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1. 发明授权

US08513072B2 Manufacturing method of semiconductor device with element isolation region formed within 有权
标题翻译：在其内形成元件隔离区的半导体器件的制造方法
公开(公告)号：US08513072B2
公开(公告)日：2013-08-20
申请号：US12968656
申请日：2010-12-15
申请人： Shunpei Yamazaki , Yasuyuki Arai , Ikuko Kawamata
发明人： Shunpei Yamazaki , Yasuyuki Arai , Ikuko Kawamata
IPC分类号： H01L21/336
CPC分类号： H01L27/11546 , H01L27/0207 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11526 , H01L27/1255 , H01L29/66825 , H01L29/7881
摘要： In order to form a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having a function to electrically isolate element regions from each other by repetition of PN junctions. The element isolation region is formed by selective addition of an impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and an impurity element that imparts an opposite conductivity type to that of the adjacent element region in order to electrically isolate elements from each other in one continuous semiconductor layer.
摘要翻译：为了在绝缘表面上形成多个半导体元件，在一个连续半导体层中，用作半导体元件的元件区域和具有通过重复PN结将元件区域彼此电隔离的功能的元件隔离区域。通过选择性地添加至少一种或多种氧，氮和碳的杂质元素和赋予与相邻元件区相反的导电类型的杂质元素来形成元件隔离区域，以便电隔离元件在一个连续的半导体层中彼此相交。

2. 发明申请

US20100237774A1 Lighting Device 有权
标题翻译：照明装置
公开(公告)号：US20100237774A1
公开(公告)日：2010-09-23
申请号：US12722791
申请日：2010-03-12
申请人： Shunpei Yamazaki , Yasuyuki Arai , Noriko Shibata , Yukie Suzuki , Yasuo Nakamura , Ikuko Kawamata , Yoshitaka Moriya
发明人： Shunpei Yamazaki , Yasuyuki Arai , Noriko Shibata , Yukie Suzuki , Yasuo Nakamura , Ikuko Kawamata , Yoshitaka Moriya
IPC分类号： H05B33/06
CPC分类号： H01L51/5012 , F21K9/20 , F21K9/23 , F21S8/03 , F21S8/04 , F21S41/155 , F21V21/002 , F21Y2105/00 , F21Y2115/20 , H01L33/02 , H01L33/62 , H01L51/5064 , H05B33/22 , H05B33/28
摘要： To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.
摘要翻译：为了减轻使用电致发光材料的照明装置的厚度，并且简化了使用电致发光材料的照明装置的结构，在本发明的照明装置中：将包括在照明装置中的发光元件电连接的端子器件到外部形成在与发光元件相同的表面上; 并且端子形成在基板的中心，同时发光元件堆叠。另外，照明装置具有发光元件不易劣化的结构。

3. 发明申请

US20080242051A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080242051A1
公开(公告)日：2008-10-02
申请号：US12076147
申请日：2008-03-14
申请人： Shunpei Yamazaki , Ikuko Kawamata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Ikuko Kawamata , Yasuyuki Arai
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , G11C16/0416 , G11C16/0433 , G11C16/0483 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified.
摘要翻译：当单晶半导体层从单晶半导体衬底（接合晶片）转置时，选择性地蚀刻单晶半导体衬底（该步骤也称为沟槽处理），并且多个单晶半导体层是被分割成制造的半导体元件的尺寸，被转置到不同的基板（基底）。因此，可以在基底基板上形成多个岛状单晶半导体层（SOI层）。此外，对形成在基底基板上的单晶半导体层进行蚀刻，并且通过加工和改进来精确地控制SOI层的形状。

4. 发明申请

US20070252209A1 Semiconductor device, and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US20070252209A1
公开(公告)日：2007-11-01
申请号：US11785965
申请日：2007-04-23
申请人： Shunpei Yamazaki , Yasuyuki Arai , Ikuko Kawamata
发明人： Shunpei Yamazaki , Yasuyuki Arai , Ikuko Kawamata
IPC分类号： H01L27/12
CPC分类号： H01L27/11546 , H01L27/0207 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11526 , H01L27/1255 , H01L29/66825 , H01L29/7881
摘要： In order to form a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having a function to electrically isolate element regions from each other by repetition of PN junctions. The element isolation region is formed by selective addition of an impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and an impurity element that imparts an opposite conductivity type to that of the adjacent element region in order to electrically isolate elements from each other in one continuous semiconductor layer.
摘要翻译：为了在绝缘表面上形成多个半导体元件，在一个连续半导体层中，用作半导体元件的元件区域和具有通过重复PN结将元件区域彼此电隔离的功能的元件隔离区域。通过选择性地添加至少一种或多种氧，氮和碳的杂质元素和赋予与相邻元件区相反的导电类型的杂质元素来形成元件隔离区域，以电隔离元件在一个连续的半导体层中彼此相交。

