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1. 发明申请

US20190157545A1 MAGNETIC ELEMENT 审中-公开
公开(公告)号：US20190157545A1
公开(公告)日：2019-05-23
申请号：US16251451
申请日：2019-01-18
申请人： Sony Corporation
发明人： Kazutaka YAMANE , Masanori HOSOMI , Hiroyuki OHMORI , Kazuhiro BESSHO , Yutaka HIGO , Tetsuya ASAYAMA , Hiroyuki UCHIDA
IPC分类号： H01L43/08 , G11C11/16 , H01L27/22 , H01L43/02 , H01F10/32 , H01L43/10
摘要： A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

2. 发明申请

US20160240217A1 STORAGE ELEMENT, STORAGE APPARATUS, AND MAGNETIC HEAD 有权
标题翻译：存储元件，存储设备和磁头
公开(公告)号：US20160240217A1
公开(公告)日：2016-08-18
申请号：US15141241
申请日：2016-04-28
申请人： Sony Corporation
发明人： Kazutaka YAMANE , Masanori HOSOMI , Hiroyuki OHMORI , Kazuhiro BESSHO , Yutaka HIGO , Tetsuya ASAYAMA , Hiroyuki UCHIDA
IPC分类号： G11B5/31 , H01L43/08 , G11B5/127 , G11C11/16 , H01L23/528 , H01L27/22 , H01L43/02 , H01L43/10
CPC分类号： G11B5/3146 , B82Y25/00 , G11B5/1278 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L23/528 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.
摘要翻译：提供存储元件。存储元件包括存储层; 固定磁化层; 包括非磁性材料的中间层; 其中所述中间层设置在所述存储层和所述固定磁化层之间; 其中所述固定磁化层至少包括第一磁性层，第二磁性层和非磁性层，并且其中所述第一磁性层包括CoFeB组合物。还提供了存储装置和磁头。

3. 发明申请

US20140367814A1 STORAGE ELEMENT, STORAGE DEVICE, METHOD OF MANUFACTURING STORAGE ELEMENT, AND MAGNETIC HEAD 有权
标题翻译：存储元件，存储器件，存储元件的制造方法和磁头
公开(公告)号：US20140367814A1
公开(公告)日：2014-12-18
申请号：US14299228
申请日：2014-06-09
申请人： Sony Corporation
发明人： Hiroyuki OHMORI , Masanori HOSOMI , Kazuhiro BESSHO , Yutaka HIGO , Kazutaka YAMANE , Hiroyuki UCHIDA
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228 , H01L43/08
摘要： A storage element includes a layer structure, which includes a storage layer including magnetization perpendicular to the film surface, in which the magnetization direction is changed corresponding to information; a magnetization fixing layer including magnetization perpendicular to the film surface that becomes a reference for information stored on the storage layer; a tunnel barrier layer made from an oxide provided between the storage layer and the magnetization fixing layer; and a spin barrier layer made from an oxide provided contacting the surface of the opposite side of the storage layer to the surface contacting the tunnel barrier layer. A low resistance region is formed in a portion of the spin barrier layer formed with a predetermined set film thickness value and information storage on the storage layer is performed by changing the magnetization direction of the storage layer by current flowing in the stacking direction of the layer structure.
摘要翻译：存储元件包括层结构，其包括包含垂直于膜表面的磁化的存储层，其中磁化方向根据信息而改变; 磁化固定层，其包括垂直于膜表面的磁化，其成为存储在存储层上的信息的参考; 由设置在所述存储层和所述磁化固定层之间的氧化物制成的隧道势垒层; 以及由与存储层的相反侧的表面接触的氧化物形成的自旋势垒层与与隧道势垒层接触的表面。在以预定的设定膜厚度值形成的自旋阻挡层的一部分中形成低电阻区域，并且通过在层的层叠方向上流动的电流改变存储层的磁化方向来进行存储层上的信息存储结构体。

4. 发明申请

US20210174826A1 STORAGE ELEMENT 有权
公开(公告)号：US20210174826A1
公开(公告)日：2021-06-10
申请号：US17181052
申请日：2021-02-22
申请人： Sony Corporation
发明人： Kazutaka YAMANE , Masanori HOSOMI , Hiroyuki OHMORI , Kazuhiro BESSHO , Yutaka HIGO , Tetsuya ASAYAMA , Hiroyuki UCHIDA
IPC分类号： G11B5/31 , G11B5/39 , H01L43/08 , H01L43/02 , H01L43/10 , H01L23/528 , H01F10/32 , G11C11/16 , H01L27/22 , G11B5/127 , H01F10/12 , B82Y25/00
摘要： A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

