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1. 发明申请

US20090160753A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20090160753A1
公开(公告)日：2009-06-25
申请号：US12371936
申请日：2009-02-17
申请人： Jun KOYAMA , Keitaro IMAI , Shinji MAEKAWA , Makoto FURUNO , Osamu NAKAMURA , Shunpei YAMAZAKI
发明人： Jun KOYAMA , Keitaro IMAI , Shinji MAEKAWA , Makoto FURUNO , Osamu NAKAMURA , Shunpei YAMAZAKI
IPC分类号： G09G3/36
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/13624 , G09G3/20 , G09G2300/0408 , G09G2300/08 , G09G2310/0289 , H01L27/1214 , H01L29/04 , H01L29/78669 , H01L29/78678
摘要： When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem.
摘要翻译：当使用半非晶TFT来形成信号线驱动电路和像素时，驱动像素需要大的幅度，因此需要大的电源电压。另一方面，当移位寄存器由具有单一导电性的晶体管构成时，需要自举电路，并且将电源上的电压施加到特定元件。因此，不能通过单个电源实现驱动振幅和可靠性。根据本发明，提供具有单一电导率的电平移位器来解决这个问题。

2. 发明申请

US20110186850A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL TELEVISION RECEIVER 有权
标题翻译：液晶显示装置及其制造方法和液晶电视接收器
公开(公告)号：US20110186850A1
公开(公告)日：2011-08-04
申请号：US13085750
申请日：2011-04-13
申请人： Shunpei YAMAZAKI , Shinji MAEKAWA , Makoto FURUNO , Osamu NAKAMURA , Keitaro IMAI
发明人： Shunpei YAMAZAKI , Shinji MAEKAWA , Makoto FURUNO , Osamu NAKAMURA , Keitaro IMAI
IPC分类号： H01L33/16 , H01L21/336
CPC分类号： H01L33/08 , G02F1/1368 , G02F2001/136295 , H01L21/76838 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/66765 , H01L2924/0002 , Y10T428/24421 , H01L2924/00
摘要： At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal display device. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object is used as a method capable of selectively forming a pattern in forming a conductive layer, an insulating layer, or the like.
摘要翻译：通过能够选择性地形成图案以制造液晶的方法形成至少一个或多个形成布线或电极的导电层和制造用于形成预定图案的掩模等显示面板所需的图案显示设备。使用能够通过根据特定目的选择性地排出组合物的液滴来形成预定图案的液滴喷射方法作为能够在形成导电层，绝缘层等中选择性地形成图案的方法。

3. 发明申请

US20110193087A1 Photoelectric Conversion Device and Method for Manufacturing the Same 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20110193087A1
公开(公告)日：2011-08-11
申请号：US13023601
申请日：2011-02-09
申请人： Shunpei YAMAZAKI , Satoshi TORIUMI , Tomokazu YOKOI , Makoto FURUNO
发明人： Shunpei YAMAZAKI , Satoshi TORIUMI , Tomokazu YOKOI , Makoto FURUNO
IPC分类号： H01L31/105
CPC分类号： H01L31/03685 , H01L31/03762 , H01L31/1816 , Y02E10/545 , Y02E10/548
摘要： To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.
摘要翻译：提供具有改善的光电转换特性和成本竞争力的光电转换装置。包括半导体结的光电转换装置具有使针状晶体在杂质半导体层上生长的半导体层。杂质半导体层由微晶半导体形成，并且包括赋予一种导电类型的杂质。通过将稀释气体（通常为硅烷）的流量设定为沉积时的半导体源气体（通常为氢）的流量的1倍至6倍，将非晶半导体层沉积在微晶半导体层上。因此，使得在膜的沉积方向即从微晶半导体层到非晶半导体层的方向上渐缩的三维形状的晶体生长。

4. 发明申请

US20110059562A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110059562A1
公开(公告)日：2011-03-10
申请号：US12944841
申请日：2010-11-12
申请人： Shunpei YAMAZAKI , Sachiaki TEDUKA , Satoshi TORIUMI , Makoto FURUNO , Yasuhiro JINBO , Koji DAIRIKI , Hideaki KUWABARA
发明人： Shunpei YAMAZAKI , Sachiaki TEDUKA , Satoshi TORIUMI , Makoto FURUNO , Yasuhiro JINBO , Koji DAIRIKI , Hideaki KUWABARA
IPC分类号： H01L21/336
CPC分类号： C23C16/515 , C23C16/509 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.
摘要翻译：本发明的目的是提供一种在大面积基板上具有优良质量的微晶半导体膜的制造方法。在栅电极上形成栅极绝缘膜之后，为了提高在初始阶段形成的微晶半导体膜的质量，通过提供具有不同频率的高频功率并且膜的下部附近产生辉光放电等离子体在第一成膜条件下形成具有栅极绝缘膜的界面，其成膜速率低，但是导致良好的膜质量。此后，在成膜速度较高的第二成膜条件下沉积膜的上部，并且还在微晶半导体膜上层叠缓冲层。

