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1. 发明申请

US20130002624A1 DISPLAY DEVICE 有权
公开(公告)号：US20130002624A1
公开(公告)日：2013-01-03
申请号：US13613811
申请日：2012-09-13
申请人： Shunpei YAMAZAKI , Takeshi OSADA , Hidekazu MIYAIRI , Yasuhiro JINBO
发明人： Shunpei YAMAZAKI , Takeshi OSADA , Hidekazu MIYAIRI , Yasuhiro JINBO
IPC分类号： G09G5/00 , B32B3/10 , B32B15/04 , H05K1/14
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/134363 , G02F1/13439 , G02F1/1365 , H01L27/1214 , H01L27/1229 , H01L27/1251 , H01L27/1255 , H01L29/04 , H01L29/78648 , Y10T428/24331
摘要： A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit.

2. 发明申请

US20110284856A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110284856A1
公开(公告)日：2011-11-24
申请号：US13196926
申请日：2011-08-03
申请人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Yasuhiro JINBO
发明人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Yasuhiro JINBO
IPC分类号： H01L29/786 , H01L33/16 , H01L33/08
CPC分类号： H01L27/1288 , H01L21/67017 , H01L21/67207 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66742 , H01L29/66765 , H01L29/78678 , H01L29/78687 , H01L29/78696
摘要： An object is to reduce off-current of a thin film transistor. Another object is to improve electric characteristics of a thin film transistor. Further, it is still another object to improve image quality of a display device using the thin film transistor. An aspect of the present invention is a thin film transistor including a semiconductor film formed over a gate electrode and in an inner region of the gate electrode which does not reach an end portion of the gate electrode, with a gate insulating film interposed therebetween, a film covering at least a side surface of the semiconductor film, and a pair of wirings over the film covering the side surface of the semiconductor film; in which an impurity element serving as a donor is added to the semiconductor film.
摘要翻译：目的是减少薄膜晶体管的截止电流。另一个目的是改善薄膜晶体管的电特性。此外，还有另一个目的是提高使用薄膜晶体管的显示装置的图像质量。本发明的一个方面是一种薄膜晶体管，它包括半导体膜，该半导体膜形成在栅电极之上，并且在栅电极的内部区域中，其不到达栅电极的端部，栅极绝缘膜介于它们之间，至少覆盖半导体膜的侧面的膜，以及覆盖半导体膜的侧面的膜上的一对配线; 其中作为供体的杂质元素被添加到半导体膜。

3. 发明申请

US20090101916A1 MICROCRYSTALLINE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR 有权
标题翻译：微晶半导体膜，薄膜晶体管和包括薄膜晶体管的显示器件
公开(公告)号：US20090101916A1
公开(公告)日：2009-04-23
申请号：US12255093
申请日：2008-10-21
申请人： Shunpei YAMAZAKI , Yasuhiro JINBO
发明人： Shunpei YAMAZAKI , Yasuhiro JINBO
IPC分类号： H01L29/04
CPC分类号： H01L29/04 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor with excellent electric characteristics and a display device having the thin film transistor are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a buffer layer formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the buffer layer; and wirings formed over the pair of semiconductor films. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layer, and the buffer layer does not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS.
摘要翻译：提出了具有优异电特性的薄膜晶体管和具有薄膜晶体管的显示装置。薄膜晶体管包括形成在栅电极上的栅极绝缘膜; 包括形成在所述栅极绝缘膜上的用作供体的杂质元素的微晶半导体膜; 形成在微晶半导体膜上的缓冲层; 在缓冲层上形成一对掺有赋予一种导电类型的杂质元素的半导体膜; 以及在该对半导体膜上形成的布线。在微晶半导体膜中作为供体的杂质元素的浓度从栅极绝缘膜侧向缓冲层减小，缓冲层不包含作为供体的杂质元素，其浓度高于 SIMS检测限。

4. 发明申请

US20120274879A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120274879A1
公开(公告)日：2012-11-01
申请号：US13542693
申请日：2012-07-06
申请人： Yasuhiro JINBO , Masafumi MORISUE , Hajime KIMURA , Shunpei YAMAZAKI
发明人： Yasuhiro JINBO , Masafumi MORISUE , Hajime KIMURA , Shunpei YAMAZAKI
IPC分类号： G02F1/13357 , G09F13/04
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/133603 , H01L21/6835 , H01L27/1214 , H01L27/153 , H01L33/0079 , H01L33/62 , H01L51/003 , H01L2221/68318 , H01L2221/68386
摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
摘要翻译：本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

