专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06918413B2 Warp backed weave denim 失效
标题翻译：经编背编织牛仔布
公开(公告)号：US06918413B2
公开(公告)日：2005-07-19
申请号：US10259472
申请日：2002-09-30
申请人： Shu Ono , Toshinari Nagura , Masami Seki
发明人： Shu Ono , Toshinari Nagura , Masami Seki
IPC分类号： D03D11/00 , D03D15/00 , D03D15/08 , D21F1/00
CPC分类号： D03D15/00 , D03D15/0027 , D03D15/0033 , D03D15/08 , D10B2201/02 , D10B2201/24 , D10B2331/04 , D10B2331/10 , D10B2401/061 , D10B2401/063 , D10B2401/14 , Y10T442/3268
摘要： A warp backed weave denim with excellent stretchability. A warp backed weave denim having a stretchable structure of twill weave or satin weave, comprising warps doubled to be exposed on front and back surfaces of a weft yarn, and the weft yearn is made of polyurethane fiber filament core spun yarn.
摘要翻译：经向支撑的编织牛仔布具有优异的拉伸性。具有斜纹织造或缎纹编织的可拉伸结构的经向背面编织的牛仔布，包括经纬纱加倍翻转以在纬纱的前后表面露出，纬纱由聚氨酯纤维长丝芯纱制成。

2. 发明授权

US06204912B1 Exposure method, exposure apparatus, and mask 失效
标题翻译：曝光方法，曝光装置和面罩
公开(公告)号：US06204912B1
公开(公告)日：2001-03-20
申请号：US08848394
申请日：1997-05-08
申请人： Makoto Tsuchiya , Kei Nara , Nobutaka Fujimori , Manabu Toguchi , Masami Seki
发明人： Makoto Tsuchiya , Kei Nara , Nobutaka Fujimori , Manabu Toguchi , Masami Seki
IPC分类号： G03B2742
CPC分类号： G03F7/70066 , G03F7/70275 , G03F7/70283 , G03F7/70358 , G03F7/70475 , G03F7/70791
摘要： An exposure method, exposure apparatus and mask are suitable for manufacturing an active matrix liquid crystal display including, for example, a gate electrode layer and a source/drain electrode layer. A stitching portion between unit patterns in a second layer is offset from the stitching portion in a first layer by a predetermined distance. The stitching portions of the second layer are always positioned over unit patterns of the first layer. Accordingly, the contrast gap that occurs at the stitching portion as a boundary is defined only by an error in the exposure position of the second layer. The contrast gap is not affected by an error in the exposure position of the first layer, unlike the conventional method. Because the contrast gap caused by the error in the exposure position of the first layer is eliminated, the total contrast gap that occurs at the stitching portion as a boundary is significantly reduced.
摘要翻译：曝光方法，曝光装置和掩模适用于制造包括例如栅极电极层和源极/漏极电极层的有源矩阵液晶显示器。第二层中的单元图案之间的缝合部分在第一层中与缝合部分偏移预定距离。第二层的缝合部分总是位于第一层的单位图案之上。因此，在作为边界的缝合部分发生的对比度间隙仅由第二层的曝光位置的误差限定。与传统方法不同，对比度间隙不受第一层的曝光位置的误差的影响。由于消除了由第一层的曝光位置的误差引起的对比度间隙，所以在作为边界的缝合部分发生的总对比度间隙显着减小。

