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1. 发明申请

US20060270201A1 Nano-air-bridged lateral overgrowth of GaN semiconductor layer 审中-公开
标题翻译： GaN半导体层的纳米空气桥接横向过度生长
公开(公告)号：US20060270201A1
公开(公告)日：2006-11-30
申请号：US11434399
申请日：2006-05-15
申请人： Soo Chua , Yadong Wang , Keyan Zang
发明人： Soo Chua , Yadong Wang , Keyan Zang
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A technique for growing a high quality gallium nitride layer on a uniform nano-patterned substrate is described. The invented technique is based on the transfer of ordered nano-patterns from a nano-template to the substrate, followed by the growth of gallium nitride on the nano-patterned substrate. The nano-patterned substrate serves as a buffer layer to reduce the stress and dislocations.
摘要翻译：描述了在均匀的纳米图案化衬底上生长高质量氮化镓层的技术。本发明的技术基于有序纳米图案从纳米模板转移到衬底，随后在纳米图案化衬底上生长氮化镓。纳米图案化衬底用作缓冲层以减少应力和位错。

2. 发明申请

US20050007721A1 Contact pressure sensor and method for manufacturing the same 有权
标题翻译：接触式压力传感器及其制造方法
公开(公告)号：US20050007721A1
公开(公告)日：2005-01-13
申请号：US10615413
申请日：2003-07-08
申请人： Ramam Akkipeddi , Christopher Sperring , Siew Toh , Cho Tay , Mustafizur Rahman , Soo Chua
发明人： Ramam Akkipeddi , Christopher Sperring , Siew Toh , Cho Tay , Mustafizur Rahman , Soo Chua
IPC分类号： G01L1/22 , H01H47/12
CPC分类号： G01L1/2293
摘要： A contact pressure sensor (10) and method for manufacturing a contact pressure sensor for detecting contact pressure between two surfaces is disclosed. The contact pressure sensor disclosed comprises a substrate (40) for supporting the sensor and a contact pressure sensitive layer (26) sensitive to pressure applied to the contact pressure sensor. The method disclosed also comprises transferring a process post structure (8) that is formed on a first process support substrate (20) from the first process support substrate to a second contact pressure sensor support substrate (40).
摘要翻译：公开了一种用于制造用于检测两个表面之间的接触压力的接触压力传感器的接触压力传感器（10）和方法。所公开的接触压力传感器包括用于支撑传感器的基板（40）和对施加到接触压力传感器的压力敏感的接触压敏层（26）。所公开的方法还包括将形成在第一工艺支撑衬底（20）上的工艺柱结构（8）从第一工艺支撑衬底转移到第二接触压力传感器支撑衬底（40）。

3. 发明申请

US20070128765A1 ENCAPSULATION OF ELECTROLUMINESCENT DEVICES WITH SHAPED SPACERS 失效
标题翻译：具有形状间隔的电致发光器件的封装
公开(公告)号：US20070128765A1
公开(公告)日：2007-06-07
申请号：US11674098
申请日：2007-02-12
申请人： Mark Auch , Ewald Guenther , Soo Chua
发明人： Mark Auch , Ewald Guenther , Soo Chua
IPC分类号： H01L21/00
CPC分类号： H01L51/525 , H01L27/3241 , H01L33/483 , H01L51/5246
摘要： A method of encapsulating a device is disclosed. Spacer particles are randomly located in a device region to prevent a cap mounted on the substrate from contacting the active components when pressure is applied to the cap, thereby protecting the active components from damage. The spacer particles comprise a base and an upper portion, the base being at least equal to or wider than the upper portion.
摘要翻译：公开了封装装置的方法。间隔物颗粒随机地位于装置区域中，以防止当将压力施加到盖子上时，安装在基板上的盖子与活性组分接触，从而保护活性成分免受损坏。间隔物颗粒包括基部和上部，基部至少等于或大于上部。

