专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08450783B2 Semiconductor device 有权
公开(公告)号：US08450783B2
公开(公告)日：2013-05-28
申请号：US12978805
申请日：2010-12-27
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
IPC分类号： H01L27/085
CPC分类号： H01L29/7869 , G11C16/0425 , H01L27/105 , H01L27/108 , H01L27/10802 , H01L27/10805 , H01L27/11 , H01L27/115 , H01L27/11517 , H01L27/11551 , H01L27/1156 , H01L27/11563 , H01L27/11568 , H01L27/1225 , H01L28/40 , H01L29/78693 , H01L29/788 , H01L29/7881 , H01L29/792
摘要： The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.

2. 发明申请

US20110156028A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110156028A1
公开(公告)日：2011-06-30
申请号：US12978805
申请日：2010-12-27
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
IPC分类号： H01L27/108
CPC分类号： H01L29/7869 , G11C16/0425 , H01L27/105 , H01L27/108 , H01L27/10802 , H01L27/10805 , H01L27/11 , H01L27/115 , H01L27/11517 , H01L27/11551 , H01L27/1156 , H01L27/11563 , H01L27/11568 , H01L27/1225 , H01L28/40 , H01L29/78693 , H01L29/788 , H01L29/7881 , H01L29/792
摘要： The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.
摘要翻译：半导体器件包括源极线，位线，信号线，字线，在源极线和位线之间并联连接的存储器单元，通过开关电连接到源极线和位线的第一驱动器电路元件，通过开关元件电连接到源极线的第二驱动器电路，电连接到信号线的第三驱动电路，以及电连接到字线的第四驱动电路。存储单元包括第一晶体管，包括第一栅电极，第一源电极和第一漏电极，第二晶体管包括第二栅电极，第二源电极和第二漏极，以及电容器。第二晶体管包括氧化物半导体材料。

3. 发明授权

US08576636B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08576636B2
公开(公告)日：2013-11-05
申请号：US13175090
申请日：2011-07-01
申请人： Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue , Shuhei Nagatsuka
发明人： Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue , Shuhei Nagatsuka
IPC分类号： G11C11/34
CPC分类号： H01L27/1156 , G11C11/404 , G11C16/0441 , H01L27/1207
摘要： A plurality of memory cells included in a memory cell array are divided into a plurality of blocks every plural rows. A common bit line is electrically connected to the divided bit lines through selection transistors in the blocks. One of the memory cells includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first channel formation region. The second transistor includes a second channel formation region. The first channel formation region includes a semiconductor material different from the semiconductor material of the second channel formation region.
摘要翻译：包括在存储单元阵列中的多个存储单元被分成多个块，每个多行。公共位线通过块中的选择晶体管电连接到分割位线。一个存储单元包括第一晶体管，第二晶体管和电容器。第一晶体管包括第一沟道形成区。第二晶体管包括第二沟道形成区域。第一沟道形成区域包括与第二沟道形成区域的半导体材料不同的半导体材料。

4. 发明授权

US08441841B2 Semiconductor device and driving method of semiconductor device 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US08441841B2
公开(公告)日：2013-05-14
申请号：US13027546
申请日：2011-02-15
申请人： Shuhei Nagatsuka , Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue
发明人： Shuhei Nagatsuka , Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue
IPC分类号： G11C11/24
CPC分类号： G11C8/08 , G11C11/413
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor and the semiconductor device includes a potential conversion circuit which functions to output a potential lower than a reference potential for reading data from the memory cell. With the use of a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and capable of holding data for a long time can be provided.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也可以保存存储的数据。半导体器件包括具有宽栅半导体例如氧化物半导体的存储单元，并且该半导体器件包括用于输出低于用于从存储单元读取数据的参考电位的电位的电位转换电路。通过使用宽栅半导体，可以提供能够充分降低包含在存储单元中并能够长时间保持数据的晶体管的截止电流的半导体器件。

