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1. 发明授权

US08101526B2 Method of making diamond nanopillars 有权
标题翻译：制作金刚石纳米柱的方法
公开(公告)号：US08101526B2
公开(公告)日：2012-01-24
申请号：US12046673
申请日：2008-03-12
申请人： Shuit-Tong Lee , Wenjun Zhang , Igor Bello , You-Sheng Zou
发明人： Shuit-Tong Lee , Wenjun Zhang , Igor Bello , You-Sheng Zou
IPC分类号： H01L21/461
CPC分类号： C30B29/04 , B29C59/14 , B82Y15/00 , B82Y30/00 , C23C16/27 , C23C16/56 , C30B25/105 , C30B29/60 , Y10S438/947
摘要： A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.
摘要翻译：一种用于制造金刚石纳米柱的方法包括在基底上形成金刚石膜，在金刚石膜上沉积金属掩模层，以及蚀刻涂覆有金属掩模层的金刚石膜，以在掩模层下形成金刚石纳米柱。该方法还可以包括在形成金刚石膜之前在衬底上形成金刚石核。通常使用半导体衬底，绝缘衬底，金属衬底或合金衬底。

2. 发明申请

US20090233445A1 METHOD OF MAKING DIAMOND NANOPILLARS 有权
标题翻译：制备金刚石纳米线的方法
公开(公告)号：US20090233445A1
公开(公告)日：2009-09-17
申请号：US12046673
申请日：2008-03-12
申请人： Shuit-Tong Lee , Wenjun Zhang , Igor Bello , You-Sheng Zou
发明人： Shuit-Tong Lee , Wenjun Zhang , Igor Bello , You-Sheng Zou
IPC分类号： H01L21/311 , C23F1/02
CPC分类号： C30B29/04 , B29C59/14 , B82Y15/00 , B82Y30/00 , C23C16/27 , C23C16/56 , C30B25/105 , C30B29/60 , Y10S438/947
摘要： A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.
摘要翻译：一种用于制造金刚石纳米柱的方法包括在基底上形成金刚石膜，在金刚石膜上沉积金属掩模层，以及蚀刻涂覆有金属掩模层的金刚石膜，以在掩模层下形成金刚石纳米柱。该方法还可以包括在形成金刚石膜之前在衬底上形成金刚石核。通常使用半导体衬底，绝缘衬底，金属衬底或合金衬底。

3. 发明授权

US08158011B2 Method of fabrication of cubic boron nitride conical microstructures 有权
标题翻译：立方氮化硼圆锥形微结构的制造方法
公开(公告)号：US08158011B2
公开(公告)日：2012-04-17
申请号：US12250716
申请日：2008-10-14
申请人： Wen-Jun Zhang , Igor Bello , Shuit-Tong Lee , You-Sheng Zou , Yat Ming Chong , Qing Ye
发明人： Wen-Jun Zhang , Igor Bello , Shuit-Tong Lee , You-Sheng Zou , Yat Ming Chong , Qing Ye
IPC分类号： C25F3/00 , B44C1/22
CPC分类号： C23C16/0254 , C23C16/274 , C23C16/342 , C30B23/02 , C30B25/02 , C30B25/105 , C30B29/04 , C30B29/403
摘要： A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the cBN film, and (e) etching the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.
摘要翻译：在金刚石层状基板上形成立方氮化硼（cBN）的锥形结构。形成cBN结构的方法包括以下步骤：（a）在衬底上形成金刚石核，（b）在衬底上生长一层金刚石膜，（c）在所述金刚石层上沉积cBN膜，（d）在cBN膜上沉积纳米级蚀刻掩模，和（e）蚀刻沉积的cBN膜。具体而言，立方氮化硼结构在探针分析和测试技术方面具有巨大的潜在应用，包括扫描探针显微镜（SPM）和纳米压痕，纳米力学和纳米加工在进行中的微机电系统（MEMS）和纳米机电系统（NEMS）场电子发射，真空微电子器件，传感器和不同电极系统，包括用于电化学的电极系统。

4. 发明授权

US07579759B2 Surface acoustic wave (SAW) devices based on cubic boron nitride/diamond composite structures 有权
标题翻译：基于立方氮化硼/金刚石复合结构的表面声波（SAW）器件
公开(公告)号：US07579759B2
公开(公告)日：2009-08-25
申请号：US11760996
申请日：2007-06-11
申请人： Shuit-Tong Lee , Wen-Jun Zhang , You-Sheng Zou , Igor Bello , Kwok Leung Ma , Kar Man Leung , Yat Ming Chong
发明人： Shuit-Tong Lee , Wen-Jun Zhang , You-Sheng Zou , Igor Bello , Kwok Leung Ma , Kar Man Leung , Yat Ming Chong
IPC分类号： H01L41/09
CPC分类号： H03H9/02582 , H03H9/02574
摘要： A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.
摘要翻译：公开了一种由cBN /金刚石复合结构制成的表面声波（SAW）器件及其制造方法。在基于立方氮化硼和金刚石复合结构的SAW器件中，金刚石硬质层包括随机取向的多晶金刚石（poly-D），定向（异质外延）金刚石，单晶金刚石晶片和纳米晶金刚石（nano-D）膜。具有接近金刚石声速的cBN胶片作为压电层，直接沉积在金刚石硬质层上，没有任何软sp2-BN孵育层，通过离子辅助物理气相沉积（PVD）和等离子体增强（或离子）化学气相沉积（PECVD）。由于cBN和金刚石层状材料之间的高音速和低速分散，基于立方氮化硼和金刚石复合结构的本SAW器件可以提高器件性能并在超高频范围内工作。

5. 发明申请

US20100093171A1 FABRICATION CUBIC BORON NITRIDE CONE-MICROSTRUCTURES AND THEIR ARRAYS 有权
标题翻译：制造CUBIC BORON NITRIDE CONE-MICROSTRURES和它们的阵列
公开(公告)号：US20100093171A1
公开(公告)日：2010-04-15
申请号：US12250716
申请日：2008-10-14
申请人： Wen-Jun Zhang , Igor Bello , Shuit-Tong Lee , You-Sheng Zou , Yat Ming Chong , Qing Ye
发明人： Wen-Jun Zhang , Igor Bello , Shuit-Tong Lee , You-Sheng Zou , Yat Ming Chong , Qing Ye
IPC分类号： H01L21/306 , B44C1/22
CPC分类号： C23C16/0254 , C23C16/274 , C23C16/342 , C30B23/02 , C30B25/02 , C30B25/105 , C30B29/04 , C30B29/403
摘要： A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the the cBN film, and (e) etching the the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.
摘要翻译：在金刚石层状基板上形成立方氮化硼（cBN）的锥形结构。形成cBN结构的方法包括以下步骤：（a）在衬底上形成金刚石核，（b）在衬底上生长一层金刚石膜，（c）在所述金刚石层上沉积cBN膜，（d）在cBN膜上沉积纳米级蚀刻掩模，和（e）蚀刻沉积的cBN膜。具体而言，立方氮化硼结构在探针分析和测试技术方面具有巨大的潜在应用，包括扫描探针显微镜（SPM）和纳米压痕，纳米力学和纳米加工在进行中的微机电系统（MEMS）和纳米机电系统（NEMS）场电子发射，真空微电子器件，传感器和不同电极系统，包括用于电化学的电极系统。

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