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1. 发明授权

US06897523B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06897523B2
公开(公告)日：2005-05-24
申请号：US10211705
申请日：2002-08-05
申请人： Shuichi Ueno , Haruo Furuta , Shigehiro Kuge , Hiroshi Kato
发明人： Shuichi Ueno , Haruo Furuta , Shigehiro Kuge , Hiroshi Kato
IPC分类号： H01L29/78 , H01L29/792 , H01L29/861 , H01L29/788 , H01L21/336
CPC分类号： H01L29/792 , H01L29/8616
摘要： A semiconductor device is provided which includes a diode formed of a MISFET and having a current-voltage characteristic close to that of an ideal diode. Negatively charged particles (e.g. electrons: 8a) are trapped on the drain region (2) side of a silicon nitride film (4b) sandwiched between films of silicon oxide (4a, 4c). When a bias voltage is applied between the drain and source with the negatively charged particles (8a) thus trapped and in-channel charged particles (9a) induced by them, the MISFET exhibits different threshold values for channel formation depending on whether it is a forward bias or a reverse bias. That is to say, when a reverse bias is applied, the channel forms insufficiently and the source-drain current is less likely to flow, while the channel forms sufficiently and a large source-drain current flows when a forward bias is applied. This offers a current-voltage characteristic close to that of the ideal diode.
摘要翻译：提供一种半导体器件，其包括由MISFET形成的二极管，其具有接近于理想二极管的电流 - 电压特性。负电粒子（例如电子：8a）被捕获在夹在氧化硅（4a，4c）的膜之间的氮化硅膜（4b）的漏极区（2）侧上。当在漏极和源极之间施加偏置电压时，带负电荷的颗粒（8a）被这样捕获并且由它们引起的通道内带电粒子（9a），MISFET对通道形成具有不同的阈值，取决于它是否是正向偏压或反向偏压。也就是说，当施加反向偏压时，沟道形成不充分，并且源极 - 漏极电流不太可能流动，而沟道形成充分，并且当施加正向偏压时流过大的源极 - 漏极电流。这提供了接近理想二极管的电流电压特性。

2. 发明授权

US08383427B2 Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor 有权
标题翻译：包括具有叠层结构的磁性隧道结装置及其制造方法的半导体装置
公开(公告)号：US08383427B2
公开(公告)日：2013-02-26
申请号：US13566739
申请日：2012-08-03
申请人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
发明人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译：提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。隧道绝缘膜包含氧化铝（AlOx）作为构成材料。在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。硬掩模的膜厚大于CAP层的膜厚。

3. 发明申请

US20090302404A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090302404A1
公开(公告)日：2009-12-10
申请号：US12463865
申请日：2009-05-11
申请人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
发明人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
IPC分类号： H01L29/82 , H01L21/28
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having an MTJ device excellent in operating characteristics and a manufacturing method therefor are obtained. The MTJ device is formed of a laminated structure obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower magnetic film and the upper magnetic film contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film of the MTJ device and a hard mask is formed over the CAP layer. The CAP layer contains a simple substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a simple substance of crystalline tantalum (Ta) as a constituent material. The hard mask is so formed that the film thickness thereof is larger than the film thickness of the CAP layer.
摘要翻译：获得具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜获得的层叠结构形成。下磁性膜和上磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。隧道绝缘膜包含氧化铝（AlOx）作为构成材料。在MTJ装置的上部磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）的单一物质作为构成材料，硬掩模含有作为构成材料的结晶钽（Ta）的单一物质。硬掩模被形成为使得其膜厚度大于CAP层的膜厚度。

4. 发明授权

US07180773B2 Magnetic memory device 失效
标题翻译：磁存储器件
公开(公告)号：US07180773B2
公开(公告)日：2007-02-20
申请号：US11253696
申请日：2005-10-20
申请人： Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
发明人： Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
IPC分类号： G11C11/14 , G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (⅓)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.
摘要翻译：位线的宽度和厚度分别表示为W 1和T 1，数字线的厚度表示为T 2，并且从数字线的中心到厚度方向的中心的距离在厚度方向上的MTJ元件的自由层表示为L 1。数字线的宽度表示为W 2，并且从厚度方向的位线的中心到厚度方向上的MTJ元件的自由层的中心的距离表示为L 2。距离L 1和L 2以及横截面积S 1和S 2被设定为当L 1 / L 2> = 1时，关于（1/3）（L 1 / L 2 ）满足<= S 2 / S 1 <= 1，并且当L 1 / L 2 <= 1时，满足1 <= S 2 / S 1 <= 3（L 1 / L 2）的关系。

