专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100090125A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND LASER IRRADIATION APPARATUS 有权
标题翻译：制造半导体器件和激光辐照装置的方法
公开(公告)号：US20100090125A1
公开(公告)日：2010-04-15
申请号：US12627242
申请日：2009-11-30
申请人： Shunpei YAMAZAKI , Osamu NAKAMURA , Hironobu SHOJI , Koichiro TANAKA
发明人： Shunpei YAMAZAKI , Osamu NAKAMURA , Hironobu SHOJI , Koichiro TANAKA
IPC分类号： H01L21/268
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.
摘要翻译：根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光，有效地防止了氧和氮混入半导体膜。因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

2. 发明申请

US20100173473A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20100173473A1
公开(公告)日：2010-07-08
申请号：US12722684
申请日：2010-03-12
申请人： Yasuhiro JINBO , Hironobu SHOJI , Hideto OHNUMA , Shunpei YAMAZAKI
发明人： Yasuhiro JINBO , Hironobu SHOJI , Hideto OHNUMA , Shunpei YAMAZAKI
IPC分类号： H01L21/762
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254
摘要： It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.
摘要翻译：本发明的目的是提供一种制造具有SOI层的SOI衬底的方法，该SOI衬底即使在使用诸如玻璃衬底或塑料衬底的柔性衬底时，也可以在实际应用中以高产率使用。此外，本发明的另一个目的是提供一种以高产率制造使用这种SOI衬底的薄半导体器件的方法。当将单晶半导体衬底接合到具有绝缘表面的柔性衬底并且分离单晶半导体衬底以制造SOI衬底时，一个或两个键合表面被激活，然后柔性衬底具有绝缘表面并且单晶半导体衬底彼此附接。

3. 发明申请

US20080199992A1 DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, AND TELEVISION RECEIVER 失效
标题翻译：显示装置及其制造方法和电视接收机
公开(公告)号：US20080199992A1
公开(公告)日：2008-08-21
申请号：US12100083
申请日：2008-04-09
申请人： Shinji MAEKAWA , Shunpei YAMAZAKI , Hironobu SHOJI
发明人： Shinji MAEKAWA , Shunpei YAMAZAKI , Hironobu SHOJI
IPC分类号： H01L21/336
CPC分类号： H01L27/12 , H01L27/1285 , H01L27/1292
摘要： The present invention discloses a method for manufacturing a display device comprising the steps of forming a first film pattern using a photosensitive material over a substrate, forming a second film pattern in such a way that the first film pattern is exposed by being irradiated with a laser beam, modifying a surface of the second film pattern into a droplet-shedding surface, forming a source electrode and a drain electrode by discharging a conductive material to an outer edge of the droplet-shedding surface by a droplet-discharging method, and forming a semiconductor region, a gate-insulating film, and a gate electrode over the source electrode and the drain electrode.
摘要翻译：本发明公开了一种制造显示装置的方法，包括以下步骤：使用感光材料在衬底上形成第一胶片图形，形成第二胶片图案，使第一胶片图案通过照射激光曝光将第二膜图案的表面修改为液滴脱落表面，通过通过液滴喷射方法将导电材料排放到液滴脱落表面的外边缘来形成源电极和漏极，并形成半导体区域，栅极绝缘膜和源电极和漏电极上的栅电极。

4. 发明申请

US20120045894A1 Method for Manufacturing Display Device 有权
标题翻译：显示设备制造方法
公开(公告)号：US20120045894A1
公开(公告)日：2012-02-23
申请号：US13284584
申请日：2011-10-28
申请人： Shunpei YAMAZAKI , Hironobu SHOJI , Ikuko KAWAMATA
发明人： Shunpei YAMAZAKI , Hironobu SHOJI , Ikuko KAWAMATA
IPC分类号： H01L21/283
CPC分类号： H01L27/1214 , H01L21/31105 , H01L27/124 , H01L27/1285 , H01L27/1288 , H01L27/1292 , Y02P80/30
摘要： When a mask layer is formed, a first liquid composition containing a mask-layer-forming material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern) to form a first mask layer having a frame shape. A second liquid composition containing a mask-layer-forming material is applied so as to fill a space inside the first mask layer having a frame shape to form a second mask layer. The first mask layer and the second mask layer are formed to be in contact with each other, and the first mask layer is formed to surround the second mask layer. Therefore, the first mask layer and the second mask layer can be used as one continuous mask layer.
摘要翻译：当形成掩模层时，将含有掩模层形成材料的第一液体组合物施加在期望形成的图案的外侧（对应于图案的轮廓或边缘部分），以形成第一掩模层具有框架形状。涂布含有掩模层形成材料的第二液体组合物，以填充具有框架形状的第一掩模层内的空间，以形成第二掩模层。第一掩模层和第二掩模层形成为彼此接触，并且第一掩模层形成为围绕第二掩模层。因此，第一掩模层和第二掩模层可以用作一个连续掩模层。

