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1. 发明申请

US20080239932A1 INFORMATION RECORDING AND REPRODUCING APPARATUS 审中-公开
标题翻译：信息记录和再现设备
公开(公告)号：US20080239932A1
公开(公告)日：2008-10-02
申请号：US12057938
申请日：2008-03-28
申请人： Chikayoshi KAMATA , Kohichi KUBO , Takayuki TSUKAMOTO , Shinya AOKI , Takahiro HIRAI , Toshiro HIRAOKA
发明人： Chikayoshi KAMATA , Kohichi KUBO , Takayuki TSUKAMOTO , Shinya AOKI , Takahiro HIRAI , Toshiro HIRAOKA
IPC分类号： G11B9/00
CPC分类号： G11B9/04 , G11C5/02 , G11C13/0004 , G11C2213/72
摘要： A nonvolatile information recording and reproducing device exhibits low power consumption and high thermal stability. The information recording and reproducing apparatus according to an aspect of the present invention includes a recording layer and a unit for recording information by applying a voltage to the recording layer to generate a resistance change to be caused due to a phase change in the recording layer. The recording layer includes a material having a ramsdelite structure.
摘要翻译：非易失性信息记录和再现装置具有低功耗和高热稳定性。根据本发明的一个方面的信息记录和再现装置包括记录层和用于通过向记录层施加电压来记录信息的单元，以产生由于记录层的相位变化而引起的电阻变化。记录层包括具有斜纹结构的材料。

2. 发明申请

US20100142262A1 INFORMATION RECORDING AND REPRODUCING APPARATUS 有权
标题翻译：信息记录和再现设备
公开(公告)号：US20100142262A1
公开(公告)日：2010-06-10
申请号：US12636646
申请日：2009-12-11
申请人： Takayuki TSUKAMOTO , Kohichi KUBO , Chikayoshi KAMATA , Takahiro HIRAI , Shinya AOKI , Toshiro HIRAOKA
发明人： Takayuki TSUKAMOTO , Kohichi KUBO , Chikayoshi KAMATA , Takahiro HIRAI , Shinya AOKI , Toshiro HIRAOKA
IPC分类号： G11C11/00
CPC分类号： H01L45/147 , B82Y10/00 , G11B9/04 , G11B9/149 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C16/3427 , G11C2213/53 , G11C2213/75 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/1625
摘要： An information recording and reproducing apparatus, includes: a recording layer including a first layer including a first compound, the first compound being a conjugated compound including at least two types of cation elements, at least one selected from the cation elements being a transition element having a d orbit incompletely filled by electrons, a shortest distance between adjacent cation elements being not more than 0.32 nm; a voltage application unit that applies a voltage to the recording layer, produces a phase change in the recording layer, and records information; an electrode layer that applies a voltage to the recording layer; and an orientation control layer provided between the recording layer and the electrode layer to control an orientation of the recording layer.
摘要翻译：一种信息记录和再现装置，包括：记录层，包括第一层，第一层包括第一化合物，第一化合物是包含至少两种阳离子元素的共轭化合物，选自阳离子元素中的至少一种是具有 ad轨道不完全填充电子，相邻阳离子元素之间的最短距离不大于0.32nm; 向记录层施加电压的电压施加单元，在记录层中产生相变，记录信息; 向记录层施加电压的电极层; 以及设置在记录层和电极层之间的取向控制层，以控制记录层的取向。

3. 发明申请

US20110006277A1 INFORMATION RECORDING AND REPRODUCING DEVICE 有权
标题翻译：信息记录和复制设备
公开(公告)号：US20110006277A1
公开(公告)日：2011-01-13
申请号：US12885719
申请日：2010-09-20
申请人： Kohichi KUBO , Chikayoshi KAMATA , Takayuki TSUKAMOTO , Shinya AOKI , Takahiro HIRAI , Tsukasa NAKAI , Toshiro HIRAOKA
发明人： Kohichi KUBO , Chikayoshi KAMATA , Takayuki TSUKAMOTO , Shinya AOKI , Takahiro HIRAI , Tsukasa NAKAI , Toshiro HIRAOKA
IPC分类号： H01L45/00
CPC分类号： H01L27/101 , B82Y10/00 , G11B9/04 , G11B9/149 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/51 , G11C2213/53 , G11C2213/55 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/147
摘要： According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance by a current supplied via the first layer and the second layer. The recording layer includes a first compound layer and an insulating layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The insulating layer contains a third compound, and the third compound includes an element selected from group 1 to 4 elements and group 12 to 17 elements in the periodic table.
摘要翻译：根据一个实施例，信息记录和再现装置包括第一层，第二层和记录层。记录层设置在第一层和第二层之间，并且能够通过经由第一层提供的电流在具有第一电阻的第一状态和具有比第一电阻高的第二电阻的第二状态之间可逆地改变，第二层。记录层包括第一化合物层和绝缘层。第一化合物层含有第一化合物。第一化合物包括第一阳离子元件和不同于第一阳离子元件的第二阳离子元件。绝缘层包含第三化合物，第三化合物包括选自元素周期表中第1至4族元素和第12至17族元素的元素。