3. 发明授权

US5625436A Scanning type exposure apparatus and exposure method 失效
标题翻译：扫描式曝光装置和曝光方法
公开(公告)号：US5625436A
公开(公告)日：1997-04-29
申请号：US689691
申请日：1996-08-13
申请人： Masamitsu Yanagihara , Susumu Mori , Tsuyoshi Naraki , Masami Seki , Seiji Miyazaki , Tsuyoshi Narabe , Hiroshi Chiba
发明人： Masamitsu Yanagihara , Susumu Mori , Tsuyoshi Naraki , Masami Seki , Seiji Miyazaki , Tsuyoshi Narabe , Hiroshi Chiba
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F7/70275 , G03F7/70241 , G03F7/70258 , G03F7/70358 , G03F7/70858 , G03F7/70883 , G03F9/70
摘要： In a scanning type exposure apparatus for exposing an entire surface of a pattern region on a mask to a substrate by scanning the mask and the substrate with respect to a projection optical system in a predetermined direction with a speed ratio in accordance with a magnification of the projection optical system, there are provided a plurality of illumination optical systems for illuminating respective areas of the pattern region on the mask with respective light fluxes from respective light source; a plurality of projection optical systems arranged so as to correspond to the respective illumination optical systems, the projection optical systems projecting respective images of the areas illuminated by the respective illumination optical systems onto respective projection areas on the substrate; a memory device for obtaining and storing a change of shape of the substrate; a magnification changing device for changing a magnification of at least one of the projection optical systems in accordance with the change of shape of the substrate; and an imaging position changing device for changing the position of said image projected via the at least one projection optical systems in accordance with the change in magnification.
摘要翻译：在扫描型曝光装置中，通过以与所述掩模和所述基板相对于所述投影光学系统的倍率相对于投影光学系统沿预定方向扫描所述掩模上的图案区域的整个表面，提供了多个照明光学系统，用于利用来自各个光源的各个光束照射掩模上的图案区域的各个区域; 多个投影光学系统被布置为对应于各个照明光学系统，所述投影光学系统将由各个照明光学系统照射的区域的各个图像投射到所述基板上的相应的投影区域上; 用于获取和存储基板的形状变化的存储装置; 放大率改变装置，用于根据基板的形状变化来改变至少一个投影光学系统的放大率; 以及成像位置改变装置，用于根据放大率的变化改变经由至少一个投影光学系统投影的所述图像的位置。

4. 发明授权

US5602620A Scanning exposure apparatus and exposure method 失效
标题翻译：扫描曝光装置和曝光方法
公开(公告)号：US5602620A
公开(公告)日：1997-02-11
申请号：US490212
申请日：1995-06-14
申请人： Seiji Miyazaki , Kei Nara , Masami Seki , Masamitsu Yanagihara
发明人： Seiji Miyazaki , Kei Nara , Masami Seki , Masamitsu Yanagihara
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027 , G03B27/42 , G01B11/00
CPC分类号： G03F9/7003 , G03F7/70275 , G03F7/70358 , G03F7/70475 , G03F7/70791 , G03F9/70
摘要： The present invention is directed to scanning exposure apparatus and exposure method to achieve simultaneous projection of images of plural regions on a mask onto a photosensitive substrate with correcting an orthogonality error of a pattern on the mask or photosensitive substrate. If the pattern on the mask or photosensitive substrate has an orthogonality error causing a deviation of a certain angle in a first direction perpendicular to a scanning direction as it goes in the scanning direction, the mask and the photosensitive substrate are rotated relative to each other in the plane thereof to align one coordinate axis in a coordinate system of each pattern with the first direction. Then a relative displacement is given by an amount of the orthogonality error between positions of images projected through a first optical system and positions of images projected through a second optical system, and relative positions of the mask and the photosensitive substrate are continuously changed by the amount of the orthogonality error in the first direction in accordance with the position of the mask or photosensitive substrate in the scanning direction.
摘要翻译：本发明涉及扫描曝光装置和曝光方法，以通过校正掩模或感光基底上的图案的正交性误差来将掩模上的多个区域的图像同时投影到感光基板上。如果掩模或感光基板上的图案具有在沿着扫描方向进入垂直于扫描方向的第一方向上产生一定角度的偏差的正交性误差，则掩模和感光基板相对于彼此旋转其平面将每个图案的坐标系中的一个坐标轴与第一方向对齐。然后通过第一光学系统投影的图像的位置和通过第二光学系统投影的图像的位置之间的正交性误差的量给出相对位移，并且掩模和感光基板的相对位置连续地改变量根据掩模或感光基板在扫描方向上的位置，在第一方向上的正交性误差。

5. 发明授权

US5959784A Optical projection systems and projection-exposure apparatus comprising same 失效
标题翻译：光投射系统和投影曝光装置
公开(公告)号：US5959784A
公开(公告)日：1999-09-28
申请号：US850733
申请日：1997-04-24
申请人： Masami Seki , Hiroshi Chiba
发明人： Masami Seki , Hiroshi Chiba
IPC分类号： G02B17/08 , G03F7/20 , G03F7/207 , H01L21/027 , G02B13/22 , G02B17/00
CPC分类号： G02B17/0892 , G02B17/002 , G02B17/008 , G02B17/08 , G03F7/70225 , G03F7/70258 , G03F7/70275 , G03F7/70358
摘要： The invention pertains to optical projection-exposure apparatus for photolithography that can focus a pattern defined by a mask onto a non-flat substrate. In one embodiment, piezoelectric elements are used as an actuator for adjusting the optical path length between the mask and the substrate. A first reflector reflects a light flux transmitted by the mask. A telecentric optical system then forms an image of the mask in a focal plane. A second reflector reflects the light flux from the telecentric perpendicularly onto the substrate. The actuator moves the first or second reflectors, changing the optical path length of the light flux. A focus sensor detects the height of the sensitized surface of the substrate in a direction perpendicular to the sensitized surface of the substrate and thereby provides a focus signal to the actuator. The actuator then moves the focal plane to the sensitized surface.
摘要翻译：本发明涉及用于光刻的光学投影曝光装置，其可以将由掩模限定的图案聚焦到非平坦基板上。在一个实施例中，压电元件用作用于调节掩模和基板之间的光程长度的致动器。第一反射器反射由掩模传输的光束。然后，远心光学系统在焦平面中形成掩模的图像。第二反射器将来自远心的光通量垂直地反射到基板上。致动器移动第一或第二反射器，改变光通量的光程长度。焦点传感器在与基板的敏化表面垂直的方向上检测基板的敏化表面的高度，从而向致动器提供聚焦信号。然后，致动器将焦平面移动到致敏表面。

