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    • 1. 发明申请
    • WAFER INSPECTION SYSTEM
    • 波浪检测系统
    • US20110141462A1
    • 2011-06-16
    • US13034565
    • 2011-02-24
    • Silviu ReinhornDaniel SomeGilad Almogy
    • Silviu ReinhornDaniel SomeGilad Almogy
    • G01N21/88
    • G01N21/9501G01N21/1717
    • Apparatus for inspecting a surface, including a plurality of pump sources having respective pump optical output ends and providing respective pump beams through the pump optical output ends, and a plurality of probe sources having respective probe optical output ends and providing respective probe beams through the probe optical output ends. There is an alignment mounting which holds the respective pump optical output ends and probe optical output ends in equal respective effective spatial offsets, and optics which convey the respective pump beams and probe beams to the surface, so as to generate returning radiation from a plurality of respective locations thereon, and which convey the returning radiation from the respective locations. The apparatus includes a receiving unit which is adapted to receive the returning radiation and which is adapted to determine a characteristic of the respective locations in response thereto.
    • 用于检查表面的装置,包括具有相应的泵浦光学输出端的多个泵浦源,并且通过泵浦光学输出端提供相应的泵浦光束,以及具有相应的探测光学输出端的多个探测源,并且通过探针提供相应的探测光束 光输出端。 存在对准安装,其将相应的泵浦光学输出端和探测光学输出端保持在相等的有效空间偏移中;以及光学器件,其将相应的泵浦光束和探测光束传送到表面,以便产生来自多个 各自的位置,并且从各个位置传送返回的辐射。 该装置包括接收单元,该接收单元适于接收返回的辐射并适于响应于此确定相应位置的特性。
    • 2. 发明申请
    • Wafer inspection system
    • 晶圆检查系统
    • US20060012791A1
    • 2006-01-19
    • US11158733
    • 2005-06-21
    • Silviu ReinhornDaniel SomeGilad Almogy
    • Silviu ReinhornDaniel SomeGilad Almogy
    • G01N21/88
    • G01N21/9501G01N21/1717
    • Apparatus for inspecting a surface, including a plurality of pump sources having respective pump optical output ends and providing respective pump beams through the pump optical output ends, and a plurality of probe sources having respective probe optical output ends and providing respective probe beams through the probe optical output ends. There is an alignment mounting which holds the respective pump optical output ends and probe optical output ends in equal respective effective spatial offsets, and optics which convey the respective pump beams and probe beams to the surface, so as to generate returning radiation from a plurality of respective locations thereon, and which convey the returning radiation from the respective locations. The apparatus includes a receiving unit which is adapted to receive the returning radiation and which is adapted to determine a characteristic of the respective locations in response thereto.
    • 用于检查表面的装置,包括具有相应的泵浦光学输出端的多个泵浦源,并且通过泵浦光学输出端提供相应的泵浦光束,以及具有相应的探测光学输出端的多个探测源,并且通过探针提供相应的探测光束 光输出端。 存在对准安装,其将相应的泵浦光学输出端和探测光学输出端保持在相等的有效空间偏移中;以及光学器件,其将相应的泵浦光束和探测光束传送到表面,以便产生来自多个 各自的位置,并且从各个位置传送返回的辐射。 该装置包括接收单元,该接收单元适于接收返回的辐射并适于响应于此确定相应位置的特性。
    • 3. 发明授权
    • Method and apparatus for inspection of patterned semiconductor wafers
    • US06671398B2
    • 2003-12-30
    • US09964733
    • 2001-09-28
    • Silviu ReinhornGilad Almogy
    • Silviu ReinhornGilad Almogy
    • G06K900
    • G01N21/95692H01L22/12
    • Novel method and apparatus are disclosed for inspecting a wafer surface to detect the presence thereon of exposed conductive material, particularly for determining the integrity of contact holes and vias, in semiconductor wafer manufacturing. The method comprises the steps of irradiating a spot of the wafer surface with a beam having a wavelength sufficiently shorter than the working function of the metal, such as deep UV light beam, collecting the electrons released by the irradiated wafer, generating an electrical signal that is a function of the collected electrons, and inspecting the signal to determine whether the contact holes or vias within the irradiated wafer spot are open. The apparatus comprises a vacuum chamber having therein a stage and chuck for supporting the wafer. An illumination source generates irradiating energy which is formed into a beam using appropriate optics so as to obtain the desired beam spot of the wafer's surface. an electron detector collects electrons released from the wafer surface and sends a corresponding signal to a processor for processing the signal to determine whether the metal at the bottom of the hole is exposed. Optionally, the light scattered by the wafer is detected by detectors arranged around the illuminating beam.
