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1. 发明申请

US20090200588A1 BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT REFLECTING TRANSFER GATE 有权
标题翻译：背光照明传感器与光反射转移门
公开(公告)号：US20090200588A1
公开(公告)日：2009-08-13
申请号：US12199737
申请日：2008-08-27
申请人： Sohei Manabe , Hsin-Chih Tai , Vincent Venezia , Duli Mao , Yin Qian
发明人： Sohei Manabe , Hsin-Chih Tai , Vincent Venezia , Duli Mao , Yin Qian
IPC分类号： H01L31/112
CPC分类号： H01L27/14603 , H01L27/14625 , H01L27/1464 , H01L27/14683
摘要： A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.
摘要翻译：背面照明成像传感器包括具有可以包括光电二极管区域，绝缘层和反射层的成像像素的半导体。光电二极管通常形成在半导体衬底的前侧。表面屏蔽层可以形成在光电二极管区域的前侧。可以使用传感器前侧的硅化多晶硅形成光反射层。光电二极管区域从半导体衬底的后表面接收光。当接收的光的一部分通过光电二极管区域传播到光反射层时，光反射层将从光电二极管区域接收的光的一部分朝向光电二极管区域反射。硅化多晶硅光反射层还形成晶体管的栅极，用于在光电二极管区域和浮置漏极之间建立导电沟道。

2. 发明授权

US07820498B2 Backside illuminated imaging sensor with light reflecting transfer gate 有权
标题翻译：带反射传输门的背面照明成像传感器
公开(公告)号：US07820498B2
公开(公告)日：2010-10-26
申请号：US12199737
申请日：2008-08-27
申请人： Sohei Manabe , Hsin-Chih Tai , Vincent Venezia , Duli Mao , Yin Qian
发明人： Sohei Manabe , Hsin-Chih Tai , Vincent Venezia , Duli Mao , Yin Qian
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14625 , H01L27/1464 , H01L27/14683
摘要： A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.
摘要翻译：背面照明成像传感器包括具有可以包括光电二极管区域，绝缘层和反射层的成像像素的半导体。光电二极管通常形成在半导体衬底的前侧。表面屏蔽层可以形成在光电二极管区域的前侧。可以使用传感器前侧的硅化多晶硅形成光反射层。光电二极管区域从半导体衬底的后表面接收光。当一部分接收的光通过光电二极管区域传播到光反射层时，光反射层将从光电二极管区域接收的光的一部分反射向光电二极管区域。硅化多晶硅光反射层还形成晶体管的栅极，用于在光电二极管区域和浮置漏极之间建立导电沟道。

3. 发明申请

US20090200590A1 IMAGE SENSOR WITH LOW ELECTRICAL CROSS-TALK 有权
标题翻译：具有低电压交叉口的图像传感器
公开(公告)号：US20090200590A1
公开(公告)日：2009-08-13
申请号：US12259143
申请日：2008-10-27
申请人： Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L31/103
摘要： An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.
摘要翻译：使用衬底形成像素阵列，其中每个像素具有背面的衬底和包括金属化层的前面，在衬底中形成的光电二极管，使用与感光区域相邻的前端处理形成的前侧P阱，以及形成在光电二极管下方的衬底中的N型区域。 N型区域形成在光电二极管下面的衬底的区域中，并且至少部分地形成在衬底的比前面P阱的深度更深的区域中。

4. 发明授权

US08357984B2 Image sensor with low electrical cross-talk 有权
标题翻译：图像传感器具有低电气串扰
公开(公告)号：US08357984B2
公开(公告)日：2013-01-22
申请号：US12259143
申请日：2008-10-27
申请人： Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L31/103
摘要： An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.
摘要翻译：使用衬底形成像素阵列，其中每个像素具有背面的衬底和包括金属化层的前面，在衬底中形成的光电二极管，使用与感光区域相邻的前端处理形成的前侧P阱，以及形成在光电二极管下方的衬底中的N型区域。 N型区域形成在光电二极管下面的衬底的区域中，并且至少部分地形成在衬底的比前面P阱的深度更深的区域中。

5. 发明授权

US08426796B2 Image sensor having supplemental capacitive coupling node 有权
标题翻译：具有补充电容耦合节点的图像传感器
公开(公告)号：US08426796B2
公开(公告)日：2013-04-23
申请号：US13619879
申请日：2012-09-14
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
IPC分类号： H01L27/146
CPC分类号： H04N5/35509 , H04N5/3559 , H04N5/3597 , H04N5/37452 , H04N5/376
摘要： An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.
摘要翻译：图像传感器包括像素阵列，位线，补充电容节点线和控制电路。像素阵列包括多个像素单元，每个像素单元包括浮动扩散（“FD”）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。位线被耦合以选择性地进行从第一组像素单元输出的图像数据。辅助电容节点线耦合到与第一组不同的第二组像素单元的FD节点。控制电路通过选择性地在辅助电容节点线上确定FD升压信号来耦合到辅助电容节点线，以选择性地增加第二组的每个像素单元的FD节点的电位。

