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1. 发明授权

US07566640B2 Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device 有权
标题翻译：制造薄膜集成电路器件的方法，非接触式薄膜集成电路器件及其制造方法，以及包含非接触式薄膜集成电路器件
公开(公告)号：US07566640B2
公开(公告)日：2009-07-28
申请号：US10581674
申请日：2004-12-14
申请人： Shunpei Yamazaki , Miho Komori , Yurika Satou , Kazue Hosoki , Kaori Ogita
发明人： Shunpei Yamazaki , Miho Komori , Yurika Satou , Kazue Hosoki , Kaori Ogita
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , G06K19/07749 , G06K19/0776 , H01L27/1214 , H01L27/13 , H01L29/66757
摘要： To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.
摘要翻译：为了提供以低成本批量生产的薄膜集成电路，根据本发明的薄膜集成电路的制造方法包括以下步骤：在衬底上形成剥离层; 在剥离层上形成基膜; 在所述基膜上形成多个薄膜集成电路; 在所述多个薄膜集成电路之间的边界处形成沟槽; 并将含有卤素氟化物的气体或液体引入槽中，从而除去剥离层; 因此，多个薄膜集成电路彼此分离。

2. 发明授权

US08202238B2 Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device 有权
标题翻译：制造薄膜集成电路器件的方法，非接触式薄膜集成电路器件及其制造方法，以及包含非接触式薄膜集成电路器件
公开(公告)号：US08202238B2
公开(公告)日：2012-06-19
申请号：US12507254
申请日：2009-07-22
申请人： Shunpei Yamazaki , Miho Komori , Yurika Satou , Kazue Hosoki , Kaori Ogita
发明人： Shunpei Yamazaki , Miho Komori , Yurika Satou , Kazue Hosoki , Kaori Ogita
IPC分类号： A61F15/00 , A61F13/00
CPC分类号： H01L27/1266 , G06K19/07749 , G06K19/0776 , H01L27/1214 , H01L27/13 , H01L29/66757
摘要： A thin film integrated circuit which is mass produced at low cost and a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.
摘要翻译：根据本发明的以低成本批量生产的薄膜集成电路和薄膜集成电路的制造方法包括以下步骤：在衬底上形成剥离层; 在剥离层上形成基膜; 在所述基膜上形成多个薄膜集成电路; 在所述多个薄膜集成电路之间的边界处形成沟槽; 并将含有卤素氟化物的气体或液体引入槽中，从而除去剥离层; 因此，多个薄膜集成电路彼此分离。

3. 发明申请

US20070166954A1 Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device 有权
标题翻译：制造薄膜集成电路器件的方法，非接触式薄膜集成电路器件及其制造方法，以及包含非接触式薄膜集成电路器件
公开(公告)号：US20070166954A1
公开(公告)日：2007-07-19
申请号：US10581674
申请日：2004-12-14
申请人： Shunpei Yamazaki , Miho Komori , Yurika Satou , Kazue Hosoki , Kaori Ogita
发明人： Shunpei Yamazaki , Miho Komori , Yurika Satou , Kazue Hosoki , Kaori Ogita
IPC分类号： H01L21/76
CPC分类号： H01L27/1266 , G06K19/07749 , G06K19/0776 , H01L27/1214 , H01L27/13 , H01L29/66757
摘要： To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer, forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.
摘要翻译：为了提供以低成本批量生产的薄膜集成电路，根据本发明的薄膜集成电路的制造方法包括以下步骤：在衬底上形成剥离层; 在剥离层上形成基膜，在基膜上形成多个薄膜集成电路; 在所述多个薄膜集成电路之间的边界处形成沟槽; 并将含有卤素氟化物的气体或液体引入槽中，从而除去剥离层; 因此，多个薄膜集成电路彼此分离。

4. 发明授权

US07298347B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07298347B2
公开(公告)日：2007-11-20
申请号：US10347241
申请日：2003-01-21
申请人： Shunpei Yamazaki , Jun Koyama , Kazue Hosoki
发明人： Shunpei Yamazaki , Jun Koyama , Kazue Hosoki
IPC分类号： G09G3/14
CPC分类号： G09G3/3233 , G09G3/2022 , G09G2300/0842 , G09G2310/027 , G09G2320/029 , G09G2320/041 , G09G2320/043 , G09G2320/045
摘要： The image quality of a display device using a bottom gate TFT is improved. In particular, fluctuation in luminance is controlled and the frequency characteristic of a driver circuit is compensated by suppressing a change in amount of current flowing through an EL element which is caused by a change in surrounding temperature while the device is in use. A monitoring EL element is provided in addition to a pixel portion EL element. The monitoring EL element constitutes a temperature compensation circuit together with a buffer amplifier and the like. A current is supplied to the pixel portion EL element through the temperature compensation circuit. This makes it possible to keep the amount of current flowing through the pixel portion EL element constant against a change in temperature, and to control the fluctuation in luminance. An input signal is subjected to time base expansion to perform sampling with accuracy.
摘要翻译：使用底栅TFT的显示装置的图像质量得到改善。特别地，控制亮度的波动，并且通过抑制在器件使用期间由周围温度的变化引起的流过EL元件的电流量的变化来补偿驱动电路的频率特性。除了像素部分EL元件之外还提供监视EL元件。监视用EL元件与缓冲放大器等一起构成温度补偿电路。通过温度补偿电路将电流提供给像素部分EL元件。这使得可以保持流经像素部分EL元件的电流量相对于温度变化恒定，并且控制亮度的波动。对输入信号进行时基扩展，以进行准确的采样。

5. 发明授权

US06528951B2 Display device 有权
公开(公告)号：US06528951B2
公开(公告)日：2003-03-04
申请号：US09878312
申请日：2001-06-12
申请人： Shunpei Yamazaki , Jun Koyama , Kazue Hosoki
发明人： Shunpei Yamazaki , Jun Koyama , Kazue Hosoki
IPC分类号： G09G330
CPC分类号： G09G3/3233 , G09G3/2022 , G09G2300/0842 , G09G2310/027 , G09G2320/029 , G09G2320/041 , G09G2320/043 , G09G2320/045
摘要： The image quality of a display device using a bottom gate TFT is improved. In particular, fluctuation in luminance is controlled and the frequency characteristic of a driver circuit is compensated by suppressing a change in amount of current flowing through an EL element which is caused by a change in surrounding temperature while the device is in use. A monitoring EL element is provided in addition to a pixel portion EL element. The monitoring EL element constitutes a temperature compensation circuit together with a buffer amplifier and the like. A current is supplied to the pixel portion EL element through the temperature compensation circuit. This makes it possible to keep the amount of current flowing through the pixel portion EL element constant against a change in temperature, and to control the fluctuation in luminance. An input signal is subjected to time base expansion to perform sampling with accuracy.

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