5. 发明申请

US20100029068A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20100029068A1
公开(公告)日：2010-02-04
申请号：US12533401
申请日：2009-07-31
申请人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
发明人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
IPC分类号： H01L21/311 , H01L21/20
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

6. 发明申请

US20110245958A1 MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法和制造设备
公开(公告)号：US20110245958A1
公开(公告)日：2011-10-06
申请号：US13161776
申请日：2011-06-16
申请人： Shunpei YAMAZAKI , Koichiro TANAKA
发明人： Shunpei YAMAZAKI , Koichiro TANAKA
IPC分类号： G06F17/00
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1229 , H01L27/3244 , Y10T29/41
摘要： To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}.
摘要翻译：为了提供使用SOI衬底的半导体器件的制造方法，可以提高移动性。使用多个接合基板（半导体基板）形成的多个半导体膜被接合到一个基板（支撑基板）。多个接合基板中的至少一个具有不同于其它接合基板的晶面取向。因此，形成在一个基底基板上的多个半导体膜中的至少一个具有不同于其它半导体膜的晶面取向。根据使用半导体膜形成的半导体元件的极性来确定半导体膜的晶面取向。例如，使用具有面{100}的半导体膜，使用具有面{110}的半导体膜形成空穴为多数载流子的p沟道元件，形成电子为多数载流子的n沟道元件 }。

7. 发明申请

US20100237354A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100237354A1
公开(公告)日：2010-09-23
申请号：US12794120
申请日：2010-06-04
申请人： Yoshiaki YAMAMOTO , Koichiro TANAKA , Atsuo ISOBE , Daisuke OHGARANE , Shunpei YAMAZAKI
发明人： Yoshiaki YAMAMOTO , Koichiro TANAKA , Atsuo ISOBE , Daisuke OHGARANE , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

8. 发明申请

US20110227126A1 ELECTRONICS DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电子设备，半导体器件及其制造方法
公开(公告)号：US20110227126A1
公开(公告)日：2011-09-22
申请号：US13150614
申请日：2011-06-01
申请人： Shunpei YAMAZAKI , Masaharu NAGAI , Osamu NAKAMURA
发明人： Shunpei YAMAZAKI , Masaharu NAGAI , Osamu NAKAMURA
IPC分类号： H01L33/48 , H01L23/053
CPC分类号： H01L27/3244 , G02F1/13454 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L51/5246 , H01L51/529 , H01L2251/5323
摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.
摘要翻译：本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜）由硅（Si）和氧（O）的组合构成。在形成之后，形成具有锥形形状的边缘部分或开口部分。然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。

9. 发明申请

US20090160753A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20090160753A1
公开(公告)日：2009-06-25
申请号：US12371936
申请日：2009-02-17
申请人： Jun KOYAMA , Keitaro IMAI , Shinji MAEKAWA , Makoto FURUNO , Osamu NAKAMURA , Shunpei YAMAZAKI
发明人： Jun KOYAMA , Keitaro IMAI , Shinji MAEKAWA , Makoto FURUNO , Osamu NAKAMURA , Shunpei YAMAZAKI
IPC分类号： G09G3/36
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/13624 , G09G3/20 , G09G2300/0408 , G09G2300/08 , G09G2310/0289 , H01L27/1214 , H01L29/04 , H01L29/78669 , H01L29/78678
摘要： When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem.
摘要翻译：当使用半非晶TFT来形成信号线驱动电路和像素时，驱动像素需要大的幅度，因此需要大的电源电压。另一方面，当移位寄存器由具有单一导电性的晶体管构成时，需要自举电路，并且将电源上的电压施加到特定元件。因此，不能通过单个电源实现驱动振幅和可靠性。根据本发明，提供具有单一电导率的电平移位器来解决这个问题。

10. 发明申请

US20090051286A1 ELECTRONICS DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电子设备，半导体器件及其制造方法
公开(公告)号：US20090051286A1
公开(公告)日：2009-02-26
申请号：US12251753
申请日：2008-10-15
申请人： Shunpei YAMAZAKI , Masaharu NAGAI , Osamu NAKAMURA
发明人： Shunpei YAMAZAKI , Masaharu NAGAI , Osamu NAKAMURA
IPC分类号： H05B33/00 , H01L23/20
CPC分类号： H01L27/3244 , G02F1/13454 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L51/5246 , H01L51/529 , H01L2251/5323
摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.
摘要翻译：本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。在本发明中，作为形成高热稳定性平坦化膜16的方法，通常使用作为骨架结构为TFT的TFT的层间绝缘膜（稍后用作发光元件的基膜的膜）的方法由硅（Si）和氧（O）的组合构成。在形成之后，形成具有锥形形状的边缘部分或开口部分。然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式