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1. 发明申请

US20090289290A1 NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE 有权
标题翻译：具有可编程电容的非易失性存储器
公开(公告)号：US20090289290A1
公开(公告)日：2009-11-26
申请号：US12123662
申请日：2008-05-20
申请人： Shuiyuan Huang , Xuguang Wang , Dimitar V. Dimitrov , Michael Tang , Song S. Xue
发明人： Shuiyuan Huang , Xuguang Wang , Dimitar V. Dimitrov , Michael Tang , Song S. Xue
IPC分类号： H01L29/94
CPC分类号： G11C13/0069 , G11C11/5614 , G11C13/0011 , G11C2213/53 , H01L29/42324 , H01L29/7881
摘要： Non-volatile memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A second insulating layer is over the substrate and between the source region and drain region. A solid electrolyte layer is between the first insulating layer and second insulating layer. The solid electrolyte layer has a capacitance that is controllable between at least two states. A first electrode is electrically coupled to a first side of the solid electrolyte layer and is electrically coupled to a voltage source. A second electrode is electrically coupled to a second side of the solid electrolyte layer and is electrically coupled to the voltage source. Multi-bit memory units are also disclosed.
摘要翻译：公开了具有可编程电容的非易失性存储器。说明性数据存储单元包括包括源极区和漏极区的衬底。第一绝缘层在衬底上。第二绝缘层在衬底上并且在源极区和漏极区之间。固体电解质层位于第一绝缘层和第二绝缘层之间。固体电解质层具有在至少两种状态之间可控的电容。第一电极电耦合到固体电解质层的第一侧并且电耦合到电压源。第二电极电耦合到固体电解质层的第二侧并且电耦合到电压源。还公开了多位存储器单元。

2. 发明申请

US20110267873A1 NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE 审中-公开
标题翻译：具有可编程电容的非易失性存储器
公开(公告)号：US20110267873A1
公开(公告)日：2011-11-03
申请号：US13151440
申请日：2011-06-02
申请人： Shuiyuan Huang , Xuguang Wang , Dimitar V. Dimitrov , Michael Tang , Song S. Xue
发明人： Shuiyuan Huang , Xuguang Wang , Dimitar V. Dimitrov , Michael Tang , Song S. Xue
IPC分类号： G11C11/34 , G11C11/00 , H01L45/00
CPC分类号： G11C13/0069 , G11C11/5614 , G11C13/0011 , G11C2213/53 , H01L29/42324 , H01L29/7881
摘要： Non-volatile memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A second insulating layer is over the substrate and between the source region and drain region. A solid electrolyte layer is between the first insulating layer and second insulating layer. The solid electrolyte layer has a capacitance that is controllable between at least two states. A first electrode is electrically coupled to a first side of the solid electrolyte layer and is electrically coupled to a voltage source. A second electrode is electrically coupled to a second side of the solid electrolyte layer and is electrically coupled to the voltage source. Multi-bit memory units are also disclosed.
摘要翻译：公开了具有可编程电容的非易失性存储器。说明性数据存储单元包括包括源极区和漏极区的衬底。第一绝缘层在衬底上。第二绝缘层在衬底上并且在源极区和漏极区之间。固体电解质层位于第一绝缘层和第二绝缘层之间。固体电解质层具有在至少两种状态之间可控的电容。第一电极电耦合到固体电解质层的第一侧并且电耦合到电压源。第二电极电耦合到固体电解质层的第二侧并且电耦合到电压源。还公开了多位存储器单元。

3. 发明申请

US20120104348A1 PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING 有权
标题翻译：通过选择性通道形成可编程金属化记忆细胞
公开(公告)号：US20120104348A1
公开(公告)日：2012-05-03
申请号：US13348253
申请日：2012-01-11
申请人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
发明人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
IPC分类号： H01L47/00
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1625 , H01L45/1633 , H01L45/1658 , H01L45/1675
摘要： Methods for making a programmable metallization memory cell are disclosed.
摘要翻译：公开了制造可编程金属化存储单元的方法。

4. 发明授权

US08399908B2 Programmable metallization memory cells via selective channel forming 有权
标题翻译：可编程金属化存储单元通过选择性通道形成
公开(公告)号：US08399908B2
公开(公告)日：2013-03-19
申请号：US13348253
申请日：2012-01-11
申请人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
发明人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
IPC分类号： H01L29/66
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1625 , H01L45/1633 , H01L45/1658 , H01L45/1675
摘要： Methods for making a programmable metallization memory cell are disclosed.
摘要翻译：公开了制造可编程金属化存储单元的方法。

