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1. 发明授权

US09698090B2 Semiconductor substrate and fabrication method thereof 有权
公开(公告)号：US09698090B2
公开(公告)日：2017-07-04
申请号：US13753882
申请日：2013-01-30
申请人： Siliconware Precision Industries Co., Ltd.
发明人： Bo-Shiang Fang , Ho-Chuan Lin , Chia-Chu Lai , Min-Han Chuang , Li-Fang Lin
IPC分类号： H01L23/48 , H01L23/498 , H01L23/14 , H01L23/13 , H01L21/768
CPC分类号： H01L23/49827 , H01L21/76898 , H01L23/13 , H01L23/147 , H01L23/49816 , H01L23/49822 , H01L23/49894 , H01L2224/11 , H01L2924/0002 , H01L2924/19011 , H01L2924/00
摘要： A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.

2. 发明授权

US09281557B2 Multi bandwidth balun and circuit structure thereof 有权
标题翻译：多频带平衡 - 不平衡变换器及其电路结构
公开(公告)号：US09281557B2
公开(公告)日：2016-03-08
申请号：US14090787
申请日：2013-11-26
申请人： Siliconware Precision Industries Co., Ltd
发明人： Chia-Chu Lai , Min-Han Chuang , Bo-Shiang Fang , Ho-Chuan Lin , Li-Fang Lin
IPC分类号： H01Q1/50 , H03H5/00 , H03H7/42
CPC分类号： H01Q1/50 , H03H7/425
摘要： A multi bandwidth balun is provided, including a main signal port, a main inductor electrically connected to the main signal port, a first inductor inducted mutually with the main inductor to constitute a first inductor of a first conversion circuit, a first capacitor module connected in parallel to the first conversion circuit, two first signal ports electrically connected to the first capacitor module, a first main capacitor electrically connected to the first signal port and the first capacitor module therebetween, a second inductor inducted mutually with the main inductor to constitute a second inductor of a second conversion circuit, a second capacitor module connected in parallel to the second conversion circuit, two second signal ports electrically connected to the second capacitor module, and a second main capacitor electrically connected to the second signal port and the second capacitor module therebetween.
摘要翻译：提供了一种多频带平衡 - 不平衡变压器，包括主信号端口，电连接到主信号端口的主电感器，与主电感器相互感应的第一电感器，以构成第一转换电路的第一电感器;第一电容器模块，与第一转换电路平行的两个第一信号端口电连接到第一电容器模块，电连接到第一信号端口和第一电容器模块之间的第一主电容器，与主电感器相互感应的第二电感器，以构成第二电容器第二转换电路的电感器，与第二转换电路并联连接的第二电容器模块，电连接到第二电容器模块的两个第二信号端口，以及与第二信号端口和第二电容器模块电连接的第二主电容器。

3. 发明申请

US20140204806A1 DUPLEXER, CIRCUIT STRUCTURE THEREOF AND RF TRANSCEIVER APPARATUS COMPRISING THE DUPLEXER 有权
标题翻译：双工器，其电路结构及包含双工器的射频收发器
公开(公告)号：US20140204806A1
公开(公告)日：2014-07-24
申请号：US13875550
申请日：2013-05-02
申请人： SILICONWARE PRECISION INDUSTRIES CO., LTD.
发明人： Min-Han Chuang , Chia-Chu Lai , Bo-Shiang Fang , Ho-Chuan Lin , Yen-Yu Chen
IPC分类号： H03H7/46
CPC分类号： H03H7/463 , H03H7/09 , H03H7/1775 , H03H7/1783 , H03H2001/0064 , H03H2001/0078
摘要： A duplexer is provided, which includes a first, a second and a third signal ports; a first filter and a second filter. The first filter has first, second, and third resonant circuits that have first, second and third inductors, respectively. The first, second and third inductors are mutually inductive. The first and third resonant circuits are electrically connected to the first and second signal ports, respectively. The second filter has fourth, fifth and sixth resonant circuits that have fourth, fifth and sixth inductors, respectively. The fourth resonant circuit is connected in series with the first resonant circuit. The fifth inductor and the fourth inductor are mutually inductive. The sixth resonant circuit is electrically connected to the third signal port. The second filter further has a main capacitor connected in series with the fifth and sixth resonant circuits respectively and located therebetween.
摘要翻译：提供了一种双工器，其包括第一，第二和第三信号端口; 第一过滤器和第二过滤器。第一滤波器具有分别具有第一，第二和第三电感器的第一，第二和第三谐振电路。第一，第二和第三电感器是互感的。第一和第三谐振电路分别电连接到第一和第二信号端口。第二滤波器具有分别具有第四，第五和第六电感器的第四，第五和第六谐振电路。第四谐振电路与第一谐振电路串联连接。第五电感器和第四电感器是互感的。第六谐振电路与第三信号端口电连接。第二滤波器还具有分别与第五和第六谐振电路串联连接的主电容器，并位于它们之间。

