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1. 发明申请

US20070194321A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光元件，发光装置和电子装置
公开(公告)号：US20070194321A1
公开(公告)日：2007-08-23
申请号：US11673153
申请日：2007-02-09
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
IPC分类号： H01L29/04
CPC分类号： H05B33/22 , H01L51/5278 , H05B33/10
摘要： It is an object of the present invention to provide a light emitting element which can be driven at a low voltage. Other objects of the present invention are to provide a light emitting element with a high luminescent efficiency; a light emitting element with a high luminance; a light emitting element having long-life luminescence; a light emitting element and an electronic device having reduced power consumption; and a light emitting element and an electronic device which can be manufactured at low cost. The light emitting element has a light emitting layer and a barrier layer between a first electrode and a second electrode, the light emitting layer contains a base material and an impurity element, and the barrier layer is provided so as to be in contact with the first electrode. Light emission is obtained when a voltage is applied such that a potential of the second electrode becomes higher than a potential of the first electrode.
摘要翻译：本发明的目的是提供一种可以在低电压下驱动的发光元件。本发明的其他目的是提供一种具有高发光效率的发光元件; 具有高亮度的发光元件; 具有长寿命发光的发光元件; 具有降低的功耗的发光元件和电子设备; 以及可以以低成本制造的发光元件和电子设备。发光元件在第一电极和第二电极之间具有发光层和阻挡层，发光层含有基材和杂质元素，并且阻挡层设置成与第一电极和第二电极接触。电极。当施加电压使得第二电极的电位变得高于第一电极的电位时获得发光。

2. 发明申请

US20070190235A1 FILM FORMING APPARATUS, FILM FORMING METHOD, AND MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT 审中-公开
标题翻译：薄膜成型装置，薄膜成型方法和发光元件的制造方法
公开(公告)号：US20070190235A1
公开(公告)日：2007-08-16
申请号：US11671225
申请日：2007-02-05
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA , Rie MATSUBARA , Takahiro KAWAKAMI
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA , Rie MATSUBARA , Takahiro KAWAKAMI
IPC分类号： B05D5/12 , B05D5/06 , C23C8/00 , C23C16/00
CPC分类号： H01L51/001 , B05D1/60 , B05D5/061 , C23C14/24 , H01L51/0027
摘要： An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.
摘要翻译：本发明的目的是提供一种用于形成缺陷少的膜的成膜方法，并且提供一种质量均匀的膜形成方法。此外，另一个目的是提供一种能够以低电压驱动的发光元件的制造方法。此外，另一个目的是提供一种具有高发光效率的发光元件的制造方法。可以通过将基板固定到基板保持单元上，使得基板的表面的至少一部分被暴露，从填充有气相沉积的蒸发源蒸发蒸镀材料，照射用激光束蒸发的蒸镀材料，将该蒸镀材料沉积在基板的表面上。

3. 发明申请

US20070194306A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：发光元件，发光装置和电子设备
公开(公告)号：US20070194306A1
公开(公告)日：2007-08-23
申请号：US11674428
申请日：2007-02-13
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
IPC分类号： H01L29/08
CPC分类号： C09K11/08 , H01L51/5088 , H05B33/22
摘要： It is an object to provide a light emitting element capable of low-voltage driving; with high luminous efficiency; with high emission luminance; and with long emission lifetime. It is another object to provide a light emitting device and an electronic appliance in which power consumption is reduced; and which can be manufactured at low cost. A light emitting element is provided, including a light emitting layer and a layer including a composite material between a first electrode and a second electrode, where the light emitting layer includes a base material and an impurity element, the layer including the composite material includes an organic compound and an inorganic compound, the layer including the composite material is provided to be in contact with the second electrode, and light emission is obtained by application of a voltage so that an electric potential of the second electrode is higher than that of the first electrode.
摘要翻译：本发明的目的是提供一种能够进行低电压驱动的发光元件。发光效率高; 具有高发光亮度; 并具有长的发光寿命。另一个目的是提供一种减少功耗的发光装置和电子设备; 并且可以以低成本制造。提供了一种发光元件，其包括发光层和在第一电极和第二电极之间包括复合材料的层，其中发光层包括基底材料和杂质元素，所述包括复合材料的层包括有机化合物和无机化合物，包括复合材料的层被设置为与第二电极接触，并且通过施加电压获得发光，使得第二电极的电位高于第一电极的电位电极。

4. 发明申请

US20120280230A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20120280230A1
公开(公告)日：2012-11-08
申请号：US13552805
申请日：2012-07-19
申请人： Kengo AKIMOTO , Junichiro SAKATA , Shunpei YAMAZAKI
发明人： Kengo AKIMOTO , Junichiro SAKATA , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L27/1225 , H01L29/7869
摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.
摘要翻译：本发明的目的是提供一种用于制造具有稳定电特性并使用氧化物半导体形成的薄膜晶体管的高可靠性半导体器件的方法。一种制造半导体器件的方法包括以下步骤：在绝缘表面上，在栅极上形成氧化物半导体膜，其中栅极绝缘膜置于氧化物半导体膜和栅电极之间; 在所述氧化物半导体膜上形成包括钛，钼和钨中的至少一种的第一导电膜; 在所述第一导电膜上形成包含具有比氢更低的电负性的金属的第二导电膜; 通过蚀刻第一导电膜和第二导电膜形成源电极和漏电极; 以及在所述氧化物半导体膜，所述源电极和所述漏电极上方形成与所述氧化物半导体膜接触的绝缘膜。