5. 发明申请

US20100006813A1 PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING 有权
标题翻译：通过选择性通道形成可编程金属化记忆细胞
公开(公告)号：US20100006813A1
公开(公告)日：2010-01-14
申请号：US12170519
申请日：2008-07-10
申请人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
发明人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1625 , H01L45/1633 , H01L45/1658 , H01L45/1675
摘要： A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a programmable metallization memory cell are disclosed.
摘要翻译：一种可编程金属化存储单元，其具有有孔绝缘层，该绝缘层包括位于有源电极和惰性电极之间的穿过其中的至少一个孔。超离子簇存在于至少一个孔内，并且可以延伸经过至少一个孔。另外，公开了制造可编程金属化存储单元的方法。

6. 发明授权

US08334165B2 Programmable metallization memory cells via selective channel forming 有权
标题翻译：可编程金属化存储单元通过选择性通道形成
公开(公告)号：US08334165B2
公开(公告)日：2012-12-18
申请号：US12761899
申请日：2010-04-16
申请人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
发明人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
IPC分类号： H01L21/00
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1625 , H01L45/1633 , H01L45/1658 , H01L45/1675
摘要： Methods for making a programmable metallization memory cell are disclosed.
摘要翻译：公开了制造可编程金属化存储单元的方法。

7. 发明授权

US08097902B2 Programmable metallization memory cells via selective channel forming 有权
标题翻译：可编程金属化存储单元通过选择性通道形成
公开(公告)号：US08097902B2
公开(公告)日：2012-01-17
申请号：US12170519
申请日：2008-07-10
申请人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
发明人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
IPC分类号： H01L29/66
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1625 , H01L45/1633 , H01L45/1658 , H01L45/1675
摘要： A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a programmable metallization memory cell are disclosed.
摘要翻译：一种可编程金属化存储单元，其具有有孔绝缘层，该绝缘层包括位于有源电极和惰性电极之间的穿过其中的至少一个孔。超离子簇存在于至少一个孔内，并且可以延伸经过至少一个孔。另外，公开了制造可编程金属化存储单元的方法。

8. 发明申请

US20100197104A1 PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING 有权
标题翻译：通过选择性通道形成可编程金属化记忆细胞
公开(公告)号：US20100197104A1
公开(公告)日：2010-08-05
申请号：US12761899
申请日：2010-04-16
申请人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
发明人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
IPC分类号： H01L21/02
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1625 , H01L45/1633 , H01L45/1658 , H01L45/1675
摘要： Methods for making a programmable metallization memory cell are disclosed.
摘要翻译：公开了制造可编程金属化存储器单元的方法。

9. 发明申请

US20100309717A1 NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE 失效
标题翻译：具有可编程电容的非易失性多位存储器
公开(公告)号：US20100309717A1
公开(公告)日：2010-12-09
申请号：US12857717
申请日：2010-08-17
申请人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
发明人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/085 , G11C16/0475 , H01L45/1206 , H01L45/1266 , H01L45/143 , H01L45/1658
摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.
摘要翻译：公开了具有可编程电容的非易失性多位存储器。说明性的数据存储单元包括一个包括源极区和漏极区的衬底; 以及在衬底上以及在源极区和漏极区之间的栅叠层结构。栅堆叠结构包括第一固体电解质电池和第二固体电解质电池。固体电解质电池具有在至少两个状态之间可控制的电容。栅极接触层电耦合到电压源。第一固体电解质电池和第二固体电解质电池将栅极接触层与基板分离。

10. 发明申请

US20090289240A1 NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE 有权
标题翻译：具有可编程电容的非易失性多位存储器
公开(公告)号：US20090289240A1
公开(公告)日：2009-11-26
申请号：US12123685
申请日：2008-05-20
申请人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
发明人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , G11C16/0475 , H01L45/1206 , H01L45/1266 , H01L45/143 , H01L45/1658
摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer. A gate contact layer is over the substrate and between the source region and drain region and in electrical connection with the first anode and the second anode. The gate contact layer is electrically coupled to a voltage source.
摘要翻译：公开了具有可编程电容的非易失性多位存储器。说明性数据存储单元包括包括源极区和漏极区的衬底。第一绝缘层在衬底上。第一固体电解质电池在绝缘层之上并且具有在至少两个状态之间可控并且在源极区附近的电容。第二固体电解质电池在绝缘层之上，并且具有在至少两个状态之间可控的并且在漏极区附近的电容或电阻。绝缘元件将第一固体电解质电池与第二固体电解质电池隔离。第一阳极电耦合到第一固体电解质电池。第一固体电解质电池在阳极和绝缘层之间。第二阳极电耦合到第二固体电解质电池。第二固体电解质电池在阳极和绝缘层之间。栅极接触层在衬底上并且在源极区域和漏极区域之间并且与第一阳极和第二阳极电连接。栅极接触层电耦合到电压源。

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