5. 发明申请

US20200279578A1 STORAGE ELEMENT 审中-公开
公开(公告)号：US20200279578A1
公开(公告)日：2020-09-03
申请号：US16874007
申请日：2020-05-14
申请人： Sony Corporation
发明人： Kazutaka YAMANE , Masanori HOSOMI , Hiroyuki OHMORI , Kazuhiro BESSHO , Yutaka HIGO , Tetsuya ASAYAMA , Hiroyuki UCHIDA
IPC分类号： G11B5/31 , H01F10/32 , G11B5/39 , G11C11/16 , H01L43/10 , H01L43/08 , H01L43/02 , G11B5/127 , H01L23/528 , H01L27/22
摘要： A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

6. 发明申请

US20170186945A1 MAGNETIC ELEMENT 审中-公开
公开(公告)号：US20170186945A1
公开(公告)日：2017-06-29
申请号：US15458470
申请日：2017-03-14
申请人： Sony Corporation
发明人： Kazutaka YAMANE , Masanori HOSOMI , Hiroyuki OHMORI , Kazuhiro BESSHO , Yutaka HIGO , Tetsuya ASAYAMA , Hiroyuki UCHIDA
IPC分类号： H01L43/08 , H01L27/22 , H01L43/10 , G11C11/16 , H01F10/32 , H01L43/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01F10/3286 , H01F10/329 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/10
摘要： A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

7. 发明申请

US20140254253A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20140254253A1
公开(公告)日：2014-09-11
申请号：US14278716
申请日：2014-05-15
申请人： Sony Corporation
发明人： Hiroyuki UCHIDA , Masanori HOSOMI , Hiroyuki OHMORI , Kazuhiro BESSHO , Yutaka HIGO , Kazutaka YAMANE
IPC分类号： G11C11/16 , H01F10/32
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： There is disclosed a memory element including a memory layer that has a magnetization and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, and a Ta film in contact with a face of the magnetization-fixed layer, the face of the magnetization-fixed layer is opposite to the insulating layer side.
摘要翻译：公开了一种存储元件，其包括存储层，该存储层具有相应于信息的磁化和磁化方向的变化; 具有磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录相对于存储层执行信息，和与磁化固定层的表面接触的Ta膜，磁化固定层的表面与绝缘层侧相反。

8. 发明申请

US20200227106A1 MAGNETIC STORAGE ELEMENT 审中-公开
公开(公告)号：US20200227106A1
公开(公告)日：2020-07-16
申请号：US16836063
申请日：2020-03-31
申请人： SONY CORPORATION
发明人： Hiroyuki OHMORI , Masanori HOSOMI , Kazuhiro BESSHO , Yutaka HIGO , Hiroyuki UCHIDA
IPC分类号： G11C11/16 , H01L43/02 , H01L43/08 , H01L43/10 , H01L27/22
摘要： There is provided a magnetic storage element including: a storage layer; a reference layer provided at least one surface side of the storage layer with a non-magnetic layer in between; a magnetization fixation layer provided at a surface side opposite to a surface of the reference layer at which the storage layer is provided, with a non-magnetic layer in between; and a magnetization assist layer provided at a surface side opposite to a surface of the magnetization fixation layer at which the reference layer is provided, with a non-magnetic layer in between, in which change in a magnetization direction is easier than in the storage layer.

9. 发明申请

US20190189172A1 NONVOLATILE MEMORY CELL, MEMORY CELL UNIT, AND INFORMATION WRITING METHOD, AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20190189172A1
公开(公告)日：2019-06-20
申请号：US16301063
申请日：2017-04-18
申请人： SONY CORPORATION
发明人： Yutaka HIGO , Masanori HOSOMI , Hiroyuki OHMORI , Kazuhiro BESSHO , Hiroyuki UCHIDA
IPC分类号： G11C11/16 , H01L43/02 , H01L27/22
摘要： A nonvolatile memory cell includes: a layered structure body 11 formed by layering a storage layer 20 that stores information in accordance with a magnetization direction and a magnetization fixed layer 30 that defines a magnetization direction of the storage layer 20; and a heating layer 40 that heats the magnetization fixed layer 30 to control a magnetization direction of the magnetization fixed layer 30.

10. 发明申请

US20190096957A1 MAGNETORESISTIVE ELEMENT AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20190096957A1
公开(公告)日：2019-03-28
申请号：US16078759
申请日：2016-12-01
申请人： SONY CORPORATION
发明人： Hiroyuki UCHIDA , Masanori HOSOMI , Hiroyuki OHMORI , Kazuhiro BESSHO , Yutaka HIGO
IPC分类号： H01L27/22 , H01L43/08 , G11C11/16
摘要： A magnetoresistive element includes: a first laminated structure body having a first surface and a second surface 20B facing the first surface; and a second laminated structure body formed by laminating a storage layer, an intermediate layer, and a magnetization fixed layer, the second laminated structure body having a first surface and a second surface facing the first surface, the first surface being positioned facing the second surface of the first laminated structure body. The first laminated structure body has a laminated structure including, from the first surface side of the first laminated structure body, a first layer made of a metal nitride and a second layer made of ruthenium or a ruthenium compound.

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