5. 发明申请

US20120149147A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120149147A1
公开(公告)日：2012-06-14
申请号：US13399369
申请日：2012-02-17
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroki OHARA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroki OHARA
IPC分类号： H01L21/36
CPC分类号： H01L21/465 , H01L21/02565 , H01L21/28176 , H01L21/324 , H01L21/477 , H01L29/04 , H01L29/045 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/78642 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
摘要翻译：一种用于大功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的杂质如水分或氢。接下来，为了进一步减少氧化物半导体膜中的杂质，例如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后，第二热处理为在暴露的氧化物半导体膜上进行。

6. 发明申请

US20110210328A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20110210328A1
公开(公告)日：2011-09-01
申请号：US13104548
申请日：2011-05-10
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/66969 , H01L29/78696
摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

7. 发明申请

US20110210324A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110210324A1
公开(公告)日：2011-09-01
申请号：US12869327
申请日：2010-08-26
申请人： Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
发明人： Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
IPC分类号： H01L33/16
CPC分类号： H01L27/1225 , H01L27/322 , H01L27/3262
摘要： It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element.
摘要翻译：本发明的目的是提供一种在一个衬底上形成多种电路的发光器件，并且提供与多种电路的特性对应的多种薄膜晶体管。将其中与源电极层和漏电极层重叠的氧化物半导体层用于像素的反转共面薄膜晶体管，并且将沟道蚀刻薄膜晶体管用于驱动器电路。像素薄膜晶体管和与像素薄膜晶体管电连接以与发光元件重叠的发光元件设置滤色器层。

8. 发明申请

US20110124153A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110124153A1
公开(公告)日：2011-05-26
申请号：US12948222
申请日：2010-11-17
申请人： Miyuki HOSOBA , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
发明人： Miyuki HOSOBA , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
IPC分类号： H01L21/20
CPC分类号： H01L29/78696 , G02F1/133528 , G02F1/1339 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2001/133302 , G02F2001/133531 , G02F2201/121 , G02F2201/123 , G09G3/3677 , G09G2310/0286 , G09G2310/08 , H01L21/02107 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02672 , H01L21/324 , H01L21/477 , H01L21/67115 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
摘要翻译：目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。

9. 发明申请

US20110114942A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110114942A1
公开(公告)日：2011-05-19
申请号：US12943558
申请日：2010-11-10
申请人： Kengo AKIMOTO , Junichiro SAKATA , Yoshiaki OIKAWA , Shunpei YAMAZAKI
发明人： Kengo AKIMOTO , Junichiro SAKATA , Yoshiaki OIKAWA , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/45
摘要： It is an object to provide a method for manufacturing a highly reliable semiconductor device having a thin film transistor formed using an oxide semiconductor and having stable electric characteristics. The semiconductor device includes an oxide semiconductor film overlapping with a gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film. The source electrode and the drain electrode include a mixture, metal compound, or alloy containing one or more of a metal with a low electronegativity such as titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum. The concentration of hydrogen in the source electrode and the drain electrode is 1.2 times, preferably 5 times or more as high as that of hydrogen in the oxide semiconductor film.
摘要翻译：本发明的目的是提供一种用于制造具有使用氧化物半导体形成并且具有稳定的电特性的薄膜晶体管的高度可靠的半导体器件的方法。半导体器件包括与栅电极重叠的氧化物半导体膜，其间插入有栅极绝缘膜; 以及与氧化物半导体膜接触的源电极和漏电极。源电极和漏极包括含有一种或多种具有低电负性的金属如钛，镁，钇，铝，钨和钼的混合物，金属化合物或合金。源电极和漏电极中的氢浓度是氧化物半导体膜中的氢的浓度的1.2倍，优选为5倍以上。

10. 发明申请

US20110084271A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110084271A1
公开(公告)日：2011-04-14
申请号：US12899962
申请日：2010-10-07
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Kengo AKIMOTO , Kosei NODA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Kengo AKIMOTO , Kosei NODA
IPC分类号： H01L29/12 , H01L33/08 , B82Y99/00
CPC分类号： H01L27/1225 , B82Y30/00 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L29/45 , H01L29/4908
摘要： Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer.
摘要翻译：公开了一种高可靠性的半导体器件及其制造方法，其通过使用具有良好的电特性和高可靠性的晶体管作为开关元件来实现。半导体器件包括驱动电路部分和一个衬底上的像素部分，并且像素部分包括透光底栅晶体管。透光底栅晶体管包括：透明栅极电极层; 在所述栅极电极层上的氧化物半导体层，所述氧化物半导体层的表面层包括微晶纳米晶体组; 以及形成在所述氧化物半导体层上的源极和漏极电极层，所述源极和漏极电极层包括透光氧化物导电层。

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