6. 发明授权

US5614988A Projection exposure apparatus and method with a plurality of projection optical units 失效
标题翻译：具有多个投影光学单元的投影曝光装置和方法
公开(公告)号：US5614988A
公开(公告)日：1997-03-25
申请号：US349754
申请日：1994-12-05
申请人： Kinya Kato , Masami Seki
发明人： Kinya Kato , Masami Seki
IPC分类号： G03F7/20 , G03B27/44 , G03B27/32
CPC分类号： G03F7/70241 , G03F7/70275 , G03F7/70358 , G03F7/70791
摘要： A projection exposure apparatus and method having a projection optical system with a plurality of projection optical units and being excellent in matching between images formed through the respective projection optical units. First and second substrates are moved relatively to a projection optical system to project a pattern formed on the first substrate through the projection optical system onto the second substrate to effect exposure thereon. The projection optical system is provided with a plurality of projection optical units each forming a real-size erect image of the pattern formed on the first substrate on the second substrate. Each of the projection optical units has a plurality of reflective surfaces and is telecentric at least on an image side. The projection exposure apparatus also has a correcting mechanism disposed to correct an error of orientation between a plurality of images formed on the second substrate by the plurality of projection optical units.
摘要翻译：一种投影曝光装置和方法，具有具有多个投影光学单元的投影光学系统，并且通过各个投影光学单元形成的图像之间的匹配性优异。第一和第二基板相对于投影光学系统移动，以通过投影光学系统将形成在第一基板上的图案投影到第二基板上，以在其上进行曝光。投影光学系统设置有多个投影光学单元，每个投影光学单元形成形成在第二基板上的第一基板上的图案的实际直立图像。每个投影光学单元具有多个反射表面，并且至少在像侧上是远心的。投影曝光装置还具有校正机构，用于校正由多个投影光学单元在形成在第二基板上的多个图像之间的取向误差。

7. 再颁专利

USRE37762E1 Scanning exposure apparatus and exposure method 有权
标题翻译：扫描曝光装置和曝光方法
公开(公告)号：USRE37762E1
公开(公告)日：2002-06-25
申请号：US09247857
申请日：1999-02-11
申请人： Seiji Miyazaki , Kei Nara , Masami Seki , Masamitsu Yanagihara , Tomohide Hamada
发明人： Seiji Miyazaki , Kei Nara , Masami Seki , Masamitsu Yanagihara , Tomohide Hamada
IPC分类号： G03B2742
CPC分类号： G03F9/7003 , G03F7/70275 , G03F7/70358 , G03F7/70475 , G03F7/70791
摘要： The present invention is directed to scanning exposure apparatus and exposure method to achieve simultaneous projection of images of plural regions on a mask onto a photosensitive substrate with correcting an orthogonality error of a pattern on the mask or photosensitive substrate. If the pattern on the mask or photosensitive substrate has an orthogonality error causing a deviation of a certain angle in a first direction perpendicular to a scanning direction as it goes in the scanning direction, the mask and the photosensitive substrate are rotated relative to each other in the plane thereof to align one coordinate axis in a coordinate system of each pattern with the first direction. Then a relative displacement is given by an amount of the orthogonality error between positions of images projected through a first optical system and positions of images projected through a second optical system, and relative positions of the mask and the photosensitive substrate are continuously changed by the amount of the orthogonality error in the first direction in accordance with the position of the mask or photosensitive substrate in the scanning direction.
摘要翻译：本发明涉及扫描曝光装置和曝光方法，以通过校正掩模或感光基底上的图案的正交性误差来将掩模上的多个区域的图像同时投影到感光基板上。如果掩模或感光基板上的图案具有在沿着扫描方向进入垂直于扫描方向的第一方向上产生一定角度的偏差的正交性误差，则掩模和感光基板相对于彼此旋转其平面将每个图案的坐标系中的一个坐标轴与第一方向对齐。然后通过第一光学系统投影的图像的位置和通过第二光学系统投影的图像的位置之间的正交性误差的量给出相对位移，并且掩模和感光基板的相对位置连续地改变量根据掩模或感光基板在扫描方向上的位置，在第一方向上的正交性误差。

