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1. 发明申请

US20130009288A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130009288A1
公开(公告)日：2013-01-10
申请号：US13177573
申请日：2011-07-07
申请人： Shu-Hui Hu , Shih-Feng Su , Hui-Shen Shih , Chih-Chien Liu , Po-Chun Chen , Ya-Jyuan Hung , Bin-Siang Tsai , Chin-Fu Lin
发明人： Shu-Hui Hu , Shih-Feng Su , Hui-Shen Shih , Chih-Chien Liu , Po-Chun Chen , Ya-Jyuan Hung , Bin-Siang Tsai , Chin-Fu Lin
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L21/76801
摘要： A method for fabricating a semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer comprises metal interconnects therein; forming a top metal layer on the dielectric layer; and forming a passivation layer on the top metal layer through high-density plasma chemical vapor deposition (HDPCVD) process.
摘要翻译：公开了一种制造半导体器件的方法。该方法包括以下步骤：提供衬底; 在所述衬底上形成电介质层，其中所述电介质层包括金属互连; 在所述电介质层上形成顶部金属层; 并通过高密度等离子体化学气相沉积（HDPCVD）工艺在顶层金属层上形成钝化层。

2. 发明授权

US08431473B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08431473B2
公开(公告)日：2013-04-30
申请号：US13177573
申请日：2011-07-07
申请人： Shu-Hui Hu , Shih-Feng Su , Hui-Shen Shih , Chih-Chien Liu , Po-Chun Chen , Ya-Jyuan Hung , Bin-Siang Tsai , Chin-Fu Lin
发明人： Shu-Hui Hu , Shih-Feng Su , Hui-Shen Shih , Chih-Chien Liu , Po-Chun Chen , Ya-Jyuan Hung , Bin-Siang Tsai , Chin-Fu Lin
IPC分类号： H00L21/28
CPC分类号： H01L21/76801
摘要： A method for fabricating a semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer comprises metal interconnects therein; forming a top metal layer on the dielectric layer; and forming a passivation layer on the top metal layer through high-density plasma chemical vapor deposition (HDPCVD) process.
摘要翻译：公开了一种制造半导体器件的方法。该方法包括以下步骤：提供衬底; 在所述衬底上形成电介质层，其中所述电介质层包括金属互连; 在所述电介质层上形成顶部金属层; 并通过高密度等离子体化学气相沉积（HDPCVD）工艺在顶层金属层上形成钝化层。

3. 发明申请

US20090035915A1 METHOD OF HIGH DENSITY PLASMA GAP-FILLING WITH MINIMIZATION OF GAS PHASE NUCLEATION 有权
标题翻译：高密度等离子体气相填充方法，最小化气相
公开(公告)号：US20090035915A1
公开(公告)日：2009-02-05
申请号：US11832166
申请日：2007-08-01
申请人： Shih-Feng Su
发明人： Shih-Feng Su
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method of high density plasma (HDP) gap-filling with a minimization of gas phase nucleation (GPN) is provided. The method includes providing a substrate having a trench in a reaction chamber. Next, a first deposition step is performed to partially fill a dielectric material in the trench. Then, an etch step is performed to partially remove the dielectric material in the trench. Thereafter, a second deposition step is performed to partially fill the dielectric material in the trench. A reaction gas used in the second deposition step includes a carrier gas, an oxygen-containing gas, a silicon-containing gas, and a hydrogen-containing gas. After the carrier gas and oxygen-containing gas are introduced into the reaction chamber and a radio frequency (RF) power is turned on for a period of time, the silicon-containing gas and hydrogen-containing gas are introduced into the reaction chamber.
摘要翻译：提供了一种使气相成核（GPN）最小化的高密度等离子体（HDP）间隙填充方法。该方法包括提供在反应室中具有沟槽的衬底。接下来，执行第一沉积步骤以部分地填充沟槽中的电介质材料。然后，执行蚀刻步骤以部分去除沟槽中的电介质材料。此后，执行第二沉积步骤以部分地填充沟槽中的电介质材料。在第二沉积步骤中使用的反应气体包括载气，含氧气体，含硅气体和含氢气体。在将载气和含氧气体引入反应室中并且射频（RF）功率接通一段时间之后，将含硅气体和含氢气体引入反应室。

4. 发明申请

US20080026579A1 COPPER DAMASCENE PROCESS 审中-公开
标题翻译：铜加工工艺
公开(公告)号：US20080026579A1
公开(公告)日：2008-01-31
申请号：US11459931
申请日：2006-07-25
申请人： Kuo-Chih Lai , Mei-Ling Chen , Jei-Ming Chen , Hsin-Hsing Chen , Shih-Feng Su , Meng-Chi Chen
发明人： Kuo-Chih Lai , Mei-Ling Chen , Jei-Ming Chen , Hsin-Hsing Chen , Shih-Feng Su , Meng-Chi Chen
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/02074 , H01L21/76883
摘要： A copper damascene process includes providing a substrate having a dielectric layer thereon, forming at least a copper damascene structure in the dielectric layer, performing a heat treatment on the substrate, and performing a reduction plasma treatment on a surface of the copper damascene structure. The impurities formed in the copper damascene process are removed by the heat treatment, therefore the copper damascene structure is completely reduced by the reduction plasma treatment and is improved.
摘要翻译：铜镶嵌工艺包括提供其上具有介电层的基板，在介电层中至少形成铜镶嵌结构，对基板进行热处理，并对铜镶嵌结构的表面进行还原等离子体处理。通过热处理除去在铜镶嵌工艺中形成的杂质，因此通过还原等离子体处理完全减少铜镶嵌结构并改善。

5. 发明授权

US07763522B2 Method of high density plasma gap-filling with minimization of gas phase nucleation 有权
标题翻译：高密度等离子体填充填充气相成核方法
公开(公告)号：US07763522B2
公开(公告)日：2010-07-27
申请号：US11832166
申请日：2007-08-01
申请人： Shih-Feng Su
发明人： Shih-Feng Su
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method of high density plasma (HDP) gap-filling with a minimization of gas phase nucleation (GPN) is provided. The method includes providing a substrate having a trench in a reaction chamber. Next, a first deposition step is performed to partially fill a dielectric material in the trench. Then, an etch step is performed to partially remove the dielectric material in the trench. Thereafter, a second deposition step is performed to partially fill the dielectric material in the trench. A reaction gas used in the second deposition step includes a carrier gas, an oxygen-containing gas, a silicon-containing gas, and a hydrogen-containing gas. After the carrier gas and oxygen-containing gas are introduced into the reaction chamber and a radio frequency (RF) power is turned on for a period of time, the silicon-containing gas and hydrogen-containing gas are introduced into the reaction chamber.
摘要翻译：提供了一种使气相成核（GPN）最小化的高密度等离子体（HDP）间隙填充方法。该方法包括提供在反应室中具有沟槽的衬底。接下来，执行第一沉积步骤以部分地填充沟槽中的电介质材料。然后，执行蚀刻步骤以部分去除沟槽中的电介质材料。此后，执行第二沉积步骤以部分地填充沟槽中的电介质材料。在第二沉积步骤中使用的反应气体包括载气，含氧气体，含硅气体和含氢气体。在将载气和含氧气体引入反应室中并且射频（RF）功率接通一段时间之后，将含硅气体和含氢气体引入反应室。

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