会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Semiconductor device with interconnection connecting to a via
    • 具有连接到通孔的互连的半导体器件
    • US08836135B2
    • 2014-09-16
    • US13370723
    • 2012-02-10
    • Hirokazu Kikuchi
    • Hirokazu Kikuchi
    • H01L23/538H01L21/768H01L23/528H01L23/522
    • H01L21/76816H01L21/76805H01L23/5226H01L2924/0002H01L2924/00
    • A semiconductor device including: a semiconductor substrate; a plurality of interconnect layers disposed at different heights from the semiconductor substrate, each interconnect layer including an interconnection formed therein; and a via formed in a columnar shape extending in the stack direction of the interconnect layers, the via electrically connecting the interconnections of the different interconnect layers, the interconnections including an intermediate interconnection in contact with the via in the intermediate portion thereof, and the intermediate interconnection including a first type intermediate interconnection passing through the via in a direction perpendicular to the stack direction and in contact with the via on the top surface, bottom surface, and both side surfaces thereof.
    • 一种半导体器件,包括:半导体衬底; 多个互连层,其设置在与半导体衬底不同的高度处,每个互连层包括形成在其中的互连; 以及形成为沿互连层的堆叠方向延伸的柱状的通孔,所述通孔电连接不同互连层的互连,所述互连包括与其中间部分中的通孔接触的中间互连,以及所述中间体 互连包括在垂直于堆叠方向的方向上穿过通孔的第一类型的中间互连件,并且与其顶表面,底表面及其两个侧表面上的通孔相接触。
    • 7. 发明授权
    • Method of manufacturing nonvolatile storage device
    • 制造非易失性存储装置的方法
    • US07879670B2
    • 2011-02-01
    • US12554319
    • 2009-09-04
    • Hiroyuki NanseiToshiharu TanakaHirokazu Kikuchi
    • Hiroyuki NanseiToshiharu TanakaHirokazu Kikuchi
    • H01L21/8244
    • H01L21/32139H01L27/0207H01L27/24
    • A method of manufacturing a nonvolatile storage device having memory cell arrays according to an embodiment of the present invention includes forming, in a memory cell array forming region above a processed film, first columnar members arrayed at substantially equal intervals in the first direction and the second direction, forming, concerning at least arrays as a part of arrays of the first columnar members in the first direction, second columnar members long in section having major axes longer than sections of the first columnar members outside of the memory cell array forming region such that the major axes are set in the first direction and the second columnar members continue to ends of the arrays, and forming, in the same manner as above, third columnar members, which continue to arrays of the first columnar members in the second direction.
    • 根据本发明实施例的制造具有存储单元阵列的非易失性存储装置的方法包括在处理膜上方的存储单元阵列形成区域中形成在第一方向上以基本等间隔排列的第一柱状构件, 方向,形成,至少阵列作为第一方向上的第一柱状构件的阵列的一部分,第二柱状构件的长截面具有长于存储单元阵列形成区域外的第一柱状构件的部分的长轴,使得 长轴被设置在第一方向上,第二柱状构件继续到阵列的端部,并且以与上述相同的方式形成在第二方向上继续排列第一柱状构件的第三柱状构件。
    • 8. 发明申请
    • METHOD OF MANUFACTURING NONVOLATILE STORAGE DEVICE
    • 制造非易失存储器件的方法
    • US20100261330A1
    • 2010-10-14
    • US12554319
    • 2009-09-04
    • Hiroyuki NanseiToshiharu TanakaHirokazu Kikuchi
    • Hiroyuki NanseiToshiharu TanakaHirokazu Kikuchi
    • H01L21/3205
    • H01L21/32139H01L27/0207H01L27/24
    • A method of manufacturing a nonvolatile storage device having memory cell arrays according to an embodiment of the present invention includes forming, in a memory cell array forming region above a processed film, first columnar members arrayed at substantially equal intervals in the first direction and the second direction, forming, concerning at least arrays as a part of arrays of the first columnar members in the first direction, second columnar members long in section having major axes longer than sections of the first columnar members outside of the memory cell array forming region such that the major axes are set in the first direction and the second columnar members continue to ends of the arrays, and forming, in the same manner as above, third columnar members, which continue to arrays of the first columnar members in the second direction.
    • 根据本发明实施例的制造具有存储单元阵列的非易失性存储装置的方法包括在处理膜上方的存储单元阵列形成区域中形成在第一方向上以基本等间隔排列的第一柱状构件, 方向,形成,至少阵列作为第一方向上的第一柱状构件的阵列的一部分,第二柱状构件的长截面具有长于存储单元阵列形成区域外的第一柱状构件的部分的长轴,使得 长轴被设置在第一方向上,第二柱状构件继续到阵列的端部,并且以与上述相同的方式形成在第二方向上继续排列第一柱状构件的第三柱状构件。