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    • 1. 发明授权
    • Non-single crystalline semiconductor photo detector with super lattice
    • 具有超晶格的非单晶半导体光电探测器
    • US5783838A
    • 1998-07-21
    • US739194
    • 1996-10-30
    • Shinya KyozukaTakeshi NakamuraTakayuki YamadaYasuaki Miyamoto
    • Shinya KyozukaTakeshi NakamuraTakayuki YamadaYasuaki Miyamoto
    • H01L27/146H01L29/22H01L31/0352H01L31/107H01L27/14H01L29/04H01L29/15
    • B82Y20/00H01L29/2203H01L31/035245
    • Described is a semiconductor photo detector comprising, between two electrodes, at least one of said electrodes being a transparent electrode, an optical absorption layer which is composed of a non-single crystalline material, absorbs light and generates photo carriers and a carrier multiplication layer which is composed of a non-single crystalline material and multiplies the photo carriers generated by the optical absorption layer. The carrier multiplication layer is formed of a multilayer film obtained by stacking films each having plural layers which are composed of non-single crystalline Zn.sub.x Cd.sub.1-x M (0.ltoreq.x.ltoreq.1, M represents one selected from the group consisting of S, Se and Te) and are different in a composition ratio in accordance with a change in the value of x in said Zn.sub.x Cd.sub.1-x M, whereby a band discontinuity .DELTA.Ec of the conduction band can be made larger, an ionization rate of electrons can be heightened and the place where ionization occurs can be specified. As a result, sensitivity increase, noise reduction and low voltage drive can be attained.
    • 描述了一种半导体光电检测器,其包括在两个电极之间,所述电极中的至少一个为透明电极,由非单晶材料构成的光吸收层吸收光并产生光载流子,载流子倍增层 由非单晶材料构成,并将由光吸收层产生的光载体相乘。 载体倍增层由多层膜形成,该多层膜是通过层叠由多层构成的非单晶Zn xCd 1-x M(0≤x≤1,M表示选自S ,Se和Te),并且根据所述ZnxCd1-xM中的x的值的变化,组成比不同,由此可以使导带的带不连续性DELTA Ec更大,电子的离子化速率可以 可以指定电离发生的地方。 结果,可以实现灵敏度增加,降噪和低电压驱动。
    • 4. 发明授权
    • Activated carbon and use therefor
    • 活性炭用于此
    • US09359390B2
    • 2016-06-07
    • US13637250
    • 2011-03-24
    • Mitsunori HitomiTakayuki YoshikawaTakayuki Yamada
    • Mitsunori HitomiTakayuki YoshikawaTakayuki Yamada
    • C07F9/38B01J21/18C01B31/08B01J35/00
    • C07F9/3813B01J21/18B01J35/002C01B32/30C07F9/3808
    • An activated carbon having a high catalytic activity as an oxidation catalyst or a decomposition catalyst, and use therefor are provided.The activated carbon has (a) an oxygen content in a range from 1.40 to 4.30% by mass, (b) a nitrogen content in a range from 0.90 to 2.30% by mass, (c) a sulfur content in a range from 0.50 to 1.20% by mass, and (d) a hydrogen content in a range from 0.40 to 0.65% by mass. The activated carbon may have at least one characteristic of (e) an amount of an acidic surface functional group of 0.10 to 0.36 meq/g, (f) an amount of a basic surface functional group of 0.50 to 1.30 meq/g, and (g) a benzene adsorption capacity of 25 to 50%. The activated carbon catalyzes an oxidation reaction of N-(phosphonomethyl)iminodiacetic acid with a peroxide (e.g., hydrogen peroxide) and achieves an efficient production of N-(phosphonomethyl)glycine even after repetitive use. The activated carbon also efficiently decomposes a chloramine.
    • 提供了作为氧化催化剂或分解催化剂具有高催化活性的活性炭及其用途。 活性炭具有(a)1.40〜4.30质量%的氧含量,(b)氮含量在0.90〜2.30质量%的范围内,(c)硫含量在0.50〜 1.20质量%,(d)氢含量在0.40〜0.65质量%的范围内。 活性炭可以具有以下特征:(e)酸性表面官能团的量为0.10〜0.36meq / g,(f)碱性表面官能团的量为0.50〜1.30meq / g,( g)苯吸附量为25〜50%。 活性炭催化N-(膦酰基甲基)亚氨基二乙酸与过氧化物(例如过氧化氢)的氧化反应,甚至在重复使用后即可有效生产N-(膦酰基甲基)甘氨酸。 活性炭也有效地分解氯胺。
    • 9. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US08476680B2
    • 2013-07-02
    • US13029556
    • 2011-02-17
    • Takayuki Yamada
    • Takayuki Yamada
    • H01L29/76
    • H01L21/76897H01L29/665H01L29/6653H01L29/6656
    • A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween; a side wall spacer formed on a side wall of the gate electrode; source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate. A gate-length-direction thickness of an upper portion of the side wall spacer is at least larger than a gate-length-direction thickness of a middle portion thereof.
    • 半导体器件包括:半导体衬底; 形成在半导体衬底上的栅电极,其间插入有栅极绝缘膜; 形成在所述栅电极的侧壁上的侧壁间隔物; 源极/漏极区域形成在半导体衬底的相对部分中,栅电极和侧壁间隔物插入其间; 以及覆盖所述栅电极,所述侧壁间隔物和所述半导体衬底的上表面的应力施加绝缘膜。 侧壁间隔件的上部的栅长方向厚度至少大于其中间部分的栅极长度方向厚度。
    • 10. 发明授权
    • Liquid transporting apparatus, classifying apparatus, and classifying method
    • 液体输送装置,分类装置和分类方法
    • US08360243B2
    • 2013-01-29
    • US12730830
    • 2010-03-24
    • Takayuki YamadaHiroshi KojimaKazuaki TabataMasaki HirotaKazuya Hongo
    • Takayuki YamadaHiroshi KojimaKazuaki TabataMasaki HirotaKazuya Hongo
    • B07B9/00
    • B03B5/64B03B5/00
    • A liquid transporting apparatus includes: a microchannel; a transporting liquid supply port through which transporting liquid is supplied to the microchannel; a partition wall as defined herein, and that has an opening; a first split channel that is provided on an upper side of the partition wall; a second split channel that is provided on a lower side of the partition wall; a particle dispersion supply port through which a particle dispersion is supplied to a middle portion of a width direction of the first split channel; and at least one drain port through which the fluid is discharged from downstreams of the first and second split channels, and a pattern that generates an upward-directed flow with respect to a vertical direction in a middle portion of a section of the microchannel is formed in an inner wall of the microchannel or in the partition wall.
    • 液体输送装置包括:微通道; 输送液体供给到微通道的输送液供给口; 如本文所定义的分隔壁,并且具有开口; 第一分割通道,设置在分隔壁的上侧; 第二分割通道,设置在分隔壁的下侧; 粒子色散供给口,通过该粒子色散供给口向第一分割通道的宽度方向的中间部分供给粒子分散液; 以及至少一个排出口,流体从第一和第二分流通道的下游排出,并且形成在微通道的截面的中间部分中相对于垂直方向产生向上流动的图案 在微通道的内壁或分隔壁中。