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1. 发明申请

US20090174003A1 DUAL WORK FUNCTION DEVICE WITH STRESSOR LAYER AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：具有压力层的双功能功能装置及其制造方法
公开(公告)号：US20090174003A1
公开(公告)日：2009-07-09
申请号：US12269754
申请日：2008-11-12
申请人： Shou-Zen Chang , Thomas Y. Hoffman , Geoffrey Pourtois , Hong Yu Yu
发明人： Shou-Zen Chang , Thomas Y. Hoffman , Geoffrey Pourtois , Hong Yu Yu
IPC分类号： H01L27/092 , H01L21/28
CPC分类号： H01L21/823842 , H01L21/82345 , H01L27/088 , H01L27/092 , H01L29/7845
摘要： A method for manufacturing a dual work function semiconductor device is disclosed. In one aspect, the method relates to providing a substrate with a first and a second region. A gate dielectric is formed overlying the first and the second region. A metal gate layer is formed overlying the gate dielectric on the first and the second region. The metal gate layer has a first (as-deposited) work function that can be modified upon inducing strain thereon. The method further relates to selecting a first strain which induces a first pre-determined work function shift (ΔWF1) in the first (as-deposited) work function of the metal gate layer on the first region and selectively forming a first strained conductive layer overlying the metal gate layer on the first region, the first strained conductive layer exerting the selected first strain on the metal gate layer.
摘要翻译：公开了一种用于制造双功能半导体器件的方法。在一个方面，该方法涉及提供具有第一和第二区域的基底。形成覆盖在第一和第二区域上的栅极电介质。在第一和第二区域上形成覆盖栅极电介质的金属栅极层。金属栅极层具有可以在其上施加应变时修饰的第一（沉积）功函数。该方法还涉及选择在第一区域上的金属栅极层的第一（沉积）功函数中引起第一预定功函数偏移（DeltaWF1）的第一应变，并选择性地形成覆盖第一应变导电层所述第一区域上的所述金属栅极层，所述第一应变导电层在所述金属栅极层上施加所选择的第一应变。

2. 发明申请

US20090206417A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090206417A1
公开(公告)日：2009-08-20
申请号：US12389315
申请日：2009-02-19
申请人： Shou-Zen Chang , HongYu Yu , Thomas Y. Hoffman
发明人： Shou-Zen Chang , HongYu Yu , Thomas Y. Hoffman
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823857 , H01L29/495 , H01L29/513 , H01L29/517
摘要： A method for manufacturing a dual work function semiconductor device is disclosed. In one aspect, a method starts by forming a host dielectric layer over a first and second region of a substrate. A first dielectric capping layer is formed overlying the host dielectric layer on the first and second region and later selectively removed to expose an underlying layer on the first region. A Hf-based dielectric capping layer is formed overlying the underlying layer on the first region and the first dielectric capping layer on the second region. The Hf-based dielectric capping layer is selected to have a healing effect on the exposed surface of the underlying layer on the first region. A control electrode is formed overlaying the Hf-based dielectric capping layer on the first region and on the second region.
摘要翻译：公开了一种用于制造双功能半导体器件的方法。在一个方面，一种方法通过在衬底的第一和第二区域上形成主电介质层开始。形成第一介电覆盖层，覆盖第一和第二区域上的主介电层，然后选择性地去除以暴露第一区域上的下层。形成Hf基电介质覆盖层，覆盖第一区域上的下层和第二区域上的第一介电覆盖层。选择Hf基介电覆盖层以对第一区域上的下层的暴露表面具有愈合效果。在第一区域和第二区域上形成覆盖Hf基电介质覆盖层的控制电极。

3. 发明授权

US08912055B2 Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby 有权
标题翻译：用于制造混合MOSFET器件的方法和由此可获得的混合MOSFET
公开(公告)号：US08912055B2
公开(公告)日：2014-12-16
申请号：US13462694
申请日：2012-05-02
申请人： Thomas Y. Hoffman , Matty Caymax , Niamh Waldron , Geert Hellings
发明人： Thomas Y. Hoffman , Matty Caymax , Niamh Waldron , Geert Hellings
IPC分类号： H01L21/00 , H01L29/66 , H01L29/78 , H01L21/28 , H01L29/10 , H01L21/8258
CPC分类号： H01L21/8258 , H01L21/28255 , H01L29/1054 , H01L29/66636 , H01L29/66651 , H01L29/78
摘要： Disclosed are methods for forming hybrid metal-oxide-semiconductor field effect transistors (MOSFETs) and the hybrid MOSFETS thus obtained. In one embodiment, a method is disclosed that includes providing a first substrate comprising a first region and a second region, providing a second substrate comprising a second semiconductor layer and an insulating layer overlaying the second semiconductor layer, and direct substrate bonding the second substrate to the first substrate, thereby contacting the first region and the second region with the insulating layer. The method further includes selectively removing the second semiconductor layer and the insulating layer in the first region, thereby exposing the first semiconductor layer in the first region, forming a first gate stack of a first MOSFET on the exposed first semiconductor layer in the first region, and forming a second gate stack of a second MOSFET on the second semiconductor layer in the second region.
摘要翻译：公开了形成混合金属氧化物半导体场效应晶体管（MOSFET）和由此获得的混合MOSFET的方法。在一个实施例中，公开了一种方法，其包括提供包括第一区域和第二区域的第一衬底，提供包括第二半导体层和覆盖第二半导体层的绝缘层的第二衬底，以及将第二衬底直接接合到第一基板，从而使第一区域和第二区域与绝缘层接触。该方法还包括选择性地去除第一区域中的第二半导体层和绝缘层，由此暴露第一区域中的第一半导体层，在第一区域中的暴露的第一半导体层上形成第一MOSFET的第一栅叠层，以及在所述第二区域中的所述第二半导体层上形成第二MOSFET的第二栅极叠层。

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