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    • 1. 发明申请
    • SWITCHGEAR
    • US20090237869A1
    • 2009-09-24
    • US12366965
    • 2009-02-06
    • Shuichi KIKUKAWAKenji TSUCHIYAYuko KAJIYAMA
    • Shuichi KIKUKAWAKenji TSUCHIYAYuko KAJIYAMA
    • H02B1/20
    • H01H33/6661H01H33/025H01H33/6606H01H2033/6668H02B1/20H02B13/0354
    • Switchgear having a vacuum-insulated switchgear 2 comprising switches having at least breaking and disconnecting functions, each placed in a unit, and solid-insulated bus bars 12 for electrically connecting the switches in each unit; an air-insulated switchgear 1 comprising switches having at least breaking and disconnecting functions, each placed in a unit, and air-insulated bus bars for electrically connecting the switches in each unit; and_the vacuum-insulated switchgear 2 and the air-insulated switchgear 1 are installed side-by-side, wherein the vacuum-insulated switchgear 2 and the air-insulated switchgear 1 are electrically connected through flexible conductors 17 which are provided between the solid-insulated bus bars 12 and the air-insulated bus bars.
    • 具有真空绝缘开关设备2的开关装置,包括具有至少断开和断开功能的开关,每个开关设置在一个单元中;以及固体绝缘母线12,用于电连接每个单元中的开关; 空气绝缘开关柜1包括具有至少断开和断开功能的开关,每个开关均放置在一个单元中,以及空气绝缘汇流条,用于电连接每个单元中的开关; 并且真空绝缘开关柜2和空气绝缘开关柜1并排安装,其中真空绝缘开关柜2和空气绝缘开关柜1通过柔性导体17电连接,柔性导体17设置在固体绝缘 母线12和空气绝缘母线。
    • 2. 发明申请
    • VACUUM INSULATED SWITCHGEAR
    • 真空绝缘开关
    • US20100195273A1
    • 2010-08-05
    • US12696624
    • 2010-01-29
    • Shuichi KIKUKAWAKenji TSUCHIYAMasato KOBAYASHI
    • Shuichi KIKUKAWAKenji TSUCHIYAMasato KOBAYASHI
    • H02B1/20
    • H02B13/0354H02B3/00H02B13/0358
    • A vacuum insulated switchgear is arranged as a panel for a power substation with the other or the others in parallel rows. the vacuum insulated switchgear comprises a housing with a switch section, a bus section, a cable section, and a control section which are partitioned by earthed metal plates respectively. The vacuum insulated switchgear comprises: a connection member provided in each bus connecting part in the bus section of the each panel and enabling each bus to be connected and disconnected; and a bus recovery member which is detachably connected between the connection members of faultless panels adjacent to a faulty panel when the faulty panel occurred.
    • 真空绝缘开关装置被设置为用于并联排列的另一个或其它变电站的面板。 真空绝缘开关装置包括具有开关部分的壳体,总线部分,电缆部分和控制部分,其分别由接地的金属板分隔。 真空绝缘开关装置包括:连接构件,设置在每个面板的总线部分中的每个总线连接部分中,并且使得每个总线能够被连接和断开; 以及总线恢复构件,当故障面板发生时,可拆卸地连接在与故障面板相邻的无故障面板的连接构件之间。
    • 5. 发明申请
    • VACUUM INSULATED SWITCHGEAR
    • 真空绝缘开关
    • US20110058311A1
    • 2011-03-10
    • US12853397
    • 2010-08-10
    • Shuichi KIKUKAWAKenji TSUCHIYAYuuko KAJIYAMADaisuke SUGAI
    • Shuichi KIKUKAWAKenji TSUCHIYAYuuko KAJIYAMADaisuke SUGAI
    • H02B1/20
    • H01H33/666H01H33/6606H02B13/0354
    • The vacuum insulated switchgear includes a housing enclosing a control compartment, a switch compartment, and a busbar compartment, each of the three compartments being partitioned by a metallic earthing plate; a first busbar and second busbar extended from an adjacent panel, in the busbar compartment; and a first busbar-connecting bushing and second busbar-connecting bushing making the first and second busbars connectible/disconnectible; a double-breaking three position vacuum switch, two sets of earthing switches, the first busbar-connecting bushing, and the second busbar-connecting bushing being integrally molded to form a switch provided on an electrical phase-by phase basis independently, wherein the switches for three phases are arranged in order side by side in the housing.