4. 发明申请

US20060191474A1 Method and structure for fabricating III-V nitride layers on silicon substrates 失效
标题翻译：在硅衬底上制造III-V族氮化物层的方法和结构
公开(公告)号：US20060191474A1
公开(公告)日：2006-08-31
申请号：US11344472
申请日：2006-02-01
申请人： Peng Chen , Soo Chua , Zhonglin Miao , Sudhiranjan Tripathy
发明人： Peng Chen , Soo Chua , Zhonglin Miao , Sudhiranjan Tripathy
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： B82Y20/00 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/04
摘要： A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.
摘要翻译：用于在硅衬底上制造III-V族氮化物层的方法和结构包括衬底，具有AlGaN，AlN和GaN层的过渡结构，以及具有AlGaN和GaN层的超晶格结构。在本发明中，通过使用AlN作为第一缓冲层，在AlN（0001）和Si（111）晶格之间具有5:4的一致性来解决GaN和硅之间的大晶格失配（17％），以将晶格失配减小到1.3 ％。

5. 发明申请

US20070292957A1 Sensor for Measuring Gas Permeability of a Test Material 有权
标题翻译：用于测量测试材料的透气度的传感器
公开(公告)号：US20070292957A1
公开(公告)日：2007-12-20
申请号：US10594789
申请日：2004-03-31
申请人： Soo Chua , Senthil Ramadas , Xinbo He
发明人： Soo Chua , Senthil Ramadas , Xinbo He
IPC分类号： G01N15/08 , B01J19/00 , B05D5/12
CPC分类号： G01N15/0826 , G01N27/121
摘要： A sensor for measuring gas permeability of a test material, comprising: an electrically conductive sensing element that comprises a water and/or oxygen sensitive material, wherein the reaction of said material with water or oxygen when the sensing element is contacted with water and/or oxygen results in a change in the electrical conductivity of the sensing element, and two electrodes electrically connected to the sensing element.
摘要翻译：一种用于测量测试材料的透气性的传感器，包括：导电感测元件，其包括水和/或氧敏感材料，其中当感测元件与水接触时，所述材料与水或氧的反应和/或氧导致感测元件的电导率的变化，以及电连接到感测元件的两个电极。

6. 发明申请

US20070091954A1 METHOD OF SELECTIVE POST-GROWTH TUNING OF AN OPTICAL BANDGAP OF A SEMI-CONDUCTOR HETEROSTRUCTURE AND PRODUCTS PRODUCED THEREOF 审中-公开
标题翻译：半导体结构的光学带状选择性后生长调谐方法及其生产的产品
公开(公告)号：US20070091954A1
公开(公告)日：2007-04-26
申请号：US11554043
申请日：2006-10-30
申请人： Gang LI , Soo Chua
发明人： Gang LI , Soo Chua
IPC分类号： H01S5/00
CPC分类号： H01L21/388 , H01L21/182 , H01L33/0095 , H01S5/4087
摘要： A method of controlling the degree of IFVEI for post-growth tuning of an optical bandgap of a semiconductor heterostructure. The resultant layer structure may contain a semi-conductor heterostructure with one or more regions with selectively modified bandgap. According to one aspect of the invention, a metal interlayer is deposited between the heterostructure and a dielectric layer such as silica. According to another aspect of the invention, an oxidized surface is provided between a dielectric layer and the heterostructure. The presence of the oxide layer improves stability and reproducibility in the post-annealing process. In a further aspect, the oxide layer may be provided between the interlayer and the heterostructure. In one embodiment of the invention, a photoresist mask with a specific pattern is deposited on the surface of the heterostructure so that the interlayer is deposited in an unmasked region whereon post-growth tuning results. In another embodiment, multiple photolithography is performed to deposit interlayers of varying thickness and/or regions on the heterostructure, followed by thermal post-annealing of the dielectric layer. This method produces heterostructures with optical bandgaps having selectively tuned regions.
摘要翻译：控制用于半导体异质结构的光学带隙的后生长调谐的IFVEI的程度的方法。所得到的层结构可以包含具有一个或多个具有选择性改性带隙的区域的半导体异质结构。根据本发明的一个方面，金属中间层沉积在异质结构和介电层如二氧化硅之间。根据本发明的另一方面，在电介质层和异质结构之间提供氧化表面。氧化物层的存在提高了后退火工艺中的稳定性和再现性。在另一方面，氧化物层可以设置在中间层和异质结构之间。在本发明的一个实施例中，具有特定图案的光致抗蚀剂掩模沉积在异质结构的表面上，使得中间层沉积在未成荫的区域中，其中生长后调节结果。在另一个实施例中，执行多次光刻以在异质结构上沉积不同厚度和/或区域的夹层，然后对介电层进行热后退火。该方法产生具有选择性调谐区域的光学带隙的异质结构。

