专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4717637A Electrophotographic photosensitive member using microcrystalline silicon 失效
标题翻译：使用微晶硅的电子照相感光构件
公开(公告)号：US4717637A
公开(公告)日：1988-01-05
申请号：US877318
申请日：1986-06-23
申请人： Shuji Yoshizawa , Wataru Mitani , Mariko Yamamoto , Akira Sanjoh , Tatsuya Ikezue
发明人： Shuji Yoshizawa , Wataru Mitani , Mariko Yamamoto , Akira Sanjoh , Tatsuya Ikezue
IPC分类号： G03G5/082 , G03G5/14
CPC分类号： G03G5/08235
摘要： In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate; a first layer of a photoconductive layer on the barrier layer, and a second layer on the first layer. Formed of microcrystalline silicon containing hydrogen, the first layer is highly sensitive to long-wavelength light. The second layer contains hydrogen and at least one element selected from carbon, oxygen, and nitrogen. The barrier layer is formed of microcrystalline silicon containing an element included in group III or V of the periodic table. The rectifying action of the barrier layer prevents carriers from being injected into the photoconductive layer from the substrate side. Containing carbon, oxygen, or nitrogen, the barrier layer has high dark resistance and chargeability.
摘要翻译：在根据本发明的电子照相感光构件中，在导电基板上形成阻挡层; 阻挡层上的第一层光电导层，以及第一层上的第二层。由含有氢的微晶硅形成，第一层对长波长光是高度敏感的。第二层含有氢和选自碳，氧和氮的至少一种元素。阻挡层由含有元素周期表Ⅲ或Ⅴ族元素的微晶硅形成。阻挡层的整流作用可防止载流子从基板侧注入光电导层。含有碳，氧或氮的阻挡层具有高的暗电阻和带电性。

2. 发明授权

US4678731A Electrophotographic photosensitive member having barrier layer comprising microcrystalline silicon containing hydrogen 失效
标题翻译：具有包含含有氢的微晶硅的势垒层的电子照相感光构件
公开(公告)号：US4678731A
公开(公告)日：1987-07-07
申请号：US877519
申请日：1986-06-23
申请人： Shuji Yoshizawa , Wataru Mitani , Mariko Yamamoto , Akira Sanjoh , Tatsuya Ikezue
发明人： Shuji Yoshizawa , Wataru Mitani , Mariko Yamamoto , Akira Sanjoh , Tatsuya Ikezue
IPC分类号： G03G5/082 , G03G5/14
CPC分类号： G03G5/08228 , G03G5/08242 , Y10S430/146
摘要： In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate, and a photoconductive layer on the barrier layer. Formed of microcrystalline silicon, the photoconductive layer is highly sensitive to long-wavelength light. The barrier layer is formed of microcrystalline silicon containing an element included in group III or V of the periodic table. The rectifying action of the barrier layer prevents carriers from being injected into the photoconductive layer from the substrate side. Containing carbon, oxygen, or nitrogen, the barrier layer has high dark resistance and chargeability.
摘要翻译：在根据本发明的电子照相感光构件中，在导电性基板上形成阻挡层，在阻挡层上形成光电导层。由微晶硅形成，光电导层对长波长光是高度敏感的。阻挡层由含有元素周期表Ⅲ或Ⅴ族元素的微晶硅形成。阻挡层的整流作用可防止载流子从基板侧注入到光电导层中。含有碳，氧或氮的阻挡层具有高的暗电阻和带电性。

3. 发明授权

US4713308A Electrophotographic photosensitive member using microcrystalline silicon 失效
标题翻译：使用微晶硅的电子照相感光构件
公开(公告)号：US4713308A
公开(公告)日：1987-12-15
申请号：US877383
申请日：1986-06-23
申请人： Shuji Yoshizawa , Wataru Mitani , Mariko Yamamoto , Akira Sanjoh , Tatsuya Ikezue
发明人： Shuji Yoshizawa , Wataru Mitani , Mariko Yamamoto , Akira Sanjoh , Tatsuya Ikezue
IPC分类号： G03G5/082 , G03G5/14
CPC分类号： G03G5/08235
摘要： In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate, and a photoconductive layer on the barrier layer. The photoconductive layer is formed of a microcrystalline silicon layer, whose crystallinity varies all the way through its thickness. The higher the crystallinity of the microcrystalline silicon layer, the more distinguishable are the crystalline properties, the narrower is the optical band gap, and the higher is the sensitivity to long-wavelength light. If the crystallinity becomes lower, then the amorphous properties are enhanced, and the resistance is increased in proportion. Thus, the chargeability and the sensitivity to long-wavelength light of the microcrystalline silicon layer can be improved by varying its crystallinity in the photoconductive layer.
摘要翻译：在根据本发明的电子照相感光构件中，在导电性基板上形成阻挡层，在阻挡层上形成光电导层。光电导层由微晶硅层形成，其结晶度一直在其厚度上变化。微晶硅层的结晶度越高，晶体性质越明显，光学带隙越窄，对长波长光的敏感性越高。如果结晶度降低，则非晶态性能得到提高，并且电阻按比例增加。因此，可以通过改变其在光电导层中的结晶度来提高微晶硅层的带电性和对长波长光的灵敏度。

