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1. 发明授权

US06884731B2 Method for forming magnetic tunneling junction layer for magnetic random access memory 有权
标题翻译：磁性随机存取存储器磁隧道结层形成方法
公开(公告)号：US06884731B2
公开(公告)日：2005-04-26
申请号：US10765279
申请日：2004-01-28
申请人： Soon-won Hwang , I-hun Song , Tae-wan Kim
发明人： Soon-won Hwang , I-hun Song , Tae-wan Kim
IPC分类号： H01L21/3065 , G11C11/14 , G11C11/15 , G11C11/16 , H01L21/302 , H01L21/336 , H01L21/461 , H01L21/70 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/12
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/12
摘要： A method of forming a magnetic tunneling junction (MTJ) layer for an MRAM includes sequentially forming a lower material layer, an insulation layer, and an upper material layer on a substrate, forming a mask pattern on a predetermined region of the upper material layer, sequentially removing the upper material layer, the insulation layer, and the lower material layer from around the mask pattern using plasma generated from an etching gas, wherein the etching gas is a mixture of a main gas and an additive gas having a predetermined mixture ratio and including no chlorine (Cl2) gas, and removing the mask pattern. Accordingly, an MTJ layer formed by the method may incur no thermal damage due to high temperature etching, no material deposits due to by-products of etching, and no step difference or corrosion due to chlorine gas, and may have an excellent profile.
摘要翻译：形成用于MRAM的磁隧道结（MTJ）层的方法包括：在衬底上依次形成下层材料层，绝缘层和上层材料层，在上层材料层的预定区域上形成掩模图案，使用从蚀刻气体产生的等离子体从掩模图案周围顺序地去除上部材料层，绝缘层和下部材料层，其中，蚀刻气体是主要气体和具有预定混合比的添加剂气体的混合物，包括没有氯（Cl 2/2））气体，并且去除掩模图案。因此，通过该方法形成的MTJ层可能不会由于高温蚀刻而导致热损伤，由于蚀刻的副产物而没有材料沉积，并且没有由于氯气导致的阶梯差或腐蚀，并且可能具有优异的外形。

2. 发明授权

US07220601B2 Method of forming nano-sized MTJ cell without contact hole 有权
标题翻译：形成无接触孔的纳米尺寸MTJ电池的方法
公开(公告)号：US07220601B2
公开(公告)日：2007-05-22
申请号：US11033830
申请日：2005-01-13
申请人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
发明人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/16
摘要： Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.
摘要翻译：提供一种制造其中形成MTJ电池中的接触而不形成接触孔的纳米尺寸的MTJ电池的方法。形成MTJ单元的方法包括在基板上形成MTJ层，通过图案化MTJ层形成MTJ单元区域，在MTJ层上依次沉积绝缘层和掩模层，暴露MTJ单元区域的上表面通过以相同的蚀刻速率蚀刻掩模层和绝缘层，并在绝缘层和MTJ层上沉积金属层。

3. 发明授权

US07397099B2 Method of forming nano-sized MTJ cell without contact hole 有权
标题翻译：形成无接触孔的纳米尺寸MTJ电池的方法
公开(公告)号：US07397099B2
公开(公告)日：2008-07-08
申请号：US11710475
申请日：2007-02-26
申请人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
发明人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , G11C11/16
摘要： Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.
摘要翻译：提供一种制造其中形成MTJ电池中的接触而不形成接触孔的纳米尺寸的MTJ电池的方法。形成MTJ单元的方法包括在基板上形成MTJ层，通过图案化MTJ层形成MTJ单元区域，在MTJ层上依次沉积绝缘层和掩模层，暴露MTJ单元区域的上表面通过以相同的蚀刻速率蚀刻掩模层和绝缘层，并在绝缘层和MTJ层上沉积金属层。

4. 发明申请

US20070164338A1 Method of forming nano-sized MTJ cell without contact hole 有权
公开(公告)号：US20070164338A1
公开(公告)日：2007-07-19
申请号：US11710475
申请日：2007-02-26
申请人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
发明人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
IPC分类号： H01L29/94
CPC分类号： H01L43/12 , G11C11/16
摘要： Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.

