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1. 发明授权

US10510379B1 Method for controlling operations of memory device, associated memory device and controller thereof, and associated electronic device 有权
公开(公告)号：US10510379B1
公开(公告)日：2019-12-17
申请号：US16540065
申请日：2019-08-14
申请人： Silicon Motion Inc.
发明人： Yu-Wei Chyan , Li-Shuo Hsiao
IPC分类号： G11C5/14 , G06F1/3225 , G11C16/24 , G11C16/08 , G11C29/04
摘要： A method for controlling operations of a memory device, the memory device and the controller thereof, and the associated electronic device are provided. The method can comprise: before a voltage-drop event regarding a driving voltage occurs, mapping a rising reference voltage and a falling reference voltage to a first reference voltage and a second reference voltage, respectively; when the voltage-drop event occurs, pausing at least one access operation to a non-volatile (NV) memory, and mapping the rising reference voltage and the falling reference voltage to another first reference voltage and another second reference voltage, respectively; and when the voltage-drop event ends, mapping the rising reference voltage and the falling reference voltage to the first reference voltage and the second reference voltage, respectively.

2. 发明授权

US10120752B2 Data storage device and data access-method 有权
公开(公告)号：US10120752B2
公开(公告)日：2018-11-06
申请号：US15675817
申请日：2017-08-14
申请人： Silicon Motion, Inc.
发明人： Li-Shuo Hsiao , Chang-Kai Cheng
IPC分类号： G11C29/00 , G06F11/10 , G06F3/06 , G06F12/00
摘要： The present invention provides a data-storage device including a flash memory and a controller. The flash memory includes a plurality of blocks, and each of the blocks has a plurality of pages, wherein each of the pages has a plurality of sub-pages and a plurality of spare areas, each of the spare areas is arranged to store a spare data sector, and the spare data sector respectively corresponds to the sub-pages. The controller is arranged to access the sub-pages according to the spare data sector.

3. 发明授权

US09766974B2 Data storage device and data access-method 有权
公开(公告)号：US09766974B2
公开(公告)日：2017-09-19
申请号：US14547412
申请日：2014-11-19
申请人： Silicon Motion, Inc.
发明人： Li-Shuo Hsiao , Chang-Kai Cheng
IPC分类号： G11C29/00 , G06F11/10 , G06F3/06 , G06F12/00
CPC分类号： G06F11/1068 , G06F3/0619 , G06F3/064 , G06F3/0679 , G06F11/1016 , G06F12/00 , G06F12/0246 , G06F2212/1016 , G06F2212/1044 , G06F2212/7201 , G06F2212/7202 , G06F2212/7207
摘要： The present invention provides a data-storage device including a flash memory and a controller. The flash memory includes a plurality of blocks, and each of the blocks has a plurality of pages, wherein each of the pages has a plurality of sub-pages and a plurality of spare areas, each of the spare areas is arranged to store a spare data sector, and the spare data sector respectively corresponds to the sub-pages. The controller is arranged to access the sub-pages according to the spare data sector.

4. 发明授权

US09417959B2 Flash device and operating method thereof 有权
标题翻译：闪光装置及其操作方法
公开(公告)号：US09417959B2
公开(公告)日：2016-08-16
申请号：US14059615
申请日：2013-10-22
申请人： Silicon Motion, Inc.
发明人： Li-Shuo Hsiao
IPC分类号： G06F11/10
CPC分类号： G06F11/1068 , G06F2212/7209
摘要： A flash device is provided. A flash memory includes a plurality of pages. A controller coupled to the flash memory includes an operating unit, an error correction code (ECC) decoder and a processing unit. The operating unit receives a plurality of bytes of the page which are from the flash memory and corresponding to a read command, and obtains an operating result according to a logic level of each bit of each of the bytes. The ECC decoder decodes the bytes of the page according to an ECC code. The processing unit determines whether the page is valid data according to the decoded bytes, and determines whether the page is an empty page according to the operating result when the page is not the valid data.
摘要翻译：提供闪光灯装置。闪存包括多页。耦合到闪速存储器的控制器包括操作单元，纠错码（ECC）解码器和处理单元。操作单元接收来自闪存并且对应于读取命令的页面的多个字节，并且根据每个字节的每个位的逻辑电平获得操作结果。 ECC解码器根据ECC码解码页面的字节。处理单元根据解码的字节确定页面是否为有效数据，并且当页面不是有效数据时根据操作结果确定页面是否是空页面。

