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1. 发明授权

US08816349B2 Semiconductor device comprising oxide semiconductor layer 有权
标题翻译：包括氧化物半导体层的半导体器件
公开(公告)号：US08816349B2
公开(公告)日：2014-08-26
申请号：US12898357
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
IPC分类号： H01L27/14
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/324 , H01L21/76801 , H01L21/76828 , H01L21/76838 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606
摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译：通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以防止因此，可以制造高度可靠的半导体器件。具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

2. 发明授权

US08344374B2 Semiconductor device comprising oxide semiconductor layer 有权
标题翻译：包括氧化物半导体层的半导体器件
公开(公告)号：US08344374B2
公开(公告)日：2013-01-01
申请号：US12898366
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
IPC分类号： H01L29/10
CPC分类号： H01L29/78669 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78678 , H01L29/7869
摘要： It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.
摘要翻译：本发明的目的是提供一种由具有良好的显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有诸如电压降等的不利影响防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是连接到具有抑制的杂质浓度的氧化物半导体层。另外，包含氧化物半导体的薄膜晶体管也可以被要被密封的绝缘膜包围。

3. 发明申请

US20110084268A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110084268A1
公开(公告)日：2011-04-14
申请号：US12898366
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
IPC分类号： H01L29/12 , H01L21/16
CPC分类号： H01L29/78669 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78678 , H01L29/7869
摘要： It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.
摘要翻译：本发明的目的是提供一种由具有良好的显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有诸如电压降等的不利影响防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是连接到具有抑制的杂质浓度的氧化物半导体层。另外，包含氧化物半导体的薄膜晶体管也可以被要被密封的绝缘膜包围。

4. 发明申请

US20110084267A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110084267A1
公开(公告)日：2011-04-14
申请号：US12898357
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
IPC分类号： H01L29/12 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/324 , H01L21/76801 , H01L21/76828 , H01L21/76838 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606
摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译：通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以防止因此，可以制造高度可靠的半导体器件。具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

5. 发明申请

US20110084337A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110084337A1
公开(公告)日：2011-04-14
申请号：US12898345
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Hideki Uochi , Yasuo Nakamura , Junpei Sugao
发明人： Shunpei Yamazaki , Jun Koyama , Hideki Uochi , Yasuo Nakamura , Junpei Sugao
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L27/12 , H01L27/124
摘要： As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译：对于以显示装置为代表的半导体装置，其目的在于提供一种高可靠性的可应用大尺寸或高清晰度屏幕的高可靠性半导体装置，其具有高显示质量并且稳定地工作。通过使用包含Cu作为长引线的导电层，可以抑制布线电阻的增加。此外，包括Cu的导电层以与形成TFT的沟道区域的半导体层不重叠并且被包括氮化硅的绝缘层包围的方式设置，由此可以防止Cu的扩散 ; 因此，可以制造高度可靠的半导体器件。具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

6. 发明授权

US08253144B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08253144B2
公开(公告)日：2012-08-28
申请号：US12898345
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Hideki Uochi , Yasuo Nakamura , Junpei Sugao
发明人： Shunpei Yamazaki , Jun Koyama , Hideki Uochi , Yasuo Nakamura , Junpei Sugao
IPC分类号： H01L27/14
CPC分类号： H01L27/12 , H01L27/124
摘要： As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译：对于以显示装置为代表的半导体装置，其目的在于提供一种高可靠性的可应用大尺寸或高清晰度屏幕的高可靠性半导体装置，其具有高显示质量并且稳定地工作。通过使用包含Cu作为长引线的导电层，可以抑制布线电阻的增加。此外，包括Cu的导电层以与形成TFT的沟道区域的半导体层不重叠并且被包括氮化硅的绝缘层包围的方式设置，由此可以防止Cu的扩散 ; 因此，可以制造高度可靠的半导体器件。具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

7. 发明授权

US07375401B2 Static random access memory using thin film transistors 失效
标题翻译：使用薄膜晶体管的静态随机存取存储器
公开(公告)号：US07375401B2
公开(公告)日：2008-05-20
申请号：US11151290
申请日：2005-06-14
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Jun Koyama , Takeshi Fukunaga
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Jun Koyama , Takeshi Fukunaga
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L27/0688 , G02F1/1362 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1112 , H01L27/1248 , H01L27/1277 , H01L29/04 , H01L29/66772 , H01L29/78654 , H01L31/076 , H01L31/1824 , H01L31/1872 , H01L2924/0002 , Y02E10/545 , Y02E10/548 , Y02P70/521 , Y10S257/903 , Y10S257/904 , H01L2924/00
摘要： A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
摘要翻译：形成具有侧向生长区域的半导体薄膜，该横向生长区域是大体平行于基底延伸的柱状或针状晶体的集合。半导体薄膜用具有等效能量的激光或强光照射。结果，相邻的柱状或针状结晶结合在一起形成基本上不具有晶界的区域，即基本上被认为是单晶的单畴区域。通过使用单畴区域作为有源层形成半导体器件。