    • 真空绝缘开关装置包括一个封闭控制室,开关室和母线室的壳体,三个隔室中的每一个都由金属接地板隔开; 在母线槽中从相邻面板延伸的第一母线和第二母线; 以及第一母线连接衬套和第二母线连接衬套,其使得所述第一和第二母线可连接/可分离; 双重三位置真空开关,两组接地开关,第一母线连接衬套和第二母线连接套管,其一体地模制成形成独立设置在电相位基础上的开关,其中开关 三相依次排列在壳体内。
    • 7. 发明申请
    • RESIN-MOLDED VACUUM VALVE
    • 树脂真空阀
    • US20100314357A1
    • 2010-12-16
    • US12483639
    • 2009-06-12
    • Masato KOBAYASHIKenji TSUCHIYAKazunori OSAWAAkinori YOSHITANIYukihiro UOZUMI
    • Masato KOBAYASHIKenji TSUCHIYAKazunori OSAWAAkinori YOSHITANIYukihiro UOZUMI
    • H01H33/66
    • H01H33/66207H01H33/66261H01H2033/6623H01H2033/66284
    • A resin-molded vacuum valve has an internally hermetically sealed vacuum vessel, a fixed axis having a fixed electrode at one end thereof, and a movable axis having a movable electrode at one end thereof and facing the fixed axis in the vacuum vessel. The fixed and movable electrodes are fixedly and movably attached, respectively, to respective ends of the vacuum vessel with a contact therebetween. Further, a conductor connected to the fixed axis extends from a pull-out opening. First, second, and third electric field concentration alleviating shields are disposed near the fixed axis, near the movable axis, and near the pull-out opening, respectively. Buffer layers cover the outer peripheries of the vacuum valve and the conductor, and a resin insulator allows the movable axis to be movable, and buries and fixes the fixed axis, the vacuum vessel, the conductor, the buffer layers, and the electric field concentration alleviating shields.
    • 树脂模制的真空阀具有内部密封的真空容器,固定轴在其一端具有固定电极,并且可动轴在其一端具有可动电极并且在真空容器中面向固定轴。 固定和可移动电极分别固定并可移动地连接到真空容器的相应端部处,其间具有接触。 此外,连接到固定轴的导体从拉出开口延伸。 第一,第二和第三电场浓度减轻屏蔽分别设置在固定轴附近,靠近可移动轴线和靠近拉出开口处。 缓冲层覆盖真空阀和导体的外周,树脂绝缘体允许可移动轴可移动,并固定固定轴,真空容器,导体,缓冲层和电场浓度 减轻盾牌
    • 9. 发明申请
    • NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    • 非易失性半导体存储器件
    • US20100322008A1
    • 2010-12-23
    • US12814840
    • 2010-06-14
    • Kazuhide YONEYAKenji TSUCHIYA
    • Kazuhide YONEYAKenji TSUCHIYA
    • G11C16/04G11C11/00G11C7/00
    • G11C13/0069G11C11/005G11C13/0059G11C17/16G11C17/165G11C2213/72
    • According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array including regular memory cells and permanent memory cells and a control circuit. The regular memory cells are capable of switching between a first data storage state and a second data storage state. The permanent memory cells are fixed in a third data storage state that is read as the same logic level data as the first storage state. Data is stored in at least one of the regular memory cells and at least one of the permanent memory cells. The control circuit rewrites at least one of the regular memory cells from the second data storage state to the first data storage state at the time of data holding. The control circuit performs a reading operation after rewriting the regular memory cells from the first data storage state to the second data storage state.
    • 根据一个实施例,非易失性半导体存储器件包括包括常规存储单元和永久存储单元的存储单元阵列和控制电路。 常规存储单元能够在第一数据存储状态和第二数据存储状态之间切换。 永久存储单元被固定在与第一存储状态相同的逻辑电平数据中读取的第三数据存储状态。 数据存储在常规存储器单元和至少一个永久存储单元中的至少一个中。 控制电路在数据保持时将至少一个常规存储单元从第二数据存储状态重写到第一数据存储状态。 控制电路在将常规存储单元从第一数据存储状态重写为第二数据存储状态之后执行读取操作。