5. 发明授权

US10002673B2 Flash memory data storage device and programming method thereof 有权
公开(公告)号：US10002673B2
公开(公告)日：2018-06-19
申请号：US15591233
申请日：2017-05-10
申请人： Silicon Motion, Inc.
发明人： Li-Shuo Hsiao
IPC分类号： G11C16/34 , G11C16/26 , G11C16/10
CPC分类号： G11C16/34 , G06F3/0619 , G06F3/0653 , G06F3/0659 , G06F3/0679 , G06F12/02 , G11C7/106 , G11C7/1063 , G11C7/1087 , G11C16/04 , G11C16/10 , G11C16/26
摘要： A detection method for detecting a programming operation of a flash memory includes issuing a program command of the programming operation to the flash memory, by a controller, issuing a first read status command to the flash memory, by the controller, before a page program time of the flash memory has been reached, and determining whether the programming operation is performed in the flash memory according to a first memory status corresponding to the first read status command provided by the flash memory.

6. 发明授权

US09443604B2 Electronic device and data-management method thereof 有权
标题翻译：电子设备及其数据管理方法
公开(公告)号：US09443604B2
公开(公告)日：2016-09-13
申请号：US14568529
申请日：2014-12-12
申请人： Silicon Motion, Inc.
发明人： Li-Shuo Hsiao
IPC分类号： G11C7/00 , G11C16/34 , G11C16/10 , G11C29/52 , G11C29/00
CPC分类号： G11C16/3418 , G11C16/10 , G11C29/52 , G11C29/74 , G11C29/883
摘要： An exemplary embodiment provides an electronic device including a controller, a first flash memory and a second flash memory. The first flash memory stores a first data sector. The second flash memory stores a second data sector, wherein the first data sector and the second data sector are the same, and the first data is stored in a plurality of pages of the first flash memory and the second data is stored in a plurality of pages of the second flash memory. The controller produces a third data according to the first data sector and the second data sector when the controller determines that the first data sector stored in the first flash memory is damaged.
摘要翻译：示例性实施例提供了一种包括控制器，第一闪存和第二闪存的电子设备。第一闪存存储第一数据扇区。第二闪速存储器存储第二数据扇区，其中第一数据扇区和第二数据扇区相同，并且第一数据被存储在第一闪速存储器的多个页面中，并且第二数据被存储在多个第二个闪存的页面。当控制器确定存储在第一闪存中的第一数据扇区被损坏时，控制器根据第一数据扇区和第二数据扇区产生第三数据。

7. 发明授权

US09170937B2 Data storage device and operating method for flash memory 有权
标题翻译：闪存的数据存储设备和操作方法
公开(公告)号：US09170937B2
公开(公告)日：2015-10-27
申请号：US13933306
申请日：2013-07-02
申请人： Silicon Motion, Inc.
发明人： Li-Shuo Hsiao
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F11/073 , G06F11/0793
摘要： A data storage device and an operating method for a FLASH memory are disclosed. The disclosed data storage device includes a FLASH memory and a controller. The FLASH memory provides a storage space which is stored with a first storage type system information and a second storage type system information. Data recognition for the first storage type system information is stricter than that of the second storage type information. The controller reads the storage space of the FLASH memory and performs an error checking and correction process on data read from the storage space, and, based on the storage type system information, among the first and second storage type information, which first passes the error checking and correction process, the controller operates the FLASH memory.
摘要翻译：公开了一种用于闪速存储器的数据存储装置和操作方法。所公开的数据存储装置包括闪速存储器和控制器。闪存存储器提供存储有第一存储类型系统信息和第二存储类型系统信息的存储空间。第一存储类型系统信息的数据识别比第二存储类型信息的数据识别更严格。控制器读取FLASH存储器的存储空间，并对从存储空间读取的数据执行错误检查和校正处理，并且基于存储类型系统信息，在首先传递错误的第一和第二存储类型信息中检查和校正过程，控制器操作FLASH存储器。

