制造具有降低导电性的区域的方法
公开(公告)号：US20090008751A1
公开(公告)日：2009-01-08
申请号：US11597928
申请日：2005-04-25
申请人： Stefan Illek , Wilhelm Stein , Robert Walter , Ralph Wirth
发明人： Stefan Illek , Wilhelm Stein , Robert Walter , Ralph Wirth
IPC分类号： H01L23/58 , C23C14/00
CPC分类号： H01L21/02461 , H01L21/02463 , H01L21/02554 , H01L21/02573 , H01L21/02631 , H01L21/7605 , H01L33/0062 , H01L33/42
摘要： In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).
摘要翻译：在用于在导电III-V半导体层（3）内制造具有降低的导电性的至少一个区域（8）的方法中，将ZnO层（1）施加到半导体层的区域（8） 3），然后在优选300℃至500℃的温度下退火。优选在低于150℃的温度下将ZnO层（1）沉积在III-V半导体层（3）上，优选在大于或等于25℃且小于或等于120℃的温度下，具有降低的导电性的区域（8）优选位于激活区域（4）和连接触点（7），以便减少电流注入位于与连接触点（7）相对的有源区域（4）的区域中。

3. 发明授权

US07435605B2 Method for fabricating a component having an electrical contact region 有权
标题翻译：一种具有电接触区域的部件的制造方法
公开(公告)号：US07435605B2
公开(公告)日：2008-10-14
申请号：US11825895
申请日：2007-07-09
申请人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
发明人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/30 , Y10S438/933
摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
摘要翻译：一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料然后将外层退火。掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域使用所述方法。

4. 发明申请

US20070264740A1 Method for fabricating a component having an electrical contact region 有权
标题翻译：一种具有电接触区域的部件的制造方法
公开(公告)号：US20070264740A1
公开(公告)日：2007-11-15
申请号：US11825895
申请日：2007-07-09
申请人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
发明人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/30 , Y10S438/933
摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
摘要翻译：一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料然后将外层退火。掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域使用所述方法。

5. 发明授权

US07242034B2 Method for fabricating a component having an electrical contact region, and component having an electrical contact region 有权
标题翻译：用于制造具有电接触区域的部件的方法，以及具有电接触区域的部件
公开(公告)号：US07242034B2
公开(公告)日：2007-07-10
申请号：US10770693
申请日：2004-02-02
申请人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
发明人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
IPC分类号： H01L29/22
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/30 , Y10S438/933
摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
摘要翻译：一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料然后将外层退火。掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域使用所述方法。

6. 发明申请

US20050090031A1 Method for fabricating a component having an electrical contact region, and component having an electrical contact region 有权
标题翻译：用于制造具有电接触区域的部件的方法，以及具有电接触区域的部件
公开(公告)号：US20050090031A1
公开(公告)日：2005-04-28
申请号：US10770693
申请日：2004-02-02
申请人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
发明人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
IPC分类号： H01S5/042 , H01L33/00 , H01L33/30 , H01L33/40 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L29/20 , H01L29/24 , H01L31/0304
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/30 , Y10S438/933
摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
摘要翻译：一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料然后将外层退火。掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域使用所述方法。