5. 发明授权

US08847480B2 Lighting device 有权
标题翻译：照明设备
公开(公告)号：US08847480B2
公开(公告)日：2014-09-30
申请号：US12722791
申请日：2010-03-12
申请人： Shunpei Yamazaki , Yasuyuki Arai , Noriko Shibata , Yukie Suzuki , Yasuo Nakamura , Ikuko Kawamata , Yoshitaka Moriya
发明人： Shunpei Yamazaki , Yasuyuki Arai , Noriko Shibata , Yukie Suzuki , Yasuo Nakamura , Ikuko Kawamata , Yoshitaka Moriya
IPC分类号： H01L51/50 , H05B33/22 , H05B33/28
CPC分类号： H01L51/5012 , F21K9/20 , F21K9/23 , F21S8/03 , F21S8/04 , F21S41/155 , F21V21/002 , F21Y2105/00 , F21Y2115/20 , H01L33/02 , H01L33/62 , H01L51/5064 , H05B33/22 , H05B33/28
摘要： To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.
摘要翻译：为了减轻使用电致发光材料的照明装置的厚度，并且简化了使用电致发光材料的照明装置的结构，在本发明的照明装置中：将包括在照明装置中的发光元件电连接的端子器件到外部形成在与发光元件相同的表面上; 并且端子形成在基板的中心，同时发光元件堆叠。另外，照明装置具有发光元件不易劣化的结构。

6. 发明申请

US20100120226A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20100120226A1
公开(公告)日：2010-05-13
申请号：US12692790
申请日：2010-01-25
申请人： Shunpei Yamazaki , Ikuko Kawamata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Ikuko Kawamata , Yasuyuki Arai
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , G11C16/0416 , G11C16/0433 , G11C16/0483 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified.

7. 发明授权

US07947981B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07947981B2
公开(公告)日：2011-05-24
申请号：US12013796
申请日：2008-01-14
申请人： Shunpei Yamazaki , Ikuko Kawamata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Ikuko Kawamata , Yasuyuki Arai
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , G02F1/1345 , G02F1/13454 , H01L27/1233 , H01L29/78621
摘要： It is an object to provide a display device including a thin film transistor which can operate at high speed and is driven at a low voltage in a drive circuit region, and a thin film transistor having high voltage-resistance and high reliability in a pixel region. Accordingly, it is an object to provide a high reliable display device which consumes less power. A display device including a pixel region and a drive circuit region over a substrate having an insulating surface is provided. A thin film transistor is provided in each of the pixel region and the drive circuit region. A channel formation region in a semiconductor layer of the thin film transistor provided in the drive circuit region is formed to be locally thin, and the thickness of the channel formation region is smaller than that in the pixel region.
摘要翻译：本发明的目的是提供一种显示装置，其包括可以在驱动电路区域中以高速操作并以低电压驱动的薄膜晶体管，以及在像素区域中具有高电压和高可靠性的薄膜晶体管。因此，本发明的目的是提供一种消耗较少功率的高可靠性显示装置。提供一种显示装置，其包括具有绝缘表面的基板上的像素区域和驱动电路区域。在像素区域和驱动电路区域的每一个中设置薄膜晶体管。设置在驱动电路区域中的薄膜晶体管的半导体层中的沟道形成区域局部变薄，并且沟道形成区域的厚度小于像素区域中的沟道形成区域。

8. 发明申请

US20100277443A1 Electronic Book 有权
标题翻译：电子书
公开(公告)号：US20100277443A1
公开(公告)日：2010-11-04
申请号：US12769266
申请日：2010-04-28
申请人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Ikuko Kawamata , Atsushi Miyaguchi , Yoshitaka Moriya
发明人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Ikuko Kawamata , Atsushi Miyaguchi , Yoshitaka Moriya
IPC分类号： G09G5/00
CPC分类号： G06F1/1652 , G02F1/133305 , G02F1/13452 , G02F1/1368 , G06F1/1616 , G06F1/1635 , G06F1/1643 , G06F1/1647 , G06F3/1423 , G06F3/147 , G09G3/20 , G09G3/2096 , G09G3/3225 , G09G3/344 , G09G3/3648 , G09G5/003 , G09G2300/08 , G09G2310/0218 , G09G2310/0267 , G09G2310/0275 , G09G2310/0281 , G09G2330/02 , G09G2330/021 , G09G2360/144 , G09G2380/02 , G09G2380/14
摘要： An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion.
摘要翻译：禁止在处理柔性面板时破坏驱动电路的电子书阅读器。另外，具有简化结构的电子书阅读器。包括多个柔性显示面板，每个柔性显示面板包括由扫描线驱动电路和信号线驱动电路进行显示控制的显示部分和将多个显示面板固定在一起的装订部分。信号线驱动电路设置在装订部分的内部，扫描线驱动电路在垂直于装订部分的方向设在显示面板的边缘。

9. 发明授权

US07811884B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07811884B2
公开(公告)日：2010-10-12
申请号：US12692790
申请日：2010-01-25
申请人： Shunpei Yamazaki , Ikuko Kawamata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Ikuko Kawamata , Yasuyuki Arai
IPC分类号： H01L21/336
CPC分类号： H01L21/76254 , G11C16/0416 , G11C16/0433 , G11C16/0483 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified.
摘要翻译：当单晶半导体层从单晶半导体衬底（接合晶片）转置时，选择性地蚀刻单晶半导体衬底（该步骤也称为沟槽处理），并且多个单晶半导体层是被分割成制造的半导体元件的尺寸，被转置到不同的基板（基底）。因此，可以在基底基板上形成多个岛状单晶半导体层（SOI层）。此外，对形成在基底基板上的单晶半导体层进行蚀刻，并且通过加工和改进来精确地控制SOI层的形状。

10. 发明授权

US07682931B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US07682931B2
公开(公告)日：2010-03-23
申请号：US12076147
申请日：2008-03-14
申请人： Shunpei Yamazaki , Ikuko Kawamata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Ikuko Kawamata , Yasuyuki Arai
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , G11C16/0416 , G11C16/0433 , G11C16/0483 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified.

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