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1. 发明授权

US08198629B2 Photoelectric conversion device and method for manufacturing the same 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US08198629B2
公开(公告)日：2012-06-12
申请号：US13023601
申请日：2011-02-09
申请人： Shunpei Yamazaki , Satoshi Toriumi , Tomokazu Yokoi , Makoto Furuno
发明人： Shunpei Yamazaki , Satoshi Toriumi , Tomokazu Yokoi , Makoto Furuno
IPC分类号： H01L31/00
CPC分类号： H01L31/03685 , H01L31/03762 , H01L31/1816 , Y02E10/545 , Y02E10/548
摘要： To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.
摘要翻译：提供具有改善的光电转换特性和成本竞争力的光电转换装置。包括半导体结的光电转换装置具有使针状晶体在杂质半导体层上生长的半导体层。杂质半导体层由微晶半导体形成，并且包括赋予一种导电类型的杂质。通过将稀释气体（通常为硅烷）的流量设定为沉积时的半导体源气体（通常为氢）的流量的1倍至6倍，将非晶半导体层沉积在微晶半导体层上。因此，使得在膜的沉积方向即从微晶半导体层到非晶半导体层的方向上渐缩的三维形状的晶体生长。

2. 发明授权

US07888167B2 Photoelectric conversion device and method for manufacturing the same 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US07888167B2
公开(公告)日：2011-02-15
申请号：US12422577
申请日：2009-04-13
申请人： Shunpei Yamazaki , Satoshi Toriumi , Tomokazu Yokoi , Makoto Furuno
发明人： Shunpei Yamazaki , Satoshi Toriumi , Tomokazu Yokoi , Makoto Furuno
IPC分类号： H01L21/00
CPC分类号： H01L31/03685 , H01L31/03762 , H01L31/1816 , Y02E10/545 , Y02E10/548
摘要： To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.
摘要翻译：提供具有改善的光电转换特性和成本竞争力的光电转换装置。包括半导体结的光电转换装置具有使针状晶体在杂质半导体层上生长的半导体层。杂质半导体层由微晶半导体形成，并且包括赋予一种导电类型的杂质。通过将稀释气体（通常为硅烷）的流量设定为沉积时的半导体源气体（通常为氢）的流量的1倍至6倍，将非晶半导体层沉积在微晶半导体层上。因此，使得在膜的沉积方向即从微晶半导体层到非晶半导体层的方向上渐缩的三维形状的晶体生长。

3. 发明授权

US07611930B2 Method of manufacturing display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07611930B2
公开(公告)日：2009-11-03
申请号：US12186001
申请日：2008-08-05
申请人： Shunpei Yamazaki , Sachiaki Teduka , Makoto Furuno , Satoshi Toriumi , Yasuhiro Jinbo , Koji Dairiki
发明人： Shunpei Yamazaki , Sachiaki Teduka , Makoto Furuno , Satoshi Toriumi , Yasuhiro Jinbo , Koji Dairiki
IPC分类号： H01L21/84
CPC分类号： H01L29/04 , H01L21/0262 , H01L27/1222 , H01L27/127 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10−5 Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.
摘要翻译：在形成底栅极薄膜晶体管的情况下，进行通过等离子体CVD法在栅极绝缘膜上形成微晶半导体膜的步骤，以及在微晶半导体膜上形成非晶半导体膜的步骤。在形成微晶半导体膜的步骤中，反应室中的压力设定为10-5Pa以下，基板温度设定在120℃〜220℃的范围内，等离子体由引入氢气和硅气体，使氢等离子体作用于形成在栅极绝缘膜的表面上的反应产物，以在进行成膜的同时进行除去。此外，通过施加VHF频带的第一高频电力，VHF频带的第二高频电力彼此叠加而产生等离子体。

4. 发明授权

US08263421B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08263421B2
公开(公告)日：2012-09-11
申请号：US12944841
申请日：2010-11-12
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： C23C16/515 , C23C16/509 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.
摘要翻译：本发明的目的是提供一种在大面积基板上具有优良质量的微晶半导体膜的制造方法。在栅电极上形成栅极绝缘膜之后，为了提高在初始阶段形成的微晶半导体膜的质量，通过提供具有不同频率的高频功率并且膜的下部附近产生辉光放电等离子体在第一成膜条件下形成具有栅极绝缘膜的界面，其成膜速率低，但是导致良好的膜质量。此后，在成膜速度较高的第二成膜条件下沉积膜的上部，并且还在微晶半导体膜上层叠缓冲层。

5. 发明授权

US07833845B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07833845B2
公开(公告)日：2010-11-16
申请号：US12222547
申请日：2008-08-12
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： C23C16/515 , C23C16/509 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.
摘要翻译：本发明的目的是提供一种在大面积基板上具有优良质量的微晶半导体膜的制造方法。在栅电极上形成栅极绝缘膜之后，为了提高在初始阶段形成的微晶半导体膜的质量，通过提供具有不同频率的高频功率并且膜的下部附近产生辉光放电等离子体在第一成膜条件下形成具有栅极绝缘膜的界面，其成膜速率低，但是导致良好的膜质量。此后，在成膜速度较高的第二成膜条件下沉积膜的上部，并且还在微晶半导体膜上层叠缓冲层。

6. 发明申请

US20090047761A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20090047761A1
公开(公告)日：2009-02-19
申请号：US12222547
申请日：2008-08-12
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/00
CPC分类号： C23C16/515 , C23C16/509 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.
摘要翻译：本发明的目的是提供一种在大面积基板上具有优良质量的微晶半导体膜的制造方法。在栅电极上形成栅极绝缘膜之后，为了提高在初始阶段形成的微晶半导体膜的质量，通过提供具有不同频率的高频功率并且膜的下部附近产生辉光放电等离子体在第一成膜条件下形成具有栅极绝缘膜的界面，其成膜速率低，但是导致良好的膜质量。此后，在成膜速度较高的第二成膜条件下沉积膜的上部，并且还在微晶半导体膜上层叠缓冲层。