    • 5. 发明授权
    • Laser scanning wafer inspection using nonlinear optical phenomena
    • 激光扫描晶圆检查采用非线性光学现象
    • US06791099B2
    • 2004-09-14
    • US09784626
    • 2001-02-14
    • Daniel I. SomeSilviu ReinhornGilad Almogy
    • Daniel I. SomeSilviu ReinhornGilad Almogy
    • G01V800
    • G01N21/9501G01N21/4788G01N21/64G01N21/65G01N21/658
    • An optical inspection apparatus and method is provided that utilizes both linear and nonlinear optical phenomena to detect defects. Embodiments include irradiating a portion of the surface of an article, such as a semiconductor device, with a light beam, such as a scanning laser at an incident wavelength. The light emanating from the irradiated surface portion is then separated into light at the incident wavelength and light at one or more predetermined non-incident wavelengths, as by a diffraction grating, prism or filters. The light at the incident and nonincident wavelengths is sent to separate detectors, such as photomultipliers (PMT), which respectively convert the detected linear optical phenomena (representing, e.g., surface topography) into an electrical signal, and the detected nonlinear optical phenomena, such as fluorescence, Raman scattering and/or second harmonic generation, into electrical signals representing, e.g., chemical composition and material interfaces. The signal from each detector is sent to a processor, which generates a defect map based on the information gleaned from both the linear and nonlinear optical phenomena.
    • 提供一种利用线性和非线性光学现象来检测缺陷的光学检查装置和方法。 实施例包括用入射波长的诸如扫描激光束的光束照射诸如半导体器件的物品的表面的一部分。 然后将从照射的表面部分发出的光分离成入射波长的光和一个或多个预定非入射波长的光,如通过衍射光栅,棱镜或滤光器。 将入射波长和非相干波长的光发送到分离的检测器,例如光电倍增管(PMT),其分别将检测到的线性光学现象(例如,表面形貌)转换为电信号,以及检测到的非线性光学现象 作为荧光,拉曼散射和/或二次谐波产生,代表例如化学成分和材料界面的电信号。 来自每个检测器的信号被发送到处理器,其基于从线性和非线性光学现象收集的信息产生缺陷图。
    • 6. 发明授权
    • Method and apparatus for inspection of patterned semiconductor wafers
    • 用于检查图案化半导体晶片的方法和装置
    • US06317514B1
    • 2001-11-13
    • US09150296
    • 1998-09-09
    • Silviu ReinhornGilad Almogy
    • Silviu ReinhornGilad Almogy
    • G06K900
    • G01N21/95692H01L22/12
    • Novel method and apparatus are disclosed for inspecting a wafer surface to detect the presence thereon of exposed conductive material, particularly for determining the integrity of contact holes and vias, in semiconductor wafer manufacturing. The method comprises the steps of irradiating a spot of the wafer surface with a beam having a wavelength sufficiently shorter than the working function of the metal, such as deep UV light beam, collecting the electrons released by the irradiated wafer, generating an electrical signal that is a function of the collected electrons, and inspecting the signal to determine whether the contact holes or vias within the irradiated wafer spot are open. The apparatus comprises a vacuum chamber having therein a stage and chuck for supporting the wafer. An illumination source generates irradiating energy which is formed into a beam using appropriate optics so as to obtain the desired beam spot of the wafer's surface. an electron detector collects electrons released from the wafer surface and sends a corresponding signal to a processor for processing the signal to determine whether the metal at the bottom of the hole is exposed. Optionally, the light scattered by the wafer is detected by detectors arranged around the illuminating beam.
    • 公开了新颖的方法和装置,用于检查晶片表面以检测其中暴露的导电材料的存在,特别是用于确定半导体晶片制造中的接触孔和通孔的完整性。 该方法包括以下步骤:用波长足够短于诸如深UV光束的金属的工作功能的波长的光束照射晶片表面,收集被辐射的晶片释放的电子,产生电信号, 是收集的电子的函数,并且检查信号以确定辐射晶片位置内的接触孔或通孔是否打开。 该装置包括其中具有用于支撑晶片的台和卡盘的真空室。 照明源产生照射能量,其使用适当的光学器件形成为光束,以便获得晶片表面的期望的光束点。 电子检测器收集从晶片表面释放的电子,并将相应的信号发送到处理器以处理信号,以确定孔底部的金属是否暴露。 可选地,通过布置在照明光束周围的检测器来检测被晶片散射的光。