5. 发明申请

US20120051116A1 DRIVING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的驱动方法
公开(公告)号：US20120051116A1
公开(公告)日：2012-03-01
申请号：US13206547
申请日：2011-08-10
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C11/24
CPC分类号： G11C16/0433 , G11C11/404
摘要： A semiconductor device with a novel structure and a driving method thereof are provided. A semiconductor device includes a non-volatile memory cell including a writing transistor including an oxide semiconductor, a reading p-channel transistor including a semiconductor material different from that of the writing transistor, and a capacitor. Data is written to the memory cell by turning on the writing transistor so that a potential is supplied to a node where a source electrode of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined amount of electric charge is held in the node. In a holding period, the memory cell is brought into a selected state and a source electrode and a drain electrode of the reading transistor are set to the same potential, whereby the electric charge stored in the node is held.
摘要翻译：提供具有新颖结构的半导体器件及其驱动方法。一种半导体器件包括：非易失性存储单元，包括包括氧化物半导体的写入晶体管，包括与写入晶体管的半导体材料不同的半导体材料的读取P沟道晶体管，以及电容器。通过接通写入晶体管将数据写入存储单元，使得电位被提供给写入晶体管的源电极，电容器的一个电极和读取晶体管的栅极电连接的节点，以及然后关闭写入晶体管，使得节点中保持预定量的电荷。在保持期间，将存储单元置于选择状态，将读取晶体管的源电极和漏电极设定为相同的电位，由此保存存储在节点中的电荷。

6. 发明申请

US20110199816A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD OF THE SAME 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20110199816A1
公开(公告)日：2011-08-18
申请号：US13022407
申请日：2011-02-07
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C11/24
CPC分类号： G11C11/24 , G11C11/403 , G11C11/405 , H01L27/1052 , H01L27/11521 , H01L27/1225
摘要： An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and the number of times of writing is not limited. The semiconductor device is formed using a wide gap semiconductor and includes a potential change circuit which selectively applies a potential either equal to or different from a potential of a bit line to a source line. Thus, power consumption of the semiconductor device can be sufficiently reduced.
摘要翻译：目的在于提供具有新颖结构的半导体器件，其中即使在不提供电力的情况下也可以保持存储的数据，并且写入的次数不受限制。半导体器件使用宽间隙半导体形成，并且包括电位改变电路，其选择性地将与位线的电位等于或不同的电位施加到源极线。因此，可以充分降低半导体器件的功耗。

7. 发明申请

US20110198593A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110198593A1
公开(公告)日：2011-08-18
申请号：US13019330
申请日：2011-02-02
申请人： Kiyoshi Kato , Shuhei Nagatsuka , Hiroki Inoue , Takanori Matsuzaki
发明人： Kiyoshi Kato , Shuhei Nagatsuka , Hiroki Inoue , Takanori Matsuzaki
IPC分类号： H01L29/772
CPC分类号： H01L27/108 , H01L27/105 , H01L27/1052 , H01L27/1156 , H01L27/1225
摘要： A semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of times of writing. In the semiconductor device, a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is provided in matrix and a wiring (also called a bit line) for connecting one memory cell to another memory cell and a source or drain electrode of the first transistor are electrically connected to each other through a source or drain electrode of the second transistor. Accordingly, the number of wirings can be smaller than that in the case where the source or drain electrode of the first transistor and the source or drain electrode of the second transistor are connected to different wirings. Thus, the degree of integration of the semiconductor device can be increased.
摘要翻译：具有新颖结构的半导体器件，其中即使在不提供电力的情况下也可以保持存储的数据，并且对写入次数没有限制。在半导体装置中，以矩阵形式设置有各自包括第一晶体管，第二晶体管和电容器的多个存储单元，以及用于将一个存储单元连接到另一个存储单元的源（或称为位线）第一晶体管的漏极电极通过第二晶体管的源极或漏极电极彼此电连接。因此，布线数量可以比第一晶体管的源极或漏极以及第二晶体管的源极或漏极连接到不同的布线的情况下的布线数量小。因此，可以提高半导体器件的集成度。