4. 发明申请

US20090034123A1 INFORMATION RECORDING AND REPRODUCING APPARATUS 有权
标题翻译：信息记录和再现设备
公开(公告)号：US20090034123A1
公开(公告)日：2009-02-05
申请号：US12057982
申请日：2008-03-28
申请人： Shinya AOKI , Kohichi Kubo , Takayuki Tsukamoto , Chikayoshi Kamata , Takahiro Hirai , Toshiro Hiraoka
发明人： Shinya AOKI , Kohichi Kubo , Takayuki Tsukamoto , Chikayoshi Kamata , Takahiro Hirai , Toshiro Hiraoka
IPC分类号： G11B5/82
CPC分类号： H01L27/101 , B82Y10/00 , G11B9/149 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： There is proposed a nonvolatile information recording and reproducing device with low power consumption and high thermal stability. The information recording and reproducing apparatus according to an aspect of the present invention includes a recording layer and a unit for recording information by applying a voltage to the recording layer to generate a state change in the recording layer. The recording layer being configured to include at least a first compound having a hollandite structure.
摘要翻译：提出了具有低功耗和高热稳定性的非易失性信息记录和再现装置。根据本发明的一个方面的信息记录和再现装置包括记录层和用于通过向记录层施加电压来记录信息以产生记录层中的状态变化的单元。记录层被配置为至少包括具有荷兰岩结构的第一化合物。

5. 发明申请

US20120061732A1 INFORMATION RECORDING/REPRODUCING DEVICE 失效
标题翻译：信息记录/再现设备
公开(公告)号：US20120061732A1
公开(公告)日：2012-03-15
申请号：US13228938
申请日：2011-09-09
申请人： Takahiro HIRAI , Tsukasa NAKAI , Kohichi KUBO , Chikayoshi KAMATA , Takayuki TSUKAMOTO , Shinya AOKI
发明人： Takahiro HIRAI , Tsukasa NAKAI , Kohichi KUBO , Chikayoshi KAMATA , Takayuki TSUKAMOTO , Shinya AOKI
IPC分类号： H01L27/10 , H01L21/82
CPC分类号： H01L27/0688 , G11C13/0007 , G11C2213/71 , G11C2213/77 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： According to one embodiment, an information recording/reproducing device including a semiconductor substrate, a first interconnect layer on the semiconductor substrate, a first memory cell array layer on the first interconnect layer, and a second interconnect layer on the first memory cell array layer. The first memory cell array layer comprises an insulating layer having an alignment mark, and a stacked layer structure on the insulating layer and including a storage layer and an electrode layer. All of the layers in the stacked layer structure comprises a material with a permeability of visible light of 1% or more.
摘要翻译：根据一个实施例，一种信息记录/再现装置，包括半导体衬底，半导体衬底上的第一互连层，第一互连层上的第一存储单元阵列层和第一存储单元阵列层上的第二互连层。第一存储单元阵列层包括具有对准标记的绝缘层和绝缘层上的堆叠层结构，并且包括存储层和电极层。堆叠层结构中的所有层包括具有1％或更高的可见光透过率的材料。