6. 发明授权

US08294077B2 Image sensor having supplemental capacitive coupling node 有权
标题翻译：具有补充电容耦合节点的图像传感器
公开(公告)号：US08294077B2
公开(公告)日：2012-10-23
申请号：US12972188
申请日：2010-12-17
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
IPC分类号： H01L27/146
CPC分类号： H04N5/35509 , H04N5/3559 , H04N5/3597 , H04N5/37452 , H04N5/376
摘要： An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.
摘要翻译：图像传感器包括像素阵列，位线，补充电容节点线和补充电容电路。像素阵列包括多个像素单元，每个像素单元包括浮动扩散（FD）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。位线被耦合以选择性地进行从第一组像素单元输出的图像数据。辅助电容节点线耦合到第二组像素单元的FD节点，以响应于控制信号选择性地将辅助电容耦合到第二组的FD节点。在各种实施例中，第一和第二组像素单元可以是相同的组或像素单元的不同组，并且可以添加电容性升压特征或多转换增益特征。

7. 发明授权

US08804021B2 Method, apparatus and system for providing improved full well capacity in an image sensor pixel 有权
标题翻译：用于在图像传感器像素中提供改进的全井容量的方法，装置和系统
公开(公告)号：US08804021B2
公开(公告)日：2014-08-12
申请号：US13288880
申请日：2011-11-03
申请人： Sohei Manabe , Keh-Chiang Ku , Vincent Venezia , Hsin-Chih Tai , Duli Mao , Howard E. Rhodes
发明人： Sohei Manabe , Keh-Chiang Ku , Vincent Venezia , Hsin-Chih Tai , Duli Mao , Howard E. Rhodes
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14643 , H01L27/1461 , H01L27/14612 , H01L27/14616 , H01L27/1463 , H01L27/14641
摘要： Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle.
摘要翻译：用于提高图像传感器中像素结构的完整容量的技术和机制。在一个实施例中，图像传感器的第一像素结构包括植入区域，其中植入区域的偏斜对应于植入角度，并且图像传感器的第二像素结构包括传输门。在另一个实施例中，第一像素结构的注入区域与第二像素结构的传输门的偏移对应于植入角度。

8. 发明申请

US20100323470A1 BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES 有权
标题翻译：具有深层反光透镜的背面照明图像传感器
公开(公告)号：US20100323470A1
公开(公告)日：2010-12-23
申请号：US12853847
申请日：2010-08-10
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
IPC分类号： H01L31/0232
CPC分类号： H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
摘要： An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
摘要翻译：使用具有前侧和后侧的半导体层形成像素阵列，通过该半导体层接收入射光。每个像素通常包括形成在半导体层中的感光区域和与感光区域相邻形成的沟槽。沟槽使得入射光被引导离开沟槽并朝向光敏区域。

9. 发明授权

US07800192B2 Backside illuminated image sensor having deep light reflective trenches 有权
标题翻译：具有深光反射沟槽的背面照明图像传感器
公开(公告)号：US07800192B2
公开(公告)日：2010-09-21
申请号：US12204743
申请日：2008-09-04
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
IPC分类号： H01L31/00
CPC分类号： H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
摘要： An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
摘要翻译：使用具有用于接收入射光的前侧和后侧的基板形成像素阵列。每个像素通常包括包括在基板的前侧中的金属化层，形成在基板的背面中的感光区域和在基板的背面中的感光区域周围形成的沟槽。沟槽使得入射光被引导离开沟槽并朝向光敏区域。

10. 发明申请

US20090200625A1 BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES 有权
标题翻译：具有深层反光透镜的背面照明图像传感器
公开(公告)号：US20090200625A1
公开(公告)日：2009-08-13
申请号：US12204743
申请日：2008-09-04
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
摘要： An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
摘要翻译：使用具有用于接收入射光的前侧和后侧的基板形成像素阵列。每个像素通常包括包括在基板的前侧中的金属化层，形成在基板的背面中的感光区域和在基板的背面中的感光区域周围形成的沟槽。沟槽使得入射光被引导离开沟槽并朝向光敏区域。

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