8. 发明申请

US20070252206A1 SEMICONDUCTOR THIN FILM AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体薄膜及其制造方法和半导体器件及其制造方法
公开(公告)号：US20070252206A1
公开(公告)日：2007-11-01
申请号：US11670462
申请日：2007-02-02
申请人： Shunpei Yamazaki , Jun Koyama , Akiharu Miyanaga , Takeshi Fukunaga
发明人： Shunpei Yamazaki , Jun Koyama , Akiharu Miyanaga , Takeshi Fukunaga
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/02672 , G02B27/017 , G02B2027/0138 , H01L21/02532 , H01L21/2022 , H01L21/8221 , H01L27/1277 , H01L29/045 , H01L29/665 , H01L29/66757 , H01L29/78621 , H01L29/78654 , H01L29/78675
摘要： A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.
摘要翻译：薄膜半导体晶体管结构具有具有电介质表面的基板和由半导体薄膜制成的有源层，其表现出与单晶相当的结晶度。为了制造晶体管，在衬底上形成半导体薄膜，该薄膜包括可以是基本上平行于衬底的柱状晶体和/或毛细晶体的多个晶体的混合物。然后在所选择的含有卤素的气氛中对所得结构进行热氧化，从而去除膜中所含的任何金属元素。这可以形成单畴区域，其中单个柱状或毛细晶体晶体与任何相邻的晶体接触，并且其能够基本上被认为是单晶区域，而不存在或包含任何晶粒边界。该区域用于形成晶体管的有源层。

9. 发明授权

US06458637B1 Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same 失效
标题翻译：薄膜半导体及其制造方法，半导体装置及其制造方法
公开(公告)号：US06458637B1
公开(公告)日：2002-10-01
申请号：US09916789
申请日：2001-07-27
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Jun Koyama , Takeshi Fukunaga
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Jun Koyama , Takeshi Fukunaga
IPC分类号： H01L2100
CPC分类号： H01L21/02675 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L27/1281 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675
摘要： The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provided in contact with the lower surface of an amorphous silicon film, whereby at least a site is formed in which a metal element for accelerating crystallization can be segregated. Therefore, a crystal nuclei is selectively formed in a portion where the concave or convex pattern is located, which carries out controlling a crystal diameter. Thus, a crystalline silicon film is obtained. A crystallinity of the crystalline silicon film is improved by the irradiation of a laser light or an intense light having an energy equivalent to that of the laser light, whereby a monodomain region in which no grain boundary substantially exit is formed.
摘要翻译：本发明涉及可以被认为是单晶的薄膜半导体和包括由薄膜半导体形成的有源层的半导体器件。在与非晶硅膜的下表面接触的绝缘膜上有意形成凹凸图案，由此形成至少一个可以分离用于加速结晶的金属元素的部位。因此，在凹凸图案所在的部分中选择性地形成晶体核，其实现晶体直径的控制。因此，得到结晶硅膜。通过照射具有与激光的能量相当的能量的激光或强光，提高了结晶硅膜的结晶度，从而形成了没有晶界基本上排出的单畴区域。

10. 发明授权

US06452211B1 Semiconductor thin film and semiconductor device 失效
标题翻译：半导体薄膜和半导体器件
公开(公告)号：US06452211B1
公开(公告)日：2002-09-17
申请号：US09095027
申请日：1998-06-09
申请人： Hisashi Ohtani , Shunpei Yamazaki , Jun Koyama , Yasushi Ogata , Akiharu Miyanaga
发明人： Hisashi Ohtani , Shunpei Yamazaki , Jun Koyama , Yasushi Ogata , Akiharu Miyanaga
IPC分类号： H01L2904
CPC分类号： H01L29/045 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78675 , H01L29/78678 , Y10S148/122
摘要： A semiconductor thin film having extremely superior crystallinity and a semiconductor device using the semiconductor thin film having high performance are provided. The semiconductor thin film is manufactured in such a manner that after an amorphous semiconductor thin film is crystallized by using a catalytic element, a heat treatment is carried out in an atmosphere containing a halogen element to remove the catalytic element. The thus obtained crystalline semiconductor thin film has substantially {110} orientation. The concentration of C, N, and S remaining in the final semiconductor thin film is less than 5×1018 atoms/cm3, and the concentration of O is less than 1.5×1019 atoms/cm3.
摘要翻译：提供了具有非常优异的结晶度的半导体薄膜和使用具有高性能的半导体薄膜的半导体器件。制造半导体薄膜，使得在通过使用催化剂元素使无定形半导体薄膜结晶之后，在含有卤素元素的气氛中进行热处理以除去催化元素。由此获得的晶体半导体薄膜基本上具有{110}取向。残留在最终半导体薄膜中的C，N和S的浓度小于5×1018原子/ cm3，O的浓度小于1.5×1019原子/ cm3。

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