8. 发明申请

US20190371369A1 METHOD FOR CONTROLLING OPERATIONS OF MEMORY DEVICE, ASSOCIATED MEMORY DEVICE AND CONTROLLER THEREOF, AND ASSOCIATED ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20190371369A1
公开(公告)日：2019-12-05
申请号：US16540065
申请日：2019-08-14
申请人： Silicon Motion Inc.
发明人： Yu-Wei Chyan , Li-Shuo Hsiao
IPC分类号： G11C5/14 , G11C16/08 , G11C16/24 , G06F1/3225
摘要： A method for controlling operations of a memory device, the memory device and the controller thereof, and the associated electronic device are provided. The method can comprise: before a voltage-drop event regarding a driving voltage occurs, mapping a rising reference voltage and a falling reference voltage to a first reference voltage and a second reference voltage, respectively; when the voltage-drop event occurs, pausing at least one access operation to a non-volatile (NV) memory, and mapping the rising reference voltage and the falling reference voltage to another first reference voltage and another second reference voltage, respectively; and when the voltage-drop event ends, mapping the rising reference voltage and the falling reference voltage to the first reference voltage and the second reference voltage, respectively.

9. 发明授权

US10431262B2 Method for controlling operations of memory device, associated memory device and controller thereof, and associated electronic device 有权
公开(公告)号：US10431262B2
公开(公告)日：2019-10-01
申请号：US15992160
申请日：2018-05-29
申请人： Silicon Motion Inc.
发明人： Yu-Wei Chyan , Li-Shuo Hsiao
IPC分类号： G11C5/14 , G11C16/08 , G11C16/24 , G06F1/3225 , G11C29/04
摘要： A method for controlling operations of a memory device, the memory device and the controller thereof, and the associated electronic device are provided. The method can comprise: before a voltage-drop event regarding a driving voltage occurs, mapping a rising reference voltage and a falling reference voltage to a first reference voltage and a second reference voltage, respectively; when the voltage-drop event occurs, pausing at least one access operations to a non-volatile (NV) memory, and mapping the rising reference voltage and the falling reference voltage to another first reference voltage and another second reference voltage, respectively; and when the voltage-drop event ends, mapping the rising reference voltage and the falling reference voltage to the first reference voltage and the second reference voltage, respectively.

10. 发明申请

US20190147920A1 METHOD FOR CONTROLLING OPERATIONS OF MEMORY DEVICE, ASSOCIATED MEMORY DEVICE AND CONTROLLER THEREOF, AND ASSOCIATED ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20190147920A1
公开(公告)日：2019-05-16
申请号：US15992160
申请日：2018-05-29
申请人： Silicon Motion Inc.
发明人： Yu-Wei Chyan , Li-Shuo Hsiao
IPC分类号： G11C5/14 , G11C16/08 , G06F1/32 , G11C16/24
CPC分类号： G11C5/147 , G06F1/3225 , G11C5/143 , G11C16/08 , G11C16/24 , G11C2029/0401
摘要： A method for controlling operations of a memory device, the memory device and the controller thereof, and the associated electronic device are provided. The method can comprise: before a voltage-drop event regarding a driving voltage occurs, mapping a rising reference voltage and a falling reference voltage to a first reference voltage and a second reference voltage, respectively; when the voltage-drop event occurs, pausing at least one access operations to a non-volatile (NV) memory, and mapping the rising reference voltage and the falling reference voltage to another first reference voltage and another second reference voltage, respectively; and when the voltage-drop event ends, mapping the rising reference voltage and the falling reference voltage to the first reference voltage and the second reference voltage, respectively.

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