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    • 3. 发明授权
    • Pixel structure and the method of forming the same
    • 像素结构及其形成方法
    • US08330162B2
    • 2012-12-11
    • US12499752
    • 2009-07-08
    • Ssu-Lin YenChia-Ming Chiang
    • Ssu-Lin YenChia-Ming Chiang
    • H01L27/14
    • H01L27/124G02F2001/13606
    • A pixel structure includes a drain extension portion disposed on an islanding semiconductor layer, wherein the islanding semiconductor layer is formed together with a thin-film transistor channel layer. Therefore, the total thickness of the islanding semiconductor layer and the drain extension portion is increased, such that the distance between the gate line and the drain extension portion is enlarged, and the coupling capacitance between the gate line and the drain extension portion can be lowered. Therefore, the display panel with the pixel structure of the present invention can have low coupling capacitance so as to improve the flicker phenomena obviously.
    • 像素结构包括设置在孤岛半导体层上的漏极延伸部分,其中孤岛化半导体层与薄膜晶体管沟道层一起形成。 因此,孤岛化半导体层和漏极延伸部分的总厚度增加,使得栅极线和漏极延伸部分之间的距离增大,并且可以降低栅极线和漏极延伸部分之间的耦合电容 。 因此,具有本发明的像素结构的显示面板可以具有低耦合电容,从而明显改善闪烁现象。
    • 4. 发明申请
    • Pixel Structure and the Method of Forming the Same
    • 像素结构及其形成方法
    • US20100270550A1
    • 2010-10-28
    • US12499752
    • 2009-07-08
    • Ssu-Lin YenChia-Ming Chiang
    • Ssu-Lin YenChia-Ming Chiang
    • H01L29/786H01L21/336
    • H01L27/124G02F2001/13606
    • A pixel structure includes a drain shielding extension portion disposed on a floating semiconductor layer, wherein the floating semiconductor layer is formed together with a thin-film transistor channel layer. Therefore, the total thickness of the floating semiconductor layer and the drain shielding extension portion is increased, such that the distance between the gate line and the drain shielding extension portion is enlarged, and the coupling capacitance between the gate line and the drain shielding extension portion can be lowered. Therefore, the display panel with the pixel structure of the present invention can have low coupling capacitance so as to improve the flicker phenomena obviously.
    • 像素结构包括布置在浮动半导体层上的漏极屏蔽延伸部分,其中浮动半导体层与薄膜晶体管沟道层一起形成。 因此,浮动半导体层和漏极屏蔽延伸部分的总厚度增加,使得栅极线和漏极屏蔽延伸部分之间的距离增大,并且栅极线和漏极屏蔽延伸部分之间的耦合电容 可以降低 因此,具有本发明的像素结构的显示面板可以具有低耦合电容,从而明显改善闪烁现象。