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2. 发明授权

US08203208B2 Three-dimensional stacked substrate arrangements 有权
标题翻译：三维堆叠衬底布置
公开(公告)号：US08203208B2
公开(公告)日：2012-06-19
申请号：US13103267
申请日：2011-05-09
申请人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
发明人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要： Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
摘要翻译：具有可靠接合和衬底保护的三维堆叠衬底布置。

3. 发明授权

US07973407B2 Three-dimensional stacked substrate arrangements 有权
标题翻译：三维堆叠衬底布置
公开(公告)号：US07973407B2
公开(公告)日：2011-07-05
申请号：US12319035
申请日：2008-12-31
申请人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
发明人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要： Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
摘要翻译：具有可靠接合和衬底保护的三维堆叠衬底布置。

4. 发明申请

US20120280387A1 THREE-DIMENSIONAL STACKED SUBSTRATE ARRANGEMENTS 有权
标题翻译：三维堆叠基板安装
公开(公告)号：US20120280387A1
公开(公告)日：2012-11-08
申请号：US13470822
申请日：2012-05-14
申请人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
发明人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
IPC分类号： H01L23/498
CPC分类号： H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要： Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
摘要翻译：具有可靠接合和衬底保护的三维堆叠衬底布置。

5. 发明申请

US20110260319A1 THREE-DIMENSIONAL STACKED SUBSTRATE ARRANGEMENTS 有权
标题翻译：三维堆叠基板安装
公开(公告)号：US20110260319A1
公开(公告)日：2011-10-27
申请号：US13103267
申请日：2011-05-09
申请人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
发明人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
IPC分类号： H01L23/498
CPC分类号： H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要： Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
摘要翻译：具有可靠接合和衬底保护的三维堆叠衬底布置。

6. 发明申请

US20090174070A1 Three-dimensional stacked substrate arrangements 有权
标题翻译：三维堆叠衬底布置
公开(公告)号：US20090174070A1
公开(公告)日：2009-07-09
申请号：US12319035
申请日：2008-12-31
申请人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobnnsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
发明人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobnnsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
IPC分类号： H01L23/498
CPC分类号： H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要： Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
摘要翻译：具有可靠接合和衬底保护的三维堆叠衬底布置。

7. 发明申请

US20050003650A1 Three-dimensional stacked substrate arrangements 审中-公开
标题翻译：三维堆叠衬底布置
公开(公告)号：US20050003650A1
公开(公告)日：2005-01-06
申请号：US10610743
申请日：2003-07-02
申请人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Chan , Mauro Kobrinsky , Sarah Kim , Kevin O'Brien , Michael Harmes , Thomas Marieb
发明人： Shriram Ramanathan , Patrick Morrow , Scott List , Michael Chan , Mauro Kobrinsky , Sarah Kim , Kevin O'Brien , Michael Harmes , Thomas Marieb
IPC分类号： H01L21/60 , H01L21/98 , H01L25/065 , H01L21/44 , H01L21/48 , H01L23/02 , H01L23/48 , H01L23/52
CPC分类号： H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要： Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
摘要翻译：具有可靠接合和衬底保护的三维堆叠衬底布置。

8. 发明授权

US06646340B2 Thermally coupling electrically decoupling cooling device for integrated circuits 有权
标题翻译：用于集成电路的热耦合电去耦冷却装置
公开(公告)号：US06646340B2
公开(公告)日：2003-11-11
申请号：US10339134
申请日：2003-01-08
申请人： Timothy L. Deeter , Thomas Marieb , Daniel Murray , Daniel Pantuso , Sarangapani Sista
发明人： Timothy L. Deeter , Thomas Marieb , Daniel Murray , Daniel Pantuso , Sarangapani Sista
IPC分类号： H01L2334
CPC分类号： H01L23/3735 , H01L23/367 , H01L2924/0002 , H01L2924/00
摘要： A thermally coupling electrically decoupling cooling device is described. The cooling device may be thermally disposed between a self-heating electrically conductive line and a semiconductor substrate to cool the line by transferring heat from the line to the substrate while blocking flow of current from the line to the substrate. The cooling device may contain a thermally conductive structure, such as a stack of vias and lines, to conduct heat away from the electrically conductive line, and a current blocking structure, such as a reverse biased diode or a capacitor, to block current flow into the substrate. Specific current blocking structures include a reverse biased diode containing an n-doped region and a p-doped region disposed between the thermally conductive structure and the substrate, and a capacitor containing a dielectric layer disposed between the thermally conductive structure and the semiconductor substrate.
摘要翻译：描述了热耦合电去耦冷却装置。冷却装置可以热设置在自加热导电线路和半导体衬底之间，以通过将热量从线路传导到衬底来冷却线路，同时阻挡电流从衬底到衬底的流动。冷却装置可以包含导热结构，例如通孔和管线的堆叠，以将热量从导电线路传导出来，以及电流阻塞结构，例如反向偏置二极管或电容器，以阻止电流流入底物。比电流阻挡结构包括含有n掺杂区域和布置在导热结构和衬底之间的p掺杂区域的反向偏置二极管，以及包含布置在导热结构和半导体衬底之间的电介质层的电容器。