5. 发明申请

US20120094446A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120094446A1
公开(公告)日：2012-04-19
申请号：US13338340
申请日：2011-12-28
申请人： Shunpei YAMAZAKI , Makoto FURUNO
发明人： Shunpei YAMAZAKI , Makoto FURUNO
IPC分类号： H01L21/336
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L29/41733 , H01L29/66765
摘要： Electric characteristics of a thin film transistor including a channel formation region including a microcrystalline semiconductor are improved. The thin film transistor includes a gate electrode, a gate insulating film formed over the gate electrode, a microcrystalline semiconductor layer formed over the gate insulating film, a semiconductor layer which is formed over the microcrystalline semiconductor layer and includes an amorphous semiconductor, and a source region and a drain region which are formed over the semiconductor layer. A channel is formed in the microcrystalline semiconductor layer when the thin film transistor is placed in an on state, and the microcrystalline semiconductor layer includes an impurity element for functioning as an acceptor. The microcrystalline semiconductor layer is formed by a plasma-enhanced chemical vapor deposition method. In forming the microcrystalline semiconductor layer, a process gas is excited with two or more kinds of high-frequency electric power with different frequencies.
摘要翻译：提高了包括微晶半导体的沟道形成区域的薄膜晶体管的电特性。薄膜晶体管包括栅电极，形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的微晶半导体层，形成在微晶半导体层上并包括非晶半导体的半导体层，以及源极区域和漏极区域，形成在半导体层上。当薄膜晶体管处于导通状态时，在微晶半导体层中形成沟道，微晶半导体层包括用作受体的杂质元素。微晶半导体层通过等离子体增强化学气相沉积法形成。在形成微晶半导体层时，以不同频率的两种以上的高频电力激发处理气体。

6. 发明申请

US20110291093A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110291093A1
公开(公告)日：2011-12-01
申请号：US13207793
申请日：2011-08-11
申请人： Shunpei YAMAZAKI , Makoto FURUNO
发明人： Shunpei YAMAZAKI , Makoto FURUNO
IPC分类号： H01L29/786
CPC分类号： H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： The present invention relates to a semiconductor device including a thin film transistor comprising a microcrystalline semiconductor which forms a channel formation region and includes an acceptor impurity element, and to a manufacturing method thereof. A gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor layer which is formed over the gate insulating film and is formed of a microcrystalline semiconductor, a second semiconductor layer which is formed over the first semiconductor layer and includes an amorphous semiconductor, and a source region and a drain region which are formed over the second semiconductor layer are provided in the thin film transistor. A channel is formed in the first semiconductor layer when the thin film transistor is placed in an on state.
摘要翻译：本发明涉及包括形成沟道形成区并包含受主杂质元素的微晶半导体的薄膜晶体管的半导体器件及其制造方法。栅电极，形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上并由微晶半导体形成的第一半导体层，形成在第一半导体层上的第二半导体层，半导体以及形成在第二半导体层上的源极区和漏极区设置在薄膜晶体管中。当薄膜晶体管处于导通状态时，在第一半导体层中形成沟道。

7. 发明申请

US20090072237A1 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR 有权
标题翻译：制造薄膜晶体管的方法和包括薄膜晶体管的显示器件
公开(公告)号：US20090072237A1
公开(公告)日：2009-03-19
申请号：US12208867
申请日：2008-09-11
申请人： Shunpei YAMAZAKI , Yasuhiro JINBO , Makoto FURUNO
发明人： Shunpei YAMAZAKI , Yasuhiro JINBO , Makoto FURUNO
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L29/04 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To provide a method for manufacturing a thin film transistor with excellent electric characteristics and high reliability and a display device including the thin film transistor. A gate insulating film is formed over a gate electrode, crystal nuclei is formed over the gate insulating film using fluorosilane and silane, and crystal growth is generated using the crystal nuclei as nuclei to form a microcrystalline semiconductor film, so that crystallinity at an interface between the gate insulating film and the microcrystalline semiconductor film is improved. Next, a thin film transistor is manufactured using the microcrystalline semiconductor film having crystallinity improved at the interface between the gate insulating film and the microcrystalline semiconductor film as a channel formation region.
摘要翻译：提供一种具有优异的电特性和高可靠性的薄膜晶体管的制造方法以及包括薄膜晶体管的显示装置。在栅电极上形成栅极绝缘膜，使用氟硅烷和硅烷在栅极绝缘膜上形成晶体核，并且使用晶核作为核产生晶体生长以形成微晶半导体膜，使得在晶界处的结晶度在提高了栅极绝缘膜和微晶半导体膜。接下来，使用在栅极绝缘膜和微晶半导体膜之间的界面处具有改善结晶度的微晶半导体膜作为沟道形成区域来制造薄膜晶体管。