8. 发明授权

US08654566B2 Semiconductor device and driving method thereof 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08654566B2
公开(公告)日：2014-02-18
申请号：US13221947
申请日：2011-08-31
申请人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
发明人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
IPC分类号： G11C11/24
CPC分类号： G11C11/403 , G11C16/0433 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1156 , H01L27/1225 , H01L29/7869
摘要： The semiconductor device includes a memory cell including a first transistor including a first channel formation region, a first gate electrode, and first source and drain regions; a second transistor including a second channel formation region provided so as to overlap with at least part of either of the first source region or the first drain region, a second source electrode, a second drain electrode electrically connected to the first gate electrode, and a second gate electrode; and an insulating layer provided between the first transistor and the second transistor. In a period during which the second transistor needs in an off state, at least when a positive potential is supplied to the first source region or the first drain region, a negative potential is supplied to the second gate electrode.
摘要翻译：半导体器件包括存储单元，其包括第一晶体管，第一晶体管包括第一沟道形成区，第一栅电极以及第一源区和漏区; 第二晶体管，包括设置成与第一源极区域或第一漏极区域中的至少一部分重叠的第二沟道形成区域，第二源极电极，电连接到第一栅极电极的第二漏极电极，以及第二栅电极; 以及设置在第一晶体管和第二晶体管之间的绝缘层。在第二晶体管需要处于截止状态的期间中，至少当向第一源极区域或第一漏极区域提供正电位时，向第二栅电极提供负电位。

9. 发明授权

US08582348B2 Semiconductor device and method for driving semiconductor device 有权
标题翻译：用于驱动半导体器件的半导体器件和方法
公开(公告)号：US08582348B2
公开(公告)日：2013-11-12
申请号：US13195089
申请日：2011-08-01
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C8/00 , G11C8/18 , G11C5/14 , G11C11/34 , G11C14/00
CPC分类号： G11C16/0408 , G11C11/405 , G11C16/02
摘要： It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and does not have a limitation on the number of writing operations. A semiconductor device includes a plurality of memory cells each including a transistor including a first semiconductor material, a transistor including a second semiconductor material that is different from the first semiconductor material, and a capacitor, and a potential switching circuit having a function of supplying a power supply potential to a source line in a writing period. Thus, power consumption of the semiconductor device can be sufficiently suppressed.
摘要翻译：本发明的目的是提供一种具有新颖结构的半导体器件，其中即使在未提供电力的情况下也可以保持存储的数据，并且对写入操作的数量没有限制。半导体器件包括多个存储单元，每个存储单元包括包括第一半导体材料的晶体管，包括与第一半导体材料不同的第二半导体材料的晶体管，以及电容器，以及电位切换电路，在写作期间的电源供应潜力。因此，可以充分地抑制半导体器件的功耗。

10. 发明授权

US08451651B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08451651B2
公开(公告)日：2013-05-28
申请号：US13027543
申请日：2011-02-15
申请人： Takanori Matsuzaki , Kiyoshi Kato , Hiroki Inoue , Shuhei Nagatsuka
发明人： Takanori Matsuzaki , Kiyoshi Kato , Hiroki Inoue , Shuhei Nagatsuka
IPC分类号： G11C11/24
CPC分类号： G11C16/0408 , H01L27/11519 , H01L27/11521 , H01L27/1156
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也可以保存存储的数据。使用能够充分降低诸如大孔半导体的氧化物半导体材料的晶体管的截止电流的材料形成半导体器件。能够充分降低晶体管的截止电流的半导体材料的使用允许长时间保持数据。此外，信号线中的电位变化的定时相对于写入字线的电位变化的定时被延迟。这使得可以防止数据写入错误。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式