5. 发明申请

US20050158882A1 Method of forming nano-sized MTJ cell without contact hole 有权
标题翻译：形成无接触孔的纳米尺寸MTJ电池的方法
公开(公告)号：US20050158882A1
公开(公告)日：2005-07-21
申请号：US11033830
申请日：2005-01-13
申请人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
发明人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
IPC分类号： H01L21/28 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L43/00 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , G11C11/16
摘要： Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.
摘要翻译：提供一种制造其中形成MTJ电池中的接触而不形成接触孔的纳米尺寸的MTJ电池的方法。形成MTJ单元的方法包括在基板上形成MTJ层，通过图案化MTJ层形成MTJ单元区域，在MTJ层上依次沉积绝缘层和掩模层，暴露MTJ单元区域的上表面通过以相同的蚀刻速率蚀刻掩模层和绝缘层，并在绝缘层和MTJ层上沉积金属层。

6. 发明授权

US06815784B2 Magneto-resistive random access memory 有权
标题翻译：磁阻随机存取存储器
公开(公告)号：US06815784B2
公开(公告)日：2004-11-09
申请号：US10445828
申请日：2003-05-28
申请人： Wan-jun Park , Taek-dong Lee , Byeong-kook Park , Tae-wan Kim , I-hun Song , Sang-jin Park
发明人： Wan-jun Park , Taek-dong Lee , Byeong-kook Park , Tae-wan Kim , I-hun Song , Sang-jin Park
IPC分类号： H01L2982
CPC分类号： H01L27/228 , B82Y10/00
摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

7. 发明授权

US07220599B2 Method for manufacturing magneto-resistive random access memory 有权
标题翻译：制造磁阻随机存取存储器的方法
公开(公告)号：US07220599B2
公开(公告)日：2007-05-22
申请号：US10950584
申请日：2004-09-28
申请人： Wan-jun Park , Taek-dong Lee , Byeong-kook Park , Tae-wan Kim , I-hun Song , Sang-jin Park
发明人： Wan-jun Park , Taek-dong Lee , Byeong-kook Park , Tae-wan Kim , I-hun Song , Sang-jin Park
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： H01L27/228 , B82Y10/00
摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.
摘要翻译：磁阻随机存取存储器包括MOS晶体管，其具有第一栅极和衬底上的源极和漏极结，连接到源极结的下部电极，下部电极上的第一磁性层，包括铝和铪的介电阻挡层在与第一磁性层一起形成势阱的第一磁性层上，与第一磁性层相对的介电阻挡层上的第二磁性层，第二磁性层上的上部电极，位于第一磁性层之间的第二栅极栅极和下部电极，以控制第一和第二磁性层之一的磁性数据，以及与第一栅极正交并电连接到上部电极的位线。阻挡层的改进的特性提高了磁阻比并提高了磁阻随机存取存储器的数据存储容量。

8. 发明申请

US20060208294A1 Method of manufacturing magnetic random access memory including middle oxide layer 失效
标题翻译：包括中间氧化物层的磁性随机存取存储器的制造方法
公开(公告)号：US20060208294A1
公开(公告)日：2006-09-21
申请号：US11438211
申请日：2006-05-23
申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
发明人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
IPC分类号： H01L31/062
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
摘要翻译：在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层，顺序堆叠。隧道氧化物层可以使用原子层沉积（ALD）方法形成。至少防氧化层可以使用除ALD法以外的方法形成。

9. 发明授权

US06781871B2 Magnetic random access memory and method of operating the same 有权
标题翻译：磁性随机存取存储器及其操作方法
公开(公告)号：US06781871B2
公开(公告)日：2004-08-24
申请号：US10316844
申请日：2002-12-12
申请人： Wan-jun Park , Tae-wan Kim , I-hun Song , Sang-jin Park , Richard J. Gambino
发明人： Wan-jun Park , Tae-wan Kim , I-hun Song , Sang-jin Park , Richard J. Gambino
IPC分类号： G11C1100
CPC分类号： G11C19/0808 , G11C11/15 , G11C11/16
摘要： A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.
摘要翻译：一种使用磁畴阻力和巨磁阻（GMR）或隧道磁阻（TMR）的磁性随机存取存储器及其操作方法，其中磁性随机存取存储器包括数据存储单元，其包括固定层，非磁性层和具有两端的自由层; 电连接到自由层的两端的数据输入装置，用于向自由层施加电流以将数据输入数据存储单元; 以及电连接到所述自由层和所述固定层的数据输出装置，以输出存储在所述数据存储单元中的数据。因此，根据本发明的磁性随机存取存储器具有比使用切换字段来记录数据的磁性随机存取存储器更好的性能。

10. 发明授权

US07897412B2 Method of manufacturing magnetic random access memory including middle oxide layer 失效
标题翻译：包括中间氧化物层的磁性随机存取存储器的制造方法
公开(公告)号：US07897412B2
公开(公告)日：2011-03-01
申请号：US11438211
申请日：2006-05-23
申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
发明人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
IPC分类号： H01L31/062
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
摘要翻译：在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层，顺序堆叠。隧道氧化物层可以使用原子层沉积（ALD）方法形成。至少防氧化层可以使用除ALD法以外的方法形成。

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