5. 发明申请

US20060087874A1 Magnetic memory device 失效
标题翻译：磁存储器件
公开(公告)号：US20060087874A1
公开(公告)日：2006-04-27
申请号：US11253696
申请日：2005-10-20
申请人： Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
发明人： Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
IPC分类号： G11C5/06
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (⅓)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.
摘要翻译：位线的宽度和厚度分别表示为W 1和T 1，数字线的厚度表示为T 2，并且从数字线的中心到厚度方向的中心的距离在厚度方向上的MTJ元件的自由层表示为L 1。数字线的宽度表示为W 2，并且从厚度方向的位线的中心到厚度方向上的MTJ元件的自由层的中心的距离表示为L 2。距离L 1和L 2以及横截面积S 1和S 2被设定为当L 1 / L 2> = 1时，关于（1/3）（L 1 / L 2 ）满足<= S 2 / S 1 <= 1，并且当L 1 / L 2 <= 1时，满足1 <= S 2 / S 1 <= 3（L 1 / L 2）的关系。

6. 发明授权

US08546151B2 Method for manufacturing magnetic storage device and magnetic storage device 有权
标题翻译：磁存储装置和磁存储装置的制造方法
公开(公告)号：US08546151B2
公开(公告)日：2013-10-01
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译：公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤，布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

7. 发明授权

US08258592B2 Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor 有权
标题翻译：包括具有叠层结构的磁性隧道结装置及其制造方法的半导体装置
公开(公告)号：US08258592B2
公开(公告)日：2012-09-04
申请号：US12463865
申请日：2009-05-11
申请人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
发明人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译：提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。隧道绝缘膜包含氧化铝（AlOx）作为构成材料。在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。硬掩模的膜厚大于CAP层的膜厚。

8. 发明申请

US20090237989A1 MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：磁记忆装置
公开(公告)号：US20090237989A1
公开(公告)日：2009-09-24
申请号：US12476536
申请日：2009-06-02
申请人： Yoshinori OKUMURA , Shuichi Ueno , Haruo Furuta
发明人： Yoshinori OKUMURA , Shuichi Ueno , Haruo Furuta
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (1/3)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.
摘要翻译：位线的宽度和厚度分别表示为W1和T1，数字线的厚度表示为T2，从数字线的中心到厚度方向的中心到自由层的中心的距离的厚度方向上的MTJ元件表示为L1。数字线的宽度表示为W2，从厚度方向的位线的中心到厚度方向的MTJ元件的自由层的中心的距离表示为L2。距离L1和L2以及横截面积S1和S2以如下方式设定：当L1 / L2> = 1时，（1/3）（L1 / L2）<= S2 / S1 <= 1，并且当L1 / L2 <= 1时，满足1 <= S2 / S1 <= 3（L1 / L2）的关系。

9. 发明申请

US20080266939A1 Magnetic memory device 失效
标题翻译：磁存储器件
公开(公告)号：US20080266939A1
公开(公告)日：2008-10-30
申请号：US12213505
申请日：2008-06-20
申请人： Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
发明人： Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
IPC分类号： G11C11/02
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (⅓)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.
摘要翻译：位线的宽度和厚度分别表示为W 1和T 1，数字线的厚度表示为T 2，并且从数字线的中心到厚度方向的中心的距离在厚度方向上的MTJ元件的自由层表示为L 1。数字线的宽度表示为W 2，并且从厚度方向的位线的中心到厚度方向上的MTJ元件的自由层的中心的距离表示为L 2。距离L 1和L 2以及横截面积S 1和S 2被设定为当L 1 / L 2> = 1时，关于（1/3）（L 1 / L 2 ）满足<= S 2 / S 1 <= 1，并且当L 1 / L 2 <= 1时，满足1 <= S 2 / S 1 <= 3（L 1 / L 2）的关系。

10. 发明申请

US20120301975A1 SEMICONDUCTOR DEVICE INCLUDING A MAGNETIC TUNNEL JUNCTION DEVICE INCLUDING A LAMINATED STRUCTURE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：包括包括层压结构在内的磁性隧道连接装置的半导体装置及其制造方法
公开(公告)号：US20120301975A1
公开(公告)日：2012-11-29
申请号：US13566739
申请日：2012-08-03
申请人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
发明人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
IPC分类号： H01L21/02
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译：提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。隧道绝缘膜包含氧化铝（AlOx）作为构成材料。在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。硬掩模的膜厚大于CAP层的膜厚。

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