4. 发明授权

US5143807A Electrophotographic photoreceptor with superlattic barrier layer 失效
标题翻译：具有超薄屏障层的电子照相感光体
公开(公告)号：US5143807A
公开(公告)日：1992-09-01
申请号：US408384
申请日：1989-09-18
申请人： Shuji Yoshizawa , Tatsuya Ikezue
发明人： Shuji Yoshizawa , Tatsuya Ikezue
IPC分类号： G03G5/082
CPC分类号： G03G5/08264 , G03G5/08292
摘要： An electrophotographic photoreceptor is disclosed which is constituted by a conductive substrate, a barrier layer formed thereon, and a photoconductive layer, formed on the barrier layer, for generating photocarriers upon radiation of light. A portion of the barrier layer is formed by alternately stacking first thin films consisting of amorphous or microcrystalline silicon containing an element which controls a conductivity type and second thin films, these having a band gap wider than that of the first thin film. A multilayered structure made up of the first and second thin films has a superlattice structure.
摘要翻译：公开了一种电子照相感光体，其由形成在其上的导电基板，阻挡层和形成在阻挡层上的光电导层构成，用于在光照射时产生光载流子。阻挡层的一部分通过交替地堆叠由包含控制导电类型的元素的非晶或微晶硅构成的第一薄膜和具有比第一薄膜宽的带隙的第二薄膜的第二薄膜来形成。由第一和第二薄膜构成的多层结构具有超晶格结构。

5. 发明授权

US4804605A Electrophotographic superlattice photoreceptor 失效
标题翻译：电子照相超晶格感光体
公开(公告)号：US4804605A
公开(公告)日：1989-02-14
申请号：US79467
申请日：1987-07-30
申请人： Shuji Yoshizawa , Tatsuya Ikezue
发明人： Shuji Yoshizawa , Tatsuya Ikezue
IPC分类号： C23C16/24 , C23C16/32 , G03G5/082 , G03G5/14
CPC分类号： C23C16/325 , C23C16/24 , G03G5/08214
摘要： An electrophotographic photoreceptor is constituted by forming a barrier layer, a photoconductive layer, and a surface layer on an aluminum substrate drum, in the order stated. The photoconductive layer of this electrophotographic photoreceptor has a superlattice layer of a hetero-junction constituted by alternately stacking thin a-Si:H layers and thin .mu.c-SiC:H layers. In this superlattice structure, the optical bandgaps of the respective layers differ from each other, a-Si:H serves as a potential barrier, and .mu.c-SiC:H serves as a potential well. When light is radiated on the photoconductive layer, a large number of photocarriers are generated. The photocarriers having one polarity pass through the barrier by way of a tunneling effect, and propagate in the photoconductive layer.
摘要翻译：电子照相感光体按照所述顺序在铝基材滚筒上形成阻挡层，光电导层和表面层而构成。该电子照相感光体的光电导层具有通过交替堆叠薄的a-Si：H层和薄的μ-SiC-H层构成的异质结的超晶格层。在这种超晶格结构中，各层的光学带隙彼此不同，a-Si：H用作势垒，并且μc-SiC：H用作势阱。当光照射在光电导层上时，产生大量的光载流子。具有一个极性的光载流子通过隧道效应穿过屏障，并在光电导层中传播。

