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1. 发明授权

US10006117B2 Sputtering target-backing plate assembly and method for producing same 有权
公开(公告)号：US10006117B2
公开(公告)日：2018-06-26
申请号：US13881510
申请日：2011-10-25
申请人： Shiro Tsukamoto , Kazumasa Ohashi
发明人： Shiro Tsukamoto , Kazumasa Ohashi
IPC分类号： C23C14/34 , H01J37/34 , B23K1/20
CPC分类号： C23C14/34 , B23K1/20 , C23C14/3407 , H01J37/3426 , H01J37/3435
摘要： Provided is a sputtering target-backing plate assembly wherein a Cu—Cr alloy backing plate is bonded to a Ti target via a layer of a strain absorbing material placed at an interface between the Ti target and the Cu—Cr alloy backing plate. In particular, the present invention relates to a sputtering target-backing plate assembly and a production method thereof, the assembly being capable of absorbing strain at the interface between the target and the backing plate in order to prevent deformation (displacement) during sputtering. An object of the present invention is to solve a problem inherent to Titanium (Ti) and a problem in selecting a backing plate compatible with it.

2. 发明申请

US20130220805A1 Sputtering Target-Backing Plate Assembly and Method for Producing Same 有权
标题翻译：溅射目标背板组件及其制造方法
公开(公告)号：US20130220805A1
公开(公告)日：2013-08-29
申请号：US13881510
申请日：2011-10-25
申请人： Shiro Tsukamoto , Kazumasa Ohashi
发明人： Shiro Tsukamoto , Kazumasa Ohashi
IPC分类号： C23C14/34 , B23K1/20
CPC分类号： C23C14/34 , B23K1/20 , C23C14/3407 , H01J37/3426 , H01J37/3435
摘要： Provided is a sputtering target-backing plate assembly wherein a Cu—Cr alloy backing plate is bonded to a Ti target via a layer of a strain absorbing material placed at an interface between the Ti target and the Cu—Cr alloy backing plate. In particular, the present invention relates to a sputtering target-backing plate assembly and a production method thereof, the assembly being capable of absorbing strain at the interface between the target and the backing plate in order to prevent deformation (displacement) during sputtering. An object of the present invention is to solve a problem inherent to Titanium (Ti) and a problem in selecting a backing plate compatible with it.
摘要翻译：提供了一种溅射靶 - 背板组件，其中通过位于Ti靶和Cu-Cr合金背板之间的界面处的应变吸收材料层将Cu-Cr合金背板结合到Ti靶上。特别地，本发明涉及一种溅射靶 - 背板组件及其制造方法，该组件能够在靶材和背板之间的界面处吸收应变，以防止溅射期间的变形（位移）。本发明的目的是解决钛（Ti）固有的问题以及选择与其兼容的背板的问题。

3. 发明授权

US06226953B1 Weather strip retainer with drip molding and method for producing the same 失效
标题翻译：带滴灌的天气条保持器及其制造方法
公开(公告)号：US06226953B1
公开(公告)日：2001-05-08
申请号：US09058807
申请日：1998-04-09
申请人： Akihiro Uno , Katsuhisa Ishihara , Kazumasa Ohashi
发明人： Akihiro Uno , Katsuhisa Ishihara , Kazumasa Ohashi
IPC分类号： E04C238
CPC分类号： B60J10/00 , B60J10/74 , B60J10/80 , B60R13/07
摘要： A weather strip retainer includes a first pillar mount section, a roof mount section, a center pillar mount section, and a drip molding integrally formed on the front pillar mount section and the roof mount section. The roof mount section and the center pillar mount section extends continuously. The center pillar mount section is oriented in a generally vertical direction by bending a boundary zone portion between the roof mount section and the center pillar mount section.
摘要翻译：防风条保持器包括第一柱安装部分，顶部安装部分，中心柱安装部分和一体地形成在前柱安装部分和顶部安装部分上的滴水模制件。屋顶安装部分和中心柱安装部分连续延伸。中心支柱安装部分通过弯曲屋顶安装部分和中心柱安装部分之间的边界区域部分而在大致垂直的方向上定向。

4. 发明授权

US09249497B2 Ni alloy sputtering target, Ni alloy thin film and Ni silicide film 有权
标题翻译： Ni合金溅射靶，Ni合金薄膜和Ni硅化物膜
公开(公告)号：US09249497B2
公开(公告)日：2016-02-02
申请号：US13635775
申请日：2011-03-18
申请人： Yasuhiro Yamakoshi , Kazumasa Ohashi
发明人： Yasuhiro Yamakoshi , Kazumasa Ohashi
IPC分类号： C23C14/16 , C22C19/05 , C22C19/03 , C23C14/34 , C22C5/04
CPC分类号： C23C14/3414 , C22C5/04 , C22C19/03
摘要： Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at %, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at %, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni—Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.
摘要翻译：本发明提供含有5〜30原子％的Pt，V，Al，Cr，Ti，Mo，Si中的1种以上的成分的合金量为1〜5原子％的Ni合金溅射靶，其中，余量为Ni和不可避免的杂质。本发明能够增加低通过通量（PTF），这是具有高磁导率的Ni-Pt合金的缺点，由于磁性而使目标的侵蚀面积趋于变小在溅射期间，场线局部集中在靶的表面上，并且抑制了侵蚀选择性提前的部分与侵蚀进行的部分之间的差异不会随侵蚀进行而增加。

5. 发明申请

US20130032477A1 Ni ALLOY SPUTTERING TARGET, Ni ALLOY THIN FILM AND Ni SILICIDE FILM 有权
标题翻译：镍合金溅射靶，镍合金薄膜和镍硅膜
公开(公告)号：US20130032477A1
公开(公告)日：2013-02-07
申请号：US13635775
申请日：2011-03-18
申请人： Yasuhiro Yamakoshi , Kazumasa Ohashi
发明人： Yasuhiro Yamakoshi , Kazumasa Ohashi
IPC分类号： C23C14/16
CPC分类号： C23C14/3414 , C22C5/04 , C22C19/03
摘要： Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at %, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at %, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni—Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.
摘要翻译：本发明提供含有5〜30原子％的Pt，V，Al，Cr，Ti，Mo，Si中的1种以上的成分的合金量为1〜5原子％的Ni合金溅射靶，其中，余量为Ni和不可避免的杂质。本发明能够增加低通过通量（PTF），这是具有高导磁率的Ni-Pt合金的缺点，由于磁性而使目标的侵蚀面积趋于变小在溅射期间，场线局部集中在靶的表面上，并且抑制了侵蚀选择性提前的部分与侵蚀进行的部分之间的差异不会随侵蚀进行而增加。

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