8. 再颁专利

USRE37361E1 Scanning type exposure apparatus and exposure method 有权
公开(公告)号：USRE37361E1
公开(公告)日：2001-09-11
申请号：US09300376
申请日：1999-04-27
申请人： Masamitsu Yanagihara , Susumu Mori , Tsuyoshi Naraki , Masami Seki , Seiji Miyazaki , Tsuyohsi Narabe , Hiroshi Chiba
发明人： Masamitsu Yanagihara , Susumu Mori , Tsuyoshi Naraki , Masami Seki , Seiji Miyazaki , Tsuyohsi Narabe , Hiroshi Chiba
IPC分类号： H01L21027
CPC分类号： G03F7/70275 , G03F7/70241 , G03F7/70258 , G03F7/70358 , G03F7/70858 , G03F7/70883 , G03F9/70
摘要： In a scanning type exposure apparatus for exposing an entire surface of a pattern region on a mask to a substrate by scanning the mask and the substrate with respect to a projection optical system in a predetermined direction with a speed ratio in accordance with a magnification of the projection optical system, there are provided a plurality of illumination optical systems for illuminating respective areas of the pattern region on the mask with respective light fluxes from respective light source; a plurality of projection optical systems arranged so as to correspond to the respective illumination optical systems, the projection optical systems projecting respective images of the areas illuminated by the respective illumination optical systems onto respective projection areas on the substrate; a memory device for obtaining and storing a change of shape of the substrate; a magnification changing device for changing a magnification of at least one of the projection optical systems in accordance with the change of shape of the substrate; and an imaging position changing device for changing the position of said image projected via the at least one projection optical systems in accordance with the change in magnification. An exposure apparatus for exposing a pattern of a mask onto a substrate includes an image transfer system, an imaging characteristic adjusting mechanism and an exposure system. The image transfer system projects the pattern of the mask onto the substrate while moving the mask and the substrate synchronously during the projection of the pattern onto the substrate such that portions of the pattern overlap each other. The imaging characteristic adjusting mechanism is disposed in a space between the mask and the substrate, and adjusts imaging characteristics of a portion of the image transfer system that projects the pattern onto the substrate. The exposure system exposes the pattern during the synchronous movement of the mask and the substrate by the image transfer system.

9. 发明授权

US5640227A Exposure apparatus and exposure method for minimizing defocusing of the transferred pattern 失效
标题翻译：用于最小化转印图案的散焦的曝光装置和曝光方法
公开(公告)号：US5640227A
公开(公告)日：1997-06-17
申请号：US349869
申请日：1994-12-06
申请人： Kinya Kato , Kazuaki Saiki , Masami Seki , Masaki Kato
发明人： Kinya Kato , Kazuaki Saiki , Masami Seki , Masaki Kato
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F9/7026 , G03F7/70358
摘要： An exposure apparatus and an exposure method which minimize defocusing of the transferred pattern even with a large-sized mask. When the exposure apparatus is used which transfers the pattern formed on a first substrate through a substantially real-size projection optical system onto a second substrate, the positions of the mask and the substrate are detected, and based on the information on the positions the distance between the mask and the substrate is controlled to be substantially constant. According to the present invention, defocusing of the transferred pattern may be substantially avoided by detecting positions of the mask and the plate by making use of, e.g., an obliquely incident light focus detection optical system, and controlling the distance therebetween to be held constant or at a predetermined distance.
摘要翻译：曝光装置和曝光方法，即使用大尺寸的掩模，也能最小化转印图案的散焦。当使用通过基本上实际尺寸的投影光学系统将形成在第一基板上的图案转印到第二基板上的曝光装置时，检测掩模和基板的位置，并且基于关于位置的信息，距离掩模和基板之间的距离被控制为基本恒定。根据本发明，通过利用例如倾斜入射的光聚焦检测光学系统来检测掩模和板的位置，并且控制其之间的距离保持不变，可以基本上避免转印图案的散焦在预定距离处。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式