6. 发明授权

US4810605A Electrophotographic superlattice photoreceptor 失效
标题翻译：电子照相超晶格感光体
公开(公告)号：US4810605A
公开(公告)日：1989-03-07
申请号：US114738
申请日：1987-10-30
申请人： Shuji Yoshizawa , Tatsuya Ikezue
发明人： Shuji Yoshizawa , Tatsuya Ikezue
IPC分类号： G03G5/082 , G03G5/14
CPC分类号： G03G5/08271
摘要： An electrophotographic photoreceptor includes a conductive substrate and a photoconductive layer, provided on the conductive substrate, for generating photocarriers upon light radiation. At least part of the photoconductive layer contains and has a plurality of thin microcrystalline semiconductor layers containing silicon as a major component, and at least one element selected from the group consisting of carbon, oxygen, and nitrogen. The adjacent thin microcrystalline semiconductor layers have different element concentrations. The element concentrations are continuously changed near the interfaces of the thin microcrystalline semiconductor layers.
摘要翻译：电子照相感光体包括设置在导电基板上的导电基板和光电导层，用于在光辐射时产生光载流子。光电导层的至少一部分含有并具有多个以硅为主要成分的薄微晶半导体层和至少一种选自碳，氧和氮的元素。相邻的微晶半导体层具有不同的元素浓度。元件浓度在薄微晶半导体层的界面附近连续变化。

7. 发明授权

US4803139A Electrophotographic photoreceptor 失效
标题翻译：电子照相感光体
公开(公告)号：US4803139A
公开(公告)日：1989-02-07
申请号：US79763
申请日：1987-07-30
申请人： Shuji Yoshizawa , Tatsuya Ikezue
发明人： Shuji Yoshizawa , Tatsuya Ikezue
IPC分类号： G03G5/08 , C23C16/32 , G03G5/082 , G03G5/14
CPC分类号： G03G5/08264 , C23C16/325 , G03G5/08214
摘要： An electrophotographic photoreceptor is constituted by forming a barrier layer, a photoconductive layer, and a surface layer on an aluminum substrate drum, in the order stated. The photoconductive layer of this electrophotographic photoreceptor has a superlattice structure constituted by alternately stacking thin a-SiC:H layers having carbon contents different from each other. In this superlattice structure, the optical bandgaps of the respective layers differ from each other, a-SiC:H having a higher carbon content serves as a potential barrier, and a-SiC:H having a lower carbon content serves as a potential well. When light is radiated on the photoconductive layer, a large number of photocarriers are generated. The photocarriers having one polarity pass through the barrier by way of a tuneling effect, and propagate in the photoconductive layer.
摘要翻译：电子照相感光体按照所述顺序在铝基材滚筒上形成阻挡层，光电导层和表面层而构成。该电子照相感光体的光电导层具有通过交替层叠具有彼此不同的碳含量的a-SiC：H层薄的超晶格结构。在该超晶格结构中，各层的光学带隙彼此不同，具有较高碳含量的a-SiC：H用作势垒，具有较低碳含量的a-SiC：H用作势阱。当光照射在光电导层上时，产生大量的光载流子。具有一个极性的光载流子通过保护效应穿过屏障，并在光电导层中传播。

8. 发明授权

US4851312A Electrophotographic photoreceptor 失效
标题翻译：电子照相感光体
公开(公告)号：US4851312A
公开(公告)日：1989-07-25
申请号：US137342
申请日：1987-12-23
申请人： Shuji Yoshizawa , Tatsuya Ikezue
发明人： Shuji Yoshizawa , Tatsuya Ikezue
IPC分类号： G03G5/08 , G03G5/082
CPC分类号： G03G5/08264
摘要： An electrophotographic photoreceptor comprising a conductive substrate and a photoconductive layer disposed on the conductive substrate to generate photocarriers upon light radiation. The photoconductive layer comprises a charge-generating layer and a charge-retaining layer. At least part of the charge-generating layer has a plurality of thin microcrystalline semiconductor layers containing silicon as a major constituent and at least one element selected from the group consisting of carbon, hydrogen, and nitrogen. The plurality of microcrystalline layers produce a superlattice structure. The adjacent thin microcrystalline semiconductor layers have different element concentrations. At least part of the charge-retaining layer has a first amorphous semiconductor layer containing silicon as a major constituent and a second amorphous semiconductor layer containing silicon as a major constituent, and at least one element selected from the group consisting of carbon, oxygen, and nitrogen.
摘要翻译：一种电子照相感光体，包括导电衬底和设置在导电衬底上的光电导层，以在光辐射时产生光载流子。光电导层包括电荷产生层和电荷保持层。电荷产生层的至少一部分具有含有硅作为主要成分的多个薄微晶半导体层和选自碳，氢和氮的至少一种元素。多个微晶层产生超晶格结构。相邻的微晶半导体层具有不同的元素浓度。电荷保持层的至少一部分具有含有硅作为主要成分的第一非晶半导体层和以硅为主要成分的第二非晶半导体层，以及选自碳，氧，和氮。