8. 发明申请

US20090267066A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20090267066A1
公开(公告)日：2009-10-29
申请号：US12422577
申请日：2009-04-13
申请人： Shunpei YAMAZAKI , Satoshi TORIUMI , Tomokazu YOKOI , Makoto FURUNO
发明人： Shunpei YAMAZAKI , Satoshi TORIUMI , Tomokazu YOKOI , Makoto FURUNO
IPC分类号： H01L31/0376 , H01L31/18
CPC分类号： H01L31/03685 , H01L31/03762 , H01L31/1816 , Y02E10/545 , Y02E10/548
摘要： To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.
摘要翻译：提供具有改善的光电转换特性和成本竞争力的光电转换装置。包括半导体结的光电转换装置具有使针状晶体在杂质半导体层上生长的半导体层。杂质半导体层由微晶半导体形成，并且包括赋予一种导电类型的杂质。通过将稀释气体（通常为硅烷）的流量设定为沉积时的半导体源气体（通常为氢）的流量的1倍至6倍，将非晶半导体层沉积在微晶半导体层上。因此，使得在膜的沉积方向即从微晶半导体层到非晶半导体层的方向上渐缩的三维形状的晶体生长。

9. 发明申请

US20090081845A1 MANUFACTURING METHOD OF SUBSTRATE PROVIDED WITH SEMICONDUCTOR FILMS 有权
标题翻译：具有半导体膜的衬底的制造方法
公开(公告)号：US20090081845A1
公开(公告)日：2009-03-26
申请号：US12211951
申请日：2008-09-17
申请人： Shunpei YAMAZAKI , Makoto FURUNO
发明人： Shunpei YAMAZAKI , Makoto FURUNO
IPC分类号： H01L21/762
CPC分类号： H01L21/02002 , H01L21/76254
摘要： A plurality of rectangular single crystal semiconductor substrates are prepared. Each of the single crystal semiconductor substrates is doped with hydrogen ions and a damaged region is formed at a desired depth, and a bonding layer is formed on a surface thereof. The plurality of single crystal substrates with the damaged regions formed therein and the bonding layers formed thereover are arranged on a tray. Depression portions for holding the single crystal semiconductor substrates are formed in the tray. With the single crystal semiconductor substrates arranged on the tray, the plurality of single crystal semiconductor substrates with the damaged regions formed therein and the bonding layers formed thereover are bonded to a base substrate. By performing heat treatment and dividing the single crystal semiconductor substrates along the damaged regions, the plurality of single crystal semiconductor layers that are sliced are formed over the base substrate.
摘要翻译：制备多个矩形单晶半导体衬底。每个单晶半导体衬底都掺杂有氢离子，并且在期望的深度上形成损伤区域，并且在其表面上形成接合层。其中形成有损伤区域的多个单晶基板和形成在其上的接合层布置在托盘上。用于保持单晶半导体衬底的凹陷部分形成在托盘中。利用布置在托盘上的单晶半导体衬底，其中形成有损坏区域的多个单晶半导体衬底和其上形成的接合层被接合到基底衬底。通过对损伤区域进行热处理和分割单晶半导体基板，在基底基板上形成切片的多个单晶半导体层。

10. 发明申请

US20090047758A1 METHOD OF MANUFACTURING DISPLAY DEVICE 有权
标题翻译：制造显示装置的方法
公开(公告)号：US20090047758A1
公开(公告)日：2009-02-19
申请号：US12186001
申请日：2008-08-05
申请人： Shunpei YAMAZAKI , Sachiaki TEDUKA , Makoto FURUNO , Satoshi TORIUMI , Yasuhiro JINBO , Koji DAIRIKI
发明人： Shunpei YAMAZAKI , Sachiaki TEDUKA , Makoto FURUNO , Satoshi TORIUMI , Yasuhiro JINBO , Koji DAIRIKI
IPC分类号： H01L21/336
CPC分类号： H01L29/04 , H01L21/0262 , H01L27/1222 , H01L27/127 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10−5 Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.
摘要翻译：在形成底栅极薄膜晶体管的情况下，进行通过等离子体CVD法在栅极绝缘膜上形成微晶半导体膜的步骤，以及在微晶半导体膜上形成非晶半导体膜的步骤。在形成微晶半导体膜的步骤中，反应室中的压力设定为10-5Pa以下，基板温度设定在120℃〜220℃的范围内，等离子体由引入氢气和硅气体，使氢等离子体作用于形成在栅极绝缘膜的表面上的反应产物，以在进行成膜的同时进行除去。此外，通过施加VHF频带的第一高频电力，VHF频带的第二高频电力彼此叠加而产生等离子体。

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