6. 发明申请

US20070057597A1 SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：表面声波装置及其制造方法
公开(公告)号：US20070057597A1
公开(公告)日：2007-03-15
申请号：US11470933
申请日：2006-09-07
申请人： Shinya AOKI
发明人： Shinya AOKI
IPC分类号： H03H9/25
CPC分类号： H03H9/1092 , H03H3/08
摘要： A surface acoustic wave device includes: an IDT electrode formed at a main surface of a piezoelectric substrate, an extraction electrode extracted from the IDT electrode; a surface acoustic wave chip having a metal junction formed along a periphery of the main surface of the piezoelectric substrate; a contact electrode made of an insulating material, connecting to the extraction electrode formed at one main surface thereof; an external electrode formed at the other main surface of the contact electrode; and a cover substrate having a through-hole electrode for connecting the contact electrode to the external electrode. The IDT electrode and the extraction electrode are hermetically sealed in an interior of the space formed by bonding the surface acoustic wave chip to the cover substrate through the metal junction. The interior of the space contains an auxiliary section having enough height to prevent the cover substrate from coming in contact with the IDT electrode even in the case of distortion in the piezoelectric substrate or the cover substrate, the auxiliary section formed at the main surface of the piezoelectric substrate.
摘要翻译：表面声波装置包括：形成在压电基板的主表面上的IDT电极，从IDT电极提取的引出电极; 表面声波芯片，其具有沿着压电基板的主表面的周边形成的金属结; 由绝缘材料制成的接触电极，连接到在其一个主表面上形成的引出电极; 形成在所述接触电极的另一个主表面上的外部电极; 以及具有用于将接触电极连接到外部电极的通孔电极的盖基板。 IDT电极和引出电极通过金属接合部将表面声波芯片与覆盖基板接合而形成的空间的内部气密地密封。空间的内部包含具有足够高度的辅助部分，以防止盖基板与IDT电极接触，即使在压电基板或盖基板的变形的情况下，辅助部分形成在压电基片。

7. 发明申请

US20070006434A1 METHOD FOR MANUFACTURING A PIEZOELECTRIC VIBRATION DEVICE 有权
标题翻译：制造压电振动装置的方法
公开(公告)号：US20070006434A1
公开(公告)日：2007-01-11
申请号：US11428097
申请日：2006-06-30
申请人： Shinya AOKI
发明人： Shinya AOKI
IPC分类号： H04R17/00 , H05K3/20
CPC分类号： H03H9/1092 , H03H9/02992 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/49156 , Y10T29/49798
摘要： Manufacturing a piezoelectric vibration device, includes: forming a bonding electrode on a part of a piezoelectric substrate to which a cover makes contact; forming a part defining a through hole to the cover so that a profile of an edge of an opening of the through hole at a first surface of the cover is positioned inside an outer shape of the taking out electrode in a plan view when the cover and the piezoelectric substrate are overlapped; forming a first glass film on the first surface of the cover; forming a second glass film on the first surface of the cover; bonding the first glass film to the taking out electrode as well as the second glass film to the bonding electrode by generating an electric field; and cutting an electrical coupling between the taking out electrode and the bonding electrode after step (e).
摘要翻译：制造压电振动装置包括：在与盖接触的压电基板的一部分上形成接合电极; 形成向所述盖形成通孔的部分，使得所述盖的第一表面处的所述通孔的开口的边缘的轮廓在所述盖和所述盖的平面图中位于所述取出电极的外部形状的内部压电基板重叠; 在所述盖的第一表面上形成第一玻璃膜; 在所述盖的第一表面上形成第二玻璃膜; 通过产生电场将第一玻璃膜与取出电极以及第二玻璃膜接合到接合电极; 以及在步骤（e）之后切割取出电极和接合电极之间的电耦合。

8. 发明申请

US20070058003A1 THROUGH-HOLE FORMING METHOD, AND PIEZOELECTRIC DEVICE MANUFACTURING METHOD AND PIEZOELECTRIC DEVICE MANUFACTURED THEREBY 失效
标题翻译：通孔形成方法和压电器件制造方法及其制造的压电器件
公开(公告)号：US20070058003A1
公开(公告)日：2007-03-15
申请号：US11470543
申请日：2006-09-06
申请人： Shinya AOKI
发明人： Shinya AOKI
IPC分类号： B41J2/045
CPC分类号： H03H9/1071 , H03H9/0547 , H03H9/1092 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49165
摘要： In a method of forming a part of a through-hole for a piezoelectric substrate having an excitation electrode and a leading electrode which are formed on a first surface of the piezoelectric substrate and are made of a thin metal film in order to establish a conductivity, the method includes: blasting a position on a second surface of the piezoelectric substrate corresponding to the leading electrode to form a preliminary hole by boring the piezoelectric substrate in its halfway; etching a bottom of the preliminary hole to form a part of a through-hole through which a part of the leading electrode is exposed; and placing a conductive material in the part of a through-hole, the conductive material contacting the leading electrode from a side of the second surface of the piezoelectric substrate.
摘要翻译：在形成具有激励电极和引出电极的压电基片的通孔的一部分的方法中，所述激励电极和引出电极形成在压电基片的第一表面上，并由金属薄膜制成以形成导电性，该方法包括：在压电基板的与引出电极相对应的第二表面上的位置上，通过在其一半中镗压压基板来形成预备孔; 蚀刻预备孔的底部以形成引导电极的一部分暴露在其中的通孔的一部分; 并且将导电材料放置在通孔的一部分中，所述导电材料从所述压电基板的第二表面的一侧接触所述引导电极。

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