9. 发明授权

US4803141A Electrophotographic superlattice photoreceptor 失效
标题翻译：电子照相超晶格感光体
公开(公告)号：US4803141A
公开(公告)日：1989-02-07
申请号：US79463
申请日：1987-07-30
申请人： Shuji Yoshizawa , Tatsuya Ikezue
发明人： Shuji Yoshizawa , Tatsuya Ikezue
IPC分类号： G03G5/082 , H01L31/0352 , H01L31/09 , H01L31/20 , G03G5/14
CPC分类号： B82Y20/00 , G03G5/08214 , H01L31/035245 , H01L31/095 , H01L31/202 , Y02E10/50
摘要： An electrophotographic photoreceptor is constituted by forming a barrier layer, a photoconductive layer including a charge-generating layer and a charge-transportation layer, and a surface layer on an aluminum substrate drum, in the order stated. The charge-generating layer of this electrophotographic photoreceptor has a superlattice structure of a heterojunction constituted by alternately stacking thin a-Si:H layers and thin .mu.c-SiC:H layers. In this superlattice structure, the optical bandgaps of the respective layers differ from each other, a-Si:H serves as a potential barrier, and .mu.c-SiC:H serves as a potential well. When light is radiated on the charge-generating layer, a large number of photocarriers are generated. The photocarriers having one polarity pass through the barrier by way of a tunneling effect, and propagate in the charge-generating layer. In addition, the charge-transporting layer is formed by a-Si:H or .mu.c-Si:H, and hence more easily enables allows photocarriers generated in the charge-generating layer to reach the conductive substrate.
摘要翻译：电子照相感光体按照所述顺序形成阻挡层，包括电荷产生层和电荷输送层的光电导层和铝基底鼓上的表面层。该电子照相感光体的电荷产生层具有通过交替层叠薄的a-Si：H层和薄的μ-SiC-H层构成的异质结的超晶格结构。在这种超晶格结构中，各层的光学带隙彼此不同，a-Si：H用作势垒，并且μc-SiC：H用作势阱。当在电荷产生层上照射光时，产生大量的光载流子。具有一个极性的光载流子通过隧道效应穿过屏障，并在电荷产生层中传播。此外，电荷输送层由a-Si：H或μc-Si：H形成，因此更容易实现在电荷产生层中产生的光载流子到达导电性基板。

10. 发明授权

US4859552A Electrophotographic photoreceptor with superlattice structure 失效
标题翻译：具超晶格结构的电子照相感光体
公开(公告)号：US4859552A
公开(公告)日：1989-08-22
申请号：US156026
申请日：1988-02-16
申请人： Shuji Yoshizawa , Tatsuya Ikezue
发明人： Shuji Yoshizawa , Tatsuya Ikezue
IPC分类号： G03G5/082
CPC分类号： G03G5/08264
摘要： An electrophotographic photoreceptor constituted by a conductive substrate, and a photoconductive layer, provided on the conductive substrate, for generating photocarriers upon radiation of light is disclosed. The photoconductive layer has a charge-generating layer and a charge-retaining layer. The charge-generating layer comprises a semiconductor containing silicon as a major constituent. The charge-retaining layer comprises a multilayered body constituted by alternately stacking first amorphous semiconductor layers containing silicon as a major constituent and second amorphous semiconductor layers containing silicon as a major constituent and at least one element selected from the group consisting of carbon, oxygen, and nitrogen. A concentration of the element is changed in a direction of thickness of the charge-retaining layer for each second amorphous semiconductor layer.
摘要翻译：公开了一种电子照相感光体，由导电基片和光电导层构成，该光电导层设置在导电基片上，用于在辐射时产生光载流子。光电导层具有电荷产生层和电荷保持层。电荷产生层包括以硅为主要成分的半导体。电荷保持层包括通过交替层叠含有硅作为主要成分的第一非晶半导体层和以硅为主要成分的第二非晶半导体层和选自碳，氧和至少一种元素的至少一种元素构成的多层体氮。元件的浓度在每个第二非晶半导体层的电荷保留层的厚度方向上改变。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式