5. 发明申请

US20110272701A1 THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，具有薄膜晶体管的显示装置及其制造方法
公开(公告)号：US20110272701A1
公开(公告)日：2011-11-10
申请号：US13187584
申请日：2011-07-21
申请人： Shunpei YAMAZAKI , Yoshiyuki KUROKAWA , Yasuhiro JINBO , Satoshi KOBAYASHI , Daisuke KAWAE
发明人： Shunpei YAMAZAKI , Yoshiyuki KUROKAWA , Yasuhiro JINBO , Satoshi KOBAYASHI , Daisuke KAWAE
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode, a microcrystalline semiconductor film formed over the gate insulating film, a buffer layer formed over the microcrystalline semiconductor film, a pair of semiconductor films to which an impurity element imparting one conductivity type is added and which are formed over the buffer layer, and wirings formed over the pair of semiconductor films to which the impurity element imparting one conductivity type is added. A part of the gate insulating film or the entire gate insulating film, and/or a part of the microcrystalline semiconductor or the entire microcrystalline semiconductor includes an impurity element which serves as a donor.
摘要翻译：提出了具有优异电特性的薄膜晶体管，具有薄膜晶体管的显示装置，以及制造薄膜晶体管和显示装置的方法。薄膜晶体管包括形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的微晶半导体膜，形成在微晶半导体膜上的缓冲层，一对半导体膜，赋予一种导电型的杂质元素并且形成在缓冲层之上，并且在添加有赋予一种导电类型的杂质元素的一对半导体膜上形成的布线。栅极绝缘膜或整个栅极绝缘膜的一部分和/或微晶半导体的一部分或整个微晶半导体包括用作供体的杂质元素。

6. 发明申请

US20090261330A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20090261330A1
公开(公告)日：2009-10-22
申请号：US12424557
申请日：2009-04-16
申请人： Shunpei YAMAZAKI , Yasuhiro JINBO
发明人： Shunpei YAMAZAKI , Yasuhiro JINBO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/127 , C23C16/0272 , C23C16/24 , H01L27/1214 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78621 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： It is an object to control quality of a microcrystalline semiconductor film or a semiconductor film including crystal grains so that operation characteristics of a semiconductor element typified by a TFT can be improved. It is another object to improve characteristics of a semiconductor element typified by a TFT by controlling a deposition process of a microcrystalline semiconductor film or a semiconductor film including crystal grains. In addition, it is another object to increase on-state current of a thin film transistor and to reduce off-state current of the thin film transistor. In a semiconductor layer including a plurality of crystalline regions in an amorphous structure, generation positions and generation density of crystal nuclei from which the crystalline regions start to grow are controlled, whereby quality of the semiconductor layer is controlled. In addition, after generation of crystal nuclei from which the crystalline regions start to grow in the semiconductor layer, an impurity element serving as a donor is added to the semiconductor layer, whereby crystallinity of the semiconductor layer is increased and the resistivity of the semiconductor layer is reduced.
摘要翻译：本发明的目的是控制微晶半导体膜或包含晶粒的半导体膜的质量，从而可以提高由TFT代表的半导体元件的工作特性。另一个目的是通过控制微晶半导体膜或包括晶粒的半导体膜的沉积工艺来改善由TFT代表的半导体元件的特性。此外，另一个目的是增加薄膜晶体管的导通电流并且减小薄膜晶体管的截止电流。在包括非晶结构中的多个结晶区域的半导体层中，控制晶体区域开始生长的晶核的产生位置和发生密度，从而控制半导体层的质量。此外，在半导体层中产生结晶区域开始生长的晶核之后，在半导体层中添加用作施主的杂质元素，由此半导体层的结晶度增加，半导体层的电阻率降低了。

7. 发明申请

US20090114921A1 THIN FILM TRANSISTOR, AND DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管和具有薄膜晶体管的显示器件
公开(公告)号：US20090114921A1
公开(公告)日：2009-05-07
申请号：US12258569
申请日：2008-10-27
申请人： Shunpei YAMAZAKI , Yasuhiro JINBO
发明人： Shunpei YAMAZAKI , Yasuhiro JINBO
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L29/04 , H01L29/66765 , H01L29/78609 , H01L29/78678 , H01L29/78696
摘要： The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a pair of buffer layers formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the pair of buffer layers; and wirings formed over the pair of semiconductor films to which an impurity element imparting one conductivity type is added. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layers, and the buffer layers do not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS.
摘要翻译：薄膜晶体管包括形成在栅电极上的栅极绝缘膜; 包括形成在所述栅极绝缘膜上的用作供体的杂质元素的微晶半导体膜; 形成在所述微晶半导体膜上的一对缓冲层; 在一对缓冲层上形成一对添加有赋予一种导电类型的杂质元素的半导体膜; 并且在添加有赋予一种导电类型的杂质元素的一对半导体膜上形成的布线。作为微晶半导体膜中的供体的杂质元素的浓度从栅极绝缘膜侧朝向缓冲层减少，缓冲层不包含作为供体的杂质元素，其浓度高于 SIMS检测限。