4. 发明申请

US20170271251A1 FABRICATION METHOD OF SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：US20170271251A1
公开(公告)日：2017-09-21
申请号：US15612390
申请日：2017-06-02
申请人： Siliconware Precision Industries Co., Ltd.
发明人： Bo-Shiang Fang , Ho-Chuan Lin , Chia-Chu Lai , Min-Han Chuang , Li-Fang Lin
IPC分类号： H01L23/498 , H01L23/14 , H01L21/768 , H01L23/13
摘要： A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.

5. 发明授权

US09503043B2 Duplexer, circuit structure thereof and RF transceiver apparatus comprising the duplexer 有权
标题翻译：双工器，其电路结构和包括双工器的RF收发器设备
公开(公告)号：US09503043B2
公开(公告)日：2016-11-22
申请号：US13875550
申请日：2013-05-02
申请人： Siliconware Precision Industries Co., Ltd.
发明人： Min-Han Chuang , Chia-Chu Lai , Bo-Shiang Fang , Ho-Chuan Lin , Yen-Yu Chen
IPC分类号： H03H7/46 , H03H7/09 , H03H7/01 , H03H1/00
CPC分类号： H03H7/463 , H03H7/09 , H03H7/1775 , H03H7/1783 , H03H2001/0064 , H03H2001/0078
摘要： A duplexer is provided, which includes a first, a second and a third signal ports; a first filter and a second filter. The first filter has first, second, and third resonant circuits that have first, second and third inductors, respectively. The first, second and third inductors are mutually inductive. The first and third resonant circuits are electrically connected to the first and second signal ports, respectively. The second filter has fourth, fifth and sixth resonant circuits that have fourth, fifth and sixth inductors, respectively. The fourth resonant circuit is connected in series with the first resonant circuit. The fifth inductor and the fourth inductor are mutually inductive. The sixth resonant circuit is electrically connected to the third signal port. The second filter further has a main capacitor connected in series with the fifth and sixth resonant circuits respectively and located therebetween.
摘要翻译：提供了一种双工器，其包括第一，第二和第三信号端口; 第一过滤器和第二过滤器。第一滤波器具有分别具有第一，第二和第三电感器的第一，第二和第三谐振电路。第一，第二和第三电感器是互感的。第一和第三谐振电路分别电连接到第一和第二信号端口。第二滤波器具有分别具有第四，第五和第六电感器的第四，第五和第六谐振电路。第四谐振电路与第一谐振电路串联连接。第五电感器和第四电感器是互感的。第六谐振电路与第三信号端口电连接。第二滤波器还具有分别与第五和第六谐振电路串联连接的主电容器，并位于它们之间。

6. 发明申请

US20220359374A1 ELECTRONIC MODULE, MANUFACTURING METHOD THEREOF AND ELECTRONIC PACKAGE HAVING THE SAME 有权
公开(公告)号：US20220359374A1
公开(公告)日：2022-11-10
申请号：US17465137
申请日：2021-09-02
申请人： SILICONWARE PRECISION INDUSTRIES CO., LTD.
发明人： Ho-Chuan Lin , Chia-Chu Lai , Min-Han Chuang
IPC分类号： H01L23/522 , H01L23/31 , H01L49/02
摘要： An electronic module is provided, in which a first metal layer, an insulating layer and a second metal layer are sequentially formed on side faces and a non-active face of an electronic component to serve as a capacitor structure, where the capacitor structure is exposed from an active face of the electronic component so that by directly forming the capacitor structure on the electronic component, a distance between the capacitor structure and the electronic component is minimized, such that the effect of suppressing impedance can be optimized.