7. 发明申请

US20050045978A1 Radiation-emitting semiconductor chip and method for producing such a semiconductor chip 有权
标题翻译：辐射发射半导体芯片及其制造方法
公开(公告)号：US20050045978A1
公开(公告)日：2005-03-03
申请号：US10883270
申请日：2004-06-30
申请人： Michael Zoelfl , Wilhelm Stein , Ralph Wirth
发明人： Michael Zoelfl , Wilhelm Stein , Ralph Wirth
IPC分类号： H01L31/00 , H01L33/14 , H01L33/38
CPC分类号： H01L33/38 , H01L33/145 , H01L33/387
摘要： A radiation-emitting semiconductor chip (1) having a semiconductor layer sequence (3) comprising at least one active layer (2) that generates an electromagnetic radiation, and having an electrical contact layer (7) comprising a connection region (4) and a current injection region (5), which is arranged at a distance beside the connection region (4) and is electrically connected. In accordance with a first embodiment, an absorbent brightness setting layer (12) is applied between the connection region (4) and the current injection region (5) and/or, as seen from the connection region (4), outside the current injection region (5) on a front-side radiation coupling-out area (10) of the semiconductor layer sequence (3). The brightness setting layer absorbs in a targeted manner part of a radiation generated in the semiconductor layer sequence (3). In accordance with a second embodiment, a partly insulating brightness setting layer (6) is arranged between the connection region (4) and the active layer (2). The brightness setting layer comprises at least one electrically insulating current blocking region (62) and at least one electrically conductive current passage region (61) via which the connection region (4) is electrically conductively connected to the semiconductor layer sequence (3) in such a way that, during operation of the semiconductor chip (1), part of the electromagnetic radiation generated in the chip is generated below the connection region (4) and is absorbed by the latter. Methods for producing such semiconductor chips are furthermore specified.
摘要翻译：一种辐射发射半导体芯片（1），其具有包括产生电磁辐射的至少一个有源层（2）的半导体层序列（3），并且具有包括连接区域（4）和电流注入区域（5），其被布置在连接区域（4）旁边并且被电连接。根据第一实施例，在连接区域（4）和电流注入区域（5）之间施加吸收性亮度设定层（12）和/或从连接区域（4）看，在电流注入之外区域（5）在半导体层序列（3）的前侧辐射耦合输出区域（10）上。亮度设定层以目标方式吸收在半导体层序列（3）中产生的辐射的一部分。根据第二实施例，在连接区域（4）和有源层（2）之间布置有部分绝缘的亮度设定层（6）。亮度设定层包括至少一个电绝缘电流阻挡区域（62）和至少一个导电电流通道区域（61），连接区域（4）经由该导电电流通道区域（61）导电地连接到半导体层序列（3）在半导体芯片（1）的操作期间，在芯片内产生的电磁辐射的一部分产生在连接区域（4）的下方并被后者吸收的方式。进一步说明制造这种半导体芯片的方法。

8. 发明授权

US07692204B2 Radiation emitting semi-conductor element 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07692204B2
公开(公告)日：2010-04-06
申请号：US10567883
申请日：2004-07-30
申请人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
发明人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
IPC分类号： H01L29/08
CPC分类号： H01L33/40 , H01L33/02
摘要： A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).
摘要翻译：一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生有源区（7）的半导体层序列（4），其中半导体层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

9. 发明授权

US07667240B2 Radiation-emitting semiconductor chip and method for producing such a semiconductor chip 有权
标题翻译：辐射发射半导体芯片及其制造方法
公开(公告)号：US07667240B2
公开(公告)日：2010-02-23
申请号：US10883270
申请日：2004-06-30
申请人： Michael Zoelfl , Wilhelm Stein , Ralph Wirth
发明人： Michael Zoelfl , Wilhelm Stein , Ralph Wirth
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L33/00 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/44
CPC分类号： H01L33/38 , H01L33/145 , H01L33/387
摘要： A radiation-emitting semiconductor chip having an absorbent brightness setting layer between a connection region and a current injection region and/or, as seen from the connection region, outside the current injection region on a front-side radiation coupling-out area of the semiconductor layer sequence. The brightness setting layer absorbs in a targeted manner part of the radiation generated in the semiconductor layer sequence. In another embodiment, a partly insulating brightness setting layer is arranged between the connection region and the active layer. Here, the brightness setting layer includes at least one electrically insulating current blocking region and at least one electrically conductive current passage region via which the connection region is electrically conductively connected to the semiconductor layer sequence such that, during operation of the semiconductor chip, part of the electromagnetic radiation generated in the chip is generated below the connection region and is absorbed by the connection region.
摘要翻译：一种辐射发射半导体芯片，其具有在连接区域和电流注入区域之间的吸收性亮度设定层和/或从连接区域观察到半导体的前侧辐射耦合输出区域上的电流注入区域外部层序列。亮度设定层以目标方式吸收在半导体层序列中产生的辐射的一部分。在另一实施例中，在连接区域和有源层之间布置部分绝缘的亮度设定层。这里，亮度设定层包括至少一个电绝缘电流阻挡区域和至少一个导电电流通道区域，连接区域通过该至少一个导电电流通道区域导电连接到半导体层序列，使得在半导体芯片的操作期间，芯片产生的电磁辐射在连接区域的下方产生，并被连接区域吸收。

10. 发明申请

US20070181894A1 Radiation emitting semi-conductor element 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US20070181894A1
公开(公告)日：2007-08-09
申请号：US10567883
申请日：2004-07-30
申请人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
发明人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/40 , H01L33/02
摘要： A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).
摘要翻译：一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生活性区（7）的半导体层序列（4），其中半导体层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

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