8. 发明申请

US20090047758A1 METHOD OF MANUFACTURING DISPLAY DEVICE 有权
标题翻译：制造显示装置的方法
公开(公告)号：US20090047758A1
公开(公告)日：2009-02-19
申请号：US12186001
申请日：2008-08-05
申请人： Shunpei YAMAZAKI , Sachiaki TEDUKA , Makoto FURUNO , Satoshi TORIUMI , Yasuhiro JINBO , Koji DAIRIKI
发明人： Shunpei YAMAZAKI , Sachiaki TEDUKA , Makoto FURUNO , Satoshi TORIUMI , Yasuhiro JINBO , Koji DAIRIKI
IPC分类号： H01L21/336
CPC分类号： H01L29/04 , H01L21/0262 , H01L27/1222 , H01L27/127 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10−5 Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.
摘要翻译：在形成底栅极薄膜晶体管的情况下，进行通过等离子体CVD法在栅极绝缘膜上形成微晶半导体膜的步骤，以及在微晶半导体膜上形成非晶半导体膜的步骤。在形成微晶半导体膜的步骤中，反应室中的压力设定为10-5Pa以下，基板温度设定在120℃〜220℃的范围内，等离子体由引入氢气和硅气体，使氢等离子体作用于形成在栅极绝缘膜的表面上的反应产物，以在进行成膜的同时进行除去。此外，通过施加VHF频带的第一高频电力，VHF频带的第二高频电力彼此叠加而产生等离子体。

9. 发明申请

US20090072237A1 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR 有权
标题翻译：制造薄膜晶体管的方法和包括薄膜晶体管的显示器件
公开(公告)号：US20090072237A1
公开(公告)日：2009-03-19
申请号：US12208867
申请日：2008-09-11
申请人： Shunpei YAMAZAKI , Yasuhiro JINBO , Makoto FURUNO
发明人： Shunpei YAMAZAKI , Yasuhiro JINBO , Makoto FURUNO
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L29/04 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To provide a method for manufacturing a thin film transistor with excellent electric characteristics and high reliability and a display device including the thin film transistor. A gate insulating film is formed over a gate electrode, crystal nuclei is formed over the gate insulating film using fluorosilane and silane, and crystal growth is generated using the crystal nuclei as nuclei to form a microcrystalline semiconductor film, so that crystallinity at an interface between the gate insulating film and the microcrystalline semiconductor film is improved. Next, a thin film transistor is manufactured using the microcrystalline semiconductor film having crystallinity improved at the interface between the gate insulating film and the microcrystalline semiconductor film as a channel formation region.
摘要翻译：提供一种具有优异的电特性和高可靠性的薄膜晶体管的制造方法以及包括薄膜晶体管的显示装置。在栅电极上形成栅极绝缘膜，使用氟硅烷和硅烷在栅极绝缘膜上形成晶体核，并且使用晶核作为核产生晶体生长以形成微晶半导体膜，使得在晶界处的结晶度在提高了栅极绝缘膜和微晶半导体膜。接下来，使用在栅极绝缘膜和微晶半导体膜之间的界面处具有改善结晶度的微晶半导体膜作为沟道形成区域来制造薄膜晶体管。

10. 发明申请

US20100279475A1 THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，具有薄膜晶体管的显示装置及其制造方法
公开(公告)号：US20100279475A1
公开(公告)日：2010-11-04
申请号：US12839669
申请日：2010-07-20
申请人： Shunpei YAMAZAKI , Yoshiyuki KUROKAWA , Yasuhiro JINBO , Satoshi KOBAYASHI , Daisuke KAWAE
发明人： Shunpei YAMAZAKI , Yoshiyuki KUROKAWA , Yasuhiro JINBO , Satoshi KOBAYASHI , Daisuke KAWAE
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode, a microcrystalline semiconductor film formed over the gate insulating film, a buffer layer formed over the microcrystalline semiconductor film, a pair of semiconductor films to which an impurity element imparting one conductivity type is added and which are formed over the buffer layer, and wirings formed over the pair of semiconductor films to which the impurity element imparting one conductivity type is added. A part of the gate insulating film or the entire gate insulating film, and/or a part of the microcrystalline semiconductor or the entire microcrystalline semiconductor includes an impurity element which serves as a donor.
摘要翻译：提出了具有优异电特性的薄膜晶体管，具有薄膜晶体管的显示装置，以及制造薄膜晶体管和显示装置的方法。薄膜晶体管包括形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的微晶半导体膜，形成在微晶半导体膜上的缓冲层，一对半导体膜，赋予一种导电型的杂质元素并且形成在缓冲层之上，并且在添加有赋予一种导电类型的杂质元素的一对半导体膜上形成的布线。栅极绝缘膜或整个栅极绝缘膜的一部分和/或微晶半导体的一部分或整个微晶半导体包括用作供体的杂质元素。

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