7. 发明申请

US20050202673A1 Silicide formed from ternary metal alloy films 失效
标题翻译：由三元金属合金膜形成的硅化物
公开(公告)号：US20050202673A1
公开(公告)日：2005-09-15
申请号：US10799705
申请日：2004-03-15
申请人： Dongzhi Chi , Tek Rinus , Soo Chua
发明人： Dongzhi Chi , Tek Rinus , Soo Chua
IPC分类号： H01L21/336 , H01L21/44 , H01L21/8234
CPC分类号： H01L21/28518
摘要： A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides. The method of fabricating the nickel silicide layer includes providing a substrate comprising silicon, depositing a layer of at least a 3-component metal alloy comprising nickel on a surface of the substrate, and annealing the alloy and the substrate. The annealing temperature is less than 1000° C. The 3-component metal alloy can include Ni, Ti and Pt.
摘要翻译：在硅上的NiSi层是热稳定的并且甚至可以在氧化物的存在下形成。制造硅化镍层的方法包括提供包括硅的衬底，在衬底的表面上沉积包含镍的至少一种3组分金属合金层，并退火该合金和衬底。退火温度小于1000℃.3组分金属合金可以包括Ni，Ti和Pt。

8. 发明申请

US20050236640A1 Laminates for encapsulating devices 有权
公开(公告)号：US20050236640A1
公开(公告)日：2005-10-27
申请号：US11171826
申请日：2005-06-29
申请人： Ewald Guenther , Wei Wang , Soo Chua
发明人： Ewald Guenther , Wei Wang , Soo Chua
IPC分类号： H01L23/29 , H01L21/56 , H01L23/02 , H01L23/31 , H01L27/32 , H01L29/24 , H01L51/52 , H05K5/02 , H05K5/06
CPC分类号： H01L51/524 , H01L51/5246 , H01L51/525 , H01L51/5253 , H01L2251/5338
摘要： An encapsulation for an electrical device is disclosed. The encapsulation comprises plastic substrates which are laminated onto the surface of the electrical device. The use of laminated plastics is particularly useful for flexible electrical devices such as organic LEDs.

9. 发明申请

US20050012448A1 Organic light emitting diode (oled) 有权
标题翻译：有机发光二极管（oled）
公开(公告)号：US20050012448A1
公开(公告)日：2005-01-20
申请号：US10497427
申请日：2002-11-27
申请人： Lin Ke , Senthil Ramadas , Soo Chua
发明人： Lin Ke , Senthil Ramadas , Soo Chua
IPC分类号： H05B33/22 , H01L51/50 , H01L51/52 , H05B33/04 , H01J1/62
CPC分类号： H01L51/5253 , H01L51/5221 , Y10S428/917
摘要： An Organic Light Emitting Diode (OLED) which is adapted to inhibit the formation and growth of non-emissive areas known as “dark spots.” The OLED comprises an anode disposed on a substrate, a cathode, an electroluminescent (EL) layer disposed between the anode and the cathode and a hole transport layer disposed between the anode and the EL layer. The OLED has one or more dielectric organic barrier layers disposed between one or more of the OLED's layers. These barrier layers are made from an organic polymer and are adapted to resist permeation by oxygen and moisture and to inhibit metal migration.
摘要翻译：有机发光二极管（OLED），其适于抑制称为“黑点”的非发射区域的形成和生长。 OLED包括设置在基板上的阳极，阴极，设置在阳极和阴极之间的电致发光（EL）层和设置在阳极和EL层之间的空穴传输层。 OLED具有设置在一个或多个OLED层之间的一个或多个介电有机阻挡层。这些阻挡层由有机聚合物制成并且适于抵抗氧气和水分的渗透并抑制金属迁移。

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