专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08552423B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08552423B2
公开(公告)日：2013-10-08
申请号：US12835903
申请日：2010-07-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Tatsuya Takahashi
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Tatsuya Takahashi
IPC分类号： H01L29/10
CPC分类号： H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
摘要翻译：半导体器件的开口率提高。驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层层。栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

2. 发明授权

US08698143B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08698143B2
公开(公告)日：2014-04-15
申请号：US13567327
申请日：2012-08-06
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Tatsuya Takahashi
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Tatsuya Takahashi
IPC分类号： H01L29/04
CPC分类号： H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
摘要翻译：半导体器件的开口率提高。驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层层。栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

3. 发明授权

US08648343B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08648343B2
公开(公告)日：2014-02-11
申请号：US12839519
申请日：2010-07-20
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Ikuko Kawamata
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Ikuko Kawamata
IPC分类号： H01L27/12
CPC分类号： H01L27/1225 , H01L27/124
摘要： An object is to increase the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using a metal and a channel layer is formed using an oxide semiconductor, and a driver circuit wiring formed using a metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode and a drain electrode are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor, and a display portion wiring formed using an oxide conductor. The thin film transistors provided in the semiconductor device are formed with a resist mask formed using a multi-tone mask.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且使用氧化物半导体形成沟道层，以及使用金属。显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源电极和漏电极，并且使用氧化物半导体形成半导体层，以及使用氧化物导体形成的显示部分布线。设置在半导体器件中的薄膜晶体管形成有使用多色调掩模形成的抗蚀剂掩模。

4. 发明授权

US08643018B2 Semiconductor device comprising a pixel portion and a driver circuit 有权
标题翻译：半导体器件包括像素部分和驱动器电路
公开(公告)号：US08643018B2
公开(公告)日：2014-02-04
申请号：US13616019
申请日：2012-09-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Hideki Uochi
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Hideki Uochi
IPC分类号： H01L29/04 , H01L29/10 , H01L27/14 , H01L27/12
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/45
摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。用于驱动电路的薄膜晶体管的源极和漏极由金属形成。使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。

5. 发明授权

US08293594B2 Method for manufacturing a display device having oxide semiconductor layer 有权
标题翻译：具有氧化物半导体层的显示装置的制造方法
公开(公告)号：US08293594B2
公开(公告)日：2012-10-23
申请号：US12835907
申请日：2010-07-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Hideki Uochi
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Hideki Uochi
IPC分类号： H01L21/84
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/45
摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。用于驱动电路的薄膜晶体管的源极和漏极由金属形成。使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。

6. 发明授权

US08729550B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08729550B2
公开(公告)日：2014-05-20
申请号：US12835906
申请日：2010-07-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
IPC分类号： H01L29/10
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1225 , H01L27/1262 , H01L29/45 , H01L29/78606 , H01L29/7869
摘要： An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.
摘要翻译：目的是降低半导体器件的制造成本。目的是提高半导体器件的开口率。目的是使半导体器件的显示部分显示更高清晰度的图像。目的在于提供一种可以高速运转的半导体装置。该半导体器件包括一个基板上的驱动电路部分和显示部分。驱动器电路部分包括：使用金属形成源电极和漏极的驱动电路TFT，并且使用氧化物半导体形成沟道层; 以及使用金属形成的驱动电路布线。显示部分包括：使用氧化物导体形成源极和漏极的像素TFT，并且使用氧化物半导体形成半导体层; 以及使用氧化物导体形成的显示布线。

7. 发明授权

US08242496B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08242496B2
公开(公告)日：2012-08-14
申请号：US12835117
申请日：2010-07-13
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Ikuko Kawamata
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Ikuko Kawamata
IPC分类号： H01L29/786
CPC分类号： H01L27/1251 , G02F1/13454 , G02F2201/40 , G02F2202/10 , H01L27/1225 , H01L27/1233
摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用氧化物导体。

8. 发明授权

US08994024B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08994024B2
公开(公告)日：2015-03-31
申请号：US12835905
申请日：2010-07-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
IPC分类号： H01L29/04 , H01L27/12 , H01L29/45
CPC分类号： H01L27/124 , H01L27/1225 , H01L29/45
摘要： A highly reliable display device which has high aperture ratio and includes a transistor with stable electrical characteristics is manufactured. The display device includes a driver circuit portion and a display portion over the same substrate. The driver circuit portion includes a driver circuit transistor and a driver circuit wiring. A source electrode and a drain electrode of the driver circuit transistor are formed using a metal. A channel layer of the driver circuit transistor is formed using an oxide semiconductor. The driver circuit wiring is formed using a metal. The display portion includes a pixel transistor and a display portion wiring. A source electrode and a drain electrode of the pixel transistor are formed using a transparent oxide conductor. A semiconductor layer of the pixel transistor is formed using the oxide semiconductor. The display portion wiring is formed using a transparent oxide conductor.
摘要翻译：制造具有高开口率并且包括具有稳定电特性的晶体管的高度可靠的显示装置。显示装置包括在同一基板上的驱动电路部分和显示部分。驱动器电路部分包括驱动电路晶体管和驱动电路布线。使用金属形成驱动电路晶体管的源电极和漏电极。使用氧化物半导体形成驱动电路晶体管的沟道层。驱动电路布线使用金属形成。显示部分包括像素晶体管和显示部分布线。使用透明氧化物导体形成像素晶体管的源电极和漏电极。使用氧化物半导体形成像素晶体管的半导体层。显示部分布线使用透明氧化物导体形成。

9. 发明授权

US08445905B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08445905B2
公开(公告)日：2013-05-21
申请号：US13567451
申请日：2012-08-06
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Ikuko Kawamata
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Ikuko Kawamata
IPC分类号： H01L29/10
CPC分类号： H01L27/1251 , G02F1/13454 , G02F2201/40 , G02F2202/10 , H01L27/1225 , H01L27/1233
摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用氧化物导体。

10. 发明授权

US08378343B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08378343B2
公开(公告)日：2013-02-19
申请号：US12835119
申请日：2010-07-13
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Mari Terashima
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Mari Terashima
IPC分类号： H01L29/10
CPC分类号： H01L27/124 , G02F1/13454 , G02F2201/40 , G02F2202/10 , H01L27/1225
摘要： A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion.
摘要翻译：提供一种半导体器件，其中在一个衬底上设置每个包括薄膜晶体管的像素部分和驱动器电路; 像素部分中的薄膜晶体管包括栅极电极层，栅极绝缘层，具有小厚度的端部区域的氧化物半导体层，与氧化物半导体层的一部分接触的氧化物绝缘层，源极和漏极层和像素电极层; 像素部分中的薄膜晶体管具有透光性; 并且使用具有比像素部分中的源极和漏极电极层的材料更低的电阻的导电材料形成驱动电路部分中的薄膜晶体管的源极和漏极电极层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式