7. 发明申请

US20090047759A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090047759A1
公开(公告)日：2009-02-19
申请号：US12222109
申请日：2008-08-01
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/0262 , H01L21/67207 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.
摘要翻译：在栅电极上形成栅极绝缘膜之后，为了提高在沉积的早期形成的微晶半导体膜的质量，在第一沉积条件下形成与栅极绝缘膜的界面附近的膜其中沉积速率低，但是要形成的膜的质量高，然后在沉积速率高的第二沉积条件下进一步沉积膜。然后，形成与微晶半导体膜接触的缓冲层。此外，在用于除去基板上的吸附水的第一沉积条件下，在形成膜之前，进行诸如氩气或氢等离子体处理的稀有气体的等离子体处理。

8. 发明申请

US20120135302A1 SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING THE SAME, AND POWER STORAGE DEVICE 有权
标题翻译：半导体膜，其制造方法和电力存储装置
公开(公告)号：US20120135302A1
公开(公告)日：2012-05-31
申请号：US13301020
申请日：2011-11-21
申请人： Tomokazu Yokoi , Takayuki Inoue , Makoto Furuno
发明人： Tomokazu Yokoi , Takayuki Inoue , Makoto Furuno
IPC分类号： H01M4/13 , H01L21/28 , H01M4/02 , H01L29/02
CPC分类号： H01L29/12 , H01M4/0428 , H01M4/134 , H01M4/366 , H01M4/386
摘要： Provided are a semiconductor film including silicon microstructures formed at high density, and a manufacturing method thereof. Further, provided are a semiconductor film including silicon microstructures whose density is controlled, and a manufacturing method thereof Furthermore, a power storage device with improved charge-discharge capacity is provided. A manufacturing method in which a semiconductor film with a silicon layer including silicon structures is formed over a substrate with a metal surface is used. The thickness of a silicide layer formed by reaction between the metal and the silicon is controlled, so that the grain sizes of silicide grains formed at an interface between the silicide layer and the silicon layer are controlled and the shapes of the silicon structures are controlled. Such a semiconductor film can be applied to an electrode of a power storage device.
摘要翻译：提供了包括以高密度形成的硅微结构的半导体膜及其制造方法。此外，提供了包括其密度被控制的硅微结构的半导体膜及其制造方法。此外，提供了具有改善的充放电容量的蓄电装置。使用其中在具有金属表面的基板上形成具有包括硅结构的硅层的半导体膜的制造方法。控制由金属与硅之间的反应形成的硅化物层的厚度，从而控制在硅化物层和硅层之间的界面处形成的硅化物晶粒的晶粒尺寸，并且控制硅结构的形状。这样的半导体膜可以应用于蓄电装置的电极。

9. 发明授权

US08455044B2 Semiconductor film, method for manufacturing the same, and power storage device 有权
标题翻译：半导体膜及其制造方法以及蓄电装置
公开(公告)号：US08455044B2
公开(公告)日：2013-06-04
申请号：US13301020
申请日：2011-11-21
申请人： Tomokazu Yokoi , Takayuki Inoue , Makoto Furuno
发明人： Tomokazu Yokoi , Takayuki Inoue , Makoto Furuno
IPC分类号： B05D5/12
CPC分类号： H01L29/12 , H01M4/0428 , H01M4/134 , H01M4/366 , H01M4/386
摘要： Provided are a semiconductor film including silicon microstructures formed at high density, and a manufacturing method thereof. Further, provided are a semiconductor film including silicon microstructures whose density is controlled, and a manufacturing method thereof. Furthermore, a power storage device with improved charge-discharge capacity is provided. A manufacturing method in which a semiconductor film with a silicon layer including silicon structures is formed over a substrate with a metal surface is used. The thickness of a silicide layer formed by reaction between the metal and the silicon is controlled, so that the grain sizes of silicide grains formed at an interface between the silicide layer and the silicon layer are controlled and the shapes of the silicon structures are controlled. Such a semiconductor film can be applied to an electrode of a power storage device.
摘要翻译：提供了包括以高密度形成的硅微结构的半导体膜及其制造方法。此外，提供了包括其密度被控制的硅微结构的半导体膜及其制造方法。此外，提供了具有改善的充放电容量的蓄电装置。使用其中在具有金属表面的基板上形成具有包括硅结构的硅层的半导体膜的制造方法。控制由金属与硅之间的反应形成的硅化物层的厚度，从而控制在硅化物层和硅层之间的界面处形成的硅化物晶粒的晶粒尺寸，并且控制硅结构的形状。这样的半导体膜可以应用于蓄电装置的电极。

10. 发明授权

US08518761B2 Deposition method and method for manufacturing semiconductor device 有权
公开(公告)号：US08518761B2
公开(公告)日：2013-08-27
申请号：US13085518
申请日：2011-04-13
申请人： Shunpei Yamazaki , Junichiro Sakata , Makoto Furuno
发明人： Shunpei Yamazaki , Junichiro Sakata , Makoto Furuno
IPC分类号： H01L21/00
CPC分类号： H01L21/02266 , C23C14/0036 , C23C14/08 , C23C14/3407 , C23C14/3414 , H01L21/02112 , H01L21/8232 , H01L27/0688 , H01L27/11521 , H01L27/11551 , H01L27/1156 , H01L27/1207 , H01L27/1225 , H01L27/1251 , H01L28/60 , H01L29/4908 , H01L29/66477 , H01L29/66742 , H01L29/66969 , H01L29/78645 , H01L29/7869
摘要： An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

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