7. 发明申请

US20220359324A1 ELECTRONIC PACKAGE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20220359324A1
公开(公告)日：2022-11-10
申请号：US17368475
申请日：2021-07-06
申请人： SILICONWARE PRECISION INDUSTRIES CO., LTD.
发明人： Ho-Chuan Lin , Min-Han Chuang , Chia-Chu Lai
IPC分类号： H01L23/31 , H01L23/528 , H01L23/00 , H01L21/56
摘要： An electronic package is provided, in which an electronic component with a conductive layer on an outer surface thereof is embedded in an encapsulant, where at least one electrode pad is disposed on an active surface of the electronic component, and at least one wire electrically connected to the electrode pad is arranged inside the electronic component, so that the conductive layer is electrically connected to the wire, such that the electrode pad, the wire and the conductive layer are used as a power transmission structure which serves as a current path to reduce DC resistance and improve an impedance issue associated with the supply of power.

8. 发明申请

US20140124950A1 SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体基板及其制造方法
公开(公告)号：US20140124950A1
公开(公告)日：2014-05-08
申请号：US13753882
申请日：2013-01-30
申请人： SILICONWARE PRECISION INDUSTRIES CO., LTD.
发明人： Bo-Shiang Fang , Ho-Chuan Lin , Chia-Chu Lai , Min-Han Chuang , Li-Fang Lin
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L23/49827 , H01L21/76898 , H01L23/13 , H01L23/147 , H01L23/49816 , H01L23/49822 , H01L23/49894 , H01L2224/11 , H01L2924/0002 , H01L2924/19011 , H01L2924/00
摘要： A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.
摘要翻译：公开了一种半导体衬底。半导体衬底包括：至少在其表面上形成有开口的衬底本体，其中衬底主体的表面和开口的壁由绝缘材料制成; 以及形成在所述基板主体的表面上的电路层，其中所述电路层覆盖所述开口的端部并且与所述开口电绝缘。该开口有助于增加硅材料的电路层和衬底主体之间的绝缘结构的厚度，以防止当高频信号施加到电路层时的信号劣化。

9. 发明申请

US20220359975A1 ELECTRONIC PACKAGE AND ANTENNA STRUCTURE THEREOF 有权
公开(公告)号：US20220359975A1
公开(公告)日：2022-11-10
申请号：US17360843
申请日：2021-06-28
申请人： SILICONWARE PRECISION INDUSTRIES CO., LTD.
发明人： Chia-Chu Lai , Ho-Chuan Lin , Min-Han Chuang
IPC分类号： H01Q1/22 , H01Q1/38 , H01Q1/48 , H01Q1/24 , H01L23/66
摘要： An electronic package is provided, in which a ground layer is arranged on one side of an insulator, and a first antenna portion and a second antenna portion embedded in the insulator are vertically disposed on the ground layer, where a gap is formed between the first antenna portion and the second antenna portion, such that the first antenna portion and the second antenna portion are electrically matched with each other, and the ground layer is electrically connected to the second antenna portion but free from being electrically connected to the first antenna portion.

10. 发明申请

US20150188510A1 CIRCUIT STRUCTURE 审中-公开
标题翻译：电路结构
公开(公告)号：US20150188510A1
公开(公告)日：2015-07-02
申请号：US14210789
申请日：2014-03-14
申请人： SILICONWARE PRECISION INDUSTRIES CO., LTD
发明人： Ho-Chuan Lin , Chia-Chu Lai , Min-Han Chuang , Li-Fang Lin , Ming-Fan Tsai
IPC分类号： H03H7/01
CPC分类号： H03H7/0115 , H03H7/175 , H03H7/1766 , H03H7/1775 , H03H7/42 , H03H7/463 , H03H2001/0085
摘要： A circuit structure is provided, which includes: a first circuit portion having at least a capacitor; a first dielectric portion combined with the first circuit portion; a second circuit portion electrically connected to the first circuit portion and having at least an inductor; and a second dielectric portion combined with the second circuit portion, wherein the first dielectric portion has a greater dielectric constant than the second dielectric portion, thereby increasing the capacitance value and density and causing the inductor to have a high enough Q value.
摘要翻译：提供了一种电路结构，其包括：具有至少一个电容器的第一电路部分; 与第一电路部分组合的第一电介质部分; 电连接到第一电路部分并且具有至少一个电感器的第二电路部分; 以及与第二电路部分组合的第二电介质部分，其中第一电介质部分具有比第二电介质部分更大的介电常数，从而增加电容值和密度，并使电感器具有足够高的Q值。

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