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    • 2. 发明申请
    • Light emitting semiconductor device
    • 发光半导体器件
    • US20100052006A1
    • 2010-03-04
    • US12585058
    • 2009-09-02
    • Shigeo TakedaHiroyuki TajimaShota ShimonishiYosuke Tsuchiya
    • Shigeo TakedaHiroyuki TajimaShota ShimonishiYosuke Tsuchiya
    • H01L33/00
    • H01L33/508H01L33/507H01L33/54H01L2924/0002H01L2924/00
    • A light emitting semiconductor device includes a base substrate; a light emitting semiconductor element including a crystal growth basis and provided on the base substrate so that the crystal growth basis faces in opposite direction to the base substrate; a first transparent sealing medium which seals the light emitting semiconductor on the base substrate; and a second transparent sealing medium which seals the light emitting semiconductor over the first transparent sealing medium and contains phosphor. A thickness of the second sealing medium in a portion with high emission intensity is larger than that of the other portion of the first sealing medium; and the portion with high emission intensity is defined as a portion where light emission intensity from the light emitting semiconductor element is maximum.
    • 发光半导体器件包括:基底; 包括晶体生长基础的发光半导体元件,并且设置在所述基底基板上,使得所述晶体生长基底面向与所述基底基板相反的方向; 密封基底基板上的发光半导体的第一透明密封介质; 以及第二透明密封介质,其密封所述第一透明密封介质上的所述发光半导体并且包含磷光体。 发光强度高的部分的第二密封介质的厚度大于第一密封介质的其他部分的厚度; 并且具有高发光强度的部分被定义为来自发光半导体元件的发光强度最大的部分。
    • 3. 发明授权
    • Light emitting semiconductor device
    • 发光半导体器件
    • US08232578B2
    • 2012-07-31
    • US12585058
    • 2009-09-02
    • Shigeo TakedaHiroyuki TajimaShota ShimonishiYosuke Tsuchiya
    • Shigeo TakedaHiroyuki TajimaShota ShimonishiYosuke Tsuchiya
    • H01L33/00
    • H01L33/508H01L33/507H01L33/54H01L2924/0002H01L2924/00
    • A light emitting semiconductor device includes a base substrate; a light emitting semiconductor element including a crystal growth basis and provided on the base substrate so that the crystal growth basis faces in opposite direction to the base substrate; a first transparent sealing medium which seals the light emitting semiconductor on the base substrate; and a second transparent sealing medium which seals the light emitting semiconductor over the first transparent sealing medium and contains phosphor. A thickness of the second sealing medium in a portion with high emission intensity is larger than that of the other portion of the first sealing medium; and the portion with high emission intensity is defined as a portion where light emission intensity from the light emitting semiconductor element is maximum.
    • 发光半导体器件包括:基底; 包括晶体生长基础的发光半导体元件,并且设置在所述基底基板上,使得所述晶体生长基底面向与所述基底基板相反的方向; 密封基底基板上的发光半导体的第一透明密封介质; 以及第二透明密封介质,其密封所述第一透明密封介质上的所述发光半导体并且包含磷光体。 发光强度高的部分的第二密封介质的厚度大于第一密封介质的其他部分的厚度; 并且具有高发光强度的部分被定义为来自发光半导体元件的发光强度最大的部分。