9. 发明授权

US06794755B2 Surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvement 有权
标题翻译：用于电迁移和粘附改善的集成电路中金属互连的表面改变
公开(公告)号：US06794755B2
公开(公告)日：2004-09-21
申请号：US10400128
申请日：2003-03-25
申请人： Jose A. Maiz , Xiaorong Morrow , Thomas Marieb , Carolyn Block , Jihperng Leu , Paul McGregor , Markus Kuhn , Mitchell C. Taylor
发明人： Jose A. Maiz , Xiaorong Morrow , Thomas Marieb , Carolyn Block , Jihperng Leu , Paul McGregor , Markus Kuhn , Mitchell C. Taylor
IPC分类号： H01L2348
CPC分类号： H01L21/76846 , H01L21/32051 , H01L21/76801 , H01L21/76805 , H01L21/76807 , H01L21/76822 , H01L21/76825 , H01L21/76834 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76864 , H01L21/76867 , H01L21/76886 , H01L21/76888 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Described is a method and apparatus for altering the top surface of a metal interconnect. In one embodiment of the invention, a metal interconnect and a barrier layer are formed into an interlayer dielectric (ILD) and the metal interconnect and the barrier layer are planarized to the top of the ILD. The top surfaces of the metal interconnect, the barrier layer, and the ILD are altered with a second metal to form an electromigration barrier. In one embodiment of the invention, the second metal is prevented from contaminating the electrical resistivity of the metal interconnect.
摘要翻译：描述了用于改变金属互连的顶表面的方法和装置。在本发明的一个实施例中，将金属互连和阻挡层形成为层间电介质（ILD），并将金属互连和阻挡层平面化到ILD的顶部。金属互连，阻挡层和ILD的顶表面用第二金属改变以形成电迁移屏障。在本发明的一个实施例中，防止了第二金属污染金属互连的电阻率。

10. 发明授权

US5909635A Cladding of an interconnect for improved electromigration performance 失效
标题翻译：互连的包层以提高电迁移性能
公开(公告)号：US5909635A
公开(公告)日：1999-06-01
申请号：US673277
申请日：1996-06-28
申请人： Thomas Marieb , Donald Gardner , Quat Vu
发明人： Thomas Marieb , Donald Gardner , Quat Vu
IPC分类号： H01L21/768 , H01L23/532 , H01L21/441
CPC分类号： H01L21/76886 , H01L21/7685 , H01L21/76852 , H01L21/76858 , H01L21/76885 , H01L23/53223 , H01L2924/0002
摘要： According to one embodiment, a method for encapsulating a conductive structure having a first layer, a second layer and a third layer, with a cladding layer, for improved electromigration performance is described. The method comprises the following steps: forming a fourth layer over the conductive structure and reacting at least a portion of the first layer, the third layer and the fourth layer with a portion of the second layer to form a cladding layer that encapsulates an unreacted portion of the second layer. In one embodiment of the present invention, the cladding layer is TiAl.sub.3.
摘要翻译：根据一个实施例，描述了一种用于封装具有包层的第一层，第二层和第三层的导电结构以提高电迁移性能的方法。该方法包括以下步骤：在导电结构上形成第四层，并使第一层，第三层和第四层的至少一部分与第二层的一部分反应，形成包覆未包含部分的第二层。在本发明的一个实施例中，包覆层是TiAl 3。

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