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1. 发明授权

US06727172B1 Process to reduce chemical mechanical polishing damage of narrow copper lines 失效
标题翻译：减少铜线的化学机械抛光损伤的工艺
公开(公告)号：US06727172B1
公开(公告)日：2004-04-27
申请号：US10170242
申请日：2002-06-12
申请人： Shwangming Jong , Syun-Ming Jang , Wen-Chih Chiou
发明人： Shwangming Jong , Syun-Ming Jang , Wen-Chih Chiou
IPC分类号： H01L214763
CPC分类号： H01L21/7684
摘要： A method of forming a narrow copper line structure, embedded in an opening in an insulator layer, in which the defect count of the narrow copper line structure is minimized, has been developed. The method features a combination of processes applied to a copper layer prior to subjection of the copper layer to a chemical mechanical polishing, (CMP), procedure, used to define the narrow copper line structure. A thin compressive layer is first formed on the top surface of the copper layer, followed by a low temperature anneal. These procedures increase the number of nucleation sites, and grain size of the copper layer, resulting in less damage to the treated copper layer, as a result of a subsequent CMP procedure, when compared to counterpart copper layers, subjected to the same CMP procedure, however without experiencing the overlying, thin compressive layer, followed by the low temperature anneal.
摘要翻译：已经开发了形成窄铜线结构的方法，该方法嵌入在绝缘体层的开口中，其中窄铜线结构的缺陷计数最小化。该方法的特征是在将铜层置于用于限定窄铜线结构的化学机械抛光（CMP），程序之前，应用于铜层的工艺的组合。首先在铜层的顶表面上形成薄的压缩层，然后进行低温退火。当与对应的铜层进行相同的CMP程序时，这些步骤增加了成核位置的数量和铜层的晶粒尺寸，导致对经处理的铜层的损伤较小，作为随后的CMP程序的结果，然而没有经历